ANALOG DEVICES AD8008 Service Manual

FREQUENCY – MHz

–30

–40

–110

1 10010

DISTORTION – dBc

–70

–80

–90

–100

–50

–60

2ND

3RD

G = +2
R

L

= 150⍀

V

S

= 5V

V

OUT

= 2V p-p

查询AD8007AKS-REEL供应商

Ultralow Distortion

a

FEATURES
Extremely Low Distortion

Second Harmonic

–88 dBc @ 5 MHz
–83 dBc @ 20 MHz (AD8007)
–77 dBc @ 20 MHz (AD8008)

Third Harmonic

–101 dBc @ 5 MHz
–92 dBc @ 20 MHz (AD8007)
–98 dBc @ 20 MHz (AD8008)

High Speed

650 MHz, –3 dB Bandwidth (G = +1)
1000 V/␮s Slew Rate

Low Noise

2.7 nV/

22.5 pA/

Low Power

9 mA/Amplifier Typ Supply Current

Wide Supply Voltage Range

5 V to 12 V

0.5 mV Typical Input Offset Voltage
Small Packaging

SOIC-8, MSOP, and SC70 Packages Available

Hz Input Voltage Noise

√

Hz Input Inverting Current Noise

√

High Speed Amplifiers

AD8007/AD8008

CONNECTION DIAGRAMS

SOIC (RN-8) SC70 (KS-5)

AD8007

1

NC

(Top View)

2

–IN

3

+IN

–V

4

S

NC = NO CONNECT

8

NC

7

+V

6

V

5

NC

SOIC (RN) and MSOP (RM)

1

V

OUT1

–IN1

27

36

+IN1

–V

45

S

S

OUT

AD8008

(Top View)

V

1

OUT

–V

2

S

3

+IN

8

+V

V

–IN2

+IN2

AD8007

(Top View)

S

OUT2

5

+V

S

4

–IN

APPLICATIONS
Instrumentation
IF and Baseband Amplifiers
Filters
A/D Drivers
DAC Buffers

GENERAL DESCRIPTION

The AD8007 (single) and AD8008 (dual) are high perfor­mance current feedback amplifiers with ultralow distortion
and noise. Unlike other high performance amplifiers, the low
price and low quiescent current allow these amplifiers to be
used in a wide range of applications. ADI’s proprietary second
generation eXtra-Fast Complementary Bipolar (XFCB)
process enables such high performance amplifiers with low
power consumption.

The AD8007/AD8008 have 650 MHz bandwidth, 2.7 nV/√Hz
voltage noise, –83 dB SFDR @ 20 MHz (AD8007), and –77 dBc
SFDR @ 20 MHz (AD8008).

With the wide supply voltage range (5 V to 12 V) and wide band­width, the AD8007/AD8008 are designed to work in a variety of
applications. The AD8007/AD8008 amplifiers have a low power
supply current of 9 mA/amplifier.

The AD8007 is available in a tiny SC70 package as well as a
standard 8-lead SOIC. The dual AD8008 is available in both

REV. C

Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties that
may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Analog Devices.

8-lead SOIC and 8-lead MSOP packages. These amplifiers are
rated to work over the industrial temperature range of –40°C
to +85°C.

Figure 1. AD8007 Second and Third Harmonic
Distortion vs. Frequency

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] www.analog.com
Fax: [phone] © Analog Devices, Inc., 2002

AD8007/AD8008–SPECIFICATIONS

VS = ⴞ5 V

(@ TA = 25ⴗC, RS = 200 ⍀, RL = 150 ⍀, RF = 499 ⍀, Gain = +2, unless otherwise noted.)

AD8007/AD8008

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +1, V

G = +1, V
G = +2, V
G = +1, V

Bandwidth for 0.1 dB Flatness V

= 0.2 V p-p, G = +2, RL = 150 Ω 50 90 MHz

O

Overdrive Recovery Time ±2.5 V Input Step, G = +2, R
Slew Rate G = +1, V
Settling Time to 0.1% G = +2, V

