Analog Devices AD8001AR, AD8001AQ, AD8001AN, AD8001ACHIPS, AD8001R-EB Datasheet

REV. C

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reliable. However, no responsibility is assumed by Analog Devices for its
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a

AD8001

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: [phone] World Wide Web Site: http://www.analog.com
Fax: [phone] © Analog Devices, Inc., 1999

800 MHz, 50 mW

Current Feedback Amplifier

FEATURES
Excellent Video Specifications (R

L

= 150 ⍀, G = +2)

Gain Flatness 0.1 dB to 100 MHz

0.01% Differential Gain Error

0.025ⴗ Differential Phase Error

Low Power

5.5 mA Max Power Supply Current (55 mW)

High Speed and Fast Settling

880 MHz, –3 dB Bandwidth (G = +1)
440 MHz, –3 dB Bandwidth (G = +2)
1200 V/␮s Slew Rate
10 ns Settling Time to 0.1%

Low Distortion

–65 dBc THD, f

C

= 5 MHz

33 dBm 3rd Order Intercept, F

1

= 10 MHz

–66 dB SFDR, f = 5 MHz

High Output Drive

70 mA Output Current
Drives Up to Four Back-Terminated Loads (75 ⍀ Each)

While Maintaining Good Differential Gain/Phase
Performance (0.05%/0.25ⴗ)

APPLICATIONS
A-to-D Driver
Video Line Driver
Professional Cameras
Video Switchers
Special Effects
RF Receivers

FUNCTIONAL BLOCK DIAGRAMS

8-Lead DIP (N-8, Q-8) 5-Lead
and SOIC (SO-8) SOT-23-5

1

2

3

4

8

7

6

5

AD8001

NC

NC

–IN

NC

+IN

NC = NO CONNECT

OUT

V–

V+

1V

OUT

AD8001

–V

S

+IN

2

34

5

+V

S

–IN

PRODUCT DESCRIPTION

The AD8001 is a low power, high-speed amplifier designed

to operate on ±5 V supplies. The AD8001 features unique

GAIN – dB

9

6

–12

10M 100M 1G

3

0

–3

–6

–9

FREQUENCY – Hz

VS = 65V
R

FB

= 820V

VS = 65V
R

FB

= 1kV

G = +2
R

L

= 100V

Figure 1. Frequency Response of AD8001

transimpedance linearization circuitry. This allows it to drive
video loads with excellent differential gain and phase perfor­mance on only 50 mW of power. The AD8001 is a current
feedback amplifier and features gain flatness of 0.1 dB to 100 MHz
while offering differential gain and phase error of 0.01% and

0.025°. This makes the AD8001 ideal for professional video

electronics such as cameras and video switchers. Additionally,
the AD8001’s low distortion and fast settling make it ideal for
buffer high-speed A-to-D converters.

The AD8001 offers low power of 5.5 mA max (V

S

= ±5 V) and

can run on a single +12 V power supply, while being capable of
delivering over 70 mA of load current. These features make this
amplifier ideal for portable and battery-powered applications
where size and power are critical.

The outstanding bandwidth of 800 MHz along with 1200 V/µs

of slew rate make the AD8001 useful in many general purpose

high-speed applications where dual power supplies of up to ±6 V

and single supplies from 6 V to 12 V are needed. The AD8001 is

available in the industrial temperature range of –40°C to +85°C.

Figure 2. Transient Response of AD8001; 2 V Step, G = +2

REV. C

–2–

AD8001–SPECIFICATIONS

(@ TA = + 25ⴗC, VS = ⴞ5 V, RL = 100 ⍀, unless otherwise noted)

Model AD8001A

Conditions Min Typ Max Units

DYNAMIC PERFORMANCE

–3 dB Small Signal Bandwidth, N Package G = +2, < 0.1 dB Peaking, R

F

= 750 Ω 350 440 MHz

G = +1, < 1 dB Peaking, R

F

= 1 kΩ 650 880 MHz

R Package G = +2, < 0.1 dB Peaking, R

F

= 681 Ω 350 440 MHz

G = +1, < 0.1 dB Peaking, R

F

= 845 Ω 575 715 MHz

RT Package G = +2, < 0.1 dB Peaking, R

F

= 768 Ω 300 380 MHz

G = +1, < 0.1 dB Peaking, R

F

= 1 kΩ 575 795 MHz

Bandwidth for 0.1 dB Flatness

N Package G = +2, R

F

= 750 Ω 85 110 MHz

R Package G = +2, R

F

= 681 Ω 100 125 MHz

RT Package G = +2, R

F

= 768 Ω 120 145 MHz

Slew Rate G = +2, V

O

= 2 V Step 800 1000 V/µs

G = –1, V

O

= 2 V Step 960 1200 V/µs

Settling Time to 0.1% G = –1, V

O

= 2 V Step 10 ns

Rise and Fall Time G = +2, VO = 2 V Step, R

F

= 649 Ω 1.4 ns

NOISE/HARMONIC PERFORMANCE

Total Harmonic Distortion f

C

= 5 MHz, VO = 2 V p-p –65 dBc

G = +2, R

L

= 100 Ω
Input Voltage Noise f = 10 kHz 2.0 nV/√Hz
Input Current Noise f = 10 kHz, +In 2.0 pA/√Hz

