4 packages per bus
100-year typical data retention at 55°C
Wide operating temperature −40°C
3 V to 5 V single supply
APPLICATIONS
LCD panel V
LCD panel brightness and contrast control
Mechanical potentiometer replacement in new designs
Programmable power supplies
RF amplifier biasing
Automotive electronics adjustment
Gain control and offset adjustment
Fiber to the home systems
Electronics level settings
adjustment
COM
GENERAL DESCRIPTION
to +125°C
256-Position, Digital Potentiometer
FUNCTIONAL BLOCK DIAGRAMS
Figure 1. Block Diagram
Figure 2. Block Diagram Showing Level Shifters
CONNECTION DIAGRAM
The AD5259 provides a compact, nonvolatile LFCSP-10
(3 mm × 3 mm) or MSOP-10 (3 mm × 4.9 mm) packaged
solution for 256-position adjustment applications. These
devices perform the same electronic adjustment function
as mechanical potentiometers
1
or variable resistors, but
with enhanced resolution and solid-state reliability.
The wiper settings are controllable through an I
digital interface that is also used to read back the wiper register
and EEPROM content. Resistor tolerance is also stored within
EEPROM, providing an end-to-end tolerance accuracy of 0.1%.
A separate V
users who need multiple parts on one bus, Address Bit AD0 and
Address Bit AD1 allow up to four devices on the same bus.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change with out notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
pin delivers increased interface flexibilit y. For
LOG IC
2
C-compatible
Figure 3. Pinout
1
The terms digital potentiometer, VR (variable resistor), and RDAC are used
50 kΩ/100 kΩ −0.5 ±0.2 +0.5
Integral Nonlinearity INL LSB
5 kΩ –1 ±0.2 +1
10 kΩ −0.5 ±0.1 +0.5
50 kΩ/100 kΩ −0.5 ±0.1 +0.5
Full-Scale Error V
5 kΩ −7 −3 0
10 kΩ −4 −1.5 0
50 kΩ/100 kΩ −1 −0.4 0
= 5 V ± 10% or 3 V ± 10%; VA = VDD; VB = 0 V; −40°C < TA < +125°C, unless otherwise noted.
LOGIC
Code = 0x00/0x80 500/15 ppm/°C
(R
x ΔT)
Code = 0xFF LSB
5 kΩ −40°C < TA < +85°C 0 2.5 4 LSB
+85°C < TA < +125°C 6 LSB
10 kΩ −40°C < TA < +85°C 0 1 3 LSB
+85°C < TA < +125°C 4 LSB
Voltage Divider Temperature
Coefficient
Voltage Range V
Capacitance A, B C
Capacitance W CW f = 1 MHz, measured to GND,
(∆VW x 106)/
(V
x ∆T)
Code = 0x00/0x80 60/5 ppm/°C
GND VDD V
f = 1 MHz, measured to GND,
A, B
45 pF
code = 0x80
60 pF
code = 0x80
Rev. C | Page 3 of 24
AD5259 Data Sheet
SDA, AD0, AD1
VIN = 0 V or 5 V
0.01
±1
DD
LOGIC
LOGIC
−40°C < TA < +85°C
3 6
µA
LOGIC(PROG)
DISS
B
N_WB
Parameter Symbol Conditions Min Typ1 Max Unit
DIGITAL INPUTS AND OUTPUTS
Input Logic High VIH 0.7 × VL VL + 0.5 V
Input Logic Low VIL −0.5 0.3 × VL V
Leakage Current IIL µA
SCL – Logic High VIN = 0 V −2.5 −1.3 +1
SCL – Logic Low VIN = 5 V 0.01 ±1
Input Capacitance CIL 5 pF
POWER SUPPLIES
Power Supply Range V
Positive Supply Current IDD 0.1 2 µA
Logic Supply V
Logic Supply Current I
+85°C < TA < +125°C 9 µA
Programming Mode Current (EEPROM) I
Power Dissipation P
Power Supply Rejection Ratio PSRR VDD = +5 V ± 10%, code = 0x80 ±0.005 ±0.06 %/%
Total Harmonic Distortion THDW RAB = 10 kΩ, VA = 1 V rms,
VW Settling Time tS RAB = 10 kΩ, VAB = 5 V,
Resistor Noise Voltage Density e
1
Typical values represent average readings at 25°C and VDD = 5 V.
