Analog Devices AD8012ARM-REEL7, AD8012ARM-REEL, AD8012ARM, AD8012AR-REEL7, AD8012AR-REEL Datasheet

Dual 350 MHz

AMP 1

V

IN

V

REF

R2

R1

RL = 100V
OR

135V

V

OUT

Np:Ns

TRANSFORMER

LINE
POWER
IN dB

+V

S

+

–

–V

S

+

–

a

FEATURES
Low Power

1.7 mA/Amplifier Supply Current

Fully Specified for ⴞ5 V and +5 V Supplies
High Output Current, 125 mA
High Speed

350 MHz, –3 dB Bandwidth (G = +1)

150 MHz, –3 dB Bandwidth (G = +2)

2,250 V/␮s Slew Rate

20 ns Settling Time to 0.1%
Low Distortion

–72 dBc Worst Harmonic @ 500 kHz, R

–66 dBc Worst Harmonic @ 5 MHz, R
Good Video Specifications (R

= 1 k⍀, G = +2)

L

0.02% Differential Gain Error

0.06ⴗ Differential Phase Error

Gain Flatness 0.1 dB to 40 MHz

60 ns Overdrive Recovery
Low Offset Voltage, 1.5 mV
Low Voltage Noise, 2.5 nV/√Hz
Available in 8-Lead SOIC and 8-Lead microSOIC

APPLICATIONS
XDSL, HDSL Line Driver
ADC Buffer
Professional Cameras
CCD Imaging System
Ultrasound Equipment
Digital Camera

PRODUCT DESCRIPTION

The AD8012 is a dual low power current feedback amplifier
capable of providing 350 MHz bandwidth while using only

1.7 mA per amplifier. It is intended for use in high frequency,
wide dynamic range systems where low distortion, high speed
are essential and low power is critical.

With only 1.7 mA of supply current, the AD8012 also offers
exceptional ac specs such as 20 ns settling time and 2,250 V/µs
slew rate. The video specifications are 0.02% differential gain
and 0.06 degree differential phase, excellent for such a low power
amplifier. In addition, the AD8012 has a low offset of 1.5 mV.

The AD8012 is well suited for any application that requires high
performance with minimal power.

The product is available in standard 8-lead SOIC or micro­SOIC packages and operates over the industrial temperature
range –40°C to +85°C.

= 100 ⍀

L

= 1 k⍀

L

Low Power Amplifier

AD8012

FUNCTIONAL BLOCK DIAGRAM

+V

2nd

3rd

8

S

OUT2

7

6

–IN2
+IN2–V

5

G = +2

= 2V p-p

V

OUT

R

= 750V

F

OUT1

1

2

–IN1

3

+IN1

4

S

AD8012

–40

–50

–60

–70

DISTORTION – dBc

–80

–90

10 1k100

RL – V

Figure 1. Distortion vs. Load Resistance, VS = ±5 V,
Frequency = 500 kHz

Figure 2. Differential Drive Circuit for XDSL Applications

*

*Protected under U.S. Patent Number 5,537,079.

REV. A

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

AD8012–SPECIFICATIONS

DUAL SUPPLY

(@ TA = +25ⴗC, VS = ⴞ5 V, G = +2, RL = 100 ⍀, RF = RG = 750 ⍀, unless otherwise noted)

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth G = +1, V

G␣ =␣ +2, V
G␣ =␣ +2, V

0.1 dB Bandwidth V
Large Signal Bandwidth V
Slew Rate V
Rise and Fall Time V

< 0.4 V p-p, R

OUT

= 4 V p-p 75 MHz

OUT

= 4 V p-p 2,250 V/µs

OUT

= 2 V p-p 3 ns

OUT

Settling Time 0.1%, V

0.02%, V

< 0.4 V p-p, R

OUT

< 0.4 V p-p, R

OUT

< 0.4 V p-p, R

OUT

= 2 V p-p 20 ns

OUT

= 2 V p-p 35 ns

OUT

= 1 kΩ/100 Ω 40/23 MHz

L

= 1 kΩ 270 350 MHz

L

= 1 kΩ 95 150 MHz

L

= 100 Ω 90 MHz

L

Overdrive Recovery 2× Overdrive 60 ns

NOISE/HARMONIC PERFORMANCE

Distortion V

2nd Harmonic 500 kHz, R

3rd Harmonic 500 kHz, R

Output IP3 500 kHz, ∆f = 10 kHz, R
IMD 500 kHz, ∆f = 10 kHz, R
Crosstalk 5 MHz, R

