True rms value
Average rectified value
Absolute value
Provides:
200 mV full-scale input range
(larger inputs with input attenuator)
High input impedance of 1012 V
Low input bias current: 25 pA max
High accuracy: ±0.3 mV ±0.3% of reading
RMS conversion with signal crest factors up to 5
Wide power supply range: +2.8 V, –3.2 V to ±16.5 V
Low power: 200 mA max supply current
Buffered voltage output
No external trims needed for specified accuracy
AD737—an unbuffered voltage output version with chip
power-down also available
GENERAL DESCRIPTION
The AD736 is a low power, precision, monolithic true rms-to-dc
converter. It is laser trimmed to provide a maximum error of
±0.3 mV ± 0.3% of reading with sine wave inputs. Furthermore,
it maintains high accuracy while measuring a wide range of
input waveforms, including variable duty cycle pulses and triac
(phase) controlled sine waves. The low cost and small size of
this converter make it suitable for upgrading the performance
of non-rms precision rectifiers in many applications. Compared
to these circuits, the AD736 offers higher accuracy at an equal
or lower cost.
The AD736 can compute the rms value of both ac and dc input
voltages. It can also be operated ac-coupled by adding one external capacitor. In this mode, the AD736 can resolve input signal
levels of 100 µV rms or less, despite variations in temperature or
supply voltage. High accuracy is also maintained for input
waveforms with crest factors of 1 to 3. In addition, crest factors
as high as 5 can be measured (while introducing only 2.5%
additional error) at the 200 mV full-scale input level.
The AD736 has its own output buffer amplifier, thereby providing a great deal of design flexibility. Requiring only 200 µA
of power supply current, the AD736 is optimized for use in
portable multimeters and other battery-powered applications.
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable.
However, no responsibility is assumed by Analog Devices for its use, nor for any
infringements of patents or other rights of third parties that may result from its use.
Specifications subject to change without notice. No license is granted by implication
or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
True RMS-to-DC Converter
FUNCTIONAL BLOCK DIAGRAM
8kΩ
1
C
C
FULL
WAVE
V
2
IN
AMPLIFIER
C
3
F
–V
S
4
BIAS
SECTION
INPUT
RECTIFIER
RMS CORE
Figure 1.
AD736
8kΩ
OUTPUT
AMPLIFIER
The AD736 allows the choice of two signal input terminals: a
high impedance FET input (10
12
Ω) that directly interfaces with
high Z input attenuators and a low impedance input (8 kΩ) that
allows the measurement of 300 mV input levels while operating
from the minimum power supply voltage of +2.8 V, −3.2 V. The
two inputs may be used either single-ended or differentially.
The AD736 has a 1% reading error bandwidth that exceeds
10 kHz for the input amplitudes from 20 mV rms to 200 mV
rms while consuming only 1 mW.
The AD736 is available in four performance grades. The
AD736J and AD736K grades are rated over the 0°C to +70°C
and −20°C to +85°C commercial temperature ranges. The
AD736A and AD736B grades are rated over the −40°C to +85°C
industrial temperature range. The AD736 is available in three
low c ost, 8-lead packages: PDIP, SOIC, and CERDIP.
PRODUCT HIGHLIGHTS
The AD736 is capable of computing the average rectified value,
absolute value, or true rms value of various input signals.
Only one external component, an averaging capacitor, is
required for the AD736 to perform true rms measurement.
The low power consumption of 1 mW makes the AD736
suitable for many battery-powered applications.
12
A high input impedance of 10
external buffer when interfacing with input attenuators.
A low impedance input is available for those applications that
require an input signal up to 300 mV rms operating from low
power supply voltages.
Table 1. @25°C ±5 V supplies, ac-coupled with 1 kHz sine wave input applied, unless otherwise noted. Specifications in bold are
tested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels.