2.7 5.5 V
2.7 5.5 V
VIH = 5 V or VIL = 0 V
VIH = 5 V or VIL = 0 V 35 mA
VIH = 5 V or VIL = 0 V, VDD = 5 V 15 40 µW
0.01 %
V
= 0, f = 1 kHz
500 ns
±1 LSB error band
RWB = 5 kΩ, f = 1 kHz 9 nV/√Hz
Rev. C | Page 4 of 24
Data Sheet AD5259
TIMING CHARACTERISTICS
VDD = V
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
I2C INTERFACE TIMING
CHARACTERISTICS
SCL Clock Frequency f
t
BUF
and Start
t
HD;STA
t
LOW
t
HIGH
t
SU;STA
Start Condition
t
HD;DAT
t
SU;DAT
tF Fall Time of Both SDA and
SCL Signals
tR Rise Time of Both SDA and
SCL Signals
t
SU;STO
EEPROM Data Storing Time t
EEPROM Data Restoring Time at
Power On
EEPROM Data Restoring Time upon
Restore Command
EEPROM Data Rewritable Time3 t
FLASH/EE MEMORY RELIABILITY
Endurance4 100 700 kCycles
Data Retention5 100 Years
1
Standard I2C mode operation guaranteed by design.
2
During power-up, the output is momentarily preset to midscale before restoring EEPROM content.
3
Delay time after power-on PRESET prior to writing new EEPROM data.
4
Endurance is qualified to 100,000 cycles per JEDEC Std. 22 method A117, and is measured at –40°C, +25°C, and +125°C; typical endurance at +25°C is 700,000 cycles.
5
Retention lifetime equivalent at junction temperature (TJ) = 55°C per JEDEC Std. 22, Method A117. Retention lifetime based on an activation energy of 0.6 eV derates
with junction temperature.
= 5 V ± 10% or 3 V ± 10%; VA = VDD; VB = 0 V; −40°C < TA < +125°C, unless otherwise noted.
LOGIC
1
Bus Free Time Between Stop
Hold Time (Repeated Start) t2
0 400 kHz
SCL
1.3 μs
t
1
After this period, the first clock pulse is
0.6 μs
generated.
Low Period of SCL Clock t3 1.3 μs
High Period of SCL Clock t4 0.6 μs
t
Setup Time for Repeated
0.6 μs
5
Data Hold Time t6 0 0.9 μs
Data Setup Time t7 100 ns
300 ns
t
8
300 ns
t
9
Setup Time for Stop Condition t10 0.6 μs
EEMEM_STORE
t
2
2
EEMEM_RESTORE1
t
EEMEM_RESTORE2 VDD
EEMEM_REWRITE
26 ms
rise time dependent. Measure without
V
DD
decoupling capacitors at V
DD
and GND.
300 μs
= 5 V. 300 μs
540 μs
t
2
t
5
10
05026-004
P
SCL
SDA
t
8
t
t
1
PSS
t
2
3
t
8
t
9
t
6
Figure 4. I
t
9
t
4
2
C Interface Timing Diagram
t
7
t
Rev. C | Page 5 of 24
AD5259 Data Sheet
MAX
JMAX
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Value
VDD, V
VA, VB, VW to GND
I
to GND
LOGIC
−0.3 V to +7 V
GND − 0.3 V, VDD + 0.3 V
Pulsed1 ±20 mA
Continuous ±5 mA
Digital Inputs and Output Voltage
0 V to 7 V
to GND
Operating Temperature Range
Maximum Junction Temperature
(T
)
Storage Temperature
Lead Temperature
−40°C to +125°C
150°C
−65°C to +150°C
300°C
(Soldering, 10 sec)
Thermal Resistance2
θ
: MSOP–10
JA
1
Maximum terminal current is bounded by the maximum current handling
of the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
2
Package power dissipation = (T
– TA)/θJA.
JMAX
200°C/W
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Rev. C | Page 6 of 24
Data SheetAD5259
05026-002
AD5259
TOP VIEW
(Not to Scale)
W
1
AD0
2
AD1
3
SDA
4
SCL
5
A
B
V
DD
GND
V
LOGIC
10
9
8
7
6
NOTES
1. THE EXPOSED PAD SHOULD
BE CONNECTED T O GND OR
LEFT FLOATING.
4
SDA
Serial Data Input/Output.
