Linear-in-dB gain control
Pin-programmable gain ranges
−11 dB to +31 dB with 90 MHz bandwidth
9 dB to 51 dB with 9 MHz bandwidth
Any intermediate range, for example −1 dB to +41 dB
with 30 MHz b
Bandwidth independent of variable gain
1.3 nV/√Hz input noise spectral density
±0.5 dB typical gain accuracy
APPLICATIONS
RF/IF AGC amplifiers
Video gain controls
A/D range extensions
Signal measurements
GENERAL DESCRIPTION
The AD603 is a low noise, voltage-controlled amplifier for use
in RF and IF AGC systems. It provides accurate, pin-selectable
gains of −11 dB to +31 dB with a bandwidth of 90 MHz or +9 dB to
51+ dB with a bandwidth of 9 MHz. Any intermediate gain
range may be arranged using one external resistor. The input
referred noise spectral density is only 1.3 nV/√Hz, and power
consumption is 125 mW at the recommended ±5 V supplies.
andwidth
Variable Gain Amplifier
AD603
The decibel gain is linear in dB, accurately calibrated, and stable
ver temperature and supply. The gain is controlled at a high
o
impedance (50 MΩ), low bias (200 nA) differential input; the
scaling is 25 mV/dB, requiring a gain control voltage of only
1 V to span the central 40 dB of the gain range. An overrange
and underrange of 1 dB is provided whatever the selected range.
The gain control response time is less than 1 μs for a 40 dB change.
The differential gain control interface allows the use of either
ferential or single-ended positive or negative control voltages.
dif
Several of these amplifiers may be cascaded and their gain
control gains offset to optimize the system SNR.
The AD603 can drive a load impedance as low as 100 Ω with
lo
w distortion. For a 500 Ω load in shunt with 5 pF, the total
harmonic distortion for a ±1 V sinusoidal output at 10 MHz is
typically −60 dBc. The peak specified output is ±2.5 V minimum
into a 500 Ω load.
The AD603 uses a patented proprietary circuit topology—the
X-AM
P®. The X-AMP comprises a variable attenuator of 0 dB
to −42.14 dB followed by a fixed-gain amplifier. Because of the
attenuator, the amplifier never has to cope with large inputs and
can use negative feedback to define its (fixed) gain and dynamic
performance. The attenuator has an input resistance of 100 Ω,
laser trimmed to ±3%, and comprises a 7-stage R-2R ladder
network, resulting in an attenuation between tap points of
6.021 dB. A proprietary interpolation technique provides a
continuous gain control function that is linear in dB.
The AD603 is specified for operation from −40°C to +85°C.
FUNCTIONAL BLOCK DIAGRAM
8
VPOS
6
VNEG
1
GPOS
2
GNEG
3
VINP
4
COMM
*NOMINAL VALUES.
Rev. H
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Anal og Devices for its use, nor for any infringements of patents or ot her
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
@ TA = 25°C, VS = ±5 V, –500 mV ≤ VG ≤ +500 mV, GNEG = 0 V, –10 dB to +30 dB gain range, RL = 500 Ω, and CL = 5 pF, unless
otherwise noted.
Table 1.