= 2 V p-p, G = +2

OUT

5 MHz, R

5 MHz, R

= 1 kΩ/100 Ω –89/–73 dBc

L

= 1 kΩ/100 Ω –78/–62 dBc

L

= 1 kΩ/100 Ω –84/–72 dBc

L

= 1 kΩ/100 Ω –66/–52 dBc

L

= 100 Ω –70 dB

L

= 1 kΩ/100 Ω 30/40 dBm

L

= 1 kΩ/100 Ω –79/–77 dBc

L

Input Voltage Noise f = 10 kHz 2.5 nV/√Hz
Input Current Noise f = 10 kHz,␣ +Input, –Input 15 pA/√Hz
Differential Gain f = 3.58 MHz, R
Differential Phase f = 3.58 MHz, R

= 150 Ω/1 kΩ, G = +2 0.02/0.02 %

L

= 150 Ω/1 kΩ, G = +2 0.3/0.06 Degrees

L

DC PERFORMANCE

Input Offset Voltage ±1.5 ±4mV

Open-Loop Transimpedance V

T

MIN–TMAX

= ±2 V, RL = 100 Ω 240 500 kΩ

OUT

T

MIN–TMAX

200 kΩ

±5mV

INPUT CHARACTERISTICS

Input Resistance +Input 450 kΩ
Input Capacitance +Input 2.3 pF
Input Bias Current +Input, –Input ±3 ±12 µA

Common-Mode Rejection Ratio V

+Input, –Input, T

= ±2.5 V –56 –60 dB

CM

MIN–TMAX

±15 µA

Input Common-Mode Voltage Range ±3.8 ±4.1 V

OUTPUT CHARACTERISTICS

Output Resistance G = +2 0.1 Ω
Output Voltage Swing ±3.85 ±4V
Output Current T

MIN–TMAX

70 125 mA

Short Circuit Current 500 mA

POWER SUPPLY

Supply Current/Amp 1.7 1.8 mA

T

MIN–TMAX

1.9 mA

Operating Range Dual Supply ±1.5 ±6.0 V
Power Supply Rejection Ratio –58 –60 dB

Specifications subject to change without notice.

–2– REV. A

AD8012

SINGLE SUPPLY

(@ TA +25ⴗC, VS = +5 V, G = +2, RL = 100 ⍀, RF = RG = 750 ⍀, unless otherwise noted)

Parameter Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth G = +1, V

G␣ =␣ +2, V
G␣ =␣ +2, V

0.1 dB Bandwidth V
Large Signal Bandwidth V
Slew Rate V
Rise and Fall Time V

< 0.4 V p-p, R

OUT

= 2 V p-p 60 MHz

OUT

= 3 V p-p 1,200 V/µs

OUT

= 2 V p-p 2 ns

OUT

Settling Time 0.1%, V

0.02%, V

< 0.4 V p-p, R

OUT

< 0.4 V p-p, R

OUT

< 0.4 V p-p, R

OUT

= 2 V p-p 25 ns

OUT

= 2 V p-p 40 ns

OUT

= 1 kΩ/100 Ω 43/24 MHz

L

= 1 kΩ 220 300 MHz

L

= 1 kΩ 90 140 MHz

L

= 100 Ω 85 MHz

L

Overdrive Recovery 2× Overdrive 60 ns

NOISE/HARMONIC PERFORMANCE

Distortion V

2nd Harmonic 500 kHz, R

3rd Harmonic 500 kHz, R

Output IP3 500 kHz, R
IMD 500 kHz, R
Crosstalk 5 MHz, R

= 2 V p-p, G = +2

OUT

5 MHz, R

5 MHz, R

= 1 kΩ/100 Ω –87/–71 dBc

L

= 1 kΩ/100 Ω –77/–61 dBc

L

= 1 kΩ/100 Ω –89/–72 dBc

L

= 1 kΩ/100 Ω –78/–52 dBc

L

= 1 kΩ/100 Ω 30/40 dBm

L

= 1 kΩ/100 Ω –77/–80 dBc

L

= 100 Ω –70 dB

L

Input Voltage Noise f = 10 kHz 2.5 nV/√Hz
Input Current Noise f = 10 kHz,␣ +Input, –Input 15 pA/√Hz