= 0.2 V p-p, RL = 1 kΩ 540 650 MHz

O

= 0.2 V p-p, RL = 150 Ω 250 500 MHz

O

= 0.2 V p-p, RL = 150 Ω 180 230 MHz

O

= 2 V p-p, RL = 1 kΩ 200 235 MHz

O

= 1 kΩ 30 ns

= 2 V Step 900 1000 V/µs

O

= 2 V Step 18 ns

O

L

Settling Time to 0.01% G = +2, VO = 2 V Step 35 ns

NOISE/HARMONIC PERFORMANCE

Second Harmonic fC = 5 MHz, VO = 2 V p-p –88 dBc

= 20 MHz, VO = 2 V p-p –83/–77 dBc

f

Third Harmonic f

IMD f

Third Order Intercept f

C

= 5 MHz, VO = 2 V p-p –101 dBc

C

f

= 20 MHz, VO = 2 V p-p –92/–98 dBc

C

= 19.5 MHz to 20.5 MHz, RL = 1 kΩ,

C

V

= 2 V p-p –77 dBc

O

= 5 MHz, RL = 1 kΩ 43.0/42.5 dBm

C

= 20 MHz, RL = 1 kΩ 42.5 dBm

f

C

Crosstalk (AD8008) f = 5 MHz, G = +2 –68 dB
Input Voltage Noise f = 100 kHz 2.7 nV/√Hz
Input Current Noise –Input, f = 100 kHz 22.5 pA/√Hz

+Input, f = 100 kHz 2 pA/√Hz

Differential Gain Error NTSC, G = +2, R

= 150 Ω 0.015 %

L

Differential Phase Error NTSC, G = +2, RL = 150 Ω 0.010 Degree

DC PERFORMANCE

Input Offset Voltage 0.5 4 mV
Input Offset Voltage Drift 3 µV/°C
Input Bias Current +Input 4 8 µA

–Input 0.4 6 µA

Input Bias Current Drift +Input 16 nA/°C

–Input 9 nA/°C

Transimpedance V

= ±2.5 V, RL = 1 kΩ 1.0 1.5 MΩ

O

RL = 150 Ω 0.4 0.8 MΩ

INPUT CHARACTERISTICS

Input Resistance +Input 4 MΩ
Input Capacitance +Input 1 pF
Input Common-Mode Voltage Range –3.9 to +3.9 V
Common-Mode Rejection Ratio VCM = ±2.5 V 56 59 dB

OUTPUT CHARACTERISTICS

Output Saturation Voltage VCC – VOH, VOL – VEE, RL = 1 kΩ 1.1 1.2 V
Short Circuit Current, Source 130 mA
Short Circuit Current, Sink 90 mA
Capacitive Load Drive 30% Overshoot 8 pF

POWER SUPPLY

Operating Range 5 12 V
Quiescent Current per Amplifier 9 10.2 mA
Power Supply Rejection Ratio

+PSRR 59 64 dB
–PSRR 59 65 dB

REV. C–2–

AD8007/AD8008

VS = +5 V

(@ TA = 25ⴗC, RS = 200 ⍀, RL = 150 ⍀, RF = 499 ⍀, Gain = +2, unless otherwise noted.)

AD8007/AD8008

Parameter Conditions Min Typ Max Unit

DYNAMIC PERFORMANCE

–3 dB Bandwidth G = +1, V

G = +1, V
G = +2, V

G = +1, V
Bandwidth for 0.1 dB Flatness Vo = 0.2 V p-p, G = +2, R
Overdrive Recovery Time 2.5 V Input Step, G = +2, R
Slew Rate G = +1, V
Settling Time to 0.1% G = +2, V

= 0.2 V p-p, RL = 1 kΩ 520 580 MHz

O

= 0.2 V p-p, RL = 150 Ω 350 490 MHz

O

= 0.2 V p-p, RL = 150 Ω 190 260 MHz

O

= 1 V p-p, RL = 1 kΩ 270 320 MHz

O

= 2 V Step 665 740 V/µs

O

= 2 V Step 18 ns

O

= 150 Ω 72 120 MHz

L

= 1 kΩ 30 ns

L

Settling Time to 0.01% G = +2, VO = 2 V Step 35 ns

NOISE/HARMONIC PERFORMANCE

Second Harmonic fC = 5 MHz, VO = 1 V p-p –96/–95 dBc

= 20 MHz, VO = 1 V p-p –83/–80 dBc

f
Third Harmonic f

IMD f

Third Order Intercept f

C

= 5 MHz, VO = 1 V p-p –100 dBc

C

f

= 20 MHz, VO = 1 V p-p –85/–88 dBc

C

= 19.5 MHz to 20.5 MHz, RL = 1 kΩ, –89/–87 dBc

C

V

= 1 V p-p

O

= 5 MHz, RL = 1 kΩ 43.0 dBm

C

= 20 MHz, RL = 1 kΩ 42.5/41.5 dBm

f

C

Crosstalk (AD8008) Output to Output f = 5 MHz, G = +2 –68 dB
Input Voltage Noise f = 100 kHz 2.7 nV/√Hz
Input Current Noise –Input, f = 100 kHz 22.5 pA/√Hz

