Datasheet AD5235 Datasheet (ANALOG DEVICES)

1024-Position Digital Potentiometer
AD5235
Rev. F
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
Trademarks and registered trademarks are the property of their respective owners.
Fax: 781.461.3113 ©2004–2012 Analog Devices, Inc. All rights reserved.
ADDR
DECODE
AD5235
RDAC1
SERIAL
INTERFACE
CS
CLK
SDI
SDO
PR
WP
RD
Y
RDAC1
REGISTER
EEMEM1
RDAC2
REGISTER
EEMEM2
26 BYTES
RTOL*
USER EEMEM
POWER-ON
RESET
W1 B1
RDAC2
W2 B2
A1
V
DD
A2
V
SS
GND
02816-001
EEMEM
CONTROL
*RAB TOLERANCE
Data Sheet

FEATURES

Dual-channel, 1024-position resolution 25 kΩ, 250 kΩ nominal resistance Maximum ±8% nominal resistor tolerance error Low temperature coefficient: 35 ppm/°C
2.7 V to 5 V single supply or ±2.5 V dual supply SPI-compatible serial interface Nonvolatile memory stores wiper settings Power-on refreshed with EEMEM settings Permanent memory write protection Resistance tolerance stored in EEMEM 26 bytes extra nonvolatile memory for user-defined
information 1M programming cycles 100-year typical data retention

APPLICATIONS

DWDM laser diode driver, optical supervisory systems Mechanical potentiometer replacement Instrumentation: gain, offset adjustment Programmable voltage-to-current conversion Programmable filters, delays, time constants Programmable power supply Low resolution DAC replacement Sensor calibration

GENERAL DESCRIPTION

The AD5235 is a dual-channel, nonvolatile memory,1 digitally controlled potentiometer guaranteed maximum low resistor tolerance error of ±8%. The device performs the same electronic adjustment function as a mechanical potentiometer with enhanced resolution, solid state reliability, and superior low temperature coefficient per­formance. The versatile programming of the AD5235 via an SPI®-compatible serial interface allows 16 modes of operation and adjustment including scratchpad programming, memory storing and restoring, increment/decrement, ±6 dB/step log taper adjustment, wiper setting readback, and extra EEMEM defined information such as memory data for other components, look-up table, or system identification information.
1
The terms nonvolatile memory and EEMEM are used interchangeably.
2
The terms digital potentiometer and RDAC are used interchangeably.
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
2
with 1024-step resolution, offering
1
for user-
Nonvolatile Memory, Dual

FUNCTIONAL BLOCK DIAGRAM

Figure 1.
In the scratchpad programming mode, a specific setting can be programmed directly to the RDAC resistance between Terminal W and Terminal A and Te rm i na l W and Terminal B. This setting can be stored into the EEMEM and is restored automatically to the RDAC register during system power-on.
The EEMEM content can be restored dynamically or through external
PR
strobing, and a WP function protects EEMEM contents. To simplify the programming, the independent or simultaneous linear-step increment or decrement commands can be used to move the RDAC wiper up or down, one step at a time. For logarithmic ±6 dB changes in the wiper setting, the left or right bit shift command can be used to double or halve the RDAC wiper setting.
The AD5235 patterned resistance tolerance is stored in the EEMEM. The actual end-to-end resistance can, therefore, be known by the host processor in readback mode. The host can execute the appropriate resistance step through a software routine that simplifies open-loop applications as well as precision calibration and tolerance matching applications.
The AD5235 is available in a thin, 16-lead TSSOP package. The part is guaranteed to operate over the extended industrial temperature range of −40°C to +85°C.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700
2
register, which sets the
www.analog.com
AD5235 Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
General Description ......................................................................... 1
Functional Block Diagram .............................................................. 1
Revision History ............................................................................... 3
Specifications ..................................................................................... 4
Electrical Characteristics—25 kΩ, 250 kΩ Vers ions ............... 4
Interface Timing and EEMEM Reliability Characteristics—
25 kΩ, 250 kΩ Versions ............................................................... 6
Absolute Maximum Ratings ............................................................ 8
ESD Caution .................................................................................. 8
Pin Configuration and Function Descriptions ............................. 9
Typical Performance Characteristics ........................................... 10
Test Circuits ................................................................................. 14
Theory of Operation ...................................................................... 16
Scratchpad and EEMEM Programming .................................. 16
Basic Operation .......................................................................... 16
EEMEM Protection .................................................................... 17
Digital Input and Output Configuration................................. 17
Serial Data Interface ................................................................... 17
Daisy-Chain Operation ............................................................. 18
Terminal Voltage Operating Range .......................................... 18
Advanced Control Modes ......................................................... 20
RDAC Structure .......................................................................... 21
Programming the Variable Resistor ......................................... 22
Programming the Potentiometer Divider ............................... 22
Programming Examples ............................................................ 23
EVA L-AD5235SDZ Evaluation Kit .......................................... 23
Applications Information .............................................................. 24
Bipolar Operation from Dual Supplies.................................... 24
Gain Control Compensation .................................................... 24
High Voltage Operation ............................................................ 24
DAC .............................................................................................. 24
Bipolar Programmable Gain Amplifier ................................... 25
10-Bit Bipolar DAC .................................................................... 25
Programmable Voltage Source with Boosted Output ........... 25
Programmable Current Source ................................................ 26
Programmable Bidirectional Current Source ......................... 26
Programmable Low-Pass Filter ................................................ 27
Programmable Oscillator .......................................................... 27
Optical Transmitter Calibration with ADN2841 ................... 28
Resistance Scaling ...................................................................... 28
Resistance Tolerance, Drift, and Temperature Coefficient
Mismatch Considerations ......................................................... 29
RDAC Circuit Simulation Model ............................................. 29
Outline Dimensions ....................................................................... 30
Ordering Guide .......................................................................... 30
Rev. F | Page 2 of 32
Data Sheet AD5235

REVISION HISTORY

6/12—Rev. E to Rev. F
Changes to Table 1 Conditions ........................................................ 4
Removed Positive Supply Current RDY and/or SDO Floating Parameters and Negative Supply Current RDY and/or SDO
Floating Parameters, Table 1 ............................................................ 5
Added Endnote 2 to Ordering Guide ........................................... 30
4/11—Rev. D to Rev. E
Changes to Figure 12 ...................................................................... 11
4/11—Rev. C to Rev. D
Changes to EEMEM Performance .............................. Throughout
Changes to Features and General Descriptions Sections ............. 1
Changes to Specifications Section ................................................... 4
Changes to Pin 5, Pin 13, Pin 14 Descriptions .............................. 9
Changes to Typical Performance Characteristics Section ......... 10
Changes to Table 7 .......................................................................... 19
Changes to Table 9 .......................................................................... 21
Changes to Rheostat Operation Section, Table 12, Table 13 ..... 22
Changes to Table 16, Table 19, and EVAL-AD5235SDZ
Evaluation Kit Section .................................................................... 23
Changes to RDAC Circuit Simulation Model Section ............... 29
Updated Outline Dimensions ........................................................ 30
Changes to Ordering Guide ........................................................... 30
4/09—Rev. B to Rev. C
Changes to Figure 1........................................................................... 1
Changes to Specifications ................................................................. 3
Changes to SDO, Description Column, Table 4 ............................ 8
Changes to Figure 18 ...................................................................... 11
Changes to Theory of Operation Section .................................... 14
Changes to Serial Data Interface Section ..................................... 15
Changes to Linear Increment and Decrement Instructions Section, Logarithmic Taper Mode Adjustment Section, and
Figure 42 ........................................................................................... 18
Changes to Rheostat Operations Section ..................................... 20
Changes to Bipolar Programmable Gain Amplifier Section,
Figure 49, Table 21, and 10-Bit Bipolar DAC Section ................ 23
Changes to Programmable Oscillator Section and Figure 56 ... 25
Changes to Ordering Guide ........................................................... 28
7/04—Rev. A to Rev. B
Updated Formatting .......................................................... Universal
Edits to Features, General Description, and Block Diagram ...... 1
Changes to Specifications................................................................. 3
Replaced Timing Diagrams ............................................................. 6
Changes to Absolute Maximum Ratings........................................ 7
Changes to Pin Function Descriptions .......................................... 8
Changes to Typical Performance Characteristics ......................... 9
Additional Test Circuit (Figure 36)................................................. 9
Edits to Theory of Operation ........................................................ 14
Edits to Applications ....................................................................... 23
Updated Outline Dimensions........................................................ 27
8/02—Rev. 0 to Rev. A
Change to Features and General Description ............................... 1
Change to Specifications .................................................................. 2
Change to Calculating Actual End-to-End Terminal
Resistance Section ........................................................................... 14
Rev. F | Page 3 of 32
AD5235 Data Sheet
Resistor Differential Nonlinearity2
R-DNL
RWB
−1 +1
LSB
Output Logic Low
VOL
IOL = 1.6 mA, V
= 5 V (see
0.4
V

