ANALOG DEVICES AD8003 Service Manual
Triple, 1.5 GHz Op Amp
FEATURES
High speed
1650 MHz (G = +1)
730 MHz (G = +2, VO = 2 V p-p)
4300 V/μs (G = +2, 4 V step)
Settling time 12 ns to 0.1%, 2 V step
Excellent for QXGA resolution video
Gain flatness 0.1 dB to 190 MHz
0.05% differential gain error, R
0.01° differential phase error, R
Low voltage offset: 0.7 mV (typical)
Low input bias current: 7 μA (typical)
Low noise: 1.8 nV/√Hz
Low distortion over wide bandwidth: SFDR −73 dBc @ 20 MHz
High output drive: 100 mA output load drive
Supply operation: +5 V to ±5 V voltage supply
Supply current: 9.5 mA/amplifier
APPLICATIONS
High resolution video graphics
Professional video
Consumer video
High speed instrumentation
Muxing
GENERAL DESCRIPTION
The AD8003 is a triple ultrahigh speed current feedback amplifier.
Using ADI’s proprietary eXtra Fast Complementary Bipolar
(XFCB) process, the AD8003 achieves a bandwidth of 1.5 GHz
and a slew rate of 4300 V/μs. Additionally, the amplifier provides
excellent dc precision with an input bias current of 50 μA
maximum and a dc input voltage of 0.7 mV.
The AD8003 has excellent video specifications with a frequency
response that remains flat out to 190 MHz and 0.1% settling within
12 ns to ensure that even the most demanding video systems
maintain excellent fidelity. For applications that use NTSC video,
as well as high speed video, the amplifier provides a differential
gain of 0.05% and a differential gain of 0.01°.
The AD8003 has very low spurious-free dynamic range (SFDR)
(−73 dBc @ 20 MHz) and noise (1.8 nV/√Hz). With a supply
range between 5 V and 11 V and ability to source 100 mA of
output current, the AD8003 is ideal for a variety of applications.
Rev. B
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
= 150 Ω
L
= 150 Ω
L
AD8003
CONNECTION DIAGRAM
S2
FEEDBACK 2
+V
19
G=+5
+V
18
FEEDBACK 3
17
–IN 3
16
+IN 3
15
POWER DOWN 3
14
–V
13
G=+1
+V
FEEDBACK 1
–IN 1
+IN 1
POWER DOWN 1
–V
–VS2POWER DOWN 2
24 23 22 21 20
1
S1
2
3
4
5
6
S1
7 8 9 10 11 12
NC
+IN 2
–IN 2
OUT 1NCOUT 2NCOUT 3
Figure 1. 24-Lead, 4 mm × 4 mm LFCSP_VQ (CP-24)
The AD8003 operates on only 9.5 mA of supply current per
amplifier. The independent power-down function of the AD8003
reduces the quiescent current even further to 1.6 mA.
The AD8003 amplifier is available in a compact 4 mm × 4 mm,
24-lead LFCSP_VQ. The AD8003 is rated to work over the
industrial temperature range of −40°C to +85°C.
3
VS=±5V
G=+1,R
2
G=+2,+5,R
R
1
V
0
–1
–2
–3
–4
–5
NORMALIZED CLOSED-L OOP GAIN (dB)
–6
–7
1 100 1000
Figure 2. Large Signal Frequency Response for Various Gains
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 www.analog.com
Fax: 781.461.3113 ©2005–2008 Analog Devices, Inc. All rights reserved.