LOGIC
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 5. Pin Configuration
Table 4. Pin Function Descriptions
Pin Mnemonic Description
1 W W Terminal, GND ≤ VW ≤ VDD.
2 ADO Programmable Pin 0 for Multiple Package Decoding. State is registered on power-up.
3 AD1 Programmable Pin 1 for Multiple Package Decoding. State is registered on power-up.
5 SCL Serial Clock Input. Positive edge triggered.
6 V
7 GND Digital Ground.
8 VDD Positive Power Supply.
9 B B Terminal, GND ≤ VB ≤ VDD.
10 A A Terminal, GND ≤ VA ≤ VDD.
11 EPAD Exposed Pad. The exposed pad should be connected to GND or left floating.
Figure 17. Logic Supply Current vs. Temperature vs. V
DD
Rev. C | Page 9 of 24
AD5259 Data Sheet
400
–600
–500
–400
–
300
–
200
–100
0
100
200
300
0256224
192
160
128
966432
05026-019
CODE (Decimal)
RHEOSTAT MODE TEMPCO (ppm/°C)
5kΩ
10k
Ω
50kΩ
100k
Ω
70
–40
–30
–20
–
10
0
10
20
30
40
50
60
0
256224192
1601289664
32
05026-018
CODE (Decimal)
POTENTIOMETER MODE TEMPCO (ppm/°C)
10kΩ
50kΩ
5kΩ
100kΩ
350
0
50
100
150
200
250
300
–40–20806040200
05026-022
TEMPERATURE (°C)
R
WB
@ 0x00
RWB @ VDD = 5.5V
R
WB
@ VDD = 2.7V
120
100
80
60
40
20
0
–40–2080
60
4020
0
05026-025
TEMPERATURE (°
C)
TOTAL RESISTANCE (kΩ)
100kΩ Rt @ V
DD
= 5.5V
50kΩ Rt @ VDD = 5.5V
10k
Ω Rt @ V
DD
= 5.5V
5k
Ω Rt @ VDD = 5.5V
05026-026
80
H
40
H
20
H
10
H
08
H
04
H
02
H
01
H
1k10M
1M100k10k
–60
–54
–48
–42
–
36
–30
–24
–18
–12
–
6
0
FREQUENCY (Hz)
GAIN (dB)
1k10M1M100k10k
05026-027
80
H
40
H
20
H
10
H
08
H
04
H
02
H
01
H
–60
–54
–48
–42
–36
–30
–24
–18
–12
–6
0
FREQUENCY (Hz)
GAIN (dB)
Figure 18. Rheostat Mode Tempco (ΔR
AB
Figure 19. Potentiometer Mode Tempco (ΔV
x 106)/(RAB x ΔT) vs. Code
x 106)/(VW x ΔT) vs. Code
W
Figure 21. Total Resistance vs. Temperature
Figure 22. Gain vs. Frequency vs. Code, R
= 5 kΩ
AB
Figure 20. R
WB
vs. Temperature
Rev. C | Page 10 of 24
Figure 23. Gain vs. Frequency vs. Code, R
= 10 kΩ
AB
Data Sheet AD5259
0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k1M100k10k
80
H
40
H
20
H
10
H
08
H
04
H
02
H
01
H
FREQUENCY (Hz)
Figure 24. Gain vs. Frequency vs. Code, R
= 50 kΩ
AB
05026-028
10k
= V
LOGIC
VIH (V)
VDD = V
= 3V
1k
(A)
LOGIC
I
100
10
012345
V
DD
LOGIC
= 5V
Figure 27. Logic Supply Current vs. Input Voltage
05026-055
0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k1M100k10k
80
H
40
H
20
H
10
H
08
H
04
H
02
H
01
H
FREQUENCY (Hz)
Figure 25. Gain vs. Frequency vs. Code, R
0
–6
–12
–18
–24
–30
GAIN (dB)
–36
–42
–48
–54
–60
1k10M1M100k10k
100k
80kHz
FREQUENCY (Hz)
Figure 26. −3 dB Bandwidth @ Code = 0×80
50k
160kHz
10k
800kHz
= 100 kΩ
AB
5k
2MHz
05026-029
05026-050
80
CODE = MIDSCALE, VA = V
60
40
PSRR @ V
PSRR (dB)
20
0
1001k1M100k10k
PSRR @ V
= 3V DC 10% p-p AC
LOGIC
Figure 28. PSRR v s. Frequency
V
200mV/DIV
1
2
5V/DIV
W
SCL
Figure 29. Digital Feedthrough
, VB = 0V
LOGIC
= 5V DC 10% p-p AC
LOGIC
FREQUENCY (Hz)
400ns/DIV
05026-054
05026-051
Rev. C | Page 11 of 24
AD5259 Data Sheet
05026-052
1
V
W
1
µ
s/DIV
50mV/DIV
05026-053
1
2
V
W
SCL
2V/DIV
200ns/DIV
5V/DIV
Figure 30. Midscale Glitch, Code 0×7F to 0×80
Figure 31. Large Signal Settling Time
Rev. C | Page 12 of 24
Data SheetAD5259
05026-030
V
MS
A
W
B
DUT
V+
V+ = V
DD
1LSB = V+/2
N
05026-031
NO CONNECT
I
W
V
MS
A
W
B
DUT
05026-032
V
MS2
V
MS1
V
W
A
W
B
DUT
I
W
= VDD/R
NOMINAL
R
W
= [V
MS1
– V
MS2
]/I
W
05026-033
∆VMS%
DUT
( )
A
W
B
V+
∆VDD%
∆V
MS
∆V
DD
∆V
DD
V
A
V
MS
V+ = V
DD
±
10%
PSRR (dB) = 20 LOG
PSS (%/%) =
05026-034
+5V
–5V
W
A
+2.5V
B
V
OUT
OFFSET
GND
DUT
AD8610
V
IN
05026-035
W
B
DUT
I
SW
I
SW
R
SW
GND TO V
DD
CODE = 0x00
=
0.1V
0.1V
TEST CIRCUITS
Figure 32 through Figure 37 illustrate the test circuits that define the test conditions used in the product Specifications tables.