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS

VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V, VSS = −2.5 V, VA = VDD, VB = VSS, −40°C < TA < +85°C, unless otherwise noted.
These specifications apply to versions with a date code 1209 or later.
Table 1.
Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT
MODE (All RDACs)
Resistor Integral Nonlinearity2 R-INL RWB −2 +2 LSB
Nominal Resistor Tolerance ∆RAB/RAB −8 +8 %
Resistance Temperature Coefficient (∆RAB/RAB)/∆T × 106 35 ppm/°C
Wiper Resistance RW IW = 1 V/RWB, code = midscale
VDD = 5 V 30 60 VDD = 3 V 50
Nominal Resistance Match R DC CHARACTERISTICS—
POTENTIOMETER DIVIDER MODE
(All RDACs)
Resolution N 10 Bits
Differential Nonlinearity3 DNL −1 +1 LSB
Integral Nonlinearity3 INL −1 +1 LSB
Voltage Divider Temperature
Coefficient Full-Scale Error V Zero-Scale Error V
RESISTOR TERMINALS
Terminal Voltage Range4 VA, VB, VW VSS VDD V Capacitance Ax, Bx5 CA, CB f = 1 MHz, measured to GND,
Capacitance Wx5 CW f = 1 MHz, measured to GND,
Common-Mode Leakage Current
DIGITAL INPUTS AND OUTPUTS
Input Logic High VIH With respect to GND, VDD = 5 V 2.4 V Input Logic Low VIL With respect to GND, VDD = 5 V 0.8 V Input Logic High VIH With respect to GND, VDD = 3 V 2.1 V Input Logic Low VIL With respect to GND, VDD = 3 V 0.6 V Input Logic High VIH With respect to GND, VDD = +2.5 V,
Input Logic Low VIL With respect to GND, VDD = +2.5 V,
Output Logic High (SDO, RDY) VOH R
Input Current IIL VIN = 0 V or VDD ±1 µA Input Capacitance5 CIL 5 pF
±0.1 %
AB1/RAB2
(∆VW/VW)/∆T × 106 Code = midscale 15 ppm/°C
Code = full scale −6 0 LSB
WFSE
Code = zero scale 0 4 LSB
WZSE
11 pF
code = midscale
80 pF
code = midscale
5, 6
ICM VW = VDD/2 0.01 ±1 µA
2.0 V
V
= −2.5 V
SS
0.5 V
V
= −2.5 V
SS
= 2.2 kΩ to 5 V (see
PULL-UP
4.9 V
Figure 38)
Figure 38)
LOGIC
Rev. F | Page 4 of 32
Data Sheet AD5235
Negative Supply Current
ISS
VDD = +2.5 V, VSS = −2.5 V
f = 1 kHz, code = midscale
RAB = 25 kΩ
0.009
%
Resistor Noise Density
e
RAB = 25 kΩ/250 kΩ
20/64
nV/√Hz
Parameter Symbol Conditions Min Typ1 Max Unit
POWER SUPPLIES
Single-Supply Power Range VDD VSS = 0 V 2.7 5.5 V Dual-Supply Power Range VDD/VSS ±2.25 ±2.75 V Positive Supply Current IDD VIH = VDD or VIL = GND 2 5 µA
VIH = VDD or VIL = GND −4 −2 µA EEMEM Store Mode Current IDD (store) VIH = VDD or VIL = GND,
V
= GND, ISS ≈ 0
SS
ISS (store) VDD = +2.5 V, VSS = −2.5 V −2 mA EEMEM Restore Mode Current7 IDD (restore) VIH = VDD or VIL = GND,
V
= GND, ISS ≈ 0
SS
ISS (restore) VDD = +2.5 V, VSS = −2.5 V −320 µA Power Dissipation8 P
VIH = VDD or VIL = GND 10 30 µW
DISS
Power Supply Sensitivity5 PSS ∆VDD = 5 V ± 10% 0.006 0.01 %/%
DYNAMIC CHARACTERISTICS
5, 9
Bandwidth BW −3 dB, RAB = 25 kΩ/250 kΩ 125/12 kHz Total Harmonic Distortion THDW VA = 1 V rms, VB = 0 V,
RAB = 250 kΩ 0.035 %
VW Settling Time tS VA = VDD, VB = 0 V, VW = 0.50% error
band, from zero scale to midscale RAB = 25 kΩ 4 µs RAB = 250 kΩ 36 µs
N_WB
Crosstalk (CW1/CW2) CT VA1 = VDD, VB1 = VSS , measured VW2
with VW1 making full-scale change,
= 25 kΩ/250 kΩ
R
AB
Analog Crosstalk CTA V
= 5 V p-p, f = 1 kHz, measured
AB2
VW1, Code 1 = midscale, Code 2 =
full scale, R
1
Typicals represent average readings at 25°C and VDD = 5 V.
2
Resistor position nonlinearity error (R-INL) is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. I
3
INL and DNL are measured at VW with the RDAC configured as a potentiometer divider similar to a voltage output DAC. VA = VDD and VB = VSS. DNL specification limits of
±1 LSB maximum are guaranteed monotonic operating conditions (see Figure 28).
4
Resistor Terminal A, Resistor Terminal B, and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground-
referenced bipolar signal adjustment.
5
Guaranteed by design and not subject to production test.
6
Common-mode leakage current is a measure of the dc leakage from any Terminal A, Terminal B, or Terminal W to a common-mode bias level of VDD/2.
7
EEMEM restore mode current is not continuous. Current is consumed while EEMEM locations are read and transferred to the RDAC register.
8
P
is calculated from (IDD × VDD) + (ISS × VSS).
DISS
9
All dynamic characteristics use VDD = +2.5 V and VSS = −2.5 V.
= 25 kΩ/250 kΩ
AB
WB = (VDD − 1)/RWB (see Figure 27).
2 mA
320 µA
30/60
−110/−100
nV-s
dB
Rev. F | Page 5 of 32
AD5235 Data Sheet
Input Clock Pulse Width
t4, t5
Clock level high or low
10
ns
CLK to SDO Propagation Delay2
t10
RP = 2.2 kΩ, CL < 20 pF
50
ns
CLK to SDO Data Hold Time
t11
RP = 2.2 kΩ, CL < 20 pF
0
ns
Read EEMEM Time4
t16
Applies to Instructions 0x8, 0x9, 0x10
7 30
µs
Data Retention8
100 Years

INTERFACE TIMING AND EEMEM RELIABILITY CHARACTERISTICS—25 kΩ, 250 kΩ VERSIONS

Guaranteed by design and not subject to production test. See the Timing Diagrams section for the location of measured values. All input control voltages are specified with t measured using both V
= 2.7 V and VDD = 5 V.
DD
Table 2.
Parameter Symbol Conditions Min Typ1 Max Unit
Clock Cycle Time (t
Setup Time t2 10 ns
CS
) t1 20 ns
CYC
CLK Shutdown Time to CS Rise t3 1 t
Data Setup Time t6 From positive CLK transition 5 ns Data Hold Time t7 From positive CLK transition 5 ns
to SDO-SPI Line Acquire t8 40 ns
CS
to SDO-SPI Line Release t9 50 ns
CS
= tF = 2.5 ns (10% to 90% of 3 V) and timed from a voltage level of 1.5 V. Switching characteristics are
R
CYC
High Pulse Width3 t12
CS
High to CS High3 t13 4 t
CS
10 ns
CYC
RDY Rise to CS Fall t14 0 ns
Rise to RDY Fall Time t15 0.15 0.3 ms
CS Store EEMEM Time
Rise to Clock Rise/Fall Setup t17 10 ns
CS Preset Pulse Width (Asynchronous)6 t Preset Response Time to Wiper Setting6 t Power-On EEMEM Restore Time6 t
4, 5
t16 Applies to Instructions 0x2, 0x3 15 50 ms
50 ns
PRW
PRESP
30 µs
EEMEM
pulsed low to refresh wiper positions
PR
30 µs
FLASH/EE MEMORY RELIABILITY
Endurance7 TA = 25°C 1 100
1
Typicals represent average readings at 25°C and VDD = 5 V.
2
Propagation delay depends on the value of VDD, R
3
Valid for commands that do not activate the RDY pin.
4
The RDY pin is low only for Instruction 2, Instruction 3, Instruction 8, Instruction 9, Instruction 10, and the PR hardware pulse: CMD_8 ~ 20 µs; CMD_9, CMD_10 ~ 7 µs;
CMD_2, CMD_3 ~ 15 ms;
5
Store EEMEM time depends on the temperature and EEMEM writes cycles. Higher timing is expected at a lower temperature and higher write cycles.
6
Not shown in Figure 2 and Figure 3.
7
Endurance is qualified to 100,000 cycles per JEDEC Standard 22, Method A117 and measured at −40°C, +25°C, and +85°C.
8
Retention lifetime equivalent at junction temperature (TJ) = 85°C per JEDEC Standard 22, Method A117. Retention lifetime based on an activation energy of 1 eV
derates with junction temperature in the Flash/EE memory.
PR
hardware pulse ~ 30 µs.
PULL-UP
, and CL.
MCycles kCycles
Rev. F | Page 6 of 32
Data Sheet AD5235
CPOL = 1
t
12
t
13
t
3
t
17
t
9
t
11
t
5
t
4
t
2
t
1
CLK
t
8
B24*
B23 (MSB) B0 (LSB)
B23 (MSB)
HIGH OR LOW
HIGH OR LOW
B23 B0
B0 (LSB)
RDY
CPHA = 1
t
10
t
7
t
6
t
14
t
15
t
16
*THE EXTRA BIT THAT IS NOT DEFINED IS NORMALLY THE LSB OF THE CHARACTE R P RE V IOUSLY TRANSMITTED.
THE CPOL = 1 MICROCONTROLLER COMM AND ALIGNS THE INCOMING DATATO THE POSITIVE EDGE OF THE CLOCK.
SDO
SDI
02816-002
CS
t
12
t
13
t
3
t
17
t
9
t
11
t
5
t
4
t
2
t
1
CLK
CPOL = 0
t
8
B23 (MSB OUT) B0 (LSB)
SDO
B23 (MSB IN)
B23 B0
HIGH OR LOW
HIGH OR LOW
B0 (LSB)
SDI
RDY
CPHA = 0
t
10
t
7
t
6
t
14
t
15
t
16
*THE EXT
RA BIT THAT IS NOT DEFINED IS NORMALLY THE MSB OF THE CHARAC
TER JUST RECEIVED.
THE CPOL = 0 MICROCONTROLLER COMMAND ALIGNS THE INCOMING DATA TO THE POSITIVE EDGE OF THE CLOCK.
*
CS
02816-003

Timing Diagrams

Figure 2. CPHA = 1 Timing Diagram
Figure 3. CPHA = 0 Timing Diagram
Rev. F | Page 7 of 32
AD5235 Data Sheet
Vapor Phase (60 sec)
215°C
Package Power Dissipation
(TJ max − TA)/θJA

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND –0.3 V to +7 V VSS to GND +0.3 V to −7 V VDD to VSS 7 V VA, VB, VW to GND VSS − 0.3 V to VDD + 0.3 V IA, IB, IW
Pulsed1 ±20 mA
Continuous ±2 mA Digital Input and Output Voltage to GND −0.3 V to VDD + 0.3 V Operating Temperature Range2 −40°C to +85°C Maximum Junction Temperature (TJ max) 150°C Storage Temperature Range −65°C to +150°C Lead Temperature, Soldering
Infrared (15 sec) 220°C Thermal Resistance
Junction-to-Ambient θJA,TSSOP-16 150°C/W
Junction-to-Case θJC, TSSOP-16 28°C/W
1
Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum applied voltage across any two of the A, B, and W terminals at a given resistance.
2
Includes programming of nonvolatile memory.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

ESD CAUTION

Rev. F | Page 8 of 32
Data Sheet AD5235
SDI SDO GND
A1
V
SS
W1
CLK
B1
CS PR WP V
DD
A2
02816-005
W2 B2
RDY
1
2
3
4
5
6
7 8
16
15
14
13 12
11
10
9
AD5235
TOP VIEW
(Not to S cale)
4
GND
Ground Pin, Logic Ground Reference.

