AMD Advanced Micro Devices AM29LV800BT90WCIB, AM29LV800BT90WCI, AM29LV800BT90WCEB, AM29LV800BT90WCE, AM29LV800BT90WCCB Datasheet

PRELIMINARY

This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you ev aluate this product. AMD reserves the right to change or dis continue work on thi s proposed
product without notice.

Publication# 21490 Rev: E Amendment/+1
Issue Date: March 1998

Refer to AMD’s Website (www.amd.com) for the latest information.

Am29LV800B

8 Megabit (1 M x 8-Bit/512 K x 16-Bit)
CMOS 3.0 Volt-onl y Boot Sector Flash Memory

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3. 6 volt read and write

operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read

and write operations and for compatibility with
high performance 3.3 volt microprocessors

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29LV800 device

■ High performance

— Full voltage range: access times as fast as 80 ns
— Regulated voltage range: access times as fast

as 70 ns

■ Ultra low power consumption (typical values at

5 MHz)

— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current

■ Flexible sector architecture

— O ne 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

fifteen 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

fifteen 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:

A hardware method of locking a sector to

prevent any program or erase operations within

that sector

Sectors can be locked in-system or via

programming equipment

T emporary Sector Unprotect feat ure allows code

changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when

issuing multiple program command sequences

■ Top or bottom boot block configurations

available

■ Embedded Al gorithms

— Embedded Erase algorithm automatically

preprograms and erases the entire chip or any
combination of designated sectors

— Embedded Program algorithm automatically

writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per

sector

■ Package option

— 48-ball FBGA
— 48-pin TSOP
— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with single-

power supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— P rovides a software method of detecting

program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting

program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase oper ation to read data from,

or program data to, a sector that is not being
erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading

array data

2 Am29LV800B

PRELIMINARY

GENERAL DESCRIPTION

The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash
memory organized as 1,048,576 bytes or 524,288
words. The device i s offered in 48-ba ll FBGA, 44-pin
SO, and 48-pin TSOP packages. The word-wide data

(x16) appears on DQ15–DQ0; the byte-wide (x8) data
appears on DQ7–DQ0. This device requires only a
single, 3.0 volt V

CC

supply to perform read, program,
and erase operations. A stand ard EPROM pro­grammer can also be used to program and erase the
device.

This device is manufactured using AMD’s 0.35 µm
process technology, and offers all the features and
benefits of the Am29LV800, which was manufactured
using 0.5 µm process technology. In addition, the
Am29LV800B features unlock bypass programming
and in-system sector protection/unprotection.

The standard device offers access times of 70, 80, 90
and 120 ns, allowing high speed microprocessors to
operate without wait s tates. To el iminate bus conten­tion the device has separate chip enable (CE#), write
enable (WE#) and output enable (OE#) controls.

The device requires only a single 3. 0 v o lt po wer sup-
ply for both read and write functions. Internally gener­ated and regulated voltages are provided for the
program and erase operations.

The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com­mands are written to the command regis ter using
standard micropr ocessor wri te timings. Register co n­tents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.

Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto­matically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facili­tates faster programming times by requir ing only two
write cycles to program data instead of four.

Device erasure occurs by ex ecuting the erase command
sequence. This initiates the Embedded Erase algo­rithm—an i nternal algorithm that autom atically prepro -

grams the array (if it is not already programmed) before
executing the erase operation. During erase, the device
automatically times the erase pulse widths and verifies
proper cell margin.

The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.

The sector erase ar chitecture allo ws memo ry secto rs
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.

Hardware data protection meas ures include a low
V

CC

detector that automatically in hibits write opera­tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem­ory. This can be achieved in-system or via program­ming equipment.

The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.

The hardware RESET# pi n terminates any operation
in progress and resets the internal state machine to
reading array dat a. The RESET# pin ma y be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.

