Analog Devices AD524SE-883B, AD524SD-883B, AD524SD, AD524SCHIPS, AD524CD Datasheet

...
Precision
AD524
20kV
–INPUT
G = 10
+INPUT
G = 100
G = 1000
RG
2
RG
1
4.44kV
404V
40V
PROTECTION
20kV
20kV
20kV
20kV
20kV
SENSE
REFERENCE
V
b
V
OUT
PROTECTION
a
FEATURES Low Noise: 0.3 V p-p 0.1 Hz to 10 Hz Low Nonlinearity: 0.003% (G = 1) High CMRR: 120 dB (G = 1000) Low Offset Voltage: 50 ␮V Low Offset Voltage Drift: 0.5 ␮V/ⴗC Gain Bandwidth Product: 25 MHz Pin Programmable Gains of 1, 10, 100, 1000 Input Protection, Power On–Power Off No External Components Required Internally Compensated MIL-STD-883B and Chips Available 16-Lead Ceramic DIP and SOIC Packages and 20-Terminal Leadless Chip Carriers Available Available in Tape and Reel in Accordance with EIA-481A Standard Standard Military Drawing Also Available

PRODUCT DESCRIPTION

The AD524 is a precision monolithic instrumentation amplifier designed for data acquisition applications requiring high accu­racy under worst-case operating conditions. An outstanding combination of high linearity, high common mode rejection, low offset voltage drift and low noise makes the AD524 suitable for use in many data acquisition systems.
The AD524 has an output offset voltage drift of less than 25 µV/°C, input offset voltage drift of less than 0.5 µV/°C, CMR above
90 dB at unity gain (120 dB at G = 1000) and maximum non­linearity of 0.003% at G = 1. In addition to the outstanding dc specifications, the AD524 also has a 25 kHz gain bandwidth product (G = 1000). To make it suitable for high speed data acquisition systems the AD524 has an output slew rate of 5 V/µs and settles in 15 µs to 0.01% for gains of 1 to 100.
As a complete amplifier the AD524 does not require any exter­nal components for fixed gains of 1, 10, 100 and 1000. For other gain settings between 1 and 1000 only a single resistor is required. The AD524 input is fully protected for both power-on and power-off fault conditions.
The AD524 IC instrumentation amplifier is available in four different versions of accuracy and operating temperature range. The economical “A” grade, the low drift “B” grade and lower
drift, higher linearity “C” grade are specified from –25°C to +85°C. The “S” grade guarantees performance to specification over the extended temperature range –55°C to +125°C. Devices
are available in 16-lead ceramic DIP and SOIC packages and a 20-terminal leadless chip carrier.
Instrumentation Amplifier

FUNCTIONAL BLOCK DIAGRAM

PRODUCT HIGHLIGHTS

1. The AD524 has guaranteed low offset voltage, offset voltage drift and low noise for precision high gain applications.
2. The AD524 is functionally complete with pin programmable gains of 1, 10, 100 and 1000, and single resistor program­mable for any gain.
3. Input and output offset nulling terminals are provided for very high precision applications and to minimize offset volt­age changes in gain ranging applications.
4. The AD524 is input protected for both power-on and power­off fault conditions.
5. The AD524 offers superior dynamic performance with a gain bandwidth product of 25 MHz, full power response of 75 kHz and a settling time of 15 µs to 0.01% of a 20 V step (G = 100).
REV. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 1999
AD524–SPECIFICATIONS
(@ VS = 15 V, RL = 2 k and TA = +25C unless otherwise noted)
Model Min Typ Max Min Typ Max Min Typ Max Min Typ Max Units
GAIN
Gain Equation
(External Resistor Gain
Programming)
Gain Range (Pin Programmable) 1 to 1000 1 to 1000 1 to 1000 1 to 1000 Gain Error
Nonlinearity
Gain vs. Temperature
VOLTAGE OFFSET (May be Nulled)
Input Offset Voltage 250 100 50 100 µV
Output Offset Voltage 5 3 2.0 3.0 mV
Offset Referred to the
INPUT CURRENT
Input Bias Current 50 25 15 50 nA
Input Offset Current 35 15 10 35 nA
INPUT
Input Impedance
Input Voltage Range
Common-Mode Rejection dc to 60 Hz with 1 k Source Imbalance
OUTPUT RATING
V
DYNAMIC RESPONSE
Small Signal – 3 dB
Slew Rate 5.0 5.0 5.0 5.0 V/µs Settling Time to 0.01%, 20 V Step
NOISE
Voltage Noise, 1 kHz
R.T.I., 0.1 Hz to 10 Hz
Current Noise
1
G = 1 0.05 0.03 0.02 0.05 % G = 10 0.25 0.15 0.1 0.25 % G = 100 0.5 0.35 0.25 0.5 % G = 1000
G = 1 ±0.01 ±0.005 ±0.003 ±0.01 % G = 10,100 ±0.01 ±0.005 ±0.003 ±0.01 % G = 1000 ±0.01 ±0.01 ±0.01 ±0.01 %
G = 1 5555ppm/°C G = 10 15 10 10 10 ppm/°C G = 100 35 25 25 25 ppm/°C G = 1000 100 50 50 50 ppm/°C
vs. Temperature 2 0.75 0.5 2.0 µV/°C vs. Temperature 100 50 25 50 µV/°C
Input vs. Supply
G = 1 70 75 80 75 dB G = 10 85 95 100 95 dB G = 100 95 105 110 105 dB G = 1000 100 110 115 110 dB
vs. Temperature ±100 ±100 ±100 ±100 pA/°C vs. Temperature ±100 ±100 ±100 ± 100 pA/°C
Differential Resistance 10 Differential Capacitance 10 10 10 10 pF Common-Mode Resistance 10 Common-Mode Capacitance 10 10 10 10 pF
2
Max Differ. Input Linear (V
Max Common-Mode Linear (V
G = 1 70 75 80 70 dB G = 10 90 95 100 90 dB G = 100 100 105 110 100 dB G = 1000 110 115 120 110 dB
, R
= 2 kΩ±10 ±10 ±10 ±10 V
OUT
L
G = 1 1111MHz G = 10 400 400 400 400 kHz G = 100 150 150 150 150 kHz G = 1000 25 25 25 25 kHz
G = 1 to 100 15 15 15 15 µs G = 1000 75 75 75 75 µs
R.T.I. 7777nV/Hz R.T.O. 90 90 90 90 nVHz
G = 1 15151515µV p-p G = 10 2222µV p-p G = 100, 1000 0.3 0.3 0.3 0.3 µV p-p
0.1 Hz to 10 Hz 60 60 60 60 pA p-p
)
DL
)
CM
AD524A AD524B AD524C AD524S
40, 000
 
