Analog Devices AD8009 f Datasheet
1 GHz, 5,500 V/s
a
FEATURES
Ultrahigh Speed
5,500 V/s Slew Rate, 4 V Step, G = +2
545 ps Rise Time, 2 V Step, G = +2
Large Signal Bandwidth
440 MHz, G = +2
320 MHz, G = +10
Small Signal Bandwidth (–3 dB)
1 GHz, G = +1
700 MHz, G = +2
Settling Time 10 ns to 0.1%, 2 V Step, G = +2
Low Distortion over Wide Bandwidth
SFDR
–66 dBc @ 20 MHz, Second Harmonic
–75 dBc @ 20 MHz, Third Harmonic
Third Order Intercept (3IP)
26 dBm @ 70 MHz, G = +10
Good Video Specifications
Gain Flatness 0.1 dB to 75 MHz
0.01% Differential Gain Error, R
0.01 Differential Phase Error, R
High Output Drive
175 mA Output Load Drive
10 dBm with –38 dBc SFDR @ 70 MHz, G = +10
Supply Operation
+5 V to 5 V Voltage Supply
14 mA (Typ) Supply Current
APPLICATIONS
Pulse Amplifier
IF/RF Gain Stage/Amplifiers
High Resolution Video Graphics
High Speed Instrumentations
CCD Imaging Amplifier
2
1
0
–1
VO = 2V p-p
–2
–3
–4
–5
NORMALIZED GAIN (dB)
–6
–7
–8
1
FREQUENCY RESPONSE (MHz)
Figure 1. Large Signal Frequency Response; G = +2 and +10
REV. F
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= 150
L
= 150
L
G = +10
= 200
R
F
= 100
R
L
100
G = +2
= 301
R
F
= 150
R
L
100010
Low Distortion Amplifier
AD8009
FUNCTIONAL BLOCK DIAGRAMS
8-Lead Plastic SOIC (R-8) 5-Lead SOT-23 (RT-5)
AD8009
1
NC
2
–IN
3
+IN
–V
4
S
NC = NO CONNECT
NC
8
7
+V
S
6
OUT
NC
5
V
PRODUCT DESCRIPTION
The AD8009 is an ultrahigh speed current feedback amplifier
with a phenomenal 5,500 V/µs slew rate that results in a rise
time of 545 ps, making it ideal as a pulse amplifier.
The high slew rate reduces the effect of slew rate limiting and
results in the large signal bandwidth of 440 MHz required for
high resolution video graphic systems. Signal quality is maintained over a wide bandwidth with worst-case distortion of
–40 dBc @ 250 MHz (G = +10, 1 V p-p). For applications with
multitone signals, such as IF signal chains, the third order
intercept (3IP) of 12 dBm is achieved at the same frequency. This
distortion performance coupled with the current feedback
architecture make the AD8009 a flexible component for a gain
stage amplifier in IF/RF signal chains.
The AD8009 is capable of delivering over 175 mA of load current
and will drive four back terminated video loads while maintaining
low differential gain and phase error of 0.02% and 0.04°,
respectively. The high drive capability is also reflected in the
ability to deliver 10 dBm of output power @ 70 MHz with
–38 dBc SFDR.
The AD8009 is available in a small SOIC package and will
operate over the industrial temperature range –40°C to +85°C.
The AD8009 is also available in an SOT-23-5 and will operate
over the commercial temperature range of 0°C to 70°C.
–30
G = 2
= 301
R
F
–40
= 2V p-p
V
O
–50
–60
–70
DISTORTION (dBc)
–80
–90
–100
1
SECOND
150 LOAD
FREQUENCY RESPONSE (MHz)
SECOND
100 LOAD
THIRD
150 LOAD
Figure 2. Distortion vs. Frequency; G = +2
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781/329-4700 www.analog.com
Fax: 781/326-8703 © 2004 Analog Devices, Inc. All rights reserved.
AD8009
1
OUT
2
–V
S
34
+IN
THIRD
100 LOAD
5
7010
+V
–IN
S
AD8009–SPECIFICATIONS
(@ TA = 25C, VS = 5 V, RL = 100 ; for R Package: RF = 301 for G = +1, +2,
RF = 200 for G = +10; for RT Package: RF = 332 for G = +1, RF = 226 for G = +2 and RF = 191 for G = +10, unless otherwise noted.)