The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep m ode.
The system can also place the de vice into the standby
mode. Power consumption is greatly reduced in both
these modes.

AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effective­ness. The device electrically erases all bi ts with in
a sector simultaneously via Fowler-Nordheim tun­neling. The data is programmed using hot electron
injection.

Am29LV800B 3

PRELIMINARY

PRODUCT SELECTOR GUIDE

Note: See “AC Characteristics” for full specifications.

BLOCK DIAGRAM

Family Part Number Am29LV800B

Speed Options

Regulated Voltage Range: VCC =3.0–3.6 V 70R

Full Voltage Range: VCC = 2.7–3.6 V 80 90 120

Max access time, ns (t

ACC

) 70 80 90 120
Max CE# access time, ns (tCE) 70 80 90 120
Max OE# access time, ns (tOE) 30 30 35 50

Input/Output

Buffers

X-Decoder

Y-Decoder

Chip Enable

Output Enable

Logic

Erase Voltage

Generator

PGM Voltage

Generator

Timer

VCC Detector

State

Control

Command

Register

V

CC

V

SS

WE#

BYTE#

CE#

OE#

STB

STB

DQ0

–

DQ15 (A-1)

Sector Switches

RY/BY#

RESET#

Data

Latch

Y-Gating

Cell Matrix

Address Latch

A0–A18

21490E-1

4 Am29LV800B

PRELIMINARY

CONNECTION DIAGRAMS

A1

A15

A18

A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#

A17
A7
A6
A5
A4
A3
A2

1

16

2

3
4
5
6
7
8

17
18

19
20
21
22
23
24

9
10
11
12
13
14
15

A16

DQ2

BYTE#

V

SS

DQ15/A-1

DQ7

DQ14

DQ6

DQ13

DQ9
DQ1
DQ8
DQ0

OE#

V

SS

CE#

A0

DQ5

DQ12

DQ4

V

CC

DQ11

DQ3

DQ10

48

33

47
46
45
44
43
42
41
40
39
38
37
36
35
34

25

32
31
30
29
28
27
26

A1

A15

A18

A14
A13
A12
A11
A10

A9

A8
NC
NC

WE#

RESET#

NC
NC

RY/BY#

A17

A7

A6

A5

A4

A3

A2

1

16

2
3
4
5
6
7
8

17
18
19
20
21
22
23
24

9
10
11
12
13
14
15

A16

DQ2

BYTE#
V

SS

DQ15/A-1
DQ7
DQ14
DQ6
DQ13

DQ9
DQ1
DQ8
DQ0
OE#

V

SS

CE#
A0

DQ5
DQ12
DQ4
V

CC

DQ11
DQ3
DQ10

48

33

47
46
45
44
43
42
41
40
39
38
37
36
35
34

25

32
31
30
29
28
27
26

21490E-2

Reverse TSOP

Standard TSOP

Am29LV800B 5

PRELIMINARY

CONNECTION DIAGRAMS

1
2
3
4
5
6
7
8

9
10
11
12
13
14
15
16
17
18
19
20
21
22

RY/BY#

A18
A17

A7
A6
A5
A4
A3
A2
A1
A0

CE#

V

SS

OE#
DQ0
DQ8
DQ1
DQ9
DQ2

DQ10

DQ3

DQ11

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V

SS

DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V

CC

A1 B1 C1 D1 E1 F1 G1 H1

A2 B2 C2 D2 E2 F2 G2 H2

A3 B3 C3 D3 E3 F3 G3 H3

A4 B4 C4 D4 E4 F4 G4 H4

A5 B5 C5 D5 E5 F5 G5 H5

A6 B6 C6 D6 E6 F6 G6 H6

DQ15/A-1 V

SS

BYTE#A16A15A14A12A13

DQ13 DQ6DQ14DQ7A11A10A8A9

V

CC

DQ4DQ12DQ5NCNCRESET#WE#

DQ11 DQ3DQ10DQ2NCA18NCRY/BY#

DQ9 DQ1DQ8DQ0A5A6A17A7

OE# V

SS

CE#A0A1A2A4A3

SO

21490E-3

FBGA

Bump Side (Bottom) View

6 Am29LV800B

PRELIMINARY

Special Handling Instructions for FBGA
Package

Special handling is required for Flash Memory products
in FBGA packages.

Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be
compromised if the package bod y is ex posed to
temperatures above 150°C for prolonged periods of
time.

PIN CONFIGURATION

A0–A18 = 19 addresses
DQ0–DQ14 = 15 data inputs/outputs
DQ15/A-1 = DQ15 (data inp ut/ output, word mode),

A-1 (LSB address input, byte mode)
BYTE# = Selects 8-bit or 16-bit mode
CE# = Chip enable
OE# = Output enable
WE# = Write enable
RESET# = Hardwa r e reset pin, active low
RY/BY# = Ready/Busy# output
V

CC

= 3.0 volt-only single power supply

(see Product Selector Guide for speed

options and voltage supply toleranc es)
V

SS

= Device ground

NC = Pin not connected internally

LOGIC SYMBOL

21490E-4

19

16 or 8

DQ0–DQ15

(A-1)

A0–A18

CE#
OE#

WE#
RESET#
BYTE# RY/BY#

Am29LV800B 7

PRELIMINARY

ORDERING INFORMATION
Standard Pr od ucts

AMD standard products are available in s everal packages and operating ranges. The order number (Valid Combi­nation) is formed by a combination of the elements below.

Valid Combinations

Valid Combinations list configurations planned to be sup­ported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.

DEVICE NUMBER/DESCRIPTION

Am29LV800B
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS Flash Memory

3.0 Volt-only Read, Program, and Erase

CE70RAm29LV800B T

OPTIONAL PROCESSING

Blank = Standard Processing
B = Burn-in
(Contact an AMD representative for more information)

TEMPERATURE RANGE

C=Commercial (0°C to +70°C)
I = Industrial (–40°C to +85°C)
E = Extended (–55°C to +125°C)

PACKAGE TYPE

E = 48-Pin Thin Small Outline Package (TSOP)

Standard Pinout (TS 048)

F = 48-Pin Thin Small Outline Package (TSOP)

Reverse Pinout (TSR048)
S = 44-Pin Small Outline Package (SO 044)
WB = 48-ball Fine Pitch Ball Grid Array (FBGA)

0.80 mm pitch, 6 x 9 mm package

SPEED OPTION

See Product Selector Guide and Valid Combinations

BOOT CODE SECTOR ARCHITECTURE

T = Top Sector
B = Bottom Sector

Valid Combinations

Am29LV800BT70R,
Am29LV800BB70R

EC, EI, FC, FI, SC, SI, WBC

Am29LV800BT80,
Am29LV800BB80

EC, EI, EE,

FC, FI, FE,

SC, SI, SE,

WBC, WBI, WBE

Am29LV800BT90,
Am29LV800BB90

Am29LV800BT120,
Am29LV800BB120

8 Am29LV800B

PRELIMINARY

DEVICE BUS OPERATIONS

This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory loc ation.
The register is composed of latches that store the com­mands, along with the address and data information
needed to execute the command. The contents of the

register serve as inputs to the internal state machine.
The state machine outputs d ictate the function of the
device. Table 1 lists the device bus operations, the
inputs and control lev els t he y requ ire , and t he resulting
output. The following subsections describe each of
these operations in further detail.

Table 1. Am29LV800B Device Bus Operations

Legend:

L = Logic Low = V

IL

, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, D

OUT

= Data Out

Notes:

1. Addresses are A18:A0 in word mode (BYTE# = V

IH

), A18:A-1 in byte mode (BYTE# = VIL).

2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector
Protection/Unprotection” section.