PIN CONFIGURATION AND FUNCTION DESCRIPTIONS

Figure 4. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
1 CLK Serial Input Register Clock. Shifts in one bit at a time on positive clock edges. 2 SDI Serial Data Input. Shifts in one bit at a time on positive clock CLK edges. MSB loads first. 3 SDO Serial Data Output. Serves readback and daisy-chain functions. Command 9 and Command 10 activate the SDO
output for the readback function, delayed by 24 or 25 clock pulses, depending on the clock polarity before and after the data-word (see Figure 2 and Figure 3). In other commands, the SDO shifts out the previously loaded SDI bit pattern, delayed by 24 or 25 clock pulses depending on the clock polarity (see Figure 2 and Figure 3). This previously shifted out SDI can be used for daisy-chaining multiple devices. Whenever SDO is used, a pull-up resistor in the range of 1 kΩ to 10 kΩ is needed.
5 VSS Negative Supply. Connect to 0 V for single-supply applications. If VSS is used in dual supply, it must be able to sink
2 mA for 15 ms when storing data to EEMEM. 6 A1 Terminal A of RDAC1. 7 W1 Wiper terminal of RDAC1. ADDR (RDAC1) = 0x0. 8 B1 Terminal B of RDAC1. 9 B2 Terminal B of RDAC2. 10 W2 Wiper terminal of RDAC2. ADDR (RDAC2) = 0x1. 11 A2 Terminal A of RDAC2. 12 VDD Positive Power Supply. 13
Optional Write Protect. When active low, WP prevents any changes to the present contents, except PR strobe.
WP
CMD_1 and COMD_8 refresh the RDAC register from EEMEM. Tie WP to VDD, if not used. 14
Optional Hardware Override Preset. Refreshes the scratchpad register with current contents of the EEMEM
PR
register. Factory default loads midscale until EEMEM is loaded with a new value by the user.
is activated
PR
at the logic high transition. Tie PR to VDD, if not used. 15
Serial Register Chip Select Active Low. Serial register operation takes place when CS returns to logic high.
CS
16 RDY Ready. Active high open-drain output. Identifies completion of Instruction 2, Instruction 3, Instruction 8,
Instruction 9, Instruction 10, and
PR
.
Rev. F | Page 9 of 32
AD5235 Data Sheet
DIGITAL CODE
0 200 400 600 1000
INL ERROR ( LSB)
800
0.20
–0.20
–0.15
–0.10
–0.05
0
0.05
0.10
0.15
–40°C
+25°C
+85°C
02816-006
DIGITAL CODE
0 200 400 600 1000
DNL ERROR (L S B)
800
0.16
–0.04
–0.02
0.02
0
0.04
0.06
0.08
0.10
0.12
0.14
02816-007
–40°C
+25°C
+85°C
DIGITAL CODE
0 200 400 600 1000
INL ERROR ( LSB)
800
0.20
–0.20
–0.15
–0.10
–0.05
0
0.05
0.10
0.15
–40°C
+25°C
+85°C
02816-008
DIGITAL CODE
0 200 400 600 1000
DNL ERROR (L S B)
800
0.20
–0.15
–0.10
–0.05
0
0.05
0.10
0.15
02816-009
–40°C
+25°C
+85°C
CODE (Decimal )
POTENTIOMETER MODE TEMPCO (ppm/°C)
200
180
160
140
120
100
80
60
40
20
0
0 1023768512256
25kΩ 250kΩ
02816-010
02816-011
CODE (Decimal )
RHEOSTAT MODE TEMPCO (ppm/°C)
200
180
160
140
120
100
80
60
40
20
0
0 1023768512256
25kΩ 250kΩ

TYPICAL PERFORMANCE CHARACTERISTICS

Figure 5. INL vs. Code, TA = −40°C, +25°C, +85°C Overlay, RAB = 25 kΩ
Figure 6. DNL vs. Code, TA = −40°C, +25°C, +85°C Overlay, RAB = 25 kΩ
Figure 8. R-DNL vs. Code, TA = −40°C, +25°C, +85°C Overlay, RAB = 25 kΩ
Figure 9. (∆VW/VW)/∆T × 106 Potentiometer Mode Tempco
Figure 7. R-INL vs. Code, TA = −40°C, +25°C, +85°C Overlay, RAB = 25 kΩ
Figure 10. (∆RWB/RWB)/∆T × 106 Rheostat Mode Tempco
Rev. F | Page 10 of 32
Data Sheet AD5235
CODE (Decimal )
0 200 400 800600 1000
WIPER ON RESISTANCE (Ω)
60
50
40
30
20
10
0
2.7V
3.0V
3.3V
5.0V
5.5V
02816-012
TEMPERATURE (°C)
–40 –20 0 20 40 60 8580
I
DD
/I
SS
(µA)
3
–3
–2
–1
0
1
2
I
DD
= 2.7V
I
DD
= 3.3V
I
DD
= 3.0V
I
DD
= 5.5V
I
DD
= 5.0V
I
SS
= 2.7V
I
SS
= 3.3V
I
SS
= 3.0V
I
SS
= 5.5V
I
SS
= 5.0V
02816-013
FREQUENCY (MHz)
1 1098765432
I
DD
(µA)
50
10
20
30
40
0
FULL SCALE MIDSCALE ZERO SCAL E
02816-014
0
100
200
300
400
I
DD
(µA)
VDIO (V)
2.7V
3.0V
3.3V
5.0V
5.5V
02816-015
0 1 2 3 4 5
0.12
0
0.02
0.04
0.06
0.08
0.10
10 100 1k 10k 100k
THD + N (%)
FREQUENCY ( Hz )
250kΩ
25kΩ
02816-115
10
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
THD + N (%)
AMPLIT UDE ( V rms)
250kΩ
25kΩ
02816-116
Figure 11. Wiper On Resistance vs. Code
Figure 12. IDD vs. Temperature
Figure 14. IDD vs. Digital Input Voltage
Figure 15. THD + Noise vs. Frequency
Figure 13. IDD vs. Clock Frequency, RAB = 25 kΩ
Figure 16. THD + Noise vs. Amplitude
Rev. F | Page 11 of 32
AD5235 Data Sheet
FREQUENCY
(Hz)
02816-016
1k 10k 100k 1M
GAIN (dB)
3
–3
0
–6
–9
–12
V
DD
/V
SS
= ±2.5V
V
A
= 1V rms
D = MIDSCALE
f
–3dB
= 12kHz
R
AB
= 250k
R
AB
= 25k
f
–3dB
= 125kHz
FREQUENCY (Hz)
02816-017
1k 10k 100k 1M
GAIN (dB)
0
–20
–10
–30
–40
–50
–60
CODE 0x200
0x100 0x080 0x040
0x020 0x010 0x008
0x004 0x002
0x001
FREQUENCY (Hz)
02816-018
1k 10k 100k 1M
0
–20
–10
–30
–40
–50
–60
GAIN (dB)
CODE 0x200
0x100 0x080 0x040
0x020 0x010
0x008 0x004
0x002 0x001
FREQUENCY ( Hz )
10 100 1k 10k 100k 1M
PSRR (dB)
–80
–60
–70
–50
–40
–30
–20
–10
0
R
AB
= 250k
V
DD
= 5V ± 10% AC
V
SS
= 0V, V
A
= 4V, V
B
= 0V
MEASURED AT V
W
WITH CO DE = 0x200
T
A
= 25°C
R
AB
= 25k
02816-019
02816-020
VDD = 5V V
A
= 5V
V
B
= 0V
T
A
= 25°C
1V/DIV
10µs/DIV
V
DD
VW (FULL SCALE)
TIME (µs)
0 20 40 60 80 100 120
144
AMPLITUDE (V)
2.5196
2.484
2.488
2.492
2.496
2.500
2.504
2.508
2.512
2.516
2.4796
V
DD
= V
SS
= 5V
CODE = 0x200 T O 0x1FF
02816-021
Figure 17. −3 dB Bandwidth vs. Resistance (See Figure 33)
Figure 18. Gain vs. Frequency vs. Code, RAB = 25 kΩ (See Figure 33)
Figure 20. PSRR vs. Frequency
Figure 21. Power-On Reset
Figure 19. Gain vs. Frequency vs. Code, RAB = 250 kΩ (See Figure 33)
Figure 22. Midscale Glitch Energy, RAB = 25 kΩ
Rev. F | Page 12 of 32
Data Sheet AD5235
TIME (µs)
AMPLITUDE (V)
0 20 40 60 80 100 120
144
2.3795
2.344
2.348
2.352
2.356
2.360
2.364
2.368
2.372
2.376
2.3399
02816-022
02816-023
CS (5V/DIV)
CLK (5V/DI V )
SDI (5V/DIV)
IDD (2mA/DIV)
VDD = 5V
T
A
= 25°C
2.60
2.55
2.50
2.45
2.40 0 0.5 1.0 1.5 2.0
WIPER VOLTAGE (V)
TIME (µs)
02816-126
CODE (Decimal )
02816-025
100
1
0.01 1023
THEORECT ICAL (I
WB_MAX
– mA)
0.1
10
896768640512384128 2560
VA = V
B
= OPEN
T
A
= 25°C
R
AB
= 25k
R
AB
= 250k
Figure 23. Midscale Glitch Energy, RAB = 250 kΩ
Figure 25. Digital Feedthrough
Figure 24. IDD vs. Time when Storing Data to EEMEM
Figure 26. I
WB_MAX
vs. Code
Rev. F | Page 13 of 32
AD5235 Data Sheet
A
W
B
NC
I
W
DUT
V
MS
NC = NO CONNECT
02816-026
A
W
B
DUT
V
MS
V+
02816-027
V+ = V
DD
1LSB = V+/2
N
A
W
B
DUT
I
W
= V
DD
/R
NOMINAL
V
MS1
V
MS2
V
W
02816-028
R
W
= [V
MS1
– V
MS2
]/I
W
A
W
B
V
MS
V+ = V
DD
±10%
PSRR (dB) = 20 L OG
V
MS
ΔV
DD
(
)
~
V
A
V
DD
ΔV
MS
%
ΔV
DD
%
PSS (%/%) =
V+
02816-029
Δ
OFFSET BIAS
OFFSET
GND
ABDUT
W
5V
V
IN
V
OUT
OP279
02816-030
OFFSET BIAS
OFFSET
GND
ABDUT
W
5V
V
IN
V
OUT
OP279
02816-031
OFFSET
GND
A
B
DUT
W
+15V
V
IN
V
OUT
OP42
–15V
2.5V
02816-032
+
DUT
CODE = 0x00
0.1V
V
SS
TO V
DD
RSW=
0.1V I
SW
I
SW
W
B
A = NC
02816-033