Figure 32. Test Circuit for Potentiometer Divider Nonlinearity Error (INL, DNL)
Figure 33. Test Circuit for Resistor Position Nonlinearity Error
(Rheostat Operation; R-INL, R-DNL)
Figure 34. Test Circuit for Wiper Resistance
Figure 35. Test Circuit for Power Supply Sensitivity (PSS, PSSR)
Figure 36. Test Circuit for Gain vs. Frequency
Figure 37. Test Circuit for Common-Mode Leakage Current
Rev. C | Page 13 of 24
AD5259 Data Sheet
A
W
B
A
W
B
A
W
B
05026-036
W
AB
WB
RR
D
DR×+×=2
256
)(
D5
D4
D3
D7
D6
D2
D1
D0
RDAC
LATCH
AND
DECODER
R
S
R
S
R
S
R
S
A
W
B
05026-037
W
ABWA
RR
D
DR×+×
−
=2
256
256
)(
A
V
I
W
B
V
O
05026-038
B
A
W
V
D
V
D
DV
256
256
256
)
(
−
+=
B
AB
WA
A
AB
WB
W
V
R
DR
V
R
DR
DV
)(
)(
)
(+=
THEORY OF OPERATION
The AD5259 is a 256-position digitally-controlled variable
resistor (VR) device. EEPROM is pre-loaded at midscale from
the factory, and initial power-up is, accordingly, at midscale.
PROGRAMMING THE VARIABLE RESISTOR
Rheostat Operation
The nominal resistance (RAB) of the RDAC between Terminal A
and Terminal B is available in 5 kΩ, 10 kΩ, 50 kΩ, and 100 kΩ.
The nominal resistance of the VR has 256 contact points accessed
by the wiper terminal. The 8-bit data in the RDAC latch is
decoded to select one of 256 possible settings.
Figure 38. Rheostat Mode Configuration
The general equation determining the digitally programmed
output resistance between Wiper W and Terminal B is
(1)
Similar to the mechanical potentiometer, the resistance of the
RDAC between Wiper W and Terminal A produces a digitally
controlled complementary resistance, R
setting for R
starts at a maximum value of resistance and
WA
. The resistance value
WA
decreases as the data loaded in the latch increases in value.
The general equation for this operation is
(2)
Typical device-to-device matching is process lot dependent and
may vary by up to ±30%. For this reason, resistance tolerance is
stored in the EEPROM, enabling the user to know the actual
R
within 0.1%.
AB
PROGRAMMING THE POTENTIOMETER DIVIDER
Voltage Output Operation
The digital potentiometer easily generates a voltage divider at
Wiper W to Terminal B and Wiper W to Terminal A proportional to the input voltage at Terminal A to Terminal B. Unlike
the polarity of V
across Terminal A to Terminal B, Wiper W to Terminal A, and
Wiper W to Terminal B can be at either polarity.
to GND, which must be positive, voltage
DD
where:
D is the decimal equivalent of the binary code loaded in the
8-bit RDAC register.
R
is the end-to-end resistance.
AB
R
is the wiper resistance contributed by the ON resistance of
W
each internal switch.
In the zero-scale condition, there is a relatively low value finite
wiper resistance. Care should be taken to limit the current flow
between Wiper W and Terminal B in this state to a maximum
pulse current of no more than 20 mA. Otherwise, degradation
or destruction of the internal switch contact can occur.
Figure 40. Potentiometer Mode Configuration
If ignoring the effect of the wiper resistance for approximation,
connecting the A terminal to 5 V and the B terminal to ground
produces an output voltage at Wiper W to Terminal B starting
at 0 V up to 1 LSB less than 5 V. The general equation defining
the output voltage at V
with respect to ground for any valid
W
input voltage applied to Terminal A and Terminal B is
(3)
A more accurate calculation, which includes the effect of wiper
resistance, V
Figure 39. AD5259 Equivalent RDAC Circuit
Operation of the digital potentiometer in the divider mode
results in a more accurate operation over temperature. Unlike
the rheostat mode, the output voltage is dependent mainly
on the ratio of the Internal Resistors R
Rev. C | Page 14 of 24
the absolute values.
, is
W
(4)
and RWB and not
WA
Data SheetAD5259
I2C-COMPATIBLE INTERFACE
The master initiates data transfer by establishing a start condition, which is when a high-to-low transition on the SDA line
occurs while SCL is high (see Figure 4). The next byte is the
slave address byte, which consists of the slave address (first
7 bits) followed by an R/
is high, the master reads from the slave device. When the R/
bit is low, the master writes to the slave device.