Word/Byte Configuration

The BYTE# pin controls whether the device data I/O

pins DQ15–DQ0 operate in the by te or word configur a­tion. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are activ e and c ontrol­led by CE# and OE#.

If the BYTE# pin is set at logic ‘0’, the device is in byte
configuration, and only data I/O pins DQ0–DQ7 are ac­tive and controlled by CE# and OE#. The data I /O pins
DQ8–DQ14 are tri-stated, and the DQ15 pin is used as
an input for the LSB (A-1) address function.

Requirements for Reading Array Data

To read array data from the outputs, the system must
drive the CE# and OE# pins to V

IL

. CE# is the power
control and selects the device. OE# is the output con­trol and gates array data to the output pins. WE#

should remain at VIH. The BYTE# pin determines
whether the device outputs array data in words or
bytes.

The internal state machine is set for reading array
data upon device po wer-u p , or after a hardw are res et.
This ensure s that no sp urious alteration of the mem­ory content occurs dur ing the power transition. No
command is nece ssary in this mode to ob tain array
data. Standard microprocessor read cycles that as­sert valid addresses on the de vice addr ess inputs pro­duce valid data on the device data outputs. The
device remains enab led f or read access until t he com­mand register contents are altered.

See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica­tions and to Figure 13 for the timing diagram. I

CC1

in

the DC Characteristics table represents the active cur­rent specification for reading array data.

Operation CE# OE# WE# RESET#

Addresses

(Note 1)

DQ0–

DQ7

DQ8–DQ15

BYTE#

= V

IH

BYTE#

= V

IL

Read L L H H A

IN

D

OUT

D

OUT

DQ8–DQ14 = High-Z,

DQ15 = A-1

Write L H L H A

IN

D

IN

D

IN

Standby

V

CC

±

0.3 V

XX

VCC ±

0.3 V

X High-Z High-Z High-Z

Output Disable L H H H X High-Z High-Z High-Z
Reset X X X L X High-Z High-Z High-Z

Sector Protect (Note 2) L H L V

ID

Sector Address,

A6 = L, A1 = H,

A0 = L

D

IN

XX

Sector Unprotect (Note 2) L H L V

ID

Sector Address,
A6 = H, A1 = H,

A0 = L

D

IN

XX

Temporary Sector Unprotect X X X V

ID

A

IN

D

IN

D

IN

High-Z

Am29LV800B 9

PRELIMINARY

Writing Commands/Command Sequences

To write a command or command sequence (which in­cludes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to V

IL

, and OE# to VIH.

For program operations, the BYT E# pin determin es
whether the device accepts program data in bytes or

words. Refer to “Word/Byte Configuration” for more
information.

The device features an Unlock Bypass mode to facili-
tate faster programming. Once the device enters the Un­lock Bypass mode, only two write cycles are required to
program a word or byte, instead of four. The “Word/Byte
Program Command Sequence” section has details on
programming data to the device using both standard and
Unlock Bypass command sequences.

An erase operation can erase one sect or, multiple sec­tors, or the entire device. Tables 2 and 3 indicate the
address space that each sector occupies. A “sector ad­dress” consists of the addres s bits required t o un iquely
select a sector. The “Command Definitions” section
has details on erasing a sector or the entire chip, or
suspending/resuming the erase operation.

After the system writes the autoselect command se­quence, the device enters the autoselect mode. The
system can then read autoselect codes from the inter­nal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.

I

CC2

in the DC Characteristics table represents the ac­tive current specification for the w rite mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.

Program and Erase Operation Status

During an erase or program operation, the system ma y
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and I

CC

read specifications apply. Refer to “Write Operation
Status” for more information, and to “AC Characteris­tics” for timing diagrams.

Standby Mode

When the system is not reading or writing to the device ,
it can place the device in the standby mode. In this
mode, current consumption is great ly reduc ed, and the
outputs are placed in the high impedance state, inde­pendent of the OE# input.

