4 packages per bus
100-year typical data retention at 55°C
Wide operating temperature −40°C
3 V to 5 V single supply
APPLICATIONS
LCD panel V
LCD panel brightness and contrast control
Mechanical potentiometer replacement in new designs
Programmable power supplies
RF amplifier biasing
Automotive electronics adjustment
Gain control and offset adjustment
Fiber to the home systems
Electronics level settings
adjustment
COM
GENERAL DESCRIPTION
to +125°C
256-Position, Digital Potentiometer
FUNCTIONAL BLOCK DIAGRAMS
Figure 1. Block Diagram
Figure 2. Block Diagram Showing Level Shifters
CONNECTION DIAGRAM
The AD5259 provides a compact, nonvolatile LFCSP-10
(3 mm × 3 mm) or MSOP-10 (3 mm × 4.9 mm) packaged
solution for 256-position adjustment applications. These
devices perform the same electronic adjustment function
as mechanical potentiometers
1
or variable resistors, but
with enhanced resolution and solid-state reliability.
The wiper settings are controllable through an I
digital interface that is also used to read back the wiper register
and EEPROM content. Resistor tolerance is also stored within
EEPROM, providing an end-to-end tolerance accuracy of 0.1%.
A separate V
users who need multiple parts on one bus, Address Bit AD0 and
Address Bit AD1 allow up to four devices on the same bus.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change with out notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
pin delivers increased interface flexibilit y. For
LOG IC
2
C-compatible
Figure 3. Pinout
1
The terms digital potentiometer, VR (variable resistor), and RDAC are used
50 kΩ/100 kΩ −0.5 ±0.2 +0.5
Integral Nonlinearity INL LSB
5 kΩ –1 ±0.2 +1
10 kΩ −0.5 ±0.1 +0.5
50 kΩ/100 kΩ −0.5 ±0.1 +0.5
Full-Scale Error V
5 kΩ −7 −3 0
10 kΩ −4 −1.5 0
50 kΩ/100 kΩ −1 −0.4 0
= 5 V ± 10% or 3 V ± 10%; VA = VDD; VB = 0 V; −40°C < TA < +125°C, unless otherwise noted.
LOGIC
Code = 0x00/0x80 500/15 ppm/°C
(R
x ΔT)
Code = 0xFF LSB
5 kΩ −40°C < TA < +85°C 0 2.5 4 LSB
+85°C < TA < +125°C 6 LSB
10 kΩ −40°C < TA < +85°C 0 1 3 LSB
+85°C < TA < +125°C 4 LSB
Voltage Divider Temperature
Coefficient
Voltage Range V
Capacitance A, B C
Capacitance W CW f = 1 MHz, measured to GND,
(∆VW x 106)/
(V
x ∆T)
Code = 0x00/0x80 60/5 ppm/°C
GND VDD V
f = 1 MHz, measured to GND,
A, B
45 pF
code = 0x80
60 pF
code = 0x80
Rev. C | Page 3 of 24
AD5259 Data Sheet
SDA, AD0, AD1
VIN = 0 V or 5 V
0.01
±1
DD
LOGIC
LOGIC
−40°C < TA < +85°C
3 6
µA
LOGIC(PROG)
DISS
B
N_WB
Parameter Symbol Conditions Min Typ1 Max Unit
DIGITAL INPUTS AND OUTPUTS
Input Logic High VIH 0.7 × VL VL + 0.5 V
Input Logic Low VIL −0.5 0.3 × VL V
Leakage Current IIL µA
SCL – Logic High VIN = 0 V −2.5 −1.3 +1
SCL – Logic Low VIN = 5 V 0.01 ±1
Input Capacitance CIL 5 pF
POWER SUPPLIES
Power Supply Range V
Positive Supply Current IDD 0.1 2 µA
Logic Supply V
Logic Supply Current I
+85°C < TA < +125°C 9 µA
Programming Mode Current (EEPROM) I
Power Dissipation P
Power Supply Rejection Ratio PSRR VDD = +5 V ± 10%, code = 0x80 ±0.005 ±0.06 %/%
Total Harmonic Distortion THDW RAB = 10 kΩ, VA = 1 V rms,
VW Settling Time tS RAB = 10 kΩ, VAB = 5 V,
Resistor Noise Voltage Density e
1
Typical values represent average readings at 25°C and VDD = 5 V.