TEST CIRCUITS

Figure 27 to Figure 37 define the test conditions used in the Specifications section.
Figure 27. Resistor Position Nonl inearity Error (Rheostat Operation; R-INL, R-DNL)
Figure 28. Potentiometer Divider Nonlinearity Error (INL, DNL)
Figure 29. Wiper Resistance
Figure 31. Inverting Gain
Figure 32. Noninverting Gain
Figure 33. Gain vs. Frequency
Figure 30. Power Supply Sensitivity (PSS, PSRR)
Figure 34. Incremental On Resistance
Rev. F | Page 14 of 32
Data Sheet AD5235
DUT
V
SS
I
CM
W
B
V
DD
NC
NC
V
CM
GND
A
NC = NO CONNECT
02816-034
02816-035
A1
RDAC1 RDAC2
W1
NC
B1
A2
W2
B2
C
TA
= 20 LOG[V
OUT
/V
IN
]
NC = NO CONNECT
V
IN
V
OUT
V
SS
V
DD
02816-036
200µA I
OL
200µA I
OH
V
OH
(MIN) OR V
OL
(MAX)
TO OUTPUT
PIN
C
L
50pF
Figure 35. Common-Mode Leakage Current
Figure 37. Load Circuit for Measuring VOH and VOL
(The diode bridge test circuit is equ ivalent to the
application circuit with R
PULL-UP
of 2.2 kΩ.)
Figure 36. Analog Crosstalk
Rev. F | Page 15 of 32
AD5235 Data Sheet

THEORY OF OPERATION

The AD5235 digital potentiometer is designed to operate as a true variable resistor. The resistor wiper position is determined by the RDAC register contents. The RDAC register acts as a scratchpad register, allowing unlimited changes of resistance settings. The scratchpad register can be programmed with any position setting using the standard SPI serial interface by loading the 24-bit data-word. In the format of the data-word, the first four bits are commands, the following four bits are addresses, and the last 16 bits are data. When a specified value is set, this value can be stored in a corresponding EEMEM register. During subsequent power-ups, the wiper setting is automatically loaded to that value.
Storing data to the EEMEM register takes about 15 ms and consumes approximately 2 mA. During this time, the shift register is locked, preventing any changes from taking place. The RDY pin pulses low to indicate the completion of this EEMEM storage. There are also 13 addresses with two bytes each of user-defined data that can be stored in the EEMEM register from Address 2 to Address 14.
The following instructions facilitate the programming needs of the user (see Table 7 for details):
0. Do nothing.
1. Restore EEMEM content to RDAC.
2. Store RDAC setting to EEMEM.
3. Store RDAC setting or user data to EEMEM.
4. Decrement by 6 dB.
5. Decrement all by 6 dB.
6. Decrement by one step.
7. Decrement all by one step.
8. Reset EEMEM content to RDAC.
9. Read EEMEM content from SDO.
10. Read RDAC wiper setting from SDO.
11. Write data to RDAC.
12. Increment by 6 dB.
13. Increment all by 6 dB.
14. Increment by one step.
15. Increment all by one step.
Table 14 to Tabl e 20 provide programming examples that use some of these commands.

SCRATCHPAD AND EEMEM PROGRAMMING

The scratchpad RDAC register directly controls the position of the digital potentiometer wiper. For example, when the scratchpad register is loaded with all 0s, the wiper is connected to Te rmi na l B of the variable resistor. The scratchpad register is a standard logic register with no restriction on the number of changes allowed, but the EEMEM registers have a program erase/write cycle limitation.

BASIC OPERATION

The basic mode of setting the variable resistor wiper position (programming the scratchpad register) is accomplished by loading the serial data input register with Instruction 11 (0xB), Address 0, and the desired wiper position data. When the proper wiper position is determined, the user can load the serial data input register with Instruction 2 (0x2), which stores the wiper position data in the EEMEM register. After 15 ms, the wiper position is permanently stored in nonvolatile memory.
Table 5 provides a programming example listing the sequence of the serial data input (SDI) words with the serial data output appearing at the SDO pin in hexadecimal format.
Table 5. Write and Store RDAC Settings to EEMEM Registers
SDI SDO Action
0xB00100 0xXXXXXX Writes data 0x100 to the RDAC1 register,
Wiper W1 moves to 1/4 full-scale position.
0x20XXXX 0xB00100 Stores RDAC1 register content into the
EEMEM1 register.
0xB10200 0x20XXXX Writes Data 0x200 to the RDAC2 register,
Wiper W2 moves to 1/2 full-scale position.
0x21XXXX 0xB10200 Stores RDAC2 register contents into the
EEMEM2 register.
At system power-on, the scratchpad register is automatically refreshed with the value previously stored in the corresponding EEMEM register. The factory-preset EEMEM value is midscale. The scratchpad register can also be refreshed with the contents of the EEMEM register in three different ways. First, executing Instruction 1 (0x1) restores the corresponding EEMEM value. Second, executing Instruction 8 (0x8) resets the EEMEM values of both channels. Finally, pulsing the EEMEM settings. Operating the hardware control requires a complete pulse signal. When logic sets the wiper at midscale. The EEMEM value is not loaded until
PR
returns high.
PR
pin refreshes both
PR
PR
goes low, the internal
function
Rev. F | Page 16 of 32
Data Sheet AD5235
VALID
COMMAND
COUNTER
COMMAND
PROCESSOR
AND ADDRESS
DECODE
(FOR DAIS Y CHAIN ONLY)
SERIAL
REGISTER
CLK
SDI
5V
R
PULL-UP
SDO
GND
PR WP
AD5235
02816-037
CS
LOGIC
PINS
V
DD
GND
INPUTS
300
02816-038
V
DD
GND
INPUT
300
02816-039
WP

EEMEM PROTECTION

The write protect (WP) pin disables any changes to the scratchpad register contents, except for the EEMEM setting, which can still be restored using Instruction 1, Instruction 8, and the hardware EEMEM protection feature.

DIGITAL INPUT AND OUTPUT CONFIGURATION

All digital inputs are ESD protected, high input impedance that can be driven directly from most digital sources. Active at logic low, internal pull-up resistors are present on any digital input pins. To avoid floating digital pins that might cause false triggering in a noisy environment, add pull-up resistors. This is applicable when the device is detached from the driving source when it is programmed.
The SDO and RDY pins are open-drain digital outputs that only need pull-up resistors if these functions are used. To optimize the speed and power trade-off, use 2.2 kΩ pull-up resistors.
The equivalent serial data input and output logic is shown in Figure 38. The open-drain output SDO is disabled whenever chip-select ( inputs is shown in Figure 39 and Figure 40.
PR
pulse. Therefore, WP can be used to provide a
PR
and WP must be tied to VDD, if they are not used. No
CS
) is in logic high. ESD protection of the digital
Figure 38. Equivalent Digital Input and Output Logic
Figure 40. Equivalent
WP
Input Protection

SERIAL DATA INTERFACE

The AD5235 contains a 4-wire SPI-compatible digital interface
CS
(SDI, SDO, loaded with MSB first. The format of the word is shown in Table 6. The command bits (C0 to C3) control the operation of the digital potentiometer according to the command shown in Table 7. A0 to A3 are the address bits. A0 is used to address RDAC1 or RDAC2. Address 2 to Address 14 are accessible by users for extra EEMEM. Address 15 is reserved for factory usage. Tab l e 9 provides an address map of the EEMEM locations. D0 to D9 are the values for the RDAC registers. D0 to D15 are the values for the EEMEM registers.
The AD5235 has an internal counter that counts a multiple of 24 bits (a frame) for proper operation. For example, AD5235 works with a 24-bit or 48-bit word, but it cannot work properly with a 23-bit or 25-bit word. To prevent data from mislocking (due to noise, for example), the counter resets, if the count is not a multiple of four when is multiple of four. In addition, the AD5235 has a subtle feature that, if previous command (except during power-up). As a result, care must be taken to ensure that no excessive noise exists in the CLK or CS
line that might alter the effective number-of-bits pattern.
The SPI interface can be used in two slave modes: CPHA = 1, CPOL = 1 and CPHA = 0, CPOL = 0. CPHA and CPOL refer to the control bits that dictate SPI timing in the following MicroConverters® and microprocessors: ADuC812, ADuC824, M68HC11, MC68HC16R1, and MC68HC916R1.
, and CLK). The 24-bit serial data-word must be
CS
goes high but remains in the register if it
CS
is pulsed without CLK and SDI, the part repeats the
Figure 39. Equivalent ESD Digital Input Protection
Rev. F | Page 17 of 32
AD5235 Data Sheet
V
V

DAISY-CHAIN OPERATION

The serial data output pin (SDO) serves two purposes. It can be used to read the contents of the wiper setting and EEMEM values using Instruction 10 and Instruction 9, respectively. The remaining instructions (Instruction 0 to Instruction 8, Instruction 11 to Instruction 15) are valid for daisy-chaining multiple devices in simultaneous operations. Daisy-chaining minimizes the number of port pins required from the controlling IC (see Figure 41). The SDO pin contains an open-drain N-Ch FET that requires a pull-up resistor, if this function is used. As shown in Figure 41, users need to tie the SDO pin of one package to the SDI pin of the next package. Users may need to increase the clock period because the pull-up resistor and the capacitive loading at the SDO-to-SDI interface may require additional time delay between subsequent devices.
When two AD5235s are daisy-chained, 48 bits of data are required. The first 24 bits (formatted 4-bit command, 4-bit address, and 16-bit data) go to U2, and the second 24 bits with the same format go to U1. Keep
clocked into their respective serial registers.
CS
low until all 48 bits are
CS
is then pulled
high to complete the operation.
DD
R
P
2.2k
AD5235
SDI SDO
U2
CLK
CS
02816-040
MOSI
MICRO-
CONTRO LLER
SCLK SS
Figure 41. Daisy-Chain Configuration Using SDO
AD5235
SDI SDO
U1
CLK
CS

TERMINAL VOLTAGE OPERATING RANGE

The positive VDD and negative VSS power supplies of the AD5235 define the boundary conditions for proper 3-terminal digital potentiometer operation. Supply signals present on Terminal A, Ter mi na l B , an d Ter mi na l W th at e xc ee d V the internal forward-biased diodes (see Figure 42).
or VSS are clamped by
DD
DD
The GND pin of the AD5235 is primarily used as a digital ground reference. To minimize the digital ground bounce, the AD5235 ground terminal should be joined remotely to the common ground (see Figure 43). The digital input control signals to the AD5235 must be referenced to the device ground pin (GND) and must satisfy the logic level defined in the Specifications section. An internal level-shift circuit ensures that the common-mode voltage range of the three terminals extends from V
to VDD, regardless of the digital input level.
SS

Power-Up Sequence

Because there are diodes to limit the voltage compliance at Terminal A, Terminal B, and Terminal W (see Figure 42), it is important to power V
and VSS first before applying any
DD
voltage to Terminal A, Terminal B, and Terminal W. Otherwise, the diode is forward-biased such that V
and VSS are powered
DD
unintentionally. For example, applying 5 V across Terminal A and Terminal B prior to V
causes the VDD terminal to exhibit
DD
4.3 V. It is not destructive to the device, but it might affect the rest of the user’s system. The ideal power-up sequence is GND, V
and VSS, digital inputs, and VA, VB, and VW. The order of
DD
powering V long as they are powered after V
, VB, VW, and the digital inputs is not important as
A
and VSS.
DD
Regardless of the power-up sequence and the ramp rates of the power supplies, when V
and VSS are powered, the power-on
DD
preset activates, which restores the EEMEM values to the RDAC registers.