The device enters the CMOS standby mode when the
CE# and RESET# pin s are both held at V

CC

± 0.3 V.
(Note that this is a more restricted voltage range than
V

IH

.) If CE# and RESET# ar e held a t VIH, but not within

V

CC

± 0.3 V, the device will be in the standb y mode, b ut

the standby current will be grea ter. The device requires
standard access time (t

CE

) for read access when the
device is in either of these standby modes, before it is
ready to read data.

If the device is deselected during erasure or program­ming, the device draws active current until the
operation is completed.

In the DC Characteristics table, I

CC3

and I

CC4

repre-

sents the standby current specification.

Automatic Sleep Mode

The automatic sleep mode minimizes Flash device
energy consumption. The device automatically
enables this mode when addres ses remain stable for
t

ACC

+ 30 ns. The automatic sleep mode is
independent of the CE#, WE#, and OE# control
signals. Standard address access timings provide new
data when addresses are chan ged. While in sleep
mode, output data is latched and always available to
the system. I

CC4

in the DC Characteristics table
represents the automatic sleep mode current
specification.

RESET#: Hardware Reset Pin

The RESET# pin provides a hardw are method of reset­ting the device to reading array data. When the RE­SET# pin is driven low for at least a period of t

RP

, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the inter nal state ma­chine to reading array data. The operation that was in­terrupted should be reinitiated once the device is ready
to accept another command sequence, to ensure data
integrity.

Current is reduced for the duration of the RESET#
pulse. When RESET# is held at V

SS

±0.3 V, the device

draws CMOS standby c urrent (I

CC4

). If RESET# is held

at V

IL

but not within VSS±0.3 V, the standby current will

be greater.
The RESET# pin may be tied to the system reset cir-

cuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up
firmware from the Flash memory.

If RESET# is asserted during a program or erase op­eration, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of t

READY

(during Embedded Algorithms). The
system can thus monitor RY/BY# to determine
whether the reset oper ation is c omplete . If RESE T# is
asserted when a program or erase oper ation is not e x­ecuting (RY/BY# pin is “1”), the reset operation is
completed within a time of t

READY

(not during Embed-

ded Algorithms). The system can read data t

RH

after

the RESET# pin returns to V

IH

.

10 Am29LV800B

PRELIMINARY

Refer to the AC Characteristics tables for RESET# pa­rameters and to Figure 14 for the timing diagram.

Output Disable Mode

When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in t he high imped­ance state.

Table 2. Am29LV800BT Top Boot Block Sector Address Table

Sector A18 A17 A16 A15 A14 A13 A12

Sector Size

(Kbytes/
Kwords)

Address Range (in hexadecim al )

(x8)

Address Range

(x16)

Address Range

SA00000XXX 64/32 00000h–0FFFFh 00000h–07FFFh
SA10001XXX 64/32 10000h–1FFFFh08000h–0FFFFh
SA20010XXX 64/32 20000h–2FFFFh10000h–17FFFh
SA30011XXX 64/32 30000h–3FFFFh18000h–1FFFFh
SA40100XXX 64/32 40000h–4FFFFh20000h–27FFFh
SA50101XXX 64/32 50000h–5FFFFh28000h–2FFFFh
SA60110XXX 64/32 60000h–6FFFFh30000h–37FFFh
SA70111XXX 64/32 70000h–7FFFFh38000h–3FFFFh
SA81000XXX 64/32 80000h–8FFFFh40000h–47FFFh

SA91001XXX 64/32 90000h–9FFFFh48000h–4FFFFh
SA101010XXX 64/32 A0000h–AFFFFh50000h–57FFFh
SA111011XXX 64/32 B0000h–BFFFFh58000h–5FFFFh
SA121100XXX 64/32 C0000h–CFFFFh60000h–67FFFh
SA131101XXX 64/32 D0000h–DFFFFh68000h–6FFFFh
SA141110XXX 64/32 E0000h–EFFFFh70000h–77FFFh
SA1511110XX 32/16 F0000h–F7FFFh78000h–7BFFFh
SA161111100 8/4 F8000h–F9FFFh7C000h–7CFFFh
SA171111101 8/4 FA000h–FBFFFh7D000h–7DFFFh
SA18111111X 16/8 FC000h–FFFFFh7E000h–7FFFFh