=150Ω
L
OUT
=432Ω
F
=2Vp-p
= 464Ω
F
10
FREQUENCY (MHz)
G=+2
S3
S3
05721-001
05721-009
AD8003
TABLE OF CONTENTS
Features .............................................................................................. 1
Gain Configurations .................................................................. 12
Applications ....................................................................................... 1
Connection Diagram ....................................................................... 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications with ±5 V Supply ..................................................... 3
Specifications with +5 V Supply ..................................................... 4
Absolute Maximum Ratings ............................................................ 5
Thermal Resistance ...................................................................... 5
ESD Caution .................................................................................. 5
Typical Performance Characteristics ............................................. 6
Applications Information .............................................................. 12
REVISION HISTORY
9/08—Rev. A to Rev. B
Changes Applications Section ......................................................... 1
Changes to Ordering Guide .......................................................... 15
RGB Video Driver ...................................................................... 12
Printed Circuit Board Layout ....................................................... 13
Low Distortion Pinout ............................................................... 13
Signal Routing ............................................................................. 13
Exposed Paddle ........................................................................... 13
Power Supply Bypassing ............................................................ 13
Grounding ................................................................................... 14
Outline Dimensions ....................................................................... 15
Ordering Guide .......................................................................... 15
2/06—Rev. 0 to Rev. A
Changes to Figure 34 ...................................................................... 11
10/05—Revision 0: Initial Version
Rev. B | Page 2 of 16
AD8003
SPECIFICATIONS WITH ±5 V SUPPLY
TA = 25°C, VS = ±5 V, RL = 150 Ω, Gain = +2, RF = 464 Ω, unless otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +1, Vo = 0.2 V p-p, RF = 432 Ω 1650 MHz
G = +2, Vo = 2 V p-p 730 MHz
G = +10, Vo = 0.2 V p-p 290 MHz
G = +5, Vo = 2 V p-p 330 MHz
Bandwidth for 0.1 dB Flatness Vo = 2 V p-p 190 MHz
Slew Rate G = +2, Vo = 2 V step, RL = 150 Ω 3800 V/μs
Settling Time to 0.1% G = +2, Vo = 2 V step 12 ns
Overload Recovery Input/Output 30/40 ns
NOISE/HARMONIC PERFORMANCE
Second/Third Harmonic @ 5 MHz G = +1, Vo = 2 V p-p 76/97 dBc
Second/Third Harmonic @ 20 MHz G = +1, Vo = 2 V p-p 79/73 dBc
Input Voltage Noise f = 1 MHz 1.8 nV/√Hz
Input Current Noise (I−/I+) f = 1 MHz 36/3 pA/√Hz
Differential Gain Error NTSC, G = +2, RL= 150 Ω 0.05 %
Differential Phase Error NTSC, G = +2, RL= 150 Ω 0.01 Degree
DC PERFORMANCE
Input Offset Voltage −9.3 +0.7 +9.3 mV
T
Input Offset Voltage Drift 7.4 μV/°C
Input Bias Current +IB/−IB −19/−40 −7/−7 +4/+50 μA
T
Input Offset Current ±14.2 μA
Transimpedance Vo = ±2.5 V 400 600 1100 kΩ
INPUT CHARACTERISTICS
Noninverting Input Impedance 1.6/3 MΩ/pF
Input Common-Mode Voltage Range ±3.6 V
Common-Mode Rejection Ratio VCM = ±2.5 V −51 −48 −46 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 150 Ω ±3.85 ±3.9 ±3.92 V
Linear Output Current VO = 2 V p-p, second harmonic < −50 dBc 100 mA
Capacitive Load Drive 40% over shoot 27 pF
POWER DOWN PINS
Power-Down Input Voltage Power down <VS − 2.5 V
Enable >VS − 2.5 V
Turn-Off Time
Turn-On Time
Input Current
Enabled 0.1 μA
Power-Down −365 −235 −85 μA
POWER SUPPLY
Operating Range 4.5 10 V
Quiescent Current per Amplifier Enabled 8.1 9.5 10.2 mA
Quiescent Current per Amplifier Power down 1.2 1.4 1.6 mA
Power Supply Rejection Ratio (+PSRR/−PSRR) −59/−57 −57/−53 −55/−50 dB
− T
MIN
MIN
1.08 mV
MAX
− T
(+IB/−IB) −3.8/+29.5 μA
MAX
50% of power-down voltage to
10% of V
final, VIN = 0.5 V p-p
OUT
50% of power-down voltage to
90% of V
final, VIN = 0.5 V p-p
OUT
40 ns
130 ns
Rev. B | Page 3 of 16
AD8003
SPECIFICATIONS WITH +5 V SUPPLY
TA = 25°C, VS = 5 V, RL = 150 Ω, Gain = +2, RF = 464 Ω, unless otherwise noted.
Table 2.