R
+ 1
± 20%
 
G
±
9
9
±10 ±10 ±10 ±10 V
12 V –
G
× V
D
2
40, 000
R
2.0 1.0 0.5 2.0 %
 
12 V –
+ 1
± 20%
 
G
9
10
9
10
 
G
× V
D
2
40, 000
 
12 V –
+ 1
± 20%
R
 
G
9
10
9
10
 
G
× V
D
2
40, 000
 
R
G
12 V –
10
10
+ 1
± 20%
 
9
9
 
G
× V
D
2
Ω Ω
V
–2–
REV. E
AD524
Model Min Typ Max Min Typ Max Min Typ Max Min Typ Max Units
AD524A AD524B AD524C AD524S
SENSE INPUT
R
IN
I
IN
Voltage Range ±10 ±10 ±10 ±10 V Gain to Output l l 1 l %
REFERENCE INPUT
R
IN
I
IN
Voltage Range ±10 ±10 10 10 V Gain to Output l 1 l 1 %
20 20 20 20 kΩ ±20% 15 15 15 15 µA
40 40 40 40 kΩ ±20% 15 15 15 15 µA
TEMPERATURE RANGE
Specified Performance –25 +85 –25 +85 –25 +85 –55 +125 °C Storage –65 +150 –65 +150 –65 +150 –65 +150 °C
POWER SUPPLY
Power Supply Range 6 ±15 18 6 ±15 18 6 ±15 18 6 ±15 18 V Quiescent Current 3.5 5.0 3.5 5.0 3.5 5.0 3.5 5.0 mA
NOTES
1
Does not include effects of external resistor RG.
2
VOL is the maximum differential input voltage at G = 1 for specified nonlinearity.
at the maximum = 10 V/G.
V
DL
= Actual differential input voltage.
V
D
Example: G = 10, V
= 12 V – (10/2 × 0.50 V) = 9.5 V.
V
CM
Specification subject to change without notice. All min and max specifications are guaranteed. Specifications shown in boldface are tested on all production units at final electrical test. Results from those tests are used to calculate outgoing quality levels.
= 0.50.
D
REV. E –3–
AD524
TOP VIEW
4 5 6 7 8
14
15
16
17
18
1232019
9 10111213
RG
2
INPUT NULL
NC
INPUT NULL
REFERENCE
+INPUT
–INPUTNCRG
1
OUTPUT
–V
S+VS
NC
SENSE
OUTPUT NULL
G = 100
G = 10
SHORT TO RG
2
FOR
DESIRED GAIN
OUTPUT
NULL
NC
G = 1000
AD524
NC = NO CONNECT
719
518
–V
S
+V
S
OUTPUT OFFSET NULL
INPUT
OFFSET NULL
WARNING!
ESD SENSITIVE DEVICE

