10Bits
Relative Accuracy± 1LSB maxSee Terminology
Differential Nonlinearity± 1LSB maxNo Missing Codes; See Terminology
Bias Offset Error± 12LSB maxSee Terminology
Bias Offset Error Match10LSB maxBetween Channels, AD7777/AD7778 Only; See Terminology
Plus or Minus Full-Scale Error± 12LSB maxSee Terminology
Plus or Minus Full-Scale Error Match 10LSB maxBetween Channels, AD7777/AD7778 Only; See Terminology
ANALOG INPUTS
Input Voltage Range
All InputsV
BIAS
± V
SWING
Input Current+200µA maxVIN = V
V min/V max
BIAS
± V
; Any Channel
SWING
REFERENCE INPUT
REFIN1.9/2.1V min/V maxFor Specified Performance
REFIN Input Current+200µA max
REFERENCE OUTPUT
REFOUT1.9/2.1V min/V maxNominal REFOUT = 2.0 V
DC Output Impedance5Ω typ
Reference Load Change± 2mV maxFor Reference Load Current Change of 0 to ± 500 µA
± 5mV maxFor Reference Load Current Change of 0 to ± 1 mA
Short Circuit Current
3
20mA maxSee Terminology
Reference Load Should Not Change During Conversion
LOGIC OUTPUTS
DB0–DB9, BUSY/INT
, Output Low Voltage0.4V maxI
V
OL
, Output High Voltage4.0V minI
V
OH
Floating State Leakage Current± 10µA max
Floating State Capacitance
3
10pF max
= 1.6 mA
SINK
SOURCE
= 200 µA
ADC Output CodingTwos Complement
LOGIC INPUTS
DB0–DB9, CS, WR, RD, CLKIN
Input Low Voltage, V
Input High Voltage, V
Input Leakage Current10µA max
Input Capacitance
, Power-Down Mode1.5mA maxCR8 = 1. All Linear Circuitry OFF
I
CC
Power-Up Time to Operational
Specifications500µs maxFrom Power-Down Mode
DYNAMIC PERFORMANCESee Terminology
Signal to Noise and Distortion
S/(N+D) Ratio–56dB minV
Total Harmonic Distortion (THD)–60dB minV
Intermodulation Distortion (IMD)–75dB typfa = 103.2 kHz, fb = 96.5 kHz with f
= 99.88 kHz Full-Scale Sine Wave with f
IN
= 99.88 kHz Full-Scale Sine Wave with f
IN
SAMPLING
SAMPLING
SAMPLING
= 380.95 kHz
= 380.95 kHz
= 380.95 kHz. Both
Signals Are Sine Waves at Half-Scale Amplitude
Channel-to-Channel Isolation–90dB typVIN = 100 kHz Full-Scale Sine Wave with f
NOTES
1
Temperature range as follows: A = –40°C to +85°C.
2
1 LSB = (2 × V
3
Guaranteed by design, not production tested.
Specifications subject to change without notice.
)/1024 = 1.95 mV for V
SWING
SWING
= 1.0 V.
SAMPLING
= 380.95 kHz
–2–
REV. A
AD7776/AD7777/AD7778
TIMING SPECIFICATIONS
ParameterLabelLimit at T
1, 2
(VCC = +5 V ⴞ 5%; AGND = DGND = 0 V; all specifications T
MIN
to T
UnitTest Conditions/Comments
MAX
MIN
to T
, unless otherwise noted.)
MAX
INTERFACE TIMING
CS Falling Edge to WR or RD Falling Edget
WR or RD Rising Edge to CS Rising Edget
WR Pulsewidtht
CS or RD Active to Valid Data
Bus Relinquish Time after RD
3, 4
3, 5
1
2
3
t
4
t
5
0ns min
0ns min
53ns min
60ns maxTimed from Whichever Occurs Last
10ns min
45ns max
Data Valid to WR Rising Edget
Data Valid after WR Rising Edget
WR Rising Edge to BUSY Falling Edget
6
7
8
55ns min
10ns min
1.5 t
2.5 t
CLKIN
+ 70ns max
CLKIN
ns minCR9 = 0
WR Rising Edge to BUSY Rising Edge or
INT Falling Edget
WR or RD Falling Edge to INT Rising Edget
NOTES
1
See Figures 1 to 3.
2
All input signals are specified with tr = tf = 5 ns (10% to 90% of 5 V) and timed from a voltage level of 1.6 V.
3
100% production tested. All other times are guaranteed by design, not production tested.
4
t4 is measured with the load circuit of Figure 4 and defined as the time required for an output to cross 0.8 V or 2.4 V.
5
t5 is derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 4. The measured time is then extrapolated back
9
t
10
11
to remove the effects of charging or discharging the 100 pF capacitor. This means that the time t5 quoted above is the true bus relinquish time of the device and, as
such, is independent of the external bus loading capacitance.
Specifications subject to change without notice.
19.5 t
33.5 t
+ 70ns maxSingle Conversion, CR6 = 0
CLKIN
+ 70ns maxDouble Conversion, CR6 = 1
CLKIN
60ns maxCR9 = 1
CS
RD
DB0–DB9
CS
WR
DB0–DB9
t
1
t
4
Figure 1. Read Cycle Timing
t
1
t
3
t
6
Figure 2. Write Cycle Timing
FIRST
CONVERSION
FINISHED
t
3
t
2
t
5
WR, RD
BUSY
(CR8 = 0)
INT
(CR8 = 1)
t
8
t
11
Figure 3.
t
2
DB n
t
7
C
OUT
100pF
(CR6 = 0)
t
9
t
10
t
9
t
10
BUSY/INT
Timing
I
OL
1.6mA
I
OH
200µA
SECOND
CONVERSION
FINISHED (CR6 = 1)
AD7777/AD7778 ONLY
+2.1V
Figure 4. Load Circuit for Bus Timing Characteristics
REV. A
–3–
AD7776/AD7777/AD7778
ABSOLUTE MAXIMUM RATINGS*
(TA = +25°C unless otherwise noted)
VCC to AGND or DGND . . . . . . . . . . . . . . . . . . –0.3 V, +7 V
AGND, RTN to DGND . . . . . . . . . . . . . –0.3 V, V
+ 0.3 V
CC
CS, RD, WR, CLKIN, DB0–DB9,
BUSY/INT to DGND . . . . . . . . . . . . . –0.3 V, V
Analog Input Voltage to AGND . . . . . . . –0.3 V, V
*Stresses above those listed under absolute maximum ratings may cause permanent
damage to the device. This is a stress rating only; functional operation of the device
at these or any other conditions above those listed in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
AD7776AR–40°C to +85°C1RW-24
AD7777AN–40°C to +85°C4N-28
AD7777AR–40°C to +85°C4RW-28
AD7778AS–40°C to +85°C8S-44
*R = SOIC, N = PDIP, S = PQFP
ORDERING GUIDE
TemperatureNo. ofPackage
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD7776/AD7777/AD7778 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.