2.5 ns Tr/Tf for a 3 V Step
300 MHz Toggle Rate
Can Drive 25 ⍀ Lines and Lower
Peak Dynamic Current Capability of 400 mA
Inhibit Leakage <1 A
On-Chip Temperature Sensor
APPLICATIONS
Automatic Test Equipment
Semiconductor Test Systems
Board Test Systems
Instrumentation and Characterization Equipment
Capability Pin Driver
AD53500
FUNCTIONAL BLOCK DIAGRAM
PRODUCT DESCRIPTION:
The AD53500 is a complete high speed driver designed for use
in digital or mixed signal test systems where high speed and high
output drive capabilities are needed. Combining a high speed
monolithic process and a unique surface mount package, this
product attains superb electrical performance while preserving
optimum packing densities and long-term reliability thanks to an
ultrasmall 20-lead, PSOP package with built-in heat sink.
High and low reference levels can be set within a –2 V to +6 V
range with low offset voltage and high gain accuracy. A 2.5 Ω
output resistance allows use of an external backmatch resistor for
application to 50 Ω, 25 Ω or other complex impedance load
requirements. Without a backmatch resistor it is also capable of
driving highly capacitive loads, typically achieving a rise/fall time
of less than 10 ns with a 1000 pF capacitance. To test I/O
devices, the pin driver can be switched into a high impedance
state (Inhibit Mode), electrically removing the driver from the
path. The pin driver leakage current in inhibit is typically less
than 1 µA and output capacitance is typically less than 18 pF.
Transitions from HI/LO or to inhibit are controlled through the
data and inhibit inputs. The input circuitry utilizes high-speed
differential inputs with a common-mode range of –2 V to +5 V.
This allows for direct interface to the precision of differential
ECL timing or the simplicity of stimulating the pin driver from a
single-ended CMOS or TTL logic source or any combination
over the common-mode range. The analog logic HI/LO inputs
are equally easy to interface, typically requiring 50 µA of bias
current.
REV. 0
Information furnished by Analog Devices is believed to be accurate and
reliable. However, no responsibility is assumed by Analog Devices for its
use, nor for any infringements of patents or other rights of third parties
which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Analog Devices.
(All specifications are at TJ = +85ⴗC ⴞ 5ⴗC, +VS = +10 V ⴞ 3%, –VS = +6 V ⴞ 3%
unless otherwise noted. All temperature coefficients are measured over TJ = 75ⴗC–95ⴗC). (In test figures, voltmeter loading is 1 M⍀ or greater,
scope probe loading is 100 k⍀ in parallel with 5 pF.) 39 nF capacitors must be connected between VCC and V
ParameterMinTypMaxUnitsTest Conditions
DIFFERENTIAL INPUT CHARACTERISTICS
(DATA to DATA, INH to INH)
Common-Mode Input Voltage–2+5Volts
Differential Input RangeECL or TTLECL = –0.8 V/–1.8 V, TTL = 0 V/5 V
Bias Current±100µAV
REFERENCE INPUTS
Bias Currents–50+50µAV
OUTPUT CHARACTERISTICS
Logic High Range+1+6VoltsDATA = H, V
Logic Low Range–2+2VoltsDATA = L, V
Amplitude (V
, VL Interaction–10+10mV100 mV Output Amplitude
V
H
and VL)0.18VoltsVL = –0.05 V, VH = +0.05 V and
H
Absolute Accuracy
Offset–100+100 mVDATA = H, VH = 0 V, VL = –2 V
V
H
Gain + Linearity Error±0.3 ±5% of V
V
H
Offset–100+100 mVDATA = L, VL = 0 V, VH = +6 V
V
L
Gain + Linearity Error± 0.3 ±5% of V
V
L
Offset TC, V
or V
H
L
0.5mV/°CV
+ mVDATA = H, VL = –2 V, VH = +1 V to +6 V
H
+ mVDATA = L, VL = –2 V to +2 V, VH = +6 V
L
Output Resistance1.52.55.5ΩV
Dynamic Current Limit400mAC
Static Current Limit60180mAOutput to –2 V, V
–180–60mADATA = H and Output to +6 V, V
DYNAMIC PERFORMANCE, DRIVE
