AMD Advanced Micro Devices AM29F200AT-90DPI1, AM29F200AT-90DPE1, AM29F200AT-90DPC1, AM29F200AT-90DGI1, AM29F200AT-90DGE1 Datasheet
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SUPPLEMENT
Am29F200A Known Good Die
2 Megabit (25 6 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Sect ored Flash Memory—Die Revision 1
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10% for read and write operations
— Minimizes system level power requirements
■ High performance
— 90 or 120 ns access time
■ Low power consumption
— 20 mA typical active read current (byte mode)
— 28 mA typical active read current for
(word mode)
— 30 mA typical program/erase current
—1 µA typical standby current
■ Sector erase architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
three 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
three 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to
prevent any program or erase operations within
that sector
Sectors can be locked via programming
equipment
T emporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Top or bottom boot block configurations
available
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 100,000 write/erase cycles guaranteed
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash
— Superior inadvertent write protection
■ Data# Polling and Toggle Bit
— Detects program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Hardware method for detection of program or
erase cycle completion
■ Erase Suspend/Resume
— Supports reading data from a sector not being
erased
■ Hardware RESET# pin
— Resets internal state machine to the reading
array data
1/13/98
■ Tested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
Publicat ion# 21257 Rev: B Amendment/0
Issue Date: December 1997
SUPPLEMENT
GENERAL DESCRIPTION
The Am29F200A in Known Good Die (KGD) form is a
2 Mbit, 5.0 Volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability and quality as AMD products in packaged form.
Am29F200A Features
The Am29F200 A is organiz ed as 262,144 bytes of 8
bits each or 131,072 words of 16 bits each. The 8-bit
data appears on DQ0-DQ7; the 16-bit data appears on
DQ0-DQ15. This device is desi gned to be programmed
in-system with the standard system 5.0 Volt V
ply . A 12.0 vol t V
is not required for program or er ase
PP
operations.
The standard Am29F200A in KGD form offers an ac-
cess time of 90 or 120 ns, allowing high-speed microprocessors to operate without wait states. To eliminate
bus contention the device has separate chip enable
(CE#), write e nable (WE# ), and output enab le (OE#)
controls.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
The device is entir ely command set compatibl e with the
JEDEC single-power-sup ply Flash standard . Commands are written to the command register using standard microprocesso r write timings. Re gister contents
serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequ ence. This initiates th e Embedded
Program algorithm —an in ternal algorit hm that automatically times the program pulse widths and verifies
proper cell margin.
Device e rasure occurs by exe cuting t he eras e command seque nce. Th is initia tes the Embedded Erase
algorithm—an internal algo rithm that automatically
preprograms the array (if it is not already pro-
CC
sup-
grammed) before executing the erase operation. During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
The host system can detect whethe r a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6/
DQ2 (toggle) status bits. After a pr ogram or e rase
cycle has been completed, the device is ready to read
array data or accept another command.
The sector erase architecture allow s memory sector s
to be erased and reprogrammed without affecting the
data content s of other secto rs. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
detector that automatically inhibits write opera-
V
CC
tions during power t ransitions. The h ardware sector
protectio n feat ure disables both program and e rase
operations in any combination of the sectors of memory . This can be achieved via programming equipment.
The Erase Suspen d feature enab les the user t o put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. Tr ue bac kground erase can thus be achieved.
The hardware RESE T# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby mode.
Power consumption is greatly reduced in this mode.
AMD’s Flash technology combines yea rs of Flas h memory manufacturing experience to produce the highest levels of quality , reliability and cost effectiveness. The device
electrically erases al l b i t s wi t hi n a se c t or s i mu l ta n e ous ly via Fowl er-N ordh eim t unn elin g. T he dat a is
programmed using hot electron injection.
ELECTRICAL SPECIFICATIONS
Refer to the Am29F200A data sheet, publication
number 20380, for full electrical specifications on t he
Am29F200A.
PRODUCT SELECTOR GUIDE
Family Part Number Am29F200A KGD
Speed Option (V
Max access time, ns (t
Max CE# access time, ns (t
Max OE# access time, ns (t
2 Am29F200A Known Good Die 1/13/98
= 5.0 V ± 10%) -90 -120
CC
) 90 120
ACC
) 90 120
CE
)3550
OE
DIE PHOTOGRAPH
Orientation relative
to top left corner of
Gel-Pak
SUPPLEMENT
Orientation relative
to leading edge of
tape and reel
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1/13/98 Am29F200A Known Good Die 3
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