–In 18 pA/√Hz

Differential Gain Error NTSC, G = +2, R

L

= 150 Ω 0.01 0.025 %

Differential Phase Error NTSC, G = +2, R

L

= 150 Ω 0.025 0.04 Degree

Third Order Intercept f = 10 MHz 33 dBm
1 dB Gain Compression f = 10 MHz 14 dBm
SFDR f = 5 MHz –66 dB

DC PERFORMANCE

Input Offset Voltage 2.0 5.5 mV

T

MIN–TMAX

2.0 9.0 mV

Offset Drift 10 µV/°C
–Input Bias Current 5.0 25 ±µA

T

MIN–TMAX

35 ±µA

+Input Bias Current 3.0 6.0 ±µA

T

MIN–TMAX

10 ±µA

Open Loop Transresistance V

O

= ±2.5 V 250 900 kΩ

T

MIN–TMAX

175 kΩ

INPUT CHARACTERISTICS

Input Resistance +Input 10 MΩ

–Input 50 Ω

Input Capacitance +Input 1.5 pF

Input Common-Mode Voltage Range 3.2 ±V

Common-Mode Rejection Ratio

Offset Voltage V

CM

= ±2.5 V 50 54 dB

–Input Current V

CM

= ±2.5 V, T

MIN–TMAX

0.3 1.0 µA/V

+Input Current V

CM

= ±2.5 V, T

MIN–TMAX

0.2 0.7 µA/V

OUTPUT CHARACTERISTICS

Output Voltage Swing R

L

= 150 Ω 2.7 3.1 ±V

Output Current R

L

= 37.5 Ω 50 70 mA

Short Circuit Current 85 110 mA

POWER SUPPLY

Operating Range ±3.0 ±6.0 V

Quiescent Current T

MIN–TMAX

5.0 5.5 mA

Power Supply Rejection Ratio +V

S

= +4 V to +6 V, –VS = –5 V 60 75 dB

–V

S

= – 4 V to –6 V, +VS = +5 V 50 56 dB

–Input Current T

MIN–TMAX

0.5 2.5 µA/V

+Input Current T

MIN–TMAX

0.1 0.5 µA/V

Specifications subject to change without notice.

REV. C

AD8001

–3–

ABSOLUTE MAXIMUM RATINGS

1

Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V

Internal Power Dissipation

2

Plastic DIP Package (N) . . . . . . . . . . . . . . . . . . . . . . . 1.3 W

Small Outline Package (R) . . . . . . . . . . . . . . . . . . . . . . 0.9 W

SOT-23-5 Package (RT) . . . . . . . . . . . . . . . . . . . . . . . 0.5 W

Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V

S

Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±1.2 V

Output Short Circuit Duration

. . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves

Storage Temperature Range N, R . . . . . . . . . –65°C to +125°C

Operating Temperature Range (A Grade) . . . –40°C to +85°C

Lead Temperature Range (Soldering 10 sec) . . . . . . . . +300°C

NOTES

1

Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.

2

Specification is for device in free air:

8-Lead Plastic DIP Package: θJA = 90°C/W
8-Lead SOIC Package: θJA = 155°C/W
8-Lead Cerdip Package: θJA = 110°C/W
5-Lead SOT-23-5 Package: θJA = 260°C/W

MAXIMUM POWER DISSIPATION

The maximum power that can be safely dissipated by the
AD8001 is limited by the associated rise in junction tempera­ture. The maximum safe junction temperature for plastic
encapsulated devices is determined by the glass transition tem-

perature of the plastic, approximately +150°C. Exceeding this

limit temporarily may cause a shift in parametric performance
due to a change in the stresses exerted on the die by the package.

Exceeding a junction temperature of +175°C for an extended

period can result in device failure.

While the AD8001 is internally short circuit protected, this
may not be sufficient to guarantee that the maximum junction

temperature (+150°C) is not exceeded under all conditions. To

ensure proper operation, it is necessary to observe the maximum
power derating curves.