AD8009AR/JRT
Model Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V
R Package G = +1, R
RT Package G = +1, R
= 0.2 V p-p
O
= 301 Ω 1,000 MHz
F
= 332 Ω 845 MHz
F
G = +2 480 700 MHz
G = +10 300 350 MHz
Large Signal Bandwidth, V
= 2 V p-p G = +2 390 440 MHz
O
G = +10 235 320 MHz
Gain Flatness 0.1 dB, V
Slew Rate G = +2, R
Settling Time to 0.1% G = +2, R
= 0.2 V p-p G = +2, RL = 150 Ω 45 75 MHz
O
= 150 Ω, 4 V Step 4,500 5,500 V/µs
L
= 150 Ω, 2 V Step 10 ns
L
G = +10, 2 V Step 25 ns
Rise and Fall Time G = +2, RL = 150 Ω, 4 V Step 0.725 ns
HARMONIC/NOISE PERFORMANCE
Second Harmonic G = +2, V
= 2 V p-p 10 MHz –73 dBc
O
20 MHz –66 dBc
70 MHz –56 dBc
Third Harmonic 10 MHz –77 dBc
20 MHz –75 dBc
70 MHz –58 dBc
Third Order Intercept (3IP) 70 MHz 26 dBm
W.R.T. Output, G = +10 150 MHz 18 dBm
250 MHz 12 dBm
Input Voltage Noise f = 10 MHz 1.9 nV/√Hz
Input Current Noise f = 10 MHz, +In 46 pA/√Hz
f = 10 MHz, –In 41 pA/√Hz
Differential Gain Error NTSC, G = +2, R
NTSC, G = +2, R
Differential Phase Error NTSC, G = +2, R
= 150 Ω 0.01 0.03 %
L
= 37.5 Ω 0.02 0.05 %
L
= 150 Ω 0.01 0.03 Degrees
L
NTSC, G = +2, RL = 37.5 Ω 0.04 0.08 Degrees
DC PERFORMANCE
Input Offset Voltage 25 mV
T
MIN
to T
MAX
7mV
Offset Voltage Drift 4 µV/°C
–Input Bias Current 50 150 ±µA
to T
T
MIN
MAX
75 ±µA
+Input Bias Voltage 50 150 ±µA
to T
T
MIN
MAX
75 ±µA
Open-Loop Transresistance 90 250 kΩ
T
MIN
to T
MAX
170 kΩ
INPUT CHARACTERISTICS
Input Resistance +Input 110 kΩ
–Input 8 Ω
Input Capacitance +Input 2.6 pF
Input Common-Mode Voltage Range 3.8 ±V
Common-Mode Rejection Ratio VCM = ±2.5 50 52 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing ±3.7 ±3.8 V
Output Current R
= 10 Ω, PD Package = 0.7 W 150 175 mA
L
Short-Circuit Current 330 mA
POWER SUPPLY
Operating Range +5 ±6V
Quiescent Current 14 16 mA
to T
T
MIN
MAX
18 mA
Power Supply Rejection Ratio VS = ±4 V to ±6 V 64 70 dB
Specifications subject to change without notice.
–2–
REV. F
AD8009
(@ TA = 25C, VS = 5 V, RL = 100 , for R Package: RF = 301 for G = +1, +2,
SPECIFICATIONS
Model Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Small Signal Bandwidth, V
Large Signal Bandwidth, V
Gain Flatness 0.1 dB, V
Slew Rate G = +2, R
Settling Time to 0.1% G = +2, R
Rise and Fall Time G = +2, RL = 150 Ω, 4 V Step 0.725 ns
HARMONIC/NOISE PERFORMANCE
Second Harmonic G = +2, V
Third Harmonic 10 MHz –76 dBc
Input Voltage Noise f = 10 MHz 1.9 nV/√Hz
Input Current Noise f = 10 MHz, +In 46 pA/√Hz
DC PERFORMANCE
Input Offset Voltage 14 mV
–Input Bias Current 50 150 ±µA
+Input Bias Voltage 50 150 ±µA
INPUT CHARACTERISTICS
Input Resistance +Input 110 kΩ
Input Capacitance +Input 2.6 pF
Input Common-Mode Voltage Range 1.2 to 3.8 V
Common-Mode Rejection Ratio VCM = 1.5 V to 3.5 V 50 52 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing 1.1 to 3.9 V
Output Current R
Short-Circuit Current 330 mA
POWER SUPPLY
Operating Range +5 ±6V
Quiescent Current 10 12 mA
Power Supply Rejection Ratio VS = 4.5 V to 5.5 V 64 70 dB
Specifications subject to change without notice.
O
RF = 200 for G = +10).