The slave address of the part is determined by two configurable
address pins, Pin AD0 and Pin AD1. The state of these two pins
is registered upon power-up and decoded into a corresponding
2
I
C 7-bit address (see Table 5). The slave address corresponding
to the transmitted address bits responds by pulling the SDA
line low during the ninth clock pulse (this is termed the slave
acknowledge bit). At this stage, all other devices on the bus
remain idle while the selected device waits for data to be
written to, or read from, its serial register.
bit (see Tabl e 6). When the R/W bit
W
W
WRITING
In the write mode, the last bit (R/W) of the slave address byte is
logic low. The second byte is the instruction byte. The first three
bits of the instruction byte are the command bits (see Table 6).
The user must choose whether to write to the RDAC register,
EEPROM register, or activate the software write protect (see
Tabl e 7 to Ta ble 10). The final five bits are all zeros (see Tab le 13
to Tabl e 14). The slave again responds by pulling the SDA line
low during the ninth clock pulse.
The final byte is the data byte MSB first. With the write protect
mode, data is not stored; rather, a logic high in the LSB enables
write protect. Likewise, a logic low disables write protect. The
slave again responds by pulling the SDA line low during the
ninth clock pulse.
STORING/RESTORING
In this mode, only the address and instruction bytes are
necessary. The last bit (R/
low. The first three bits of the instruction byte are the
command bits (see Tabl e 6). The two choices are transfer
data from RDAC to EEPROM (store), or from EEPROM
to RDAC (restore). The final five bits are all zeros (see
Tabl e 13 to Table 14). In addition, users should issue an
NOP command immediately after restoring the EEMEM
setting to RDAC, thereby minimizing supply current
dissipation.
) of the address byte is logic
W
READING
Assuming the register of interest was not just written to, it is
necessary to write a dummy address and instruction byte. The
instruction byte will vary depending on whether the data that
is wanted is the RDAC register, EEPROM register, or tolerance
register (see Table 11 and Tabl e 16).
After the dummy address and instruction bytes are sent, a repeat
start is necessary. After the repeat start, another address byte is
needed, except this time the R/
address byte is the readback byte containing the information
requested in the instruction byte. Read bits appear on the negative edges of the clock.
The tolerance register can be read back individually (see
Tabl e 15) or consecutively (see Tab le 16). Refer to the Read
Modes section for detailed information on the interpretation
of the tolerance bytes.
After all data bits have been read or written, a stop condition is
established by the master. A stop condition is defined as a low-tohigh transition on the SDA line while SCL is high. In write mode,
the master pulls the SDA line high during the tenth clock pulse
to establish a stop condition (see Figure 46). In read mode, the
master issues a no acknowledge for the ninth clock pulse (that is,
the SDA line remains high). The master then brings the SDA line
low before the tenth clock pulse, and then raises SDA high to
establish a stop condition (see Figure 47).
A repeated write function gives the user flexibility to update the
RDAC output a number of times after addressing and instructing
the part only once. For example, after the RDAC has acknowledged its slave address and instruction bytes in the write mode,
the RDAC output is updated on each successive byte until a stop
condition is received. If different instructions are needed, the
write/read mode has to start again with a new slave address,
instruction, and data byte. Similarly, a repeated read function
of the RDAC is also allowed.
bit is logic high. Following this
W
Rev. C | Page 15 of 24
AD5259 Data Sheet
AD0 Address Pin
I
2
C Device Address
C2
C1
C0
Command Description
I2C-COMPATIBLE FORMAT
The following generic, write, read, and store/restore control
registers for the AD5259 all refer to the device addresses listed
in Table 5; the mode/condition reference key (S, P, SA, MA,
W
NA,
, R, and X) is listed below.
S = Start Condition
P = Stop Condition
SA = Slave Acknowledge
MA = Master Acknowledge
NA = No Acknowledge
W
= Writ e
R = Read
X = Don’t Care
GENERIC INTERFACE
Table 6. Generic Interface Format
7-Bit Device Address
S
(See Table 5)
Slave Address Byte Instruction Byte Data Byte
R/W
SA C2 C1 C0 A4 A3 A2 A1 A0 SA D7 D6 D5 D4 D3 D2 D1 D0 SA P
0 0 0 Operation Between Interface and RDAC.
0 0 1 Operation Between Interface and EEPROM.
0 1 0 Operation Between Interface and Write Protection Register. See Table 10.
1 0 0 NOP.
1 0 1 Restore EEPROM to RDAC.1
1 1 0 Store RDAC to EEPROM.
1
This command leaves the device in the EEMEM read power state, which consumes power. Issue the NOP command to return the device to its idle state.