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
–3 dB Bandwidth G = +1, Vo = 0.2 V p-p, RF = 432 Ω 1050 MHz
G = +2, Vo = 2 V p-p 590 MHz
G = +10, Vo = 0.2 V p-p 290 MHz
G = +5, Vo = 2 V p-p 310 MHz
Bandwidth for 0.1 dB Flatness Vo = 2 V p-p 83 MHz
Slew Rate G = +2, Vo = 2 V step, RL = 150 Ω 2860 V/μs
Settling Time to 0.1% G = +2, Vo = 2 V step 12 ns
Overload Recovery Input/Output 40/60 ns
NOISE/HARMONIC PERFORMANCE
Second/Third Harmonic @ 5 MHz G = +1, Vo = 2 V p-p 75/78 dBc
Second/Third Harmonic @ 20 MHz G = +1, Vo = 2 V p-p 66/61 dBc
Input Voltage Noise f = 1 MHz 1.8 nV/√Hz
Input Current Noise (I−/I+) f = 1 MHz 36/3 pA/√Hz
Differential Gain Error NTSC, G = +2, RL= 150 Ω 0.04 %
Differential Phase Error NTSC, G = +2, RL= 150 Ω 0.01 Degree
DC PERFORMANCE
Input Offset Voltage −6.5 +2.7 +11 mV
T
Input Offset Voltage Drift 14.2 μV/°C
Input Bias Current (+IB/−IB) −21/−50 −7.7/−2.3 +5/+48 μA
T
Input Offset Current ±5.4 μA
Transimpedance 300 530 1500 kΩ
INPUT CHARACTERISTICS
Noninverting Input Impedance 1.6/3 MΩ/pF
Input Common-Mode Voltage Range 1.3 to 3.7 V
Common-Mode Rejection Ratio −50 −48 −45 dB
OUTPUT CHARACTERISTICS
Output Voltage Swing RL = 150 Ω ±1.52 ±1.57 ±1.62 V
Linear Output Current VO = 2 V p-p, second harmonic < −50 dBc 70 mA
Capacitive Load Drive 45% over shoot 27 pF
POWER DOWN PINS
Power-Down Input Voltage Power down <VS − 2.5 V
Enable >VS − 2.5 V
Turn-Off Time
Turn-On Time
Input Current
Enabled 0.1 μA
Power-Down −160 −43 +80 μA
POWER SUPPLY
Operating Range 4.5 10 V
Quiescent Current per Amplifier Enabled 6.3 7.9 9.4 mA
Quiescent Current per Amplifier Power down 0.8 0.9 1.1 mA
Power Supply Rejection Ratio (+PSRR/−PSRR) −59/−56 −57/−53 −55/−50 dB
− T
MIN
MIN
2.06 mV
MAX
− T
(+IB/−IB) −4/−27.8 μA
MAX
50% of power-down voltage to
10% of V
final, VIN = 0.5 V p-p
OUT
50% of power-down voltage to
90% of V
final, VIN = 0.5 V p-p
OUT
125 ns
80 ns
Rev. B | Page 4 of 16
AD8003
(
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 11 V
Power Dissipation See Figure 3
Common-Mode Input Voltage −VS − 0.7 V to +VS + 0.7 V
Differential Input Voltage
±V
S
Exposed Paddle Voltage −VS
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering 10 sec) 300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, θJA is specified
for device soldered in circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type θJA Unit
24-Lead LFCSP_VQ 70 °C/W
Maximum Power Dissipation
The maximum safe power dissipation for the AD8003 is limited
by the associated rise in junction temperature (T
approximately 150°C, which is the glass transition temperature,
the plastic changes its properties. Even temporarily exceeding
this temperature limit may change the stresses that the package
exerts on the die, permanently shifting the parametric performance
of the AD8003. Exceeding a junction temperature of 175°C for
an extended period can result in changes in silicon devices,
potentially causing degradation or loss of functionality.
) on the die. At
J
RMS output voltages should be considered. If R
, as in single-supply operation, the total drive power is VS ×
−V
S
I
. If the rms signal levels are indeterminate, consider the
OUT
worst case, when V
()
D
In single-supply operation with
is
V
= VS/2.
OUT
= VS/4 for RL to midsupply.
OUT
2
)
4
/V
S
+×=
IVP
SS
R
L
R
referenced to −VS, worst case
L
Airflow increases heat dissipation, effectively reducing θ
is referenced to
L
.
JA
In addition, more metal directly in contact with the package
leads and exposed paddle from metal traces, through holes,
ground, and power planes reduce θ
.
JA
Figure 3 shows the maximum safe power dissipation in the
package vs. the ambient temperature for the exposed paddle,
4 mm × 4 mm LFCSP_VQ (70°C/W) package on a JEDEC
standard 4-layer board. θ
3.0
2.5
2.0
1.5
1.0
0.5
MAXIMUM POW ER DISSIPATION (W )
0
–35 –15 5 25 45 65 85 105
–55 125
Figure 3. Maximum Power Dissipation vs. Temperature for a 4-Layer Board
values are approximations.
JA
AMBIENT TEMPERATURE (°C)
05721-037
ESD CAUTION
The power dissipated in the package (P
) is the sum of the
D
quiescent power dissipation and the power dissipated in the die
due to the AD8003 drive at the output. The quiescent power is
the voltage between the supply pins (V
current (I
).
S
= Quiescent Power + (Total Drive Power – Load Power)
P
D
⎛
V
V
()
D
⎜
IVP
SS
⎜
⎝
OUTS
×+×=
R
2
L
) times the quiescent
S
⎞
⎟
⎟
⎠
2
V
OUT
–
R
L
Rev. B | Page 5 of 16
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