AD8009AR/JRT
= 0.2 V p-p
O
G = +1, R
= 301 Ω 630 MHz
F
G = +2 430 MHz
G = +10 300 MHz
= 2 V p-p G = +2 365 MHz
O
G = +10 250 MHz
= 0.2 V p-p G = +2, RL = 150 Ω 65 MHz
= 150 Ω, 4 V Step 2,100 V/µs
L
= 150 Ω, 2 V Step 10 ns
L
G = +10, 2 V Step 25 ns
= 2 V p-p 10 MHz –74 dBc
O
20 MHz –67 dBc
70 MHz –48 dBc
20 MHz –72 dBc
70 MHz –44 dBc
f = 10 MHz, –In 41 pA/√Hz
–Input 8 Ω
= 10 Ω, PD Package = 0.7 W 175 mA
L
REV. F
–3–
AD8009
0
ABSOLUTE MAXIMUM RATINGS
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
1
Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . . 0.75 W
Input Voltage (Common-Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±3.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range R Package . . . . –65°C to +125°C
Operating Temperature Range (A Grade) . . . –40°C to +85°C
Operating Temperature Range (J Grade) . . . . . . . 0°C to 70°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package: θJA = 155°C/W.
5-Lead SOT-23 Package: θJA = 240°C/W.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8009
is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately 150°C. Exceeding this limit temporarily may cause
a shift in parametric performance due to a change in the stresses
exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure.
While the AD8009 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure
proper operation, it is necessary to observe the maximum power
derating curves.
2.0
TJ = 150 C
1.5
8-LEAD SOIC PACKAGE
1.0
0.5
MAXIMUM POWER DISSIPATION (W)
5-LEAD SOT-23 PACKAGE
0
–50
AMBIENT TEMPERATURE (ⴗC)
9
80
706050403020100–40 –30 –20 –10
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature
ORDERING GUIDE
Temperature Package Package
Model Range Description Option Branding
AD8009AR –40°C to +85°C 8-Lead SOIC R-8
AD8009AR-REEL –40°C to +85°C 8-Lead SOIC R-8
AD8009AR-REEL7 –40°C to +85°C 8-Lead SOIC R-8
AD8009ARZ* –40°C to +85°C 8-Lead SOIC R-8
AD8009ARZ-REEL* –40°C to +85°C 8-Lead SOIC R-8
AD8009ARZ-REEL7* –40°C to +85°C 8-Lead SOIC R-8
AD8009JRT-R2 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRT-REEL 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRT-REEL7 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRTZ-REEL* 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009JRTZ-REEL7* 0°C to 70°C 5-Lead SOT-23 RT-5 HKJ
AD8009ACHIPS Die
*Z = Pb-free part.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8009 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–4–
REV. F
Typical Performance Characteristics–
AD8009
3
2
1
0
R PACKAGE
–1
R
L
V
–2
O
G = +1, +2: R
–3
G = +10: R
RT PACKAGE
–4
G = +1: R
NORMALIZED GAIN (dB)
G = +2: R
–5
G = +10: RF = 191⍀
–6
–7
1
:
= 100⍀
= 200mV p–p
F
= 200⍀
F
= 332⍀
F
= 226⍀
F
G = +1, RT
G = +2, R AND RT
= 301⍀
G = +10, R AND RT
:
10 10 0
FREQUENCY (MHz)
G = +1, R
1000
TPC 1. Frequency Response; G = +1, +2, +10,
R and RT Packages
8
7
6
5
G = +2
4
= 301⍀
R
3
GAIN (dB)
2
1
0
–1
–2
R
V
F
= 150⍀
L
AS SHOWN
O
FREQUENCY (MHz)
4V p-p
2V p-p
1001 100010
TPC 2. Large Signal Frequency Response; G = +2
6.2
6.1
6.0
5.9
G = +2
R
= 301⍀
5.8
F
= 150⍀
R
L
5.7
= 200mV p-p
V
O
5.6
5.5
GAIN FLATNESS (dB)
5.4
5.3
5.2
10 1001
FREQUENCY (MHz)
TPC 4. Gain Flatness; G = +2
0.4
G = +2
= 301⍀
R
0.3
0.2
0.1
0
–0.1
GAIN FLATNESS (dB)
–0.2
–0.3
110100 1000 10000
FREQUENCY (MHz)
F
= 150⍀
R
L
= 200mV p-p
V
O
= 5V
V
S
TPC 5. Gain Flatness; G = +2; VS = 5 V
1000
8
7
6
5
4
3
GAIN (dB)
2
1
0
–1
–2
G = +2
= 301⍀
R
F
= 150⍀
R
L
= 2V p–p
V
O
FREQUENCY (MHz)
–40ⴗC
1001 100010
TPC 3. Large Signal Frequency Response vs.
Temperature; G = +2
REV. F
+85ⴗC
+85ⴗC
–40ⴗC
–5–
22
21
20
19
18
17
GAIN (dB)
16
15
14
13
12
G = +10
R
= 200⍀
F
RL = 100⍀
AS SHOWN
V
O
4V p-p
1001 100010
FREQUENCY (MHz)
2V p-p
TPC 6. Large Signal Frequency Response; G = +10
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