Am29LV800B 11

PRELIMINARY

Table 3. Am29LV800BB Bottom Boot Block Sector Address Table

Note for Tables 2 and 3: Address range is A18:A-1 in byte mode and A18:A0 in word mode. See “Word/Byte Configuration”

section for more information.

Autoselect Mode

The autoselect mode provides manufacturer and de­vice identification, and sector protection verification,

through identifier codes output on DQ7–DQ0. This
mode is primarily intended for progr amming equipment
to automatically match a device to be progr ammed with
its correspondi ng programming al gorithm. However,
the autoselect codes can also be accessed in-system
through the command register.

When using programming equipment, the autoselect
mode requires V

ID

(11.5 V to 12.5 V) on address pin A9.

Address pins A6, A1, and A0 must be as shown in Table

4. In addition, when verifying sector protection, the sec-

tor address must appear on the appr opriate highest
order address bits (see Tables 2 and 3). Table 4 shows
the remaining address bits that are don’t care. When all
necessary bits have been set as required, the program­ming equipment may then read the corresponding iden­tifier code on DQ7–DQ0.

To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 5. This method
does not require V

ID

. See “Command Definitions” for

details on using the autoselect mode.

Sector A18 A17 A16 A15 A14 A13 A12

Sector Size

(Kbytes/
Kwords)

Address Range (in hexadecim al )

(x8)

Address Range

(x16)

Address Range

SA0000000X 16/8 00000h–03FFFh 00000h–01FFFh

SA10000010 8/4 04000h–05FFFh02000h–02FFFh

SA20000011 8/4 06000h–07FFFh03000h–03FFFh

SA300001XX 32/16 08000h–0FFFFh04000h–07FFFh

SA40001XXX 64/32 10000h–1FFFFh08000h–0FFFFh

SA50010XXX 64/32 20000h–2FFFFh10000h–17FFFh

SA60011XXX 64/32 30000h–3FFFFh18000h–1FFFFh

SA70100XXX 64/32 40000h–4FFFFh20000h–27FFFh

SA80101XXX 64/32 50000h–5FFFFh28000h–2FFFFh

SA90110XXX 64/32 60000h–6FFFFh30000h–37FFFh
SA100111XXX 64/32 70000h–7FFFFh38000h–3FFFFh
SA111000XXX 64/32 80000h–8FFFFh40000h–47FFFh
SA121001XXX 64/32 90000h–9FFFFh48000h–4FFFFh
SA131010XXX 64/32 A0000h–AFFFFh50000h–57FFFh
SA141011XXX 64/32 B0000h–BFFFFh58000h–5FFFFh
SA151100XXX 64/32 C0000h–CFFFFh60000h–67FFFh
SA161101XXX 64/32 D0000h–DFFFFh68000h–6FFFFh
SA171110XXX 64/32 E0000h–EFFFFh70000h–77FFFh
SA181111XXX 64/32 F0000h–FFFFFh78000h–7FFFFh

12 Am29LV800B

PRELIMINARY

Table 4. Am29LV800B Autoselect Codes (High Voltage Method)

L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.

Sector Protection/Unprotection

The hardware sector protection feature disables both
program and erase operations in any sect or. The hard­ware sector unprotection feature re-enables both pro­gram and erase operations in previously protected
sectors.

The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device

through AMD’s ExpressFlash™ Servic e. Contact an
AMD representative for details.

It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details.

Sector Protection/unprotection can be implemented via
two methods.