WRITE MODES
Table 8. Writing to RDAC Register
7-Bit Device Address
S
(See Table 5) 0 SA 0 0 0 0 0 0 0 0 SA D7 D6 D5 D4 D3 D2 D1 D0 SA P
Slave Address Byte Instruction Byte Data Byte
Table 9. Writing to EEPROM Register
7-Bit Device Address
S
(See Table 5) 0 SA 0 0 1 0 0 0 0 0 SA D7 D6 D5 D4 D3 D2 D1 D0 SA P
(See Table 5) 0 SA 0 1 0 0 0 0 0 0 SA 0 0 0 0 0 0 0 WP SA P
Slave Address Byte Instruction Byte Data Byte
In order to activate the write protection mode, the WP bit in Table 10 must be logic high. To deactivate the write protection, the
command must be sent again, except with the WP in logic zero state. WP is reset to the deactivated mode if power is cycled off and on.
Rev. C | Page 16 of 24
Data SheetAD5259
0
READ MODES
Read modes are referred to as traditional because the first two bytes for all three cases are dummy bytes, which function to place the
pointer towards the correct register; this is the reason for the repeat start. Theoretically, this step can be avoided if the user reads a register
previously written to. For example, if the EEPROM was just written to, the user can then skip the two dummy bytes and proceed directly
to the slave address byte, followed by the EEPROM readback data.
Table 11. Traditional Readback of RDAC Register Value
7-Bit Device Address
S
(See Table 5)
Slave Address Byte Instruction Byte Slave Address Byte Read Back Data
↑
Repeat start
0 SA 0 0 0 0 0 0 0 0 SA S
Table 12. Traditional Readback of Stored EEPROM Value
7-Bit Device Address
S
(See Table 5)
Slave Address Byte Instruction Byte Slave Address Byte Read Back Data ↑
Repeat start
0 SA 0 0 1 0 0 0 0 0 SA S
STORE/RESTORE MODES
Table 13. Storing RDAC Value to EEPROM
7-Bit Device Address
S
(See Table 5) 0 SA 1 1 0 0 0 0 0 0 SA P
Slave Address Byte Instruction Byte
7-Bit Device Address
(See Table 5)
7-Bit Device Address
(See Table 5)
1 SA D7 D6 D5 D4 D3 D2 D1 D0 NA P
1 SA D7 D6 D5 D4 D3 D2 D1 D0 NA P
Table 14. Restoring EEPROM to RDAC1
7-Bit Device Address
S
(See Table 5) 0 SA 1
Slave Address Byte Instruction Byte
1
User should issue an NOP command immediately after this command to conserve power.
1 0 0 0 0 0 SA P
Rev. C | Page 17 of 24
AD5259 Data Sheet
↑
↑
Repeat start
S
(See Table 5)
0
SA 0 0 1 1 1 1 1 0
SA
S
(See Table 5)
1
SA
D7
D6
D5
D4
D3
D2
D1
D0
MA
D7
D6
D5
D4
D3
D2
D1
D0
NA
P
↑
05026-005
AAA
D7D6D5D4D3D2D1D0
SIGN
SIGN
7 BITS FOR INTEGER NUMBER
26252423222
120
D7D6D5
D4D3D2D1D0
8 BITS FOR DECIMAL NUMBER
2
–8
2–12–22–32–42–52–62
–7
TOLERANCE READBACK MODES
Table 15. Traditional Readback of Tolerance (Individually)
Table 16.Traditional Readback of Tolerance (Consecutively)
7-Bit Device
Address
7-Bit Device
Address
7-Bit Device Address
(See Table 5) 1 SA D7 D6 D5 D4 D3 D2 D1 D0 NA P
7-Bit Device Address
(See Table 5) 1 SA D7 D6 D5 D4 D3 D2 D1 D0 NA P
Slave Address
Byte
Instruction Byte
Slave Address
Byte
Sign + Integer Byte Decimal Byte
Repeat start
Calculating RAB Tolerance Stored in Read-Only Memory
Figure 41. Format of Stored Tolerance in Sign Magnitude Format with Bit Position Descriptions.
The AD5259 features a patented RAB tolerance storage in the
nonvolatile memory. The tolerance is stored in the memory
during factory production and can be read by users at any time.
The knowledge of stored tolerance allows users to accurately
calculate R
. This feature is valuable for precision, rheostat
AB
mode, and open-loop applications where knowledge of absolute resistance is critical.
(Unit is Percent. Only Data Bytes are Shown.)
In the first memory location, the MSB is designated for the
sign (0 = + and 1= −) and the seven LSBs are designated for
the integer portion of the tolerance. In the second memory
location, all eight data bits are designated for the decimal
portion of tolerance. Note the decimal portion has a limited
accuracy of only 0.1%. For example, if the rated R
and the data readback from Address 11110 shows 0001 1100,
= 10 kΩ
AB
and Address 11111 shows 0000 1111, then the tolerance can
The stored tolerance resides in the read-only memory and is
be calculated as
expressed as a percentage. The tolerance is stored in two memory
location bytes in sign magnitude binary form (see Figure 41).
MSB: 0 = +
Next 7 MSB: 001 1100 = 28
The two EEPROM address bytes are 11110 (sign + integer)
and 11111 (decimal number). The two bytes can be individually accessed with two separate commands (see Table 15).
