ANALOG DEVICES AD5175 Service Manual

Single-Channel, 1024-Position, Digital Rheostat
V
W
with I
2
C Interface and 50-TP Memory

FEATURES

Single-channel, 1024-position resolution 10 kΩ nominal resistance 50-times programmable (50-TP) wiper memory Rheostat mode temperature coefficient: 35 ppm/°C
2.7 V to 5.5 V single-supply operation ±2.5 V to ±2.75 V dual-supply operation for ac or bipolar
operations
2
I
C-compatible interface Wiper setting and memory readback Power on refreshed from memory Resistor tolerance stored in memory Thin LFCSP, 10-lead, 3 mm × 3 mm × 0.8 mm package Compact MSOP, 10-lead 3 mm × 4.9 mm × 1.1 mm package

APPLICATIONS

Mechanical rheostat replacements Op-amp: variable gain control Instrumentation: gain, offset adjustment Programmable voltage to current conversions Programmable filters, delays, time constants Programmable power supply Sensor calibration
SCL
SDA
ADDR
RESET
AD5175

FUNCTIONAL BLOCK DIAGRAM

DD
POWER-ON
RESET
I2C
SERIAL
INTERFACE
V
SS
REGISTER
10
50-TP
MEMORY
BLOCK
EXT_CAP GND
Figure 1.
AD5175
RDAC
A
08719-001

GENERAL DESCRIPTION

The AD5175 is a single-channel, 1024-position digital rheostat that combines industry leading variable resistor performance with nonvolatile memory (NVM) in a compact package.
This device supports both dual-supply operation at ±2.5 V to ±2.75 V and single-supply operation at 2.7 V to 5.5 V, and offers 50-times programmable (50-TP) memory.
The AD5175 device wiper settings are controllable through the
2
I
C–compatible digital interface. Unlimited adjustments are allowed before programming the resistance value into the 50-TP memory. The AD5175 does not require any external
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
voltage supply to facilitate fuse blow and there are 50 oppor­tunities for permanent programming. During 50-TP activation, a permanent blow fuse command freezes the resistance position (analogous to placing epoxy on a mechanical rheostat).
The AD5175 is available in a 3 mm × 3mm 10-lead LFCSP package and in a 10-lead MSOP package. The part is guaranteed to operate over the extended industrial temperature range of
−40°C to +125°C.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.461.3113 ©2010 Analog Devices, Inc. All rights reserved.
AD5175

TABLE OF CONTENTS

Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Electrical Characteristics ............................................................. 3
Interface Timing Specifications .................................................. 4
Absolute Maximum Ratings ............................................................ 6
Thermal Resistance ...................................................................... 6
ESD Caution .................................................................................. 6
Pin Configuration and Function Descriptions ............................. 7
Typical Performance Characteristics ............................................. 8
Test Circuits ..................................................................................... 11
Theory of Operation ...................................................................... 12
Serial Data Interface ................................................................... 12
Shift Register ............................................................................... 12
Write Operation.......................................................................... 13
Read Operation........................................................................... 15
RDAC Register ............................................................................ 16
50-TP Memory Block ................................................................ 16
Write Protection ......................................................................... 16
50-TP Memory Write-Acknowledge Polling .......................... 18
Reset ............................................................................................. 18
Shutdown Mode ......................................................................... 18
RDAC Architecture .................................................................... 18
Programming the Variable Resistor ......................................... 18
EXT_CAP Capacitor .................................................................. 19
Terminal Voltage Operating Range ......................................... 19
Power-Up Sequence ................................................................... 19
Outline Dimensions ....................................................................... 20
Ordering Guide .......................................................................... 20

REVISION HISTORY

7/10—Rev. 0 to Rev. A
Changes to Ordering Guide .......................................................... 20
3/10—Revision 0: Initial Version
Rev. A | Page 2 of 20
AD5175

