The ADA10000 is a monolithic IC intended for use in
applications requiring high linearity, such as Cellular
T elephone Base Station Driver Amplifiers, CA TV Fiber
Receiver and Distribution Amplifiers, and CATV Drop
RF Input
S3 Package
Modified 16 Pin SOIC
Amplifiers. Offered in both a modified 16 lead SOIC
package and SOT-89 package, it is well suited for
use in amplifiers where small size, reduced
component count, and high reliability are important.
S24 Package
SOT-89
RF Output
/ Bias
Figure 1: Block Diagram
06/2003
ADA10000
1
2
3
4
5
6
7
8
GND
GND
GND
GND
GND
RF
GND
GND
IN
GND
GND
RF
GND
GND
GND
GND
GND
OUT
Figure 2: Pinout - S3 Package
T able 1: Pin Description - S3 Package
NIPEMANNOITPIRCSEDNIPEMANNOITPIRCSED
1DNGdnuorG61DNGdnuorG
16
15
14
13
12
11
10
9
2DNGdnuorG51DNGdnuorG
3DNGdnuorG41FR
TUO
saiB/tuptuOFR
4DNGdnuorG31DNGdnuorG
5DNGdnuorG21DNGdnuorG
6FR
NI
tupnIFR11DNGdnuorG
7DNGdnuorG01DNGdnuorG
8DNGdnuorG9DNGdnuorG
2
Data Sheet - Rev 2.3
06/2003
GND
4
231
ADA10000
RF
IN
GND
RF
OUT
Figure 3: Pinout - S24 Package
T able 2: Pin Description - S24 Package
NIPEMANNOITPIRCSED
1FR
NI
2DNGdnuorG
3FR
TUO
4DNGdnuorG
tupnIFR
saiB/tuptuOFR
Data Sheet - Rev 2.3
06/2003
3
ADA10000
ELECTRICAL CHARACTERISTICS
T able 3: Absolute Minimum and Maximum Ratings
RETEMARAPNIMXAMTINU
ylppuS
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Notes:
(1 ) RF input pin must be AC-coupled. No DC external bias should be
applied.
RETEMARAPNIMPYTXAMTINU
)41nip:egakcap3S(
021+CDV
)3nip:egakcap42S(
tupnItarewoPFR
)6nip:egakcap3S(
-01+mBd
)1nip:egakcap42S(
erutarepmeTegarotS56-051+C°
Table 4: Operating Ranges
ycneuqerFtuptuO/tupnIFR05- 0001zHM
V(egatloVylppuS
DD
)4+8+9+CDV
)1(
erutarepmeTesaC04--58+
The device may be operated safely over these conditions; however, parametric
performance is guaranteed only over the conditions defined in the electrical
specifications.
Notes:
(1 ) Median time to failure will degrade above this temperature.
C°
4
Data Sheet - Rev 2.3
06/2003
Table 5: Electrical Specifications
(TA = +25 °C, VDD = +8 VDC, 75
ΩΩ
Ω system, see Figures 4 and 5)
ΩΩ
RETEMARAPNIMPYTXAMTINUTNEMMOC
ADA10000
)1(
OSC
)1(
BTC
)2(
OSC/
)2(
BTC/
26/06--cBd
47/56--cBd
niaG4151- Bd
erugiFesioN-0.25.3Bd
)3(
)2PII(
)3(
)3PII(
tnioPtpecretnItupnIredrOdn2
tnioPtpecretnItupnIredrOdr3
ecnatsiseRlamrehT
)4(
noitpmusnoCtnerruC
Notes:
(1 ) 160 channels, +17 dBmV per channel (measured at output), 6 MHz channel spacing.
(2 ) 80 channels, +19 dBmV per channel (measured at output), 6 MHz channel spacing.
(3 ) Two tones, -10 dBm per tone at input.
(4 ) The device can be operated at VDD = +6 VDC for lower power dissipation. Refer to Figures 7, 8, 13, and 16 for
performance variation with supply voltage.
92+43+- mBd
31+51+- mBd
-
-
-
-
53
02
05- 051Am
W/C°
egakcap3S
egakcap42S
Data Sheet - Rev 2.3
06/2003
5
ADA10000
VDD
3.9 uH
0.1 uF
1000 pF
RFOUT
1000 pF
5.6 nH
ADA10000
RFIN
Figure 4: Test Circuit - S3 Packaged Device (75
ΩΩ
Ω terminations)
ΩΩ
VDD
820 nH
1000 pF180 pF
RFINRFOUT
10 nH
13
ADA10000
0.01 uF
0.5 pF
2,4
0.5 pF
100 W50 W
Figure 5: T est Circuit - S24 Packaged Device (75
6
Data Sheet - Rev 2.3
06/2003
ΩΩ
Ω terminations)
ΩΩ
ADA10000
PERFORMANCE DA TA
As measured in test circuits shown in Figures 4 and 5.
Figure 6: Gain and Noise Figure vs.
Frequency - S3 Packaged Device
ADD
(T = +25 C, V = +8 V, 75system)
18
17
16
15
Gain (dB)
14
13
12
02004006008001000
o
Frequency (MHz)
W
Gain
NF
Figure 8: IIP2 and IIP3 vs. Supply
Voltage - S3 Packaged Device
(T = +25 C, 75system)
40
35
30
25
20
IIP2, IIP3 (dBm)
15
10
5
456789
Notes:
1. IIP2 measured at 986.5 MHz; Input = two
tones at 55.25 MHz and 931.25 MHz at -10 dBm.
