Analog Devices AD8011 Datasheet

300 MHz, 1 mA
a
FEATURES Easy to Use Low Power
1 mA Power Supply Current (5 mW on +5 V
High Speed and Fast Settling on +5 V
300 MHz, –3 dB Bandwidth (G = +1) 180 MHz, –3 dB Bandwidth (G = +2) 2000 V/s Slew Rate 29 ns Settling Time to 0.1%
Good Video Specifications (R
= 1 k, G = +2)
L
Gain Flatness 0.1 dB to 25 MHz
0.02% Differential Gain Error
0.06 Differential Phase Error
Low Distortion
–70 dBc Worst Harmonic @ 5 MHz –62 dBc Worst Harmonic @ 20 MHz
Single Supply Operation
Fully Specified for +5 V Supply
APPLICATIONS Power Sensitive, High Speed Systems Video Switchers Distribution Amplifiers A-to-D Driver Professional Cameras CCD Imaging Systems Ultrasound Equipment (Multichannel)
PRODUCT DESCRIPTION
The AD8011 is a very low power, high-speed amplifier designed to operate on +5 V or ±5 V supplies. With wide bandwidth, low distortion and low power, this device is ideal as a general-purpose
)
S
Current Feedback Amplifier
AD8011*
FUNCTIONAL BLOCK DIAGRAM
8-Lead Plastic DIP and SOIC
NC
1
2
–IN
3
+IN
4
V–
AD8011
amplifier. It also can be used to replace high-speed amplifiers consuming more power. The AD8011 is a current feedback amplifier and features gain flatness of 0.1 dB to 25 MHz while offering differential gain and phase error of 0.02% and 0.06° on a single +5 V supply. This makes the AD8011 ideal for profes­sional video electronics such as cameras, video switchers or any high speed portable equipment. Additionally, the AD8011’s low distortion and fast settling make it ideal for buffering high speed 8-, 10-, 12-bit A-to-D converters.
The AD8011 offers very low power of 1 mA max and can run on single +5 V to +12 V supplies. All this is offered in a small 8-lead plastic DIP or 8-lead SOIC package. These features fit well with portable and battery-powered applications where size and power are critical.
The AD8011 is available in the industrial temperature range of – 40°C to +85°C.
8
NC
V+
7
OUT
6
NC
5
+5
G = +2
+4
= 1k
R
F
= +5V OR ⴞ5V
V
S
NORMALIZED GAIN – dB
+3
+2
+1
1
2
3
4
5
0
1
V
OUT
= 200mV p-p
10 FREQUENCY – MHz
100 500
Figure 1. Frequency Response; G = +2, VS = +5 V or ±5 V
*Protected under Patent Number 5,537,079.
REV. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
40
60
DISTORTION dBc
80
100
G = +2
2nd R
3rd
= 150
R
L
3rd
=1k
R
L
= 1k
L
FREQUENCY – MHz
2nd
= 150
R
L
10 20
Figure 2. Distortion vs. Frequency; VS = ±5 V
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2000
AD8011–SPECIFICATIONS
DUAL SUPPLY
(@ TA = +25C, VS = 5 V, G = +2, RF = 1 k, RL = 1 k, unless otherwise noted)
Model AD8011A
Conditions Min Typ Max Units
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, VO < 1 V p-p G = +1 340 400 MHz –3 dB Small Signal Bandwidth, V –3 dB Large Signal Bandwidth, V
< 1 V p-p G = +2 180 210 MHz
O
= 5 V p-p G = +10, RF = 500 57 MHz
O
Bandwidth for 0.1 dB Flatness G = +2 20 25 MHz Slew Rate G = +2, V
G = –1, V Settling Time to 0.1% G = +2, V Rise and Fall Time G = +2, V
= 4 V Step 3500 V/µs
O
= 4 V Step 1100 V/µs
O
= 2 V Step 25 ns
O
= 2 V Step 0.4 ns
O
G = –1, VO = 2 V Step 3.7 ns
NOISE/HARMONIC PERFORMANCE
2nd Harmonic fC = 5 MHz, VO = 2 V p-p, G = +2
= 1 k –75 dB
R
L
= 150 –67 dB
R 3rd Harmonic R
L
= 1 k –70 dB
L
= 150 –54 dB
R
L
Input Voltage Noise f = 10 kHz 2 nV/Hz Input Current Noise f = 10 kHz, +In 5 pA/Hz
–In 5 pA/Hz Differential Gain Error NTSC, G = +2, R
R Differential Phase Error NTSC, G = +2, R
= 1 k 0.02 %
L
= 150 0.02 %
L
= 1 k 0.06 Degrees
L
RL = 150 0.3 Degrees
DC PERFORMANCE
Input Offset Voltage 25±mV
T
MIN–TMAX
26±mV Offset Drift 10 µV/°C –Input Bias Current 515±µA
T
MIN–TMAX
20 ±µA
+Input Bias Current 515±µA
T
MIN–TMAX
20 ±µA
Open-Loop Transresistance 800 1300 k
T
MIN–TMAX
550 k
INPUT CHARACTERISTICS
Input Resistance +Input 450 k Input Capacitance +Input 2.3 pF Input Common-Mode Voltage Range 3.8 4.1 ± V Common-Mode Rejection Ratio
Offset Voltage VCM = ±2.5 V –52 –57 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 3.9 4.1 ± V Output Resistance 0.1 0.3 Output Current T
MIN–TMAX
15 30 mA
Short Circuit Current 60 mA
POWER SUPPLY
Operating Range ±1.5 ±6.0 V Quiescent Current T
MIN–TMAX
1.0 1.3 mA
Power Supply Rejection Ratio Vs = ±5 V ± 1 V 55 58 dB
Specifications subject to change without notice.
