AMD Advanced Micro Devices AM29LV010BT-70FIB, AM29LV010BT-70FI, AM29LV010BT-70FEB, AM29LV010BT-70FE, AM29LV010BT-70FC Datasheet
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ADVANCE INFORMATION
Am29LV010B
1 Megabit (128 K x 8-Bit)
CMOS 3.0 Volt-only Uni form Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— Full voltage range: 2.7 to 3. 6 volt read and write
operations for battery-powered applications
— Regulated voltage r ange: 3.0 to 3.6 v olt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■ Manufactured on 0.35 µm process technology
■ High performance
— Full voltage range: ac cess times as f ast as 55 ns
— Regulated voltage range: access times as fast
as 45 ns
■ Ultra low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— Eight 16 Kbyte
— Supports full chip erase
— Sector Protection features:
Hardware method of loc king a sector to prevent
any program or erase operat ions within that
sector
Sectors can be locked in-system or via
programming equipment
T emporary Sector Unprotect feat ure allows code
changes in previously locked sectors
■ Unlock Bypass Mode Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per
sector
■ Package option
— 32-pin TSOP
— 32-pin PLCC
■ Compatibility with JEDEC standards
— Pinout and software compatible with single-
power supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase operation completion
■ Erase Suspend/Erase Resume
— Supports reading data from or programming
data to a sector that is not being erased
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you ev aluate this product. AMD reserves the right to change or dis continue work on thi s proposed
product without notice.
Publication# 22140 Rev: A Amendment/0
Issue Date: April 1998
ADVANCE INFORMATION
GENERAL DESCRIPTION
The Am29LV010B is a 1 Mbit, 3.0 Volt-only Flash
memory devic e organized as 131,072 bytes. T he
Am29LV010B has a uniform sector architecture.
The device is offered in 32-pin PLCC and 32-pin TSOP
packages. The byte-wide (x8) data appears on DQ7–
DQ0. All read, erase, and program operations are
accomplished using only a single power supply. The
device can also be programmed in s tandard EPROM
programmers.
The standard Am29LV010B offers access times of 45,
55, 70, and 120 ns (90 and 100 ns parts are also available), allowing high speed microprocessors to operate
without wait states. To eliminate bus contention, the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a single power supply (2.7
V–3.6V) for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command regis ter using
standard micropr ocessor wri te timings. Register co ntents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requir ing only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an in ternal algorithm that auto matically
preprograms the arra y (if it is not already progr ammed)
before e xecuting the er ase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by reading the DQ7 (Data#
Polling) and DQ6 (toggle) status bits. After a program
or erase cycle has been completed, the de vice is ready
to read array data or accept another command.
The sector erase ar chitecture allo ws memo ry secto rs
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures includ e a low
detector that automatically in hibits write opera-
V
CC
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True backgro und eras e can thus be achie ved.
The device off ers two power-sa ving f eatures. When addresses have been stable for a specified amount of
time, the device enters the automatic sleep m ode.
The system can also place the de vice into the standby
mode. Power consumption is greatly redu ced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bi t s w i th i n a
sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron
injection.
Am29LV010B 2
ADVANCE INFORMATION
PRODUCT SELECTOR GUIDE
Family Part Number Am29LV010B
Speed Options
Max access time, ns (t
Max CE# access time, ns (tCE) 45 55 70 120
Max OE# access time, ns (tOE) 30 30 35 50
Regulated Voltage Range: VCC =3.0–3.6 V -45R
Full Voltage Range: VCC = 2.7–3.6 V -55 -70 -120
) 45 55 70 120
ACC
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0
–
DQ7
V
CC
V
SS
WE#
CE#
OE#
State
Control
Command
Register
PGM Voltage
Generator
Sector Switches
Erase Voltage
Generator
Chip Enable
Output Enable
Logic
STB
Input/Output
Buffers
Data
Latch
A0–A16
VCC Detector
Timer
STB
Address Latch
Y-Decoder
X-Decoder
Y-Gating
Cell Matrix
22140A-1
3 Am29LV010B
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