Layout and Power Supply Bypassing

It is a good practice to employ compact, minimum lead-length layout design. The leads to the input should be as direct as possible with a minimum conductor length. Ground paths should have low resistance and low inductance.
Similarly, it is good practice to bypass the power supplies with quality capacitors for optimum stability. Bypass supply leads to the device with 0.01 μF to 0.1 μF disk or chip ceramic capacitors. Also, apply low ESR, 1 μF to 10 μF tantalum or electrolytic capacitors at the supplies to minimize any transient disturbance (see Figure 43).
A
W
B
V
02816-041
SS
Figure 42. Maximum Terminal Voltages Set by V
DD
and V
SS
V
DD
V
SS
+
C1
C3
0.1µF
10µF
+
C4
10µFC20.1µF
Figure 43. Power Supply Bypassing
V
DD
V
SS
AD5235
GND
02816-042
Rev. F | Page 18 of 32
Data Sheet AD5235
MSB
Command Byte 0
Data Byte 1
Data Byte 0
LSB
Restore EEMEM (A0) contents to RDAC (A0)
65 0 1 1 0 0 0 0 A0 X … X X X …
X
Decrement contents of RDAC (A0) by 1,
75 0 1 1 1 X X X X X … X X X …
X
Decrement contents of all RDAC registers by 1,
In Table 6, command bits are C0 to C3, address bits are A0 to A3, Data Bit D0 to Data Bit D9 are applicable to RDAC, and D0 to D15 are applicable to EEMEM.
Table 6. 24-Bit Serial Data-Word
RDAC C3 C2 C1 C0 0 0 0 A0 X X X X X X D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 EEMEM C3 C2 C1 C0 A3 A2 A1 A0 D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Command instruction codes are defined in Table 7.
1, 2, 3
Table 7. Command Operation Truth Table
Command Byte 0 Data Byte 1 Data Byte 0
Command Number
0 0 0 0 0 X X X X X … X X X … X 1 0 0 0 1 0 0 0 A0 X … X X X … X
2 0 0 1 0 0 0 0 A0 X … X X X … X
34 0 0 1 1 A3 A2 A1 A0 D15 … D8 D7 … D0
45 0 1 0 0 0 0 0 A0 X … X X X … X
55 0 1 0 1 X X X X X … X X X … X
B23 B16 B15 B8 B7 B0
C3 C2 C1 C0 A3 A2 A1 A0 X … D9 D8 D7 … D0
Operation
NOP. Do nothing. See
register. See Table 16. Store wiper setting. Store RDAC (A0) setting to
EEMEM (A0). See Store contents of Serial Register Data Byte 0
and Serial Register Data Bytes 1 (total 16 bits) to EEMEM (ADDR). See
Decrement by 6 dB. Right-shift contents of RDAC (A0) register, stop at all 0s.
Decrement all by 6 dB. Right-shift contents of all RDAC registers, stop at all 0s.
Table 19
Table 15.
Table 18.
stop at all 0s.
stop at all 0s.
8 1 0 0 0 0 0 0 0 X … X X X … X
9 1 0 0 1 A3 A2 A1 A0 X … X X X … X
10 1 0 1 0 0 0 0 A0 X … X X X … X
11 1 0 1 1 0 0 0 A0 X … D9 D8 D7 … D0
125 1 1 0 0 0 0 0 A0 X … X X X … X
135 1 1 0 1 X X X X X … X X X … X
145 1 1 1 0 0 0 0 A0 X … X X X … X
155 1 1 1 1 X X X X X … X X X … X
1
The SDO output shifts out the last 24 bits of data clocked into the serial register for daisy-chain operation. Exception: for any instruction following Instruction 9 or
Instruction 10, the selected internal register data is present in Data Byte 0 and Data Byte 1. The instructions following Instruction 9 and Instruction 10 must also be a full 24-bit data-word to completely clock out the contents of the serial register.
2
The RDAC register is a volatile scratchpad register that is refreshed at power-on from the corresponding nonvolatile EEMEM register.
3
Execution of these operations takes place when the CS strobe returns to logic high.
4
Instruction 3 writes two data bytes (16 bits of data) to EEMEM. In the case of Address 0 and Address 1, only the last 10 bits are valid for wiper position setting.
5
The increment, decrement, and shift instructions ignore the contents of the shift register, Data Byte 0 and Data Byte 1.
Reset. Refresh all RDACs with their corresponding EEMEM previously stored values.
Read contents of EEMEM (ADDR) from SDO output in the next frame. See
Read RDAC wiper setting from SDO output in the next frame. See
Write contents of Serial Register Data Byte 0 and Serial Register Data Byte 1 (total 10 bits) to RDAC (A0). See
Increment by 6 dB: Left-shift contents of RDAC (A0), stop at all 1s. See
Increment all by 6 dB. Left-shift contents of all RDAC registers, stop at all 1s.
Increment contents of RDAC (A0) by 1, stop at all 1s. See
Increment contents of all RDAC registers by 1, stop at all 1s.
Table 20.
Table 14.
Table 17.
Table 15.
Table 19.
Rev. F | Page 19 of 32
AD5235 Data Sheet
00 0010 0000
00 0000 1111
11 1111 1111
00 0000 0000
CODE (Fro m 1 t o 1023 by 2.0 × 103)
0
GAIN (dB)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
02816-043
0
–40
–20
–60
–80

ADVANCED CONTROL MODES

The AD5235 digital potentiometer includes a set of user programming features to address the wide number of applications for these universal adjustment devices.
Key programming features include the following:
Scratchpad programming to any desirable values
Nonvolatile memory storage of the scratchpad RDAC
register value in the EEMEM register
Increment and decrement instructions for the RDAC
wiper register
Left and right bit shift of the RDAC wiper register to
achieve ±6 dB level changes
26 extra bytes of user-addressable nonvolatile memory

Linear Increment and Decrement Instructions

The increment and decrement instructions (Instruction 14, Instruction 15, Instruction 6, and Instruction 7) are useful for linear step adjustment applications. These commands simplify microcontroller software coding by allowing the controller to send just an increment or decrement command to the device. The adjustment can be individual or in a ganged potentiometer arrangement where both wiper positions are changed at the same time.
For an increment command, executing Instruction 14 automatically moves the wiper to the next resistance segment position. The master increment command, Instruction 15, moves all resistor wipers up by one position.

Logarithmic Taper Mode Adjustment

Four programming instructions produce logarithmic taper increment and decrement of the wiper position control by an individual potentiometer or by a ganged potentiometer arrangement where both wiper positions are changed at the same time. The 6 dB increment is activated by Instruction 12 and Instruction 13, and the 6 dB decrement is activated by Instruction 4 and Instruction 5. For example, starting with the wiper connected to Terminal B, executing 11 increment instructions (Command Instruction 12) moves the wiper in 6 dB steps from 0% of the R position of the AD5235 10-bit potentiometer. When the wiper position is near the maximum setting, the last 6 dB increment instruction causes the wiper to go to the full-scale 1023 code position. Further 6 dB per increment instructions do not change the wiper position beyond its full scale (see Tabl e 8).
The 6 dB step increments and 6 dB step decrements are achieved by shifting the bit internally to the left or right, respectively. The following information explains the nonideal ±6 dB step adjustment under certain conditions. Table 8 illustrates the operation of the shifting function on the RDAC register data bits. Each table row represents a successive shift operation. Note that the left-shift 12 and 13 instructions were modified such that, if the data in the RDAC register is equal to zero and the data is shifted left,
(Terminal B) position to 100% of the RAB
AB
Rev. F | Page 20 of 32
the RDAC register is then set to Code 1. Similarly, if the data in the RDAC register is greater than or equal to midscale and the data is shifted left, then the data in the RDAC register is automatically set to full scale. This makes the left-shift function as ideal a logarithmic adjustment as possible.
The Right-Shift 4 instruction and Right-Shift 5 instruction are ideal only if the LSB is 0 (ideal logarithmic = no error). If the LSB is 1, the right-shift function generates a linear half-LSB error, which translates to a number-of-bits dependent logarithmic error, as shown in Figure 44. Figure 44 shows the error of the odd numbers of bits for the AD5235.
Table 8. Detail Left-Shift and Right-Shift Functions for 6 dB Step Increment and Decrement
Left-Shift (+6 dB/Step) Right-Shift(–6 dB/Step)
00 0000 0000 11 1111 1111 00 0000 0001 01 1111 1111 00 0000 0010 00 1111 1111 00 0000 0100 00 0111 1111 00 0000 1000 00 0011 1111 00 0001 0000 00 0001 1111
00 0100 0000 00 0000 0111 00 1000 0000 00 0000 0011 01 0000 0000 00 0000 0001 10 0000 0000 00 0000 0000
11 1111 1111 00 0000 0000
Actual conformance to a logarithmic curve between the data contents in the RDAC register and the wiper position for each Right-Shift 4 command and Right-Shift 5 command execution contains an error only for odd numbers of bits. Even numbers of bits are ideal. Figure 44 shows plots of log error [20 × log
10
(error/code)] for the AD5235. For example, Code 3 log error = 20 × log
(0.5/3) = −15.56 dB, which is the worst case. The log error plot
10
is more significant at the lower codes (see Figure 44).
Figure 44. Log Error Conformance for Odd Numbers of Bits Only
(Even Numbers of Bits Are Ideal)
Data Sheet AD5235
SW
(1)
SW
(0)
SW
B
B
R
S
R
S
SW
A
SW(2
N
1)
A
W
SW(2
N
2)
RDAC
WIPER
REGISTER
AND
DECODER
R
S
= RAB/2
N
R
S
DIGITAL CIRCUITRY OMITTED FOR CLARITY
02816-044
Device Resolution
25 kΩ
250 kΩ
Using CS to Re-Execute a Previous Command
Another subtle feature of the AD5235 is that a subsequent CS strobe, without clock and data, repeats a previous command.