–2–
REV. B
AD8011
SINGLE SUPPLY
(@ TA = +25C, VS = +5 V, G = +2, RF = 1 k, VCM = 2.5 V, RL = 1 k, unless otherwise noted)
Model AD8011A
Conditions Min Typ Max Units
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V –3 dB Small Signal Bandwidth, V –3 dB Large Signal Bandwidth, V
< 0.5 V p-p G = +1 270 328 MHz
O
< 0.5 V p-p G = +2 150 180 MHz
O
= 2.5 V p-p G = +10, RF = 500 57 MHz
O
Bandwidth for 0.1 dB Flatness G = +2 15 20 MHz Slew Rate G = +2, V
G = –1, V Settling Time to 0.1% G = +2, V Rise and Fall Time G = +2, V
= 2 V Step 2000 V/µs
O
= 2 V Step 500 V/µs
O
= 2 V Step 29 ns
O
= 2 V Step 0.6 ns
O
G = –1, VO = 2 V Step 4 ns
NOISE/HARMONIC PERFORMANCE
2nd Harmonic fC = 5 MHz, VO = 2 V p-p, G = +2
= 1 k –84 dB
R
L
R
= 150 –67 dB
3rd Harmonic R
L
= 1 k –76 dB
L
= 150 –54 dB
R
L
Input Voltage Noise f = 10 kHz 2 nV/Hz Input Current Noise f = 10 kHz, +In 5 pA/Hz
–In 5 pA/Hz Differential Gain Error NTSC, G = +2, R
R Differential Phase Error NTSC, G = +2, R
= 1 k 0.02 %
L
= 150 0.6 %
L
= 1 k 0.06 Degrees
L
RL = 150 0.8 Degrees
DC PERFORMANCE
Input Offset Voltage 25mV
T
MIN–TMAX
26mV
Offset Drift 10 µV/°C –Input Bias Current 515±µA
T
MIN–TMAX
20 ±µA
+Input Bias Current 515±µA
T
MIN–TMAX
20 ±µA
Open-Loop Transresistance 800 1300 k
T
MIN–TMAX
550 k
INPUT CHARACTERISTICS
Input Resistance +Input 450 k Input Capacitance +Input 2.3 pF Input Common-Mode Voltage Range 1.5 to 3.5 1.2 to 3.8 V Common-Mode Rejection Ratio
Offset Voltage VCM = 1.5 V to 3.5 V –52 –57 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.2 to 3.8 0.9 to 4.1 +V Output Resistance 0.1 0.3 Output Current T
MIN–TMAX
15 30 mA
Short Circuit Current 50 mA
POWER SUPPLY
Operating Range +3 +12 V Quiescent Current T
MIN–TMAX
0.8 1.15 mA
Power Supply Rejection Ratio ∆Vs = ±1 V 55 58 dB
Specifications subject to change without notice.
REV. B
–3–
AD8011
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
1
Plastic DIP Package (N) . . . . . . . . Observe Derating Curves
Small Outline Package (R) . . . . . . . Observe Derating Curves
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ± 2.5 V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (N, R) . . . . . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead Plastic DIP Package: θJA = 90°C/W 8-Lead SOIC Package: θJA = 155°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8011 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition tem­perature of the plastic, approximately +150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of +175°C for an extended period can result in device failure.
While the AD8011 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves (shown below in Figure 3).
2.0 TJ = +150ⴗC
8-LEAD PLASTIC DIP PACKAGE
1.5
1.0
8-LEAD SOIC PACKAGE
0.5
MAXIMUM POWER DISSIPATION – Watts
0 –50 –40 –30 –20 –10 0 10203040 5060708090
AMBIENT TEMPERATURE – C
Figure 3. Maximum Power Dissipation vs. Temperature
ORDERING GUIDE
Temperature Package Package
Model Range Description Option
AD8011AN –40°C to +85°C 8-Lead Plastic DIP N-8 AD8011AR –40°C to +85°C 8-Lead SOIC SO-8 AD8011AR-REEL –40°C to +85°C 13" Tape and Reel SO-8 AD8011AR-REEL7 –40°C to +85°C 7" Tape and Reel SO-8 AD8011-EB Evaluation Bo
ard
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8011 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. B
AD8011
1k1k
V
IN
50
0.01␮F
0.01␮F
10F
10F
R
L
1k
V
OUT
+V
S
–V
S
V
IN
Figure 4. Test Circuit; Gain = +2
1k
52.3
1k
0.01␮F
0.01␮F
10F
10F
Figure 7. Test Circuit; Gain = –1
R 1k
V
OUT
L
+V
S
–V
S
Figure 5.* 100 mV Step Response; G = +2, VS = ±2.5 V or ±5 V
Figure 6.* Step Response; G = +2, VS = ±2.5 V (2 V
±
Step) and
*NOTE: VS = ±2.5 V operation is identical to VS = +5 V single supply operation.
5 V (4 V Step)
Figure 8.* 100 mV Step Response; G = –1, VS = ±2.5 V or ±5 V
Figure 9.* Step Response; G = –1, VS = ±2.5 V (2 V
±
Step) and
5 V (4 V Step)
REV. B
–5–
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