2.7 5.5 V
2.7 5.5 V
VIH = 5 V or VIL = 0 V
VIH = 5 V or VIL = 0 V 35 mA
VIH = 5 V or VIL = 0 V, VDD = 5 V 15 40 µW
0.01 %
V
= 0, f = 1 kHz
500 ns
±1 LSB error band
RWB = 5 kΩ, f = 1 kHz 9 nV/√Hz
Rev. C | Page 4 of 24
Data Sheet AD5259
TIMING CHARACTERISTICS
VDD = V
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
I2C INTERFACE TIMING
CHARACTERISTICS
SCL Clock Frequency f
t
BUF
and Start
t
HD;STA
t
LOW
t
HIGH
t
SU;STA
Start Condition
t
HD;DAT
t
SU;DAT
tF Fall Time of Both SDA and
SCL Signals
tR Rise Time of Both SDA and
SCL Signals
t
SU;STO
EEPROM Data Storing Time t
EEPROM Data Restoring Time at
Power On
EEPROM Data Restoring Time upon
Restore Command
EEPROM Data Rewritable Time3 t
FLASH/EE MEMORY RELIABILITY
Endurance4 100 700 kCycles
Data Retention5 100 Years
1
Standard I2C mode operation guaranteed by design.
2
During power-up, the output is momentarily preset to midscale before restoring EEPROM content.
3
Delay time after power-on PRESET prior to writing new EEPROM data.
4
Endurance is qualified to 100,000 cycles per JEDEC Std. 22 method A117, and is measured at –40°C, +25°C, and +125°C; typical endurance at +25°C is 700,000 cycles.
5
Retention lifetime equivalent at junction temperature (TJ) = 55°C per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6 eV derates
with junction temperature.
= 5 V ± 10% or 3 V ± 10%; VA = VDD; VB = 0 V; −40°C < TA < +125°C, unless otherwise noted.
LOGIC
1
Bus Free Time Between Stop
Hold Time (Repeated Start) t2
0 400 kHz
SCL
1.3 μs
t
1
After this period, the first clock pulse is
0.6 μs
generated.
Low Period of SCL Clock t3 1.3 μs
High Period of SCL Clock t4 0.6 μs
t
Setup Time for Repeated
0.6 μs
5
Data Hold Time t6 0 0.9 μs
Data Setup Time t7 100 ns
300 ns
t
8
300 ns
t
9
Setup Time for Stop Condition t10 0.6 μs
EEMEM_STORE
t
2
2
EEMEM_RESTORE1
t
EEMEM_RESTORE2 VDD
EEMEM_REWRITE
26 ms
rise time dependent. Measure without
V
DD
decoupling capacitors at V
DD
and GND.
300 μs
= 5 V. 300 μs
540 μs
t
2
t
5
10
05026-004
P
SCL
SDA
t
8
t
t
1
PSS
t
2
3
t
8
t
9
t
6
Figure 4. I
t
9
t
4
2
C Interface Timing Diagram
t
7
t
Rev. C | Page 5 of 24
AD5259 Data Sheet
MAX
JMAX
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Value
VDD, V
VA, VB, VW to GND
I
to GND
LOGIC
−0.3 V to +7 V
GND − 0.3 V, VDD + 0.3 V
Pulsed1 ±20 mA
Continuous ±5 mA
Digital Inputs and Output Voltage
0 V to 7 V
to GND
Operating Temperature Range
Maximum Junction Temperature
(T
)
Storage Temperature
Lead Temperature
−40°C to +125°C
150°C
−65°C to +150°C
300°C
(Soldering, 10 sec)
Thermal Resistance2
θ
: MSOP–10
JA
1
Maximum terminal current is bounded by the maximum current handling
of the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
2
Package power dissipation = (T
– TA)/θJA.
JMAX
200°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. C | Page 6 of 24
Data SheetAD5259
05026-002
AD5259
TOP VIEW
(Not to Scale)
W
1
AD0
2
AD1
3
SDA
4
SCL
5
A
B
V
DD
GND
V
LOGIC
10
9
8
7
6
NOTES
1. THE EXPOSED PAD SHOULD
BE CONNECTED T O GND OR
LEFT FLOATING.
4
SDA
Serial Data Input/Output.
LOGIC
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 5. Pin Configuration
Table 4. Pin Function Descriptions
Pin Mnemonic Description
1 W W Terminal, GND ≤ VW ≤ VDD.
2 ADO Programmable Pin 0 for Multiple Package Decoding. State is registered on power-up.
3 AD1 Programmable Pin 1 for Multiple Package Decoding. State is registered on power-up.
5 SCL Serial Clock Input. Positive edge triggered.
6 V
7 GND Digital Ground.
8 VDD Positive Power Supply.
9 B B Terminal, GND ≤ VB ≤ VDD.
10 A A Terminal, GND ≤ VA ≤ VDD.
11 EPAD Exposed Pad. The exposed pad should be connected to GND or left floating.