AD736J/AD736A AD736K/AD736B
Parameter Conditions Min Typ Max Min Typ Max Unit
TRANSFER FUNCTION
= √
V
OUT
CONVERSION ACCURACY 1 kHz sine wave
Tot al E rror, Inter nal Trim
All Grades 0 mV rms–200 mV rms 0.3/0.3
200 mV to 1 V rms −1.2
T
to T
MIN
MAX
A and B Grades @ 200 mV rms
J and K Grades @ 200 mV rms 0.007
vs. Supply Voltage
@ 200 mV rms Input VS = ±5 V to ±16.5 V
V
DC Reversal Error, DC-Coupled @ 600 mV dc
Nonlinearity2, 0 mV–200 mV @ 100 mV rms
1
Using C
C
0.5/0.5
±2.0
0.7/0.7
+0.06
−0.18
+0.1 0
−0.3 0
1.3 2.5
0.25
0.35 0
= ±5 V to ±3 V
S
0
0
0
Total Error, External Trim 0 mV rms–200 mV rms 0.1/0.5 0.1/0.3 ±mV/±% of Reading
Input Bias Current VS = ±3 V to ±16.5 V 1 25 1 25 pA
Low Impedance Input (Pin 1)
Signal Range
Continuous rms Level VS = +2.8 V, –3.2 V 300 300 mV rms
V
= ±5 V to ±16.5 V 1 1 V rms
S
Peak Transient Input VS = +2.8 V, −3.2 V ±1.7 ±1.7 V
V
V
= ±5 V ±3.8 ±3.8 V
S
= ±16.5 V ±11 ±11 V
S
Input Resistance 6.4 8 9.6 6.4 8 9.6 kΩ
Maximum Continuous
All supply voltages ±12 ±12 V p-p
Nondestructive Input
Input Offset Voltage
J and K Grades
A and B Grades
4
±3
±3
vs. Temperature 8 30 8 30 µV/°C
vs. Supply VS = ±5 V to ±16.5 V 50
V
= ±5 V to ±3 V 80 80 µV/V
S
150
1
Accuracy is specified with the AD736 connected as shown in Figure 18 with capacitor CC.
2
Nonlinearity is defined as the maximum deviation (in percent error) from a straight line connecting the readings at 0 mV rms and 200 mV rms. Output offset voltage is
adjusted to zero.
3
Error versus crest factor is specified as additional error for a 200 mV rms signal. Crest factor = V
4
DC offset does not limit ac resolution.
PEAK
/V rms.
2
Avg(V
)
IN
0.2/0.2
−1.2
0.007
+0.06
−0.18
1.3 2.5 % of Reading
0.25
±0.9
±4.0
V
±2.7 V
V
12
50
0.3/0.3
±2.0
0.5/0.5
+0.1
−0.3
0.35
200
1
±mV/±% of Reading
% of Reading
±mV/±% of Reading
±% of Reading/°C
%/V
%/V
% of Reading
mV rms
V rms
Ω
±3
±3
150
mV
mV
µV/V
Rev. F | Page 3 of 16
AD736
AD736J/AD736A AD736K/AD736B
Parameter Conditions Min Typ Max Min Typ Max Unit
OUTPUT CHARACTERISTICS
Output Offset Voltage
J and K Grades ±0.1
A and B Grades
±0.5
±0.5
vs.Temperature 1 20 1 20 µV/°C
vs. Supply VS = ±5 V to ±16.5 V 50
V
= ±5 V to ±3 V 50 50 µV/V
S
130
Output Voltage Swing
2 kΩ Load VS = +2.8 V, −3.2 V 0–1.6 1.7 0–1.6 1.7 V
V
V
No Load VS = ±16.5 V
= ±5 V 0–3.6 3.8 0–3.6 3.8 V
S
= ±16.5 V
S
0–4
0–4
5
12
Output Current 2 2 mA
Short-Circuit Current 3 3 mA
Output Resistance @ dc 0.2 0.2 Ω
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
PIN CONFIGURATION
8kΩ
FULL
WAVE
RECTIFIER
INPUT
AMPLIFIER
BIAS
SECTION
RMS CORE
and 8-Lead CERDIP (Q-8) Packages
AD736
8kΩ
OUTPUT
AMPLIFIER
8
COM
+V
7
6
OUTPUT
C
5
S
AV
00834-F-001
5
8-Lead PDIP Package: θJA = 165°C/W
8-Lead CERDIP Package: θ
8-Lead SOIC Package: θ
= 110°C/W
JA
= 155°C/W
JA
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on
the human body and test equipment and can discharge without detection. Although this product features
proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy
electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance
degradation or loss of functionality.
Rev. F | Page 5 of 16
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