+Input, f = 100 kHz 2 pA/√Hz

DC PERFORMANCE

Input Offset Voltage 0.5 4 mV
Input Offset Voltage Drift 3 µV/°C
Input Bias Current +Input 4 8 µA

–Input 0.7 6 µA
Input Bias Current Drift +Input 15 nA/°C

–Input 8 nA/°C
Transimpedance V

= 1.5 V to 3.5 V, RL = 1 kΩ 0.5 1.3 MΩ

O

RL = 150 Ω 0.4 0.6 MΩ

INPUT CHARACTERISTICS

Input Resistance +Input 4 MΩ
Input Capacitance +Input 1 pF
Input Common-Mode Voltage Range 1.1 to 3.9 V
Common-Mode Rejection Ratio VCM = 1.75 V to 3.25 V 54 56 dB

OUTPUT CHARACTERISTICS

Output Saturation Voltage VCC – VOH, VOL – VEE, RL = 1 kΩ 1.05 1.15 V
Short Circuit Current, Source 70 mA
Short Circuit Current, Sink 50 mA
Capacitive Load Drive 30% Overshoot 8 pF

POWER SUPPLY

Operating Range 5 12 V
Quiescent Current per Amplifier 8.1 9 mA
Power Supply Rejection Ratio

+PSRR 59 62 dB
–PSRR 59 63 dB

REV. C

–3–

AD8007/AD8008

WARNING!

ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS*

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . See Figure 2

Common-Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . ± 1.0 V

Output Short Circuit Duration . . . . . . . . . . . . . . See Figure 2

Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +125°C

Operating Temperature Range . . . . . . . . . . . –40°C to +85°C

Lead Temperature Range (soldering 10 sec) . . . . . . . . . 300°C

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

MAXIMUM POWER DISSIPATION

The maximum safe power dissipation in the AD8007/AD8008
packages is limited by the associated rise in junction temperature

) on the die. The plastic encapsulating the die will locally reach

(T

J

the junction temperature. At approximately 150°C, which is the
glass transition temperature, the plastic will change its proper­ties. Even temporarily exceeding this temperature limit may
change the stresses that the package exerts on the die, perma­nently shifting the parametric performance of the AD8007/
AD8008. Exceeding a junction temperature of 175°C for an
extended period of time can result in changes in the silicon
devices, potentially causing failure.

The still-air thermal properties of the package and PCB (θ
ambient temperature (T
package (P

) determine the junction temperature of the die.

D

), and the total power dissipated in the

A

),

JA

The junction temperature can be calculated as follows:

TT P

=+ ×

ADA

JJ

θ

()

The power dissipated in the package (PD) is the sum of the quies­cent power dissipation and the power dissipated in the package
due to the load drive for all outputs. The quiescent power is the
voltage between the supply pins (V
(I

). Assuming the load (RL) is referenced to midsupply, the

S

total drive power is V

/2 ⫻ I

S

package and some in the load (V

) times the quiescent current

S

, some of which is dissipated in the

OUT

OUT

⫻ I

). The difference

OUT

between the total drive power and the load power is the drive
power dissipated in the package.

P

= quiescent power + (total drive power – load power):

D

PVI

=×

()

DSS



+×




VVRV

S OUT

2






L

2

OUT

−

R

L

RMS output voltages should be considered. If RL is referenced
to V

, as in single-supply operation, then the total drive power

S

is V

⫻ I

OUT

.

S

If the rms signal levels are indeterminate, then consider the
worst case, when V

= VS/4 for RL to midsupply:

OUT





V

S





4



PVI

=×

()

DSS



+

R

L

2

In single-supply operation, with RL referenced to VS, worst case is:

V

V

OUT

S

=

2

Airflow will increase heat dissipation, effectively reducing θJA.
Also, more metal directly in contact with the package leads from
metal traces, through holes, ground, and power planes will
reduce the θ

. Care must be taken to minimize parasitic capaci-

JA

tances at the input leads of high speed op amps as discussed in
the board layout section.