2.0

0
–50 80

1.5

0.5

–40

1.0

010–10–20–30 20 30 40 50 60 70

90

AMBIENT TEMPERATURE – 8C

MAXIMUM POWER DISSIPATION – Watts

8-LEAD

PLASTIC DIP PACKAGE

8-LEAD

SOIC PACKAGE

TJ = +1508C

5-LEAD

SOT-23-5 PACKAGE

Figure 3. Plot of Maximum Power Dissipation vs.
Temperature

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8001 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

ORDERING GUIDE

Temperature Package Package Brand

Model Range Description Option Code

AD8001AN –40°C to +85°C 8-Lead Plastic DIP N-8
AD8001AQ –55°C to +125°C 8-Lead Cerdip Q-8
AD8001AR –40°C to +85°C 8-Lead SOIC SO-8
AD8001AR-REEL –40°C to +85°C 13" Tape and REEL SO-8
AD8001AR-REEL7 –40°C to +85°C 7" Tape and REEL SO-8
AD8001ART-REEL –40°C to +85°C 13" Tape and REEL RT-5 HEA
AD8001ART-REEL7 –40°C to +85°C 7" Tape and REEL RT-5 HEA
AD8001ACHIPS –40°C to +85°C Die Form

5962-9459301MPA

1

–55°C to +125°C 8-Lead Cerdip Q-8

AD8001R-EB+2

2

SOIC Evaluation Board, G = +2

NOTES

1

Standard Military Drawing Device.

2

Refer to Evaluation Board section.

REV. C

AD8001

–4–

HP8133A

PULSE

GENERATOR

806V

+V

S

RL = 100V

50V

V

IN

0.1mF

0.001mF

AD8001

0.1mF

0.001mF

TR/TF = 50ps

806V

V

OUT

TO

TEKTRONIX
CSA 404 COMM.
SIGNAL
ANALYZER

–V

S

Figure 4. Test Circuit , Gain = +2

Figure 5. 1 V Step Response, G = +2

0.5V

5ns

Figure 6. 2 V Step Response, G = +1

5ns400mV

Figure 7. 2 V Step Response, G = +2

LeCROY 9210

PULSE

GENERATOR

909V

+V

S

RL = 100V

–V

S

50V

V

IN

0.1mF

0.001mF

AD8001

0.1mF

0.001mF

TR/TF = 350ps

V

OUT

TO

TEKTRONIX
CSA 404 COMM.
SIGNAL
ANALYZER

Figure 8. Test Circuit, Gain = +1

Figure 9. 100 mV Step Response, G = +1

REV. C

AD8001

–5–

GAIN – dB

9

6

–12

10M 100M 1G

3

0

–3

–6

–9

FREQUENCY – Hz

VS = 65V
R

FB

= 820V

VS = 65V
R

FB

= 1kV

G = +2
R

L

= 100V

Figure 10. Frequency Response, G = +2

OUTPUT – dB

0.1

0

–0.9

1M 10M 100M

–0.1

–0.2

–0.3

–0.4

–0.5

FREQUENCY – Hz

–0.6

–0.7

–0.8

RF =
649V

RF = 698V

RF = 750V

G = +2
RL = 100V

V

IN

= 50mV

Figure 11. 0.1 dB Flatness, R Package (for N Package Add

50

Ω

to RF)

–50

–80

–110

100k 100M10M1M10k

–90

–100

–70

–60

FREQUENCY – Hz

HARMONIC DISTORTION – dBc

V

OUT

= 2V p-p
RL = 1kV
G = +2

65V SUPPLIES

3RD HARMONIC

2ND HARMONIC

Figure 12. Distortion vs. Frequency, RL = 1 k

Ω

VALUE OF FEEDBACK RESISTOR (RF) – V

–3dB BANDWIDTH – MHz

1000

0

1000

600

200

600

400

500

800

900800700

R

PACKAGE

N

PACKAGE

VS = 65V
R

L

= 100V

G = +2

Figure 13. –3 dB Bandwidth vs. R

F

–50

–70

–100

100k 100M10M1M10k

–80

–90

–60

FREQUENCY – Hz

HARMONIC DISTORTION – dBc

V

OUT

= 2V p-p
RL = 100V
G = +2

65V SUPPLIES

2ND HARMONIC

3RD HARMONIC

Figure 14. Distortion vs. Frequency, RL = 100

Ω

0.08

0.01

–0.01

0

0.00

0.00

0.02

0.02

0.04

0.06

100

IRE

DIFF GAIN – %

DIFF PHASE – Degrees

–0.02

G = +2
RF = 806V

1 BACK TERMINATED

LOAD (150V)

2 BACK TERMINATED

LOADS (75V)

1 AND 2 BACK TERMINATED

LOADS (150V AND 75V)

Figure 15. Differential Gain and Differential Phase