Alternatively, readback of the first byte followed by the second
8 LSB: 0000 1111 = 15 × 2
Toleranc e = +28.06%
Rounded Tolerance = +28.1% and therefore,
R
AB_ACTUAL
= 12.810 kΩ
–8
= 0.06
byte can be done in one command (see Table 16). In the latter
case, the memory pointer will automatically increment from
the first to the second EEPROM location (increments from
11110 to 11111) if read consecutively.
Rev. C | Page 18 of 24
Data SheetAD5259
GND
A
W
B
V
DD
05026-039
GND
SCL
SDA
V
LOGIC
05026-040
V
DD
GND
V
DD
C2
10µFC10.1µF
AD5259
+
05026-041
05026-042
ESD PROTECTION OF DIGITAL PINS AND
RESISTOR TERMINALS
The AD5259 VDD, V
boundary conditions for proper 3-terminal and digital input
operation. Supply signals present on Terminal A, Terminal B,
and Terminal W that exceed V
internal forward biased ESD protection diodes (see Figure 42).
Digital Input SCL and Digital Input SDA are clamped by ESD
protection diodes with respect to V
Figure 43.
Figure 42. Maximum Terminal Voltages Set by V
, and GND power supplies define the
LOG IC
or GND are clamped by the
DD
and GND as shown in
LOGIC
and GND
DD
LAYOUT AND POWER SUPPLY BYPASSING
It is good practice to use compact, minimum lead length layout
design. The leads to the inputs should be as direct as possible
with minimum conductor length. Ground paths should have
low resistance and low inductance.
Similarly, it is also good practice to bypass the power supplies
with quality capacitors for optimum stability. Supply leads to
the device should be bypassed with disc or chip ceramic capacitors of 0.01 µF to 0.1 µF. Low ESR 1 µF to 10 µF tantalum or
electrolytic capacitors should also be applied at the supplies to
minimize any transient disturbance and low frequency ripple
(see Figure 44). The digital ground should also be joined
remotely to the analog ground at one point to minimize the
ground bounce.
Figure 43. Maximum Terminal Voltages Set by V
and GND
LOGIC
POWER-UP SEQUENCE
Because the ESD protection diodes limit the voltage compliance
at Terminal A, Terminal B, and Terminal W (see Figure 42), it
is important to power GND/V
DD/VLOG IC
voltage to Terminal A, Terminal B, and Terminal W; otherwise,
the diode is forward biased, so the V
unintentionally and may affect the user’s circuit. The ideal powerup sequence is in the following order: GND, V
inputs, and then V
V
, VB, VW, and the digital inputs is not important as long as
A
they are powered after GND/V
, VB, VW. The relative order of powering
A
DD/VLOG IC
before applying any
DD
and V
are powered
LOGIC
, V
DD
LOGIC
.
, digital
Figure 44. Power Supply Bypassing
MULTIPLE DEVICES ON ONE BUS
The AD5259 has two configurable address pins, Pin AD0 and
Pin AD1. The state of these two pins is registered upon powerup and decoded into a corresponding I
2
C-compatible 7-bit
address (see Table 5). This allows up to four devices on the bus
to be written to or read from independently.
EVALUATION BOARD
An evaluation board, with all necessary software, is available
to program the AD5259 from any PC running Windows® 98/
2000/ XP. The graphical user interface, as shown in Figure 45,
is straightforward and easy to use. More detailed information
is available in the board’s user manual.
Figure 45. AD5259 Evaluation Board Software
Rev. C | Page 19 of 24
AD5259 Data Sheet
05026-006
A
B
W
R2
10k
Ω
R1
70kΩ
R3
25kΩ
V
DD
V
LOGIC
SCL
SDA
GND
–
+
U1
AD8565
3.5V < V
COM
< 4.5V
14.4VVCC (~3.3V)5V
AD5259
MCU
C1
1µF
R5
10kΩ
R6
10kΩ
05026-007
A
B
W
R2
10kΩ
R1
70kΩ
R3
25kΩ
V
DD
V
LOGIC
SCL
SDA
GND
–
+
U1
AD8565
3.5V < V
COM
< 4.5V
14.4VVCC (~3.3V)
AD5259
MCU
C1
1µF
R5
10kΩ
R6
10kΩ
SUPPLIES POWER
TO BOTH THE
MICRO AND THE
LOGIC SUPPLY OF
THE DIGITAL POT
DISPLAY APPLICATIONS
CIRCUITRY
A special feature of the AD5259 is its unique separation of the
V
and VDD supply pins. The separation provides greater
LOG IC
flexibility in applications that do not always provide needed
supply voltages.
In particular, LCD panels often require a V
range of 3 V to 5 V. The circuit in Figure 46 is the rare exception in which a 5 V supply is available to power the digital
potentiometer.