and VL)
(V
H
Propagation Delay Time2.5nsMeasured at 50%, V
Propagation Delay TC1ps/°CMeasured at 50%, V
Delay Matching, Edge-to-Edge100psMeasured at 50%, V
Rise and Fall Time
1 V Swing0.85nsMeasured 20%–80%, V
3 V Swing2.5nsMeasured 10%–90%, V
5 V Swing4.0nsMeasured 10%–90%, V
Rise and Fall Time TC
1 V Swing±1ps/°CMeasured 20%–80%, V
3 V Swing±2ps/°CMeasured 10%–90%, V
5 V Swing±3ps/°CMeasured 10%–90%, V
Overshoot, Undershoot and Preshoot+5.0 +30% of Step + mV V
Settling Time
to 15 mV40nsV
to 4 mV8µsV
Delay Change vs. Pulsewidth100psV
Minimum Pulsewidth
3 V Swing3.8nsV
5 V Swing5.5nsV
Toggle Rate300MHzVL = –1.8 V, VH = –0.8 V, V
= –2 V, +5 V
CM
, VH = 5 V
L
= –2 V, VH = +6 V
V
L
, VH = 0 V, +5 V and –2 V, 0 V
L
= +3 V, VL = 0 V, I
H
+30 mA
= 39 nF, VH = +5 V, VL = 0 V
BYP
C
LOAD
VL = –2 V, DATA = L
= –400 mV
V
L
= –400 mV
V
L
= –400 mV
V
L
H–VL
= 0 V, VH = 0.5 V
L
= 0 V, VH = 0.5 V
L
= 0 V, VH = 2 V, Pulsewidth = 2.5 ns/
L
Period = 10 ns and Pulsewidth = 30 ns/
Period = 120 ns
= 0 V, VH = 3 V, Output = 2.7 V p-p,
L
Measure at 50%
= 0 V, VH = 5 V, Output = 4.5 V p-p,
L
Measure at 50%
and between VEE and V
HDCPL
= –2 V, VH = +1 V to +6 V
L
= –2 V to +2 V, VH = +6 V
L
= 0, –30 mA,
OUT
= 1000 pF, Tr/Tf = 10 ns
= +6 V, VL = –1 V,
H
= +400 mV,
H
= +400 mV,
H
= +400 mV,
H
= 0 V, VH = 1 V
L
= 0 V, VH = 3 V
L
= 2 V, VH = 3 V
L
= 0 V, VH = 1 V
L
= 0 V, VH = 3 V
L
= 0 V, VH = 5 V
L
= 0.5 V, 1 V, 3 V, 8 V
> 600 mV p-p
OUT
LDCPL
= +6 V,
H
.
–2–
REV. 0
ParameterMinTypMaxUnitsTest Conditions
WARNING!
ESD SENSITIVE DEVICE
DYNAMIC PERFORMANCE, INHIBIT
Delay Time, Active to Inhibit210nsMeasured at 50%, V
= –2 V, 50 Ω Terminated to Ground
V
L
Delay Time, Inhibit to Active210nsMeasured at 50%, V
= –2 V, 50 Ω Terminated to Ground
V
L
I/O Spike<200mV, p-pV
Output Leakage–1.0+1.0µAV
= 0 V, VL = 0 V
H
= –2 V to +6 V
OUT
Output Capacitance18pFDriver Inhibited
PSRR, Drive Mode35dBVS = V
± 3%
S
POWER SUPPLIES
Total Supply Range16V
Positive Supply+10V
Negative Supply–6V
Positive Supply Current8595mA
Negative Supply Current8898mA
Total Power Dissipation1.371.54W
Temperature Sensor Gain Factor1.0µA/KR
NOTES
Connecting or shorting the decoupling capacitors to ground will result in the destruction of the device.
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Absolute maximum limits apply
individually, not in combination. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
2
Output short circuit protection is guaranteed as long as proper heat sinking is
employed to ensure compliance with the operating temperature limits.
3
The V
dc-current drive capability.
4
To ensure lead coplanarity (±0.002 inches) and solderability, handling with bare
hands should be avoided and the device should be stored in environments at 24°C± 5°C (75°F ± 10°F) with relative humidity not to exceed 65%.
HDCPL
and V
capacitors may be replaced by a low value resistor for higher
LDCPL
4
. . . . . . . . . . +260°C
V
OUT
V
= (MAX) = +7V
OUT
7
6
5
4
3
2
1
, V
V
H
–2
V
= (MIN) = –3V
OUT
FIGURE 1 SHOWS THE MAXIMUM ALLOWABLE LIMITS FOR V
OF V
AND V
HIGH
LIMITS, AS STATED BEFORE, ARE MAXIMUM RATINGS ONLY, AND SHOULD NOT
BE USED AS THE PART'S NORMAL OPERATING RANGE. THIS RANGE APPLIES
ONLY TO SUPPLIES OF +VS = +10V AND –VS = –6V AND SHOULD BE DERATED
PROPORTIONALLY FOR LOWER SUPPLIES.
WHEN THE DRIVER IS OPERATING IN INHIBIT MODE. THE
LOW
2345
–1
–2
–3
V
HIGH
/ V
6
OUT
LOW
1
–1
Figure 1. Absolute Maximum Ratings for V
L
AS A FUNCTION
OUT
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD53500 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. 0
–3–
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