Parameter Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Input Resistance Pin 3 to Pin 4 97 100 103 Ω
Input Capacitance 2 pF
Input Noise Spectral Density
Noise Figure f = 10 MHz, gain = maximum, RS = 10 Ω 8.8 dB
1 dB Compression Point f = 10 MHz, gain = maximum, RS = 10 Ω −11 dBm
Peak Input Voltage ±1.4 ±2 V
OUTPUT CHARACTERISTICS
−3 dB Bandwidth V
Slew Rate RL ≥ 500 Ω 275 V/μs
Peak Output
2
Output Impedance f ≤ 10 MHz 2 Ω
Output Short-Circuit Current 50 mA
Group Delay Change vs. Gain f = 3 MHz; full gain range ±2 ns
Group Delay Change vs. Frequency VG = 0 V; f = 1 MHz to 10 MHz ±2 ns
Differential Gain 0.2 %
Differential Phase 0.2 Degree
Total Harmonic Distortion f = 10 MHz, V
Third-Order Intercept f = 40 MHz, gain = maximum, RS = 50 Ω 15 dBm
ACCURACY
Gain Accuracy, f = 100 kHz; Gain (dB) = (40 VG + 10) dB −500 mV ≤ VG ≤ +500 mV −1 ±0.5 +1 dB
T
to T
MIN
MAX
Gain, f = 10.7 MHz VG = -0.5 V −10.3 −9.0 −8.0 dB
V
V
Output Offset Voltage
T
to T
MIN
MAX
Output Offset Variation vs. V
T
to T
MIN
MAX
GAIN CONTROL INTERFACE
Gain Scaling Factor 100 kHz 39.4 40 40.6 dB/V
T
to T
MIN
MAX
10.7 MHz 38.7 39.3 39.9 dB/V
GNEG, GPOS Voltage Range
Input Bias Current 200 nA
Input Offset Current 10 nA
Differential Input Resistance Pin 1 to Pin 2 50 MΩ
Response Rate Full 40 dB gain change 80 dB/μs
POWER SUPPLY
Specified Operating Range ±4.75 ±6.3 V
Quiescent Current 12.5 17 mA
T
to T
MIN
1
Typical open or short-circuited input; noise is lower when system is set to maximum gain and input is short-circuited. This figure includes the effects of both voltage
and current noise sources.
2
Using resistive loads of 500 Ω or greater or with the addition of a 1 kΩ pull-down resistor when driving lower loads.
3
The dc gain of the main amplifier in the AD603 is ×35.7; therefore, an input offset of 100 μV becomes a 3.57 mV output offset.
4
GNEG and GPOS, gain control, and voltage range are guaranteed to be within the range of −VS + 4.2 V to +VS − 3.4 V over the full temperature range of −40°C to +85°C.
MAX
1
Input short-circuited 1.3 nV/√Hz
= 100 mV rms 90 MHz
OUT
RL ≥ 500 Ω ±2.5 ±3.0 V
= 1 V rms −60 dBc
OUT
−1.5 +1.5 dB
= 0.0 V +9.5 +10.5 +11.5 dB
G
= 0.5 V +29.3 +30.3 +31.3 dB
3
G
VG = 0 V −20 +20 mV
−30 +30 mV
G
−500 mV ≤ VG ≤ +500 mV −20 +20 mV
−30 +30 mV
38 42 dB/V
4
−1.2 +2.0 V
20 mA
Rev. H | Page 3 of 24
AD603
www.BDTIC.com/ADI
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
Supply Voltage ±V
Internal Voltage VINP (Pin 3) ±2 V Continuous
±VS for 10 ms
GPOS, GNEG (Pin 1 and Pin2) ±V
Internal Power Dissipation 400 mW
Operating Temperature Range
AD603A −40°C to +85°C
AD603S −55°C to +125°C
Storage Temperature Range −65°C to +150°C
Lead Temperature (Soldering, 60 sec) 300°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
S
±7.5 V
S
Table 3. Thermal Characteristics
Package Type θ
8-Lead SOIC 155 33 °C/W
8-Lead CERDIP 140 15 °C/W
JA
θ
JC
Unit
ESD CAUTION
Rev. H | Page 4 of 24
AD603
www.BDTIC.com/ADI
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
1
GPOS
GNEG
VINP
COMM
AD603
2
3
TOP VIEW
(Not to Scale)
4
Figure 2. 8-Lead SOIC Pin Configuration
8
7
6
5
VPOS
VOUT
VNEG
FDBK
GPOS
GNEG
VINP
00539-002
COMM
Figure 3. 8-Lead CERDIP Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 GPOS Gain Control Input High (Positive Voltage Increases Gain).
2 GNEG Gain Control Input Low (Negative Voltage Increases Gain).
3 VINP
4 COMM
5 FDBK
6 VNEG
7 VOUT