Figure 2 shows the maximum safe power dissipation in the pack­age versus the ambient temperature for the SOIC-8 (125°C/
W),

MSOP (150°C/W), and SC70 (210°C/W) packages on a

JEDEC standard 4-layer board. θ

2.0

1.5
MSOP-8

1.0

SC70-5

0.5

MAXIMUM POWER DISSIPATION – W

0

–60 100–40

–20 0 20 406080

AMBIENT TEMPERATURE – ⴗC

values are approximations.

JA

SOIC-8

Figure 2. Maximum Power Dissipation vs.
Temperature for a 4-Layer Board

OUTPUT SHORT CIRCUIT

Shorting the output to ground or drawing excessive current for
the AD8007/AD8008 will likely cause catastrophic failure.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate
on the human body and test equipment and can discharge without detection. Although the AD8007/
AD8008 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.

REV. C–4–

AD8007/AD8008

ORDERING GUIDE

Model Temperature Range

AD8007AR +85ºC 8-Lead SOIC RN-8
AD8007AR-REEL +85ºC 8-Lead SOIC RN-8
AD8007AR-REEL7 +85ºC 8-Lead SOIC RN-8
AD8007AKS-REEL +85ºC 5-Lead SC70 KS-5 HTA
AD8007AKS-REEL7 –40ºC to +85ºC 5-Lead SC70 KS-5 HTA
AD8008AR –40ºC to +85ºC 8-Lead SOIC RN-8
AD8008AR-REEL7 –40ºC to +85ºC 8-Lead SOIC RN-8
AD8008AR-REEL –40ºC to +85ºC 8-Lead SOIC RN-8
AD8008ARM-REEL +85ºC 8-Lead MSOP RM-8 H2B
AD8008ARM-REEL7 +85ºC 8-Lead MSOP RM-8 H2B

–40ºC to
–40ºC to

–40ºC to
–40ºC to

–40ºC to
–40ºC to

Package
Description

Package Outline

Branding
Information

REV. C

–5–

AD8007/AD8008–Typical Performance Characteristics

(VS = ⴞ5 V, RL = 150 ⍀, RS = 200 ⍀, RF = 499 ⍀, unless otherwise noted.)

3

2

1

0

–1

–2

–3

–4

NORMALIZED GAIN – dB

–5

–6

–7

1 10010

G = +10

G = –1

FREQUENCY – MHz

G = +1

G = +2

1000

TPC 1. Small Signal Frequency Response for Various Gains

3

G = +1

2

1

0

–1

–2

GAIN – dB

–3

–4

–5

–6

–7

RL = 150⍀, VS = ⴞ5V

RL = 150⍀, VS = +5V

10010

FREQUENCY – MHz

RL = 1k⍀, VS = ⴞ5V

1000

6.4

G = +2

6.3

6.2

6.1

6.0

5.9

GAIN – dB

5.8

5.7

5.6

5.5

5.4

FREQUENCY – MHz

VS = +5V

VS = ⴞ5V

10010

TPC 4. 0.1 dB Gain Flatness; VS = +5, ±5 V

9

G = +2

8

7

6

5

4

GAIN – dB

3

2

1

0

–1

RL = 150⍀, VS = ⴞ5V

RL = 1k⍀, VS = ⴞ5V

FREQUENCY – MHz

10010

RL = 1k⍀, VS = +5V

RL = 150⍀

= +5V

V

S

1000

1000

TPC 2. Small Signal Frequency Response for VS and R

3

G = +1

2

RL = 1k⍀

1

0

–1

–2

GAIN – dB

–3

–4

–5

–6

–7

RS = 301⍀

10010

FREQUENCY – MHz

RS = 200⍀

RS = 249⍀

1000

TPC 3. Small Signal Frequency Response for
Various R

Values

S

LOAD

TPC 5. Small Signal Frequency Response for VS and R

9

G = +2

8

7

6

5

4

GAIN – dB

3

2

1

0

–1

RF = RG = 499⍀

RF = RG = 649⍀

10010

FREQUENCY – MHz

RF = RG = 324⍀

RF = RG = 249⍀

1000

TPC 6. Small Signal Frequency Response for Various
Feedback Resistors, R

F=RG

LOAD

–6–

REV. C