Using Additional Internal Nonvolatile EEMEM

The AD5235 contains additional user EEMEM registers for storing any 16-bit data such as memory data for other components, look-up tables, or system identification information. Table 9 pro­vides an address map of the internal storage registers shown in the functional block diagram (see Figure 1) as EEMEM1, EEMEM2, and 26 bytes (13 addresses × 2 bytes each) of User EEMEM.
Table 9. EEMEM Address Map
EEMEM No. Address EEMEM Content for …
1 0000 RDAC11 2 0001 RDAC2 3 0010 USER12 4 0011 USER2 … … 15 1110 USER13 16 1111 R
1
RDAC data stored in EEMEM locations is transferred to the corresponding
RDAC register at power-on, or when Instruction 1, Instruction 8, and executed.
2
USERx are internal nonvolatile EEMEM registers available to store and
retrieve constants and other 16-bit information using Instruction 3 and Instruction 9, respectively.
3
Read only.
tolerance3
AB1
PR
are

Calculating Actual End-to-End Terminal Resistance

The resistance tolerance is stored in the EEMEM register during factory testing. The actual end-to-end resistance can, therefore, be calculated, which is valuable for calibration, tolerance matching, and precision applications. Note that this value is read only and the R
matches with R
AB2
, typically 0.1%.
AB1
The resistance tolerance in percentage is contained in the last 16 bits of data in EEMEM Register 15. The format is the sign magnitude binary format with the MSB designate for sign (0 = negative and 1 = positive), the next 7 MSB designate the integer number, and the 8 LSB designate the decimal number (see Table 11).
For example, if R shows XXXX XXXX 1001 1100 0000 1111, R calculated as follows:
MSB: 1 = positive Next 7 LSB: 001 1100 = 28 8 LSB: 0000 1111 = 15 × 2 % tolerance = 28.06% Therefore, R

RDAC STRUCTURE

The patent-pending RDAC contains multiple strings of equal resistor segments with an array of analog switches that acts as the wiper connection. The number of positions is the resolution of the device. The AD5235 has 1024 connection points, allowing it to provide better than 0.1% setability resolution. Figure 45 shows an equivalent structure of the connections among the three terminals of the RDAC. The SW the switches, SW(0) to SW(2 on the resistance position decoded from the data bits. Because the switch is not ideal, there is a 50 Ω wiper resistance, R Wiper resistance is a function of supply voltage and temperature. The lower the supply voltage or the higher the temperature, the higher the resulting wiper resistance. Users should be aware of the wiper resistance dynamics, if accurate prediction of the output resistance is needed.
= 250 kΩ and the data in the SDO
AB _RATE D
AB_ACTUAL
−8
= 0.06
AB_ACTUAL
= 320.15 kΩ
and SWB are always on, while
A
N
− 1), are on one at a time, depending
Figure 45. Equivalent RDAC Structure
can be
.
W
Table 11. Calculating End-to-End Terminal Resistance
Bit D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0
Sign Mag Sign 2
7 Bits for Integer Number
Table 10. Nominal Individual Segment Resistor Values
6
25 24 23 22 21 20
Rev. F | Page 21 of 32
1024-Step 24.4 244
.
2−1 2−2 2−3 2−4 2−5 2−6 2−7 2−8
Decimal
Point
8 Bits for Decimal Number
AD5235 Data Sheet
CODE (Decimal )
100
75
0
0 1023256
R
WA
(D), R
WB
(D) (% R
WF
)
512
768
50
25
R
WA
R
WB
02816-045
W
AB
WB
RR
D
DR +×=
1024
)(
W
ABWA
RR
D
DR +×
=
1024
1024
)(

PROGRAMMING THE VARIABLE RESISTOR

Rheostat Operation

The nominal resistance of the RDAC between Terminal A and Terminal B, R 1024 positions (10-bit resolution). The final digits of the part number determine the nominal resistance value, for example, 25 kΩ = 24.4 Ω; 250 kΩ = 244 Ω.
The 10-bit data-word in the RDAC latch is decoded to select one of the 1024 possible settings. The following description provides the calculation of resistance, R part. The first connection of the wiper starts at Terminal B for Data 0x000. R it is independent of the nominal resistance. The second connection is the first tap point where R for Data 0x001. The third connection is the next tap point representing R and so on. Each LSB data value increase moves the wiper up the resistor ladder until the last tap point is reached at R 25006 Ω. See Figure 45 for a simplified diagram of the equivalent RDAC circuit. When R floating or tied to the wiper.
, is available with 25 kΩ and 250 kΩ with
AB
, at different codes of a 25 kΩ
WB
(0) is 30 Ω because of the wiper resistance, and
WB
(1) becomes 24.4 Ω + 30 Ω = 54.4 Ω
WB
(2) = 48.8 Ω + 30 Ω = 78.8 Ω for Data 0x002,
WB
(1023) =
WB
is used, Terminal A can be left
WB
Table 12. R
D (Dec) RWB(D) (Ω) Output State
1023 25,006 Full scale 512 12,530 Midscale 1 54.4 1 LSB 0 30 Zero scale (wiper contact resistor)
Note that, in the zero-scale condition, a finite wiper resistance of 50 Ω is present. Care should be taken to limit the current flow between W and B in this state to no more than 20 mA to avoid degradation or possible destruction of the internal switches.
Like the mechanical potentiometer that the RDAC replaces, the AD5235 part is symmetrical. The resistance between Wiper W and Terminal A also produces a digitally controlled complementary resistance, R programmability of the various terminal connections. When R is used, Terminal B can be left floating or tied to the wiper. Setting the resistance value for R of resistance and decreases as the data loaded in the latch is increased in value.
The general transfer equation for this operation is
(D) at Selected Codes for RAB = 25 kΩ
WB
. Figure 46 shows the symmetrical
WA
starts at a maximum value
WA
(2)
WA
For example, the output resistance values in Table 13 are set for the given RDAC latch codes (applies to R
= 25 kΩ digital
AB
potentiometers).
Table 13. R
(D) at Selected Codes for R
WA
= 25 kΩ
AB
D (Dec) RWA(D) (Ω) Output State
1023 54.4 Full scale 512 12,530 Midscale 1 25,006 1 LSB 0 25,030 Zero scale (wiper contact resistance)
The typical distribution of RAB from channel to channel is
Figure 46. R
(D) and RWB(D) vs. Decimal Code
WA
The general equation that determines the programmed output resistance between Terminal Bx and Terminal Wx is
±0.2% within the same package. Device-to-device matching is process lot dependent upon the worst case of ±30% variation. However, the change in R
with temperature has a 35 ppm/°C
AB
temperature coefficient.

PROGRAMMING THE POTENTIOMETER DIVIDER

(1)
where: D is the decimal equivalent of the data contained in the RDAC register.
R
is the nominal resistance between Terminal A and Termi na l B.
AB
R
is the wiper resistance.
W
For example, the output resistance values in Table 12 are set for the given RDAC latch codes (applies to R potentiometers).
= 25 kΩ digital
AB
Rev. F | Page 22 of 32

Voltage Output Operation

The digital potentiometer can be configured to generate an output voltage at the wiper terminal that is proportional to the input voltages applied to Terminal A and Terminal B. For example, connecting Terminal A to 5 V and Terminal B to ground produces an output voltage at the wiper that can be any value from 0 V to 5 V. Each LSB of voltage is equal to the voltage applied across Terminal A to Terminal B divided by the 2
N
position resolution of the potentiometer divider.
Data Sheet AD5235
B
AB
W
VV
D
DV +×=
1024
)(
0x92XXXX
0xXXXXXX
Prepares data read from USER1
0xB00200
0xXXXXXX
Writes RDAC1 to midscale.
0xXXXXXX
0xA003FF
Reads back full-scale value from SDO.
Because the AD5235 can also be supplied by dual supplies, the general equation defining the output voltage at V
with respect
W
to ground for any given input voltages applied to Terminal A and Terminal B is
(3)
Equation 3 assumes that V
is buffered so that the effect of wiper
W
resistance is minimized. Operation of the digital potentiometer in divider mode results in more accurate operation over temperature. Here, the output voltage is dependent on the ratio of the internal resistors and not the absolute value; therefore, the drift improves to 15 ppm/°C. There is no voltage polarity restriction between Terminal A, Terminal B, and Terminal W as long as the terminal voltage (V
) stays within VSS < V
TERM
TERM
< VDD.

PROGRAMMING EXAMPLES

The following programming examples illustrate a typical sequence of events for various features of the AD5235. See Tab l e 7 for the instructions and data-word format. The instruction numbers, addresses, and data appearing at the SDI and SDO pins are in hexadecimal format.
Table 14. Scratchpad Programming
SDI SDO Action
0xB00100 0xXXXXXX Writes Data 0x100 into RDAC1 register,
Wiper W1 moves to 1/4 full-scale position.
0xB10200 0xB00100 Loads Data 0x200 into RDAC2 register,
Wiper W2 moves to 1/2 full-scale position.
Table 15. Incrementing RDAC Followed by Storing the Wiper Setting to EEMEM
SDI SDO Action
0xB00100 0xXXXXXX Writes Data 0x100 into RDAC1
register, Wiper W1 moves to 1/4 full­scale position.
0xE0XXXX 0xB00100 Increments RDAC1 register by one to
0x101.
0xE0XXXX 0xE0XXXX Increments RDAC1 register by one to
0x102. Continue until desired wiper position is reached.
0x20XXXX 0xXXXXXX Stores RDAC2 register data into
EEMEM1. Optionally, tie protect EEMEM values.
The EEMEM values for the RDACs can be restored by power­on, by strobing the
PR
pin, or by the two commands shown in
Table 16.
to GND to
WP
Table 16. Restoring the EEMEM Values to RDAC Registers
SDI SDO Action
0x10XXXX 0xXXXXXX Restores the EEMEM1 value to the
RDAC1 register.
Table 17. Using Left-Shift by One to Increment 6 dB Steps
SDI SDO Action
0xC0XXXX 0xXXXXXX Moves Wiper 1 to double the
present data contained in the RDAC1 register.
0xC1XXXX 0xC0XXXX Moves Wiper 2 to double the
present data contained in the RDAC2 register.
Table 18. Storing Additional User Data in EEMEM
SDI SDO Action
0x32AAAA 0xXXXXXX Stores Data 0xAAAA in the extra
EEMEM location USER1. (Allowable to address in 13 locations with a maximum of 16 bits of data.)
0x335555 0x32AAAA Stores Data 0x5555 in the extra
EEMEM location USER2. (Allowable to address in 13 locations with a maximum of 16 bits of data.)
Table 19. Reading Back Data from Memory Locations
SDI SDO Action
EEMEM location.
0x00XXXX 0x92AAAA NOP Instruction 0 sends a 24-bit word
out of SDO, where the last 16 bits contain the contents in USER1 EEMEM location.
Table 20. Reading Back Wiper Settings
SDI SDO Action
0xC0XXXX 0xB00200 Doubles RDAC1 from midscale to full
scale.
0xA0XXXX 0xC0XXXX Prepares reading wiper setting from
RDAC1 register.