The primary method requires V

ID

on the RESET# pin
only, and c an be implemented either in-system or via
programming equipment. Figure 2 shows the algo­rithms and Figure 23 shows the timing diagram. This
method uses standard m icroprocessor bus cycle tim­ing. For sector unprotect, all unprotected sectors must
first be protected prior to the first sector unpro tect write
cycle.

The alternate method intended on ly for programming
equipment requires V

ID

on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 v olt-only AMD flash de vices. Pub­lication number 20536 contains further details; contact
an AMD representative to request a copy.

Temporary Sector Unprotect

This feature allows temporary unpr otection of previ­ously protected sectors to change data in-system. The

Sector Unprotect mode is activated by setting the RE­SET# pin to V

ID

. During this mode, formerly protected
sectors can be programmed or erased b y selecting the
sector addresses. Once V

ID

is removed from the RE­SET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 22 shows the tim ing diagrams, for this feature.

Figure 1. Temporary Sector Unprotect Operation

Description Mode CE# OE# WE#

A18

to

A12

A11

to

A10 A9

A8

to

A7 A6

A5

to

A2 A1 A0

DQ8

to

DQ15

DQ7

to

DQ0

Manufacturer ID: AMD L L H X X V

ID

XLXLL X 01h

Device ID:
Am29LV800B
(Top Boot Block)

Word L L H

XXV

ID

XLXLH

22h DAh

Byte L L H X DAh

Device ID:
Am29LV800B
(Bottom Boot
Block)

Word L L H

XXV

ID

XLXLH

22h 5Bh

Byte L L H X 5Bh

Sector Protection V erification L L H SA X V

ID

XLXHL

X

01h

(protected)

X

00h

(unprotected)

START

Perform Erase or

Program Operations

RESET# = V

IH

Temporary Sector

Unprotect Completed

(Note 2)

RESET# = V

ID

(Note 1)

Notes:

1. All protected sectors unprotected.

2. All previously protected sectors are protected once
again.

21490E-5

Am29LV800B 13

PRELIMINARY

Figure 2. In-System Sector Protect/Unprotect Algorithms

Sector Protect:

Write 60h to sector

address with

A6 = 0, A1 = 1,

A0 = 0

Set up sector

address

Wait 150 µs

Verify Sector

Protect: Write 40h

to sector address

with A6 = 0,

A1 = 1, A0 = 0

Read from

sector address

with A6 = 0,

A1 = 1, A0 = 0

START

PLSCNT = 1

RESET# = V

ID

Wait 1 µs

First Write

Cycle = 60h?

Data = 01h?

Remove V

ID

from RESET#

Write reset

command

Sector Protect

complete

Yes

Yes

No

PLSCNT

= 25?

Yes

Device failed

Increment

PLSCNT

Temporary Sector

Unprotect Mode

No

Sector Unprotect:

Write 60h to sector

address with

A6 = 1, A1 = 1,

A0 = 0

Set up first sector

address

Wait 15 ms

Verify Sector

Unprotect: Write

40h to sector
address with

A6 = 1, A1 = 1,

A0 = 0

Read from

sector address

with A6 = 1,

A1 = 1, A0 = 0

START

PLSCNT = 1

RESET# = V

ID

Wait 1 µs

Data = 00h?

Last sector

verified?

Remove V

ID

from RESET#

Write reset

command

Sector Unprotect

complete

Yes

No

PLSCNT

= 1000?

Yes

Device failed

Increment

PLSCNT

Temporary Sector

Unprotect Mode

No

All sectors

protected?

Yes

Protect all sectors:

The indicated portion

of the sector protect

algorithm must be

performed for all

unprotected sectors

prior to issuing the

first sector

unprotect address

Set up

next sector

address

No

Yes

No

Yes

No

No

Yes

No

Sector Protect

Algorithm

Sector Unprotect

Algorithm

First Write

Cycle = 60h?

Protect another

sector?

Reset

PLSCNT = 1

21490E-6