Alpha & Omega Semiconductor AOP605 Service Manual
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AOP605
Complementary Enhancement Mode Field Effect Transistor
General Description
Features
n-channel p-channel
The AOP605 uses advanced trench technology to
provide excellent R
and low gate charge. The
DS(ON)
(V) = 30V -30V
V
DS
I
= 7.5A (V
D
= 10V) -6.6A (VGS = -10V)
GS
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
R
DS(ON)
Standard Product AOP605 is Pb-free (meets ROHS
& Sony 259 specifications). AOP605L is a Green
Product ordering option. AOP605 and AOP605L are
electrically identical.
1
8
S2
G2
S1
G1
2
3
4
D2
7
D2
6
D1
5
D1
PDIP-8
Absolute Maximum Ratings T
Parameter Max n-channel
Drain-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
TA=25°C
TA=70°C
B
=25°C
T
A
T
=70°CPower Dissipation
A
Junction and Storage Temperature Range -55 to 150-55 to 150
=25°C unless otherwise noted
A
Symbol Max p-channel Units
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
< 28mΩ (V
< 43mΩ (V
G2
n-channel
= 10V) < 35mΩ (VGS = -10V)
GS
= 4.5V) < 58mΩ (VGS = -4.5V)
GS
D2
S2
G1
p-channel
30 -30
±20Gate-Source Voltage
7.5
6
30
2.5
1.6
D1
S1
±20
-6.6
-5.3
-30
2.5
1.6
V
V
A
W
°C
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
40 50
67 80
33 40
Units
°C/W
°C/W
°C/W
Thermal Characteristics: p-channel
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
Symbol Typ Max
R
θJA
R
θJL
38 50
66 80
30 40
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOP605
n-channel MOSFET Electrical Characteristics (T
Symbol Min Typ Max Units
Parameter Conditions
=25°C unless otherwise noted)
J
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
=24V, VGS=0V
V
Zero Gate Voltage Drain Current
Gate-Body leakage current V
Gate Threshold Voltage V
On state drain current V
DS
=0V, VGS=±20V
DS
DS=VGS ID
=10V, VDS=5V
GS
=10V, ID=7.5A
V
GS
=250µA
Static Drain-Source On-Resistance
V
=4.5V, ID=6.0A
GS
V
Forward Transconductance
Body Diode Forward Voltage I
=5V, ID=7.5A
DS
=1A, VGS=0V
S
Maximum Body-DiodeContinuous Current
T
J
=125°C
T
J
=55°C
30 V
1
5
µA
100 nA
1 1.8 3 V
30 A
22.6 28
33 43
mΩ
m
12 16 S
0.76 1 V
4A
Ω
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance.
Reverse Transfer Capacitance
Gate resistance V
V
=0V, VDS=15V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
GS
680 820 pF
102 pF
77 pF
3 3.6 Ω
SWITCHING PARAMETERS
Q
(10V)
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 3 : June 2005
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery time
Body Diode Reverse Recovery charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
θJA
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
V
=4.5V, VDS=15V, ID=7.5A
GS
V
=10V, VDS=15V, RL=2.0Ω,
GS
R
=6Ω
GEN
I
=7.5A, dI/dt=100A/µs
F
=7.5A, dI/dt=100A/µs
I
F
and lead to ambient.
θJL
13.84 16.6 nC
6.74 8.1 nC
1.82 nC
3.2 nC
4.6 ns
4.1 ns
20.6 ns
5.2 ns
16.5 20
7.8
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AOP605
L
V
GS
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNE
30
10V
25
4.5V
6V
5V
4V
20
15
(A)
D
I
3.5V
10
5
VGS=3V
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
60
50
)
Ω
40
=4.5V
(m
30
DS(ON)
R
20
VGS=10V
10
0 5 10 15 20
(Amps)
I
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
16
VDS=5V
12
(A)
D
I
8
125°C
4
25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
(Volts)
GS
Figure 2: Transfer Characteristics
1.7
1.6
ID=7.5A
VGS=10V
1.5
1.4
VGS=4.5V
1.3
1.2
1.1
1
Normalized On-Resistance
0.9
0.8
0 50 100 150 200
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
70
)
Ω
(m
DS(ON)
R
60
50
40
30
ID=7.5A
125°C
25°C
20
10
246810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+01
1.0E+00
1.0E-01
1.0E-02
Amps
S
I
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0
V
(Volts)
SD
Figure 6: Body diode characteristics
Alpha & Omega Semiconductor, Ltd.
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