FINAL
Publication# 10205 Rev: G Amendment/0
Issue Date: May 1998
Am27C010
1 Megabit (128 K x 8-Bit) CMOS EPROM
DISTINCTIVE CHARACTERISTICS
■ Fast access time
— Speed options as fast as 45 ns
■ Low power consumption
— 20 µA typical CMOS standby current
■ JEDEC-approved pinout
■ Single +5 V power supply
■ ±10% power supply tolerance standard
■ 100% Flashrite™ programming
— Typical programming time of 16 seconds
■ Latch-up protected to 100 mA from –1 V to
V
CC
+ 1 V
■ High noise immunity
■ Versatile features for simple interfacing
— Both CMOS and TTL input/output compatibility
— Two line control functions
■ Standard 28-pin DIP, PDIP, and 32-pin PLCC
packages
GENERAL DESCRIPTION
The Am27C010 is a 1 Megabit, ultravio let erasable programmable read-only memory. It is organized as 128K
words by 8 bits per word, operates from a single +5 V
supply, has a static standby mode, and features fast
single address location programming. Products are
available in windowed ceramic DIP packages, as well
as plastic one time programmable (OTP) PDIP and
PLCC packages.
Data can be typically accessed in less than 45 ns, allowing high-p erformance m icroproces sors to ope rate
without any WAIT states. The device offers separate
Output Enable (OE# ) and Chip Enable (CE#) controls,
thus eliminating bus contention in a mul tiple bus microprocessor system.
AMD’s CMOS process technology provides high
speed, low power, and high noise immunity. Typical
power consumption is only 100 mW in active mode,
and 100 µW in standby mode.
All signals are TTL levels, including programming signals. Bit locations may be programmed singly, in
blocks, or at random. The device suppor ts AMD’s
Flashrite programming alg orithm (100 µs pulses), resulting in a typical programming time of 16 seconds.
BLOCK DIAGRAM
10205G-1
A0–A16
Address
Inputs
PGM#
CE#
OE#
V
CC
V
SS
V
PP
Data Outputs
DQ0–DQ7
Output
Buffers
Y
Gating
1,048,576
Bit Cell
Matrix
X
Decoder
Y
Decoder
Output Enable
Chip Enable
and
Prog Logic