EVAL-AD5235SDZ EVALUATION KIT

Analog Devices, Inc., offers a user-friendly EVA L-AD5235SDZ evaluation kit that can be controlled by a PC in conjunction with the SDP platform. The driving program is self-contained; no programming languages or skills are needed.
Rev. F | Page 23 of 32
AD5235 Data Sheet
±2.5V p-p
AD5235
V
SS
GND
SDI
CLK
SS
SCLK
MOSI
GND
V
DD
MICRO-
CONTROLLER
±1.25V p-p
V
DD
+2.5V
–2.5V
CS
D = MIDSCALE
A
W
B
02816-046
U1
V
O
R2
02816-047
250k
V
I
R1
47k
C1
11pF
W
B A
C2
2.2pF
2RR
V
O
A1
V+
V–
15V
0V TO 15V
02816-048
C
A
B
W
AD5235
5V
AD8601
V+
V–
5V
V
O
A1
02816-049
AD1582
GND
V
IN
V
OUT
3
2
5V
U11
AD5235
A
B
W

APPLICATIONS INFORMATION

BIPOLAR OPERATION FROM DUAL SUPPLIES

The AD5235 can be operated from ±2.5 V dual supplies, which enable control of ground referenced ac signals or bipolar operation. AC signals as high as V
and VSS can be applied directly across
DD
Terminal A to Terminal B with the output taken from Termin al W. See Figure 47 for a typical circuit connection.
Figure 47. Bipolar Operation from Dual Supplies

GAIN CONTROL COMPENSATION

A digital potentiometer is commonly used in gain control such as the noninverting gain amplifier shown in Figure 48.
Alternatively, it avoids the ringing or oscillation at the worst case. For critical applications, find C2 empirically to suit the oscillation. In general, C2 in the range of a few picofarads to no more than a few tenths of picofarads is usually adequate for the compensation.
Similarly, W and A terminal capacitances are connected to the output (not shown); their effect at this node is less significant and the compensation can be avoided in most cases.

HIGH VOLTAGE OPERATION

The digital potentiometer can be placed directly in the feedback or input path of an op amp for gain control, provided that the voltage across Ter m in al A to Te rm in a l B, Terminal W to Terminal A or Terminal W to Terminal B does not exceed |5 V|. When high voltage gain is needed, set a fixed gain in the op amp and let the digital potentiometer control the adjustable input. Figure 49 shows a simple implementation.
Figure 48. Typical Noninverting Gain Amplifier
When the RDAC B terminal parasitic capacitance is connected to the op amp noninverting node, it introduces a zero for the 1/β term with 20 dB/dec, whereas a typical op amp gain bandwidth product (GBP) has −20 dB/dec characteristics. A large R2 and finite C1 can cause the frequency of this zero to fall well below the crossover frequency. Therefore, the rate of closure becomes 40 dB/dec, and the system has a 0° phase margin at the crossover frequency. If an input is a rectangular pulse or step function, the output can ring or oscillate. Similarly, it is also likely to ring when switching between two gain values; this is equivalent to a stop change at the input.
Depending on the op amp GBP, reducing the feedback resistor might extend the frequency of the zero far enough to overcome the problem. A better approach is to include a compensation capacitor, C2, to cancel the effect caused by C1. Optimum compensation occurs when R1 × C1 = R2 × C2. This is not an option because of the variation of R2. As a result, one can use the previous relationship and scale C2 as if R2 were at its maximum value. Doing this might overcompensate and compromise the performance when R2 is set at low values.
Similarly, a compensation capacitor, C, may be needed to dampen the potential ringing when the digital potentiometer changes steps. This effect is prominent when stray capacitance at the inverted node is augmented by a large feedback resistor. Typically, a picofarad Capacitor C is adequate to combat the problem.
O
DAC
For DAC operation (see Figure 50), it is common to buffer the output of the digital potentiometer unless the load is much larger than R conversion and can drive heavier loads.
Rev. F | Page 24 of 32
Figure 49. 15 V Voltage Span Control
. The buffer serves the purpose of impedance
WB
Figure 50. Unipolar 10-Bit DAC
Data Sheet AD5235
I
V
V

BIPOLAR PROGRAMMABLE GAIN AMPLIFIER

For applications requiring bipolar gain, Figure 51 shows one implementation. Digital Potentiometer U1 sets the adjustment range; the wiper voltage (V between V
and −KVI at a given U2 setting. Configure OP2177
I
) can, therefore, be programmed
W2
(A2) as a noninverting amplifier that yields a transfer function of
V
O
V
K is the ratio of R
where
AD5235
V
I
R2
KK
1 (4)
R1
U2
A2
A1
AD5235
U1
Figure 51. Bipolar Programmable Gain Amplifier
W1
B2
B1
W1
OP2177
A1
D2
1024
WB1/RWA 1
V
DD
V+
V–
V
SS
)1(
 
set by U1.
OP2177
A2
–KV
I
DD
V+
V–
R2
V
SS
R1
V
O
C
02816-050
In the simpler (and much more usual) case where K = 1, VO is simplified to
V
1
1 (5)
O
R1
R2
D
22
1024
V
I
Table 21 shows the result of adjusting D2, with OP2177 (A2) configured as a unity gain, a gain of 2, and a gain of 10. The result is a bipolar amplifier with linearly programmable gain and 1024-step resolution.
Table 21. Result of Bipolar Gain Amplifier
D2 R1 = ∞, R2 = 0 R1 = R2 R2 = 9 × R1
0 −1 −2 −10 256 −0.5 −1 −5 512 0 0 0 768 0.5 1 5 1023 0.992 1.984 9.92

10-BIT BIPOLAR DAC

If the circuit in Figure 51 is changed with the input taken from a precision reference, U1 is set to midscale, and AD8552 (A2) is configured as a buffer, a 10-bit bipolar DAC can be realized (as shown in Figure 52). Compared to the conventional DAC, this circuit offers comparable resolution but not the precision because of the wiper resistance effects. Degradation of the nonlinearity and temperature coefficient is prominent near the low values of the adjustment range. Alternatively, this circuit offers a unique nonvolatile memory feature that, in some cases, outweighs any shortfalls in precision.
Without consideration of the wiper resistance, the output of this circuit is approximately
D
22
+2.5V
REF
1
V
(6)
REF
+2.5
U2
W2
B2
A1
W1 U1
A2
B1
AD8552
A1
+2.5V
V+
V–
–2.5V
–2.5V
V+
AD8552
V–
A2
–2.5V
REF
U1 = U2 = AD5 2 35
V
O
V
O
1024
V
I
26U3 VINV
OUT
5
TRIM
GND
ADR421
U1 = MIDSCALE
Figure 52. 10-Bit Bipolar DAC

PROGRAMMABLE VOLTAGE SOURCE WITH BOOSTED OUTPUT

For applications that require high current adjustment, such as a laser diode driver or tunable laser, a boosted voltage source can be considered (see Figure 53).
V
I
AD5235
A
W
B
U2
AD8601
2N7002
SIGNAL
V+
V–
Figure 53. Programmable Booster Voltage Source
In this circuit, the inverting input of the op amp forces VO to be equal to the wiper voltage set by the digital potentiometer. The load current is then delivered by the supply via the N-Ch FET N (see Figure 53). N
− VO) × IL power. This circuit can source a 100 mA maximum
(V
I
power handling must be adequate to dissipate
1
with a 5 V supply.
For precision applications, a voltage reference, such as ADR421,
ADR03, or ADR370, can be applied at Terminal A of the digital
potentiometer.
LD
V
O
R
BIAS
C
C
I
L
02816-052
1
02816-051
Rev. F | Page 25 of 32
AD5235 Data Sheet
V+
V–
OP1177
U2
V
S
SLEEP
REF191
GND
OUTPUT
3
2
4
6
U1
C1
1µF
AD5235
W
A
B
R
S
102Ω
R
L
100Ω
V
L
I
L
+5V
–2.048V TO V
L
–5V
0V TO (2. 048V + VL)
+5V
+
02861-053
1024×
×
=
S
REF
L
R
DV
I
R2B
R2BR2A
+
–15V
OP2177
V+
V–
+15V
+
C1
10pF
R2
15k
R1
150k
R2B 50
R
L
500
V
L
R2A
14.95k
R1
150k
I
L
OP2177
V+
V–
+15V
+
–15V
A1
AD5235
A
B
W
+2.5V
–2.5V
A2
02816-054
)(
)(
R2BR2AR1'R2'R1
R2AR1R2BR1'
+
+

PROGRAMMABLE CURRENT SOURCE

A programmable current source can be implemented with the circuit shown in Figure 54.

PROGRAMMABLE BIDIRECTIONAL CURRENT SOURCE

For applications that require bidirectional current control or higher voltage compliance, a Howland current pump can be a solution (see Figure 55). If the resistors are matched, the load current is
Figure 54. Programmable Current Source
The REF191 is a unique low supply headroom and high current handling precision reference that can deliver 20 mA at 2.048 V. The load current is simply the voltage across Term i na l W to Terminal B of the digital potentiometer divided by R
.
S
(7)
The circuit is simple but be aware that there are two issues. First, dual-supply op amps are ideal because the ground potential of REF191 can swing from −2.048 V at zero scale to V
at full
L
scale of the potentiometer setting. Although the circuit works under single supply, the programmable resolution of the system is reduced by half. Second, the voltage compliance at V
is
L
limited to 2.5 V, or equivalently, a 125 Ω load. When higher voltage compliance is needed, consider digital potentiometers, such as, AD5260, AD5280, and AD7376. Figure 55 shows an alternate circuit for high voltage compliance.
To achieve higher current, such as when driving a high power LED, replace U1 with an LDO, reduce R
, and add a resistor in
S
series with the A terminal of the digital potentiometer. This limits the current of the potentiometer and increases the current adjustment resolution.
I ×
R1
=
(8)
V
WL
Figure 55. Programmable Bidirectional Current Source
R2B, in theory, can be made as small as necessary to achieve the current needed within the A2 output current driving capability. In this circuit, OP2177 delivers ±5 mA in either direction, and the voltage compliance approaches 15 V. Without the additions of C1 and C2, the output impedance (looking into V
Z
=
O
Z
can be infinite, if Resistors R1' and R2' match precisely with
O
R1 and R2A + R2B,
respectively, which is desirable. On the other
hand, if the resistors do not match, Z
(9)
can be negative and cause
O
) can be
L
oscillation. As a result, C1, in the range of a few picofarad, is needed to prevent oscillation from the negative impedance.
Rev. F | Page 26 of 32
Data Sheet AD5235
A
B
V
I
AD8601
+2.5V
V
O
ADJUSTED
CONCURRENTLY
–2.5V
V+
V–
W
R
R2
02816-055
R1
A
B
W
R
C1
C2
U1
ω
C2C1R2R1
O
1
=ω
C2R2
1
C1R1
+
1
D1
02816-056
D2
OP1177
V+
V–
+2.5V
+
–2.5V
V
O
U1
R2A
2.1k
R2B
10k
B A
W
R1 1k
AMPLITUDE
ADJUSTMENT
R = R' = AD5235 R2B = AD5231 D1 = D2 = 1N4148
R'
25k A
B
W
C'
VP
R
25k
A
B
W
C
2.2nF
FREQUENCY
ADJUSTMENT
2.2nF
RC
O
1
=ω
RC
f
O
π=2
1
W
ABWA
RR
D
DR +×
=
1024
1024
)(
DD
O
VR2BIV +=
3
2