Black Level Clamped to +2 V, f = 3.58 MHz
Differential Gain R
Differential Phase R

= 150 Ω/1 kΩ 0.03/0.03 %

L

= 150 Ω/1 kΩ 0.4/0.08 Degrees

L

DC PERFORMANCE

Input Offset Voltage ±1 ±3mV

±4mV

Open-Loop Transimpedance V

T

MIN–TMAX

= 2 V p-p, R

OUT

T

MIN–TMAX

= 100 Ω 200 400 kΩ

L

150 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 450 kΩ
Input Capacitance +Input 2.3 pF
Input Bias Current +Input, –Input ±3 ±12 µA

Common-Mode Rejection Ratio V

+Input, –Input, T

= 1.5 V to 3.5 V –56 –60 dB

CM

MIN–TMAX

±15 µA

Input Common-Mode Voltage Range 1.5 to 3.5 1.2 to 3.8 V

OUTPUT CHARACTERISTICS

Output Resistance G = +2 0.1 Ω
Output Voltage Swing 1 to 4 0.9 to 4.2 V
Output Current T

MIN–TMAX

50 100 mA

Short Circuit Current 500 mA

POWER SUPPLY

Supply Current/Amp 1.55 1.75 mA

T

MIN–TMAX

1.85 mA
Operating Range Single Supply 3 12 V
Power Supply Rejection Ratio –58 –60 dB

Specifications subject to change without notice.

–3–REV. A

AD8012

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

Supply␣ Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6␣ V

Internal␣ Power␣ Dissipation

2

1

Small␣ Outline␣ Package (R) . . . . . . . . . . . . . . . . . . . . . 0.8␣ W

microSOIC Package (RM) . . . . . . . . . . . . . . . . . . . . . 0.6 W

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . ±V

S

Differential␣ Input␣ Voltage . . . . . . . . . . . . . . . . . . . . . . ±2.5␣ V

Output Short Circuit Duration

␣ ␣ . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range RM, R . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . –40°C to +85°C

Lead Temperature Range (Soldering␣ 10␣ sec) . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air at +25°C

8-Lead SOIC Package: θJA = 155°C/W

8-Lead microSOIC Package: θJA = 200°C/W

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi­mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150°C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175°C for an extended period can result in de­vice failure.

The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.

2.0

TJ = +1508C

1.5

1.0

8-LEAD SOIC

PACKAGE

0

–50

8-LEAD

microSOIC

–40 –30

0 102030405060708090

–20 –10

AMBIENT TEMPERATURE – 8C

0.5

MAXIMUM POWER DISSIPATION – Watts

Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8012 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

ORDERING GUIDE

Temperature Package Package Brand

Model Range Description Options Code

AD8012AR –40°C to +85°C 8-Lead SOIC SO-8
AD8012AR-REEL –40°C to +85°C13” Tape and Reel SO-8
AD8012AR-REEL7 –40°C to +85°C7” Tape and Reel SO-8
AD8012ARM –40°C to +85°C 8-Lead microSOIC RM-08 H6A
AD8012ARM-REEL –40°C to +85°C13” Tape and Reel RM-08 H6A
AD8012ARM-REEL7 –40°C to +85°C7” Tape and Reel RM-08 H6A

␣␣␣␣

–4– REV. A

0.1mF

0.1mF

10mF

10mF

R

L

V

IN

V

OUT

750V 750V

53.6V

+V

S

–V

S

+

+

Typical Performance Characteristics–

AD8012

750V 750V

V

IN

49.9V

0.1mF

0.1mF

+

+

10mF

10mF

Figure 4. Test Circuit; Gain = +2

20mV

5ns

V

OUT

R

L

+V

S

–V

S

Figure 7. Test Circuit; Gain = –1

20mV

5ns

Figure 5.* 100 mV Step Response; G = +2, VS = ±2.5 V or

±

5 V, RL = 1 k

Ω

1V

10ns

Figure 6. 4 V Step Response; G = +2, VS = ±5 V, RL = 1 k

Figure 8.* 100 mV Step Response; G = –1, VS = ±2.5 V or

±

5 V, RL = 1 k

Ω

Figure 9. 4 V Step Response; G = –1, VS = ±5 V, RL = 1 k

Ω

1V 10ns

Ω

*NOTE:␣ VS = ±2.5 V operation is identical to VS = +5 V single supply operation.

–5–REV. A