2. IIP3 measured with two tones at the input: 986.5
MHz and 992.5 MHz at -10 dBm.
A
o
W
Supply Voltage (V)
IIP2
IIP3
Figure 10: Unmatched Device Input Impedance
S3 Packaged Device
ADD
(T = +25 C, V = +8 V, 75system)
o
W
Figure 7: Gain and Noise Figure vs.
Supply Voltage - S3 Packaged Device
(T = +25 C, f = 500 MHz, 75system)
4.0
3.5
3.0
2.5
Gain (dB)
2.0
Noise Figure (dB)
1.5
1.0
A
16.0
15.8
15.6
15.4
15.2
15.0
456789
o
Supply Voltage (V)
W
Gain
NF
Figure 9: Output Power vs. Input Power
S3 Packaged Device
(T = +25 C, V = +8 V, f = 500 MHz, 75system)
ADD
Output Power (dBm)
o
26
24
22
20
18
16
14
024681012
Input Power (dBm)
Figure 11: Unmatched Device Output Impedance
S3 Packaged Device
(T = +25 C, V = +8 V, 75system)
ADD
o
W
2.2
2.1
2.0
1.9
Noise Figure (dB)
1.8
1.7
W
50 MHz
1 GHz
Refer to the ANADIGICS web site for full 2-port s-parameter data.
Data Sheet - Rev 2.3
06/2003
50 MHz
1 GHz
7
ADA10000
Figure 12: Gain and Noise Figure vs.
Frequency - S24 Packaged Device
(T = +25 C, V = +8 V, 75system)
ADD
18
17
16
15
Gain (dB)
14
13
12
02004006008001000
o
Frequency (MHz)
W
Gain
NF
Figure 14: Input Return Loss vs.
Frequency - S24 Packaged Device
(T = +25 C, V = +8 V, 75system)
ADD
0
-5
-10
-15
-20
-25
Input Return Loss (dB)
-30
-35
-40
02004006008001000
o
W
Frequency (MHz)
Figure 13: Gain and Noise Figure vs.
Supply Voltage - S24 Packaged Device
(T = +25 C, f = 500 MHz, 75system)
4.0
3.5
3.0
2.5
Gain (dB)
2.0
Noise Figure (dB)
1.5
1.0
A
16.0
15.8
15.6
15.4
15.2
15.0
456789
o
Supply Voltage (V)
W
Gain
NF
2.2
2.1
2.0
1.9
Noise Figure (dB)
1.8
1.7
Figure 15: Output Return Loss vs.
Frequency - S24 Packaged Device
(T = +25 C, V = +8 V, 75system)
ADD
0
-5
-10
-15
-20
-25
Output Return Loss (dB)
-30
-35
-40
02004006008001000
o
W
Frequency (MHz)
Figure 16: IIP2 and IIP3 vs.Supply
Voltage - S24 Packaged Device
(T = +25 C, 75system)
40
35
30
25
20
IIP2, IIP3 (dBm)
15
10
5
456789
A
Notes:
1. IIP2 measured at 986.5 MHz; Input = two
tones at 55.25 MHz and 931.25 MHz at -10 dBm.
2. IIP3 measured with two tones at the input: 986.5
MHz and 992.5 MHz at -10 dBm.
8
o
W
Supply Voltage (V)
IIP2
IIP3
Data Sheet - Rev 2.3
Figure 17: Output Power vs. Input Power
S24 Packaged Device
(T = +25 C,V = +8 V, f = 500 MHz, 75system)
ADD
Output Power (dBm)
06/2003
o
26
24
22
20
18
16
14
024681012
Input Power (dBm)
W
ADA10000
Figure 18: Unmatched Device Input Impedance
S24 Packaged Device
(T = +25 C, V = +8 V, 75system)
ADD
o
50 MHz
1GHz
W
Refer to the ANADIGICS web site for full 2-port s-parameter data.
Figure 19: Unmatched Device Output Impedance
S24 Packaged Device
(T = +25 C, V = +8 V, 75system)
ADD
o
1 GHz
W
50 MHz
Data Sheet - Rev 2.3
06/2003
9
ADA10000
P ACKAGE OUTLINE
A
S
Y
M
B
O
L
0.058
A
A
1
A
2
B
B
1
C
D
E
e
H
L
LE
0.010
0.004
0.0550.0651.651.40
0.0200.500.330.013
0.0621.581.780.070
0.380
0.400
0.150
0.1604.06
0.050 BSC1.27 BSC
0.0160.0400.411.02
0.0300.76
a
D
LE
HE
0.015 [0.38]X45
C
L
a
A
2
0.003 [0.076mm]
MAX.MIN.MAX.MIN.
1.730.068
0.25
0.250.200.0100.008
10.16
6.205.740.2440.226
8080
NOTE
B
1
NOTES:
1. CONTROLLING DIMENSION: INCHES
2. DIMENSION "D" DOES NOT INCLUDE MOLD FLASH,
3. DIMENSION "E" DOES NOT INCLUDE INTER-LEAD FLASH OR
4
2
3
4. LEAD THICKNESS AFTER PLATING TO BE 0.013 [0.33mm]
B
PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS
AND GATE BURRS SHALL NOT EXCEED 0.006 [0.15mm]
PER SIDE.
PROTRUSIONS. INTER-LEAD FLASH AND PROTRUSIONS
SHALL NOT EXCEED 0.010 [0.25mm] PER SIDE.
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
12
IMPORTANT NOTICE
WARNING
Data Sheet - Rev 2.3
06/2003
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