PROGRAMMABLE LOW-PASS FILTER

In analog-to-digital conversions (ADCs), it is common to include an antialiasing filter to band limit the sampling signal. Therefore, the dual-channel AD5235 can be used to construct a second-order Sallen-Key low-pass filter, as shown in Figure 56.
At the resonant frequency, f the positive feedback causes the circuit to oscillate. With R = R
C = C
', and R2 = R2A /(R2B + R
or
, the overall phase shift is zero, and
O
), the oscillation frequency is
DIODE
(13)
',
Figure 56. Sallen-Key Low-Pass Filter
The design equations are
V
O
=
V
I
S
2
f
ω
f
2
S
+
Q
(10)
2
ω+
f
(11)
Q =
(12)
First, users should select convenient values for the capacitors. To achieve maximally flat bandwidth, where Q = 0.707, let C1 be twice the size of C2 and let R1 equal R2. As a result, the user can adjust R1 and R2 concurrently to the same setting to achieve the desirable bandwidth.

PROGRAMMABLE OSCILLATOR

In a classic Wien bridge oscillator, the Wien network (R||C, R'C') provides positive feedback, whereas R1 and R2 provide negative feedback (see Figure 57).
where R is equal to R
such that :
WA
(14)
At resonance, setting R2/R1 = 2 balances the bridge. In practice, R2/R1 should be set slightly larger than 2 to ensure that the oscillation can start. On the other hand, the alternate turn-on of the diodes, D1 and D2, ensures that R2/R1 is smaller than 2, momentarily stabilizing the oscillation.
When the frequency is set, the oscillation amplitude can be turned by R2B because
(15)
V
, ID, and VD are interdependent variables. With proper
O
selection of R2B, an equilibrium is reached such that V
O
converges. R2B can be in series with a discrete resistor to increase the amplitude, but the total resistance cannot be too large to saturate the output.
In Figure 56 and Figure 57, the frequency tuning requires that both RDACs be adjusted concurrently to the same settings. Because the two channels might be adjusted one at a time, an intermediate state occurs that might not be acceptable for some applications. Of course, the increment/decrement instructions (Instruction 5, Instruction 7, Instruction 13, and Instruction 15) can all be used. Different devices can also be used in daisy-chain mode so that parts can be programmed to the same settings simultaneously.
Figure 57. Programmable Oscillator with Amplitude Control
Rev. F | Page 27 of 32
AD5235 Data Sheet
CS
CLK
SDI
W1 B1
EEMEM
ADN2841
PSET
ERSET
IMODP
IBIAS
02816-057
IMPD
DATAP
DATAN
CLKP
CLKN
CLKN
CLKP DATAP DATAN
W2 B2
EEMEM
CONTROL
AD5235
V
CC
V
CC
A1
A2
RDAC1
RDAC2
A1
B1
W1
W2
A2
B2
02816-058
DD
AB
AB
W
V
D
R2RR3
R2R
DV ××
+
=
1024//
)//(
)(
R1
R2
A
B
W
0
02816-059
R3
V
DD
A1
B1
W1
R
02816-060
RRD
RD
R
AB
AB
QUIVALENT
×++×
+×
=
1024200,51
200,51
E

OPTICAL TRANSMITTER CALIBRATION WITH ADN2841

The AD5235, together with the multirate 2.7 Gbps laser diode driver, ADN2841, forms an optical supervisory system in which the dual digital potentiometers can be used to set the laser average optical power and extinction ratio (see Figure 58). The AD5235 is particularly suited for the optical parameter settings because of its high resolution and superior temperature coefficient characteristics.

RESISTANCE SCALING

The AD5235 offers 25 kΩ or 250 kΩ nominal resistance. When users need lower resistance but must maintain the number of adjustment steps, they can parallel multiple devices. For example, Figure 59 shows a simple scheme of paralleling two channels of RDACs. To adjust half the resistance linearly per step, program both RDACs concurrently with the same settings.
Figure 58. Optical Supervisory System
The ADN2841 is a 2.7 Gbps laser diode driver that uses a unique control algorithm to manage the average power and extinction ratio of the laser after its initial factory calibration. The ADN2841 stabilizes the data transmission of the laser by continuously monitoring its optical power and correcting the variations caused by temperature and the degradation of the laser over time. In the ADN2841, the IMPD monitors the laser diode current. Through its dual-loop power and extinction ratio control calibrated by the dual RDACs of the AD5235, the internal driver controls the bias current, IBIAS, and consequently the average power. It also regulates the modulation current, IMODP, by changing the modulation current linearly with slope efficiency. Therefore, any changes in the laser threshold current or slope efficiency are compensated for. As a result, the optical supervisory system minimizes the laser characterization efforts and, therefore, enables designers to apply comparable lasers from multiple sources.
Figure 59. Reduce Resistance by Half with Linear Adjustment Characteristics
In voltage divider mode, by paralleling a discrete resistor, as shown in Figure 60, a proportionately lower voltage appears at Terminal A to Terminal B. This translates into a finer degree of precision because the step size at Terminal W is smaller. The voltage can be found as
(16)
Figure 60. Lowering the Nominal Resistance
Figure 59 and Figure 60 show that the digital potentiometers change steps linearly. Alternatively, pseudo log taper adjustment is usually preferred in applications such as audio control. Figure 61 shows another type of resistance scaling. In this configuration, the smaller the R2 with respect to R
, the more the pseudo log
AB
taper characteristic of the circuit behaves.
Figure 61. Resistor Scaling with Pseudo Log Adjustment Characteristics
The equation is approximated as
(17)
Rev. F | Page 28 of 32
Users should also be aware of the need for tolerance matching as well as for temperature coefficient matching of the components.
Data Sheet AD5235
AD8601
+
V
i
U1
V
O
C1
AB
W
R2
R1*
*REPLACED WITH ANOTHER
CHANNEL OF RDAC
02816-061
AD8601
+
V
i
U1
02816-062
V
O
C1
A B
R
W
A
RDAC 25k
W
80pF
C
B
11pF
C
A
11pF
02816-063
B

RESISTANCE TOLERANCE, DRIFT, AND TEMPERATURE COEFFICIENT MISMATCH CONSIDERATIONS

In rheostat mode operation, such as gain control, the tolerance mismatch between the digital potentiometer and the discrete resistor can cause repeatability issues among various systems (see Figure 62). Because of the inherent matching of the silicon process, it is practical to apply the dual-channel device in this type of application. As such, R1 can be replaced by one of the channels of the digital potentiometer and programmed to a specific value. R2 can be used for the adjustable gain. Although it adds cost, this approach minimizes the tolerance and temperature coefficient mismatch between R1 and R2. This approach also tracks the resistance drift over time. As a result, these less than ideal parameters become less sensitive to system variations.
Figure 62. Linear Gain Control with Tracking Resistance Tolerance,
Drift, and Temperature Coefficient
Note that the circuit in Figure 63 can track tolerance, temperature coefficient, and drift in this particular application. The characteristic of the transfer function is, however, a pseudo log rather than a linear gain function.

RDAC CIRCUIT SIMULATION MODEL

The internal parasitic capacitances and the external capacitive loads dominate the ac characteristics of the RDACs. Configured as a potentiometer divider, the −3 dB bandwidth of the AD5235 (25 kΩ resistor) measures 125 kHz at half scale. Figure 17 provides the large signal bode plot characteristics of the two available resistor versions, 25 kΩ and 250 kΩ. A parasitic simulation model is shown in Figure 64.
Figure 64. RDAC Circuit Simulation Model (RDAC = 25 kΩ)
The following code provides a macro model net list for the 25 kΩ RDAC:
.PARAM D = 1024, RDAC = 25E3 * .SUBCKT DPOT (A, W, B) * CA A 0 11E-12 RWA A W {(1-D/1024)* RDAC + 30} CW W 0 80E-12 RWB W B {D/1024 * RDAC + 30} CB B 0 11E-12 * .ENDS DPOT
Figure 63. Nonline ar Gain Control with Tracking Resistanc e Tolerance and Drif t
Rev. F | Page 29 of 32
AD5235 Data Sheet
16
9
81
PIN 1
SEATING PLANE
8° 0°
4.50
4.40
4.30
6.40
BSC
5.10
5.00
4.90
0.65
BSC
0.15
0.05
1.20 MAX
0.20
0.09
0.75
0.60
0.45
0.30
0.19
COPLANARITY
0.10
COMPLI ANT TO JEDEC STANDARDS MO-153-AB
AD5235BRUZ250-R7
250
−40°C to +85°C
16-Lead TSSOP
RU-16
1,000
5235B250
EVAL-AD5235SDZ
Evaluation Board
1

OUTLINE DIMENSIONS

Figure 65. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters

ORDERING GUIDE

Temperature Range
Model
1, 2
RAB (kΩ)
AD5235BRUZ25 25 −40°C to +85°C 16-Lead TSSOP RU-16 96 5235B25 AD5235BRUZ25-RL7 25 −40°C to +85°C 16-Lead TSSOP RU-16 1,000 5235B25 AD5235BRUZ250 250 −40°C to +85°C 16-Lead TSSOP RU-16 96 5235B250
1
Z = RoHS Compliant Part.
2
The evaluation board is shipped with the 25 kΩ RAB resistor option; however, the board is compatible with all available resistor value options.
3
Line 1 contains the ADI logo followed by the date code, YYWW. Line 2 contains the model number followed by the end-to-end resistance value (note: D = 250 kΩ).
—OR— Line 1 contains the model number. Line 2 contains the ADI logo followed by the end-to-end resistance value. Line 3 contains the date code, YYWW.
Package Description
Package Option
Ordering Quantity Branding3
Rev. F | Page 30 of 32
Data Sheet AD5235
NOTES
Rev. F | Page 31 of 32
AD5235 Data Sheet
©2004–2012 Analog Devices, Inc. All rights reserved. Trademarks and
NOTES
registered trademarks are the property of their respective owners. D02816-0-6/12(F)
Rev. F | Page 32 of 32
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