SPECIFICATIONS

ELECTRICAL CHARACTERISTICS

VDD = 2.7 V to 5.5 V, VSS = 0 V; VDD = 2.5 V to 2.75 V, VSS = −2.5 V to −2.75 V; −40°C < TA < +125°C, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ1 Max Unit
DC CHARACTERISTICS—RHEOSTAT MODE
Resolution 10 Bits Resistor Integral Nonlinearity
|VDD − VSS| = 3.3 V to 3.6 V −1 +1.5 LSB
|VDD − VSS| = 2.7 V to 3.3 V −2.5 +2.5 LSB Resistor Differential Nonlinearity2 R-DNL Nominal Resistor Tolerance ±15 % Resistance Temperature Coefficient Wiper Resistance Code = zero scale 35 70
RESISTOR TERMINALS
Terminal Voltage Range Capacitance A4 f = 1 MHz, measured to GND, code = half scale 90 pF Capacitance W4 f = 1 MHz, measured to GND, code = half scale 40 pF Common-Mode Leakage Current4 V
DIGITAL INPUTS
Input Logic4
High V
Low V Input Current IIN ±1 µA Input Capacitance4 C
DIGITAL OUTPUT
Output Voltage4
High VOH R
Low VOL R V V Tristate Leakage Current −1 +1 µA Output Capacitance4 5 pF
POWER SUPPLIES
Single-Supply Power Range VSS = 0 V 2.7 5.5 V Dual-Supply Power Range ±2.5 ±2.75 V Supply Current
Positive IDD 1 µA
Negative ISS −1 µA 50-TP Store Current
4, 7
Positive I
Negative I 50-TP Read Current
4, 8
Positive I
Negative I Power Dissipation9 P Power Supply Rejection Ratio4 PSRR ∆VDD/∆VSS = ±5 V ± 10% −50 −55 dB
2, 3
R-INL |VDD − VSS| = 3.6 V to 5.5 V −1 +1 LSB
−1 +1 LSB
V
SS
− 0.1 V
DD
V
DD
4, 5
Code = full scale 35 ppm/°C
4, 6
V
V
TERM
2.0 V
INH
0.8 V
INL
5 pF
IN
= VW 50 nA
A
= 2.2 kΩ to VDD V
PULL_UP
= 2.2 kΩ to VDD
PULL_UP
= 2.7 V to 5.5 V, VSS = 0 V 0.4 V
DD
= 2.5 V to 2.75 V, VSS = −2.5 V to −2.75 V 0.6 V
DD
DD_OTP_STORE
SS_OTP_STORE
4 mA
−4 mA
DD_OTP_READ
SS_OTP_READ
DISS
500 µA
−500 µA
V
= VDD or VIL = GND 5.5 µW
IH
Rev. A | Page 3 of 20
AD5175
Parameter Symbol Test Conditions/Comments Min Typ1 Max Unit
DYNAMIC CHARACTERISTICS
Bandwidth −3 dB, RAW = 5 kΩ, Terminal W, see Figure 23 700 kHz Total Harmonic Distortion VA = 1 V rms, f = 1 kHz, RAW = 5 kΩ −90 dB Resistor Noise Density RWB = 5 kΩ, TA = 25°C, f = 10 kHz 13 nV/√Hz
1
Typical specifications represent average readings at 25°C, VDD = 5 V, and VSS = 0 V.
2
Resistor position nonlinearity error (R-INL) is the deviation from the ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions.
3
The maximum current in each code is defined by IAW = (VDD − 1)/RAW.
4
Guaranteed by design and not subject to production test.
5
See Figure 8 for more details.
6
Resistor Terminal A and Resistor Terminal W have no limitations on polarity with respect to each other. Dual-supply operation enables ground referenced bipolar
signal adjustment.
7
Different from operating current; the supply current for the fuse program lasts approximately 55 ms.
8
Different from operating current; the supply current for the fuse read lasts approximately 500 ns.
9
P
is calculated from (IDD × VDD) + (ISS × VSS).
DISS
10
All dynamic characteristics use VDD = +2.5 V, VSS = −2.5 V.