ABSOLUTE MAXIMUM RATINGS

l
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±18 V
Internal Power Dissipation . . . . . . . . . . . . . . . . . . . . . 450 mW
Input Voltage
2
(Either Input Simultaneously) |VIN| + |VS| . . . . . . . . <36 V
Output Short Circuit Duration . . . . . . . . . . . . . . . . . Indefinite
Storage Temperature Range
(R) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +125°C
(D, E) . . . . . . . . . . . . . . . . . . . . . . . . . . . –65°C to +150°C
Operating Temperature Range
AD524A/B/C . . . . . . . . . . . . . . . . . . . . . . . . –25°C to +85°C
AD524S . . . . . . . . . . . . . . . . . . . . . . . . . . –55°C to +125°C
Lead Temperature (Soldering 60 secs) . . . . . . . . . . . . +300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
2
Max input voltage specification refers to maximum voltage to which either input terminal may be raised with or without device power applied. For example, with ±18
volt supplies max V
is ±18 volts, with zero supply voltage max VIN is ±36 volts.
IN
METALIZATION PHOTOGRAPH
Contact factory for latest dimensions.
Dimensions shown in inches and (mm).
OUTPUT
NULL
RG
–INPUT +INPUT
RG
OUTPUT
NULL
14 13
15
16
1
1 2
3
2
PAD NUMBERS CORRESPOND TO PIN NUMBERS FOR THE
G = 100 G = 1000 SENSE
G = 10
4
INPUT
INPUT
NULL
NULL
D-16 AND R-16 16-PIN CERAMIC PACKAGES.
11 10
12
5
0.170 (4.33)
REFERENCE
OUTPUT
9 8
+V
S
0.103 (2.61)
–V
7
S
6
CONNECTION DIAGRAMS
Ceramic (D) and
SOIC (R) Packages
415
514
16
RG
15
OUTPUT NULL
14
OUTPUT NULL
13
G = 10
12
G = 100
11
G = 1000
10
SENSE
9
OUTPUT
–V
OUTPUT OFFSET NULL
– INPUT
+ INPUT
RG INPUT NULL INPUT NULL
REFERENCE
–V +V
+V
INPUT
OFFSET NULL
2
S S
S
1
2
3
AD524
4
TOP VIEW
5
(Not to Scale)
6
7
8
Leadless Chip Carrier
1
SHORT TO RG
FOR
2
DESIRED GAIN
S

ORDERING GUIDE

Model Temperature Ranges Package Descriptions Package Options
AD524AD –40°C to +85°C 16-Lead Ceramic DIP D-16 AD524AE –40°C to +85°C 20-Terminal Leadless Chip Carrier E-20A AD524AR-16 –40°C to +85°C 16-Lead Gull-Wing SOIC R-16 AD524AR-16-REEL –40°C to +85°C Tape & Reel Packaging 13" AD524AR-16-REEL7 –40°C to +85°C Tape & Reel Packaging 7" AD524BD –40°C to +85°C 16-Lead Ceramic DIP D-16 AD524BE –40°C to +85°C 20-Terminal Leadless Chip Carrier E-20A AD524CD –40°C to +85°C 16-Lead Ceramic DIP D-16 AD524SD –55°C to +125°C 16-Lead Ceramic DIP D-16 AD524SD/883B –55°C to +125°C 16-Lead Ceramic DIP D-16 5962-8853901EA* –55°C to +125°C 16-Lead Ceramic DIP D-16 AD524SE/883B –55°C to +125°C 20-Terminal Leadless Chip Carrier E-20A AD524SCHIPS –55°C to +125°C Die
*
Refer to official DESC drawing for tested specifications.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD524 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
REV. E–4–
LOAD RESISTANCE – V
OUTPUT VOLTAGE SWING – V
p-p
30
20
0
10 100 10k
1k
10
AD524–Typical Characteristics
20
15
10
+258C
INPUT VOLTAGE – 6V
5
0
05 20
SUPPLY VOLTAGE – 6V
10 15
Figure 1. Input Voltage Range vs. Supply Voltage, G = 1
8.0
6.0
4.0
2.0
QUIESCENT CURRENT – mA
0
05 2010 15
SUPPLY VOLTAGE – 6V
Figure 4. Quiescent Current vs. Supply Voltage
20
15
10
5
OUTPUT VOLTAGE SWING – 6V
0
05 2010 15
SUPPLY VOLTAGE – 6V
Figure 2. Output Voltage Swing vs. Supply Voltage
16
14
12
10
8
6
4
2
INPUT BIAS CURRENT – 6nA
0
05 20
SUPPLY VOLTAGE – 6V
10 15
Figure 5. Input Bias Current vs. Supply Voltage
Figure 3. Output Voltage Swing vs. Load Resistance
40
30
20
10
0
–10
–20
INPUT BIAS CURRENT – nA
–30
–40
–75 125
–25 25 75
TEMPERATURE – 8C
Figure 6. Input Bias Current vs. Temperature
16
14
12
10
8
6
4
INPUT BIAS CURRENT – 6nA
2
0
05 2010 15
INPUT VOLTAGE – 6V
Figure 7. Input Bias Current vs. Input Voltage
0
1
2
3
4
5
FROM FINAL VALUE – mV
OS
6
DV
0 1.0 8.02.0 3.0 4.0 5.0 6.0 7.0
WARM-UP TIME – Minutes
Figure 8. Offset Voltage, RTI, Turn On Drift
1000
100
10
GAIN – V/V
1
0 10 10M100 1k 10k 100k 1M
FREQUENCY – Hz
Figure 9. Gain vs. Frequency
REV. E
–5–
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