Figure 46. V
Adjustment Application
COM
voltage in the
COM
For this reason, V
and VDD are provided as two separate
LOGIC
supply pins that can either be tied together or treated independently; V
and V
biasing up the A, B, and W terminals for added
DD
supplying the logic/EEPROM with power,
LOGIC
flexibility.
Figure 47. Circuitry When a Separate Supply is Not Available for V
DD
For a more detailed look at this application, refer to the article,
“Simple VCOM Adjustment uses any Logic Supply Voltage” in
the September 30, 2004 issue of EDN magazine.
In the more common case shown in Figure 47, only analog
14.4 V and digital logic 3.3 V supplies are available. By placing
discrete resistors above and below the digital potentiometer,
V
can now be tapped off the resistor string itself. Based on the
DD
chosen resistor values, the voltage at V
in this case equals 4.8
DD
V, allowing the wiper to be safely operated all the way up to 4.8
V. The current draw of V
because it is only on the order of microamps. V
the M C U’s 3.3 V digital supply because V
will not affect that node’s bias
DD
LOGIC
will draw the 35
LOG IC
is tied to
mA which is needed when writing to the EEPROM. It would be
impractical to try and source 35 mA through the 70 kΩ resistor,
therefore, V
is not connected to the same node as VDD.
LOG IC
Rev. C | Page 20 of 24
Data Sheet AD5259
OUTLINE DIMENSIONS
3.10
3.00
2.90
10
6
3.10
3.00
2.90
PIN 1
IDENTIFIER
0.95
0.85
0.75
0.15
0.05
COPLANARITY
1
0.50 BSC
0.10
COMPLIANT TO JEDEC STANDARDS MO-187-BA
Figure 48. 10-Lead Mini Small Outline Package [MSOP]
3.10
3.00 SQ
2.90
5.15
4.90
4.65
5
15° MAX
6°
0°
0.23
0.13
0.30
0.15
1.10 MAX
(RM-10)
Dimensions shown in millimeters
2.48
2.38
2.23
0.70
0.55
0.40
0.50 BSC
091709-A
PIN 1 INDEX
AREA
0.80
0.75
0.70
SEATING
PLANE
TOP VIEW
0.30
0.25
0.20
0.50
0.40
0.30
0.05 MAX
0.02 NOM
COPLANARITY
0.20 REF
0.08
6
EXPOSED
PAD
5
BOTTOM VIEW
FOR PRO P ER CONNECTIO N OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTIO N DE S CRI P T I ONS
SECTION OF THIS DATA SHEET.
10
1.74
1.64
1.49
1
N
1
I
P
R
C
I
A
O
T
N
I
D
)
5
1
.
R
0
(
2-27-2012-B
Figure 49. 10-Lead Lead Frame Chip Scale Package [LFCSP_WD]
3 mm × 3 mm Body, Very Very Thin, Dual Lead
(CP-10-9)
Dimensions shown in millimeters
Rev. C | Page 21 of 24
AD5259 Data Sheet
Model1
Package Description
Package Option
AD5259BCPZ100-R7
100 k
–40°C to +125°C
10-Lead LFCSP_WD
CP-10-9
D4S
ORDERING GUIDE
RAB (Ω)
Temperature
AD5259BRMZ5 5 k –40°C to +125°C 10-Lead MSOP RM-10 D4P
AD5259BRMZ5-R7 5 k –40°C to +125°C 10-Lead MSOP RM-10 D4P
AD5259BCPZ5-R7 5 k –40°C to +125°C 10-Lead LFCSP_WD CP-10-9 D4P
AD5259BRMZ10 10 k –40°C to +125°C 10-Lead MSOP RM-10 D4Q
AD5259BRMZ10-R7 10 k –40°C to +125°C 10-Lead MSOP RM-10 D4Q
AD5259BCPZ10-R7 10 k –40°C to +125°C 10-Lead LFCSP_WD CP-10-9 D4Q
AD5259BRMZ50 50 k –40°C to +125°C 10-Lead MSOP RM-10 D4R
AD5259BRMZ50-R7 50 k –40°C to +125°C 10-Lead MSOP RM-10 D4R
AD5259BCPZ50-R7 50 k –40°C to +125°C 10-Lead LFCSP_WD CP-10-9 D4R
AD5259BRMZ100 100 k –40°C to +125°C 10-Lead MSOP RM-10 D4S
AD5259BRMZ100-R7 100 k –40°C to +125°C 10-Lead MSOP RM-10 D4S
EVAL-AD5259DBZ Evaluation Board2
1
Z = RoHS Compliant Part.
2
The evaluation board is shipped with the 10 kΩ RAB resistor option; however, the board is compatible with all available resistor value options.
Branding
Rev. C | Page 22 of 24
Data SheetAD5259
NOTES
Rev. C | Page 23 of 24
AD5259 Data Sheet
NOTES
I2C refers to a communications protocol originally developed by Philips Semiconductors (now NXP Semiconductors).