INTERFACE TIMING SPECIFICATIONS

VDD = 2.7 V to 5.5 V; all specifications T
Table 2.
Limit at T Parameter Conditions1 Min Max Unit Description
2
f
Standard mode 100 kHz Serial clock frequency
SCL
Fast mode 400 kHz Serial clock frequency t1 Standard mode 4 µs t Fast mode 0.6 µs t t2 Standard mode 4.7 µs t Fast mode 1.3 µs t t3 Standard mode 250 ns t Fast mode 100 ns t t4 Standard mode 0 3.45 µs t Fast mode 0 0.9 µs t t5 Standard mode 4.7 µs t Fast mode 0.6 µs t t6 Standard mode 4 µs t Fast mode 0.6 µs t High speed mode 160 ns t t7 Standard mode 4.7 µs t Fast mode 1.3 µs t t8 Standard mode 4 µs t Fast mode 0.6 µs t t9 Standard mode 1000 ns t Fast mode 300 ns t t10 Standard mode 300 ns t Fast mode 300 ns t t11 Standard mode 1000 ns t Fast mode 300 ns t t
Standard mode 1000 ns
11A
Fast mode 300 ns
t12 Standard mode 300 ns t Fast mode 300 ns t t13
3
t
Fast mode 0 50 ns Pulse width of the spike is suppressed
SP
4, 5
t
500 ns Command execute time
EXEC
RESET
4, 10
MIN
to T
, unless otherwise noted.
MAX
, T
MIN
MAX
, SCL high time
HIGH
, SCL high time
HIGH
, SCL low time
LOW
, SCL low time
LOW
, data setup time
SU;DAT
, data setup time
SU;DAT
, data hold time
HD;DAT
, data hold time
HD;DAT
, set-up time for a repeated start condition
SU;STA
set-up time for a repeated start condition
SU;STA,
, hold time (repeated) start condition
HD;STA
, hold time (repeated) start condition
HD;STA
, hold time (repeated) start condition
HD;STA
, bus free time between a stop and a start condition
BUF
, bus free time between a stop and a start condition
BUF
, setup time for a stop condition
SU;STO
, setup time for a stop condition
SU;STO
, rise time of the SDA signal
RDA
, rise time of the SDA signal
RDA
, fall time of the SDA signal
FDA
, fall time of the SDA signal
FDA
, rise time of the SCL signal
RCL
, rise time of the SCL signal
RCL
, rise time of the SCL signal after a repeated start condition
t
RCL1
and after an acknowledge bit
, rise time of the SCL signal after a repeated start condition
t
RCL1
and after an acknowledge bit
, fall time of the SCL signal
FCL
, fall time of the SCL signal
FCL
pulse time
20 ns
Rev. A | Page 4 of 20
Minimum RESET low time
AD5175
Limit at T Parameter Conditions1 Min Max Unit Description
t
RDAC_R-PERF
t
RDAC_NORMAL
t
MEMORY_READ
t
MEMORY_PROGRAM
t
RESET
t
POWER-UP
1
Maximum bus capacitance is limited to 400 pF.
2
The SDA and SCL timing is measured with the input filters enabled. Switching off the input filters improves the transfer rate but has a negative effect on EMC behavior
of the part.
3
Input filtering on the SCL and SDA inputs suppresses noise spikes that are less than 50 ns for fast mode.
4
Refer to t
5
Refer to t
6
Maximum time after VDD − VSS is equal to 2.5 V.
2 µs RDAC register write command execute time (R-Perf mode)
600 ns RDAC register write command execute time (normal mode)
6 µs Memory readback execute time
350 ms Memory program time
600 µs Reset 50-TP restore time
6
2 ms Power-on 50-TP restore time
RDAC_R-PERF
MEMORY_READ
and t
and
for RDAC register write operations.
RDAC_NORMAL
t
MEMORY_PROGRAM
for memory commands operations.

Shift Register and Timing Diagrams

, T
MIN
MAX
DB9 (MSB) DB0 (LSB)
C3
0 0
C2
CONTROL BI T S
D9
C0 C1
D7
D8
D6 D5
DATA BITS
D4
D3
D2 D1
D0
8719-003
Figure 2. Shift Register Content
SCL
SDA
RESET
t
11
t
2
t
6
t
7
PS S P
t
4
t
12
t
1
t
3
Figure 3. 2-Wire I
t
6
t
5
2
C Timing Diagram
t
8
t
10
t
1
3
t
9
8719-002
Rev. A | Page 5 of 20
AD5175

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND –0.3 V to +7.0 V VSS to GND +0.3 V to −7.0 V VDD to VSS 7 V VA, VW to GND VSS − 0.3 V, VDD + 0.3 V Digital Input and Output Voltage to GND −0.3 V to VDD + 0.3 V EXT_CAP to VSS 7 V IA, IW
Pulsed1
Frequency > 10 kHz ±6 mA/d2 Frequency ≤ 10 kHz ±6 mA/√d2
Continuous ±6 mA Operating Temperature Range3 −40°C to +125°C Maximum Junction Temperature
(T
Maximum)
J
150°C
Storage Temperature Range −65°C to +150°C Reflow Soldering
Peak Temperature 260°C
Time at Peak Temperature 20 sec to 40 sec Package Power Dissipation (TJ max − TA)/θJA
1
Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum applied voltage across any two of the A and W terminals at a given resistance.
2
Pulse duty factor.
3
Includes programming of 50-TP memory.
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE

θJA is defined by JEDEC specification JESD-51 and the value is dependent on the test board and test environment.
Table 4. Thermal Resistance
Package Type θJA θ
10-Lead LFCSP 50 3 °C/W 10-Lead MSOP 1351 N/A °C/W
1
JEDEC 2S2P test board, still air (0 m/sec airflow).

ESD CAUTION

Unit
JC
Rev. A | Page 6 of 20
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