ALPHA & OMEGA SEMICONDUCTOR aon7408 Datasheet

AON7408

Symbol

Symbol

Typ

Max

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

A

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Datasheet pdf - http://www.DataSheet4U.net/

30V N-Channel MOSFET

General Description

The AON7408 uses advanced trench technology and
design to provide excellent R
charge. This device is suitable for use in general
purpose applications.

DS(ON)

with low gate

Features

VDS(V) = 30V
ID= 23A (VGS= 10V)
R
R

< 20mΩ (VGS= 10V)

DS(ON)

< 32mΩ (VGS= 4.5V)

DS(ON)

100% UIS Tested!

Top View Bottom View

DFN 3x3 EP

Top View

1

2
3

4

Pin 1

A

Maximum UnitsParameter

Drain-Source Voltage 30

Continuous Drain
Current

B

Pulsed Drain Current
Continuous Drain

Current

A

TC=25°C
TC=100°C

C

TA=25°C
TA=70°C
TC=25°C

B

Power Dissipation

TC=100°C
TA=25°C

A

TA=70°C

Junction and Storage Temperature Range

V

DS

V

GS

I

D

I

DM

I

DSM

P

D

P

DSM

TJ, T

STG

23
15
64
10

16.7

3.1

-55 to 150

D

8

7
6

5

G

S

V
V±20Gate-Source Voltage

A

8

7

W

2Power Dissipation

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

Alpha & Omega Semiconductor, Ltd.

t ≤ 10s

Steady-State

B

Steady-State

R

θJA

R

θJC

25 40
62 75

6.2 7.5

°C/W
°C/W
°C/W

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AON7408

t

2.8

ns

V

=10V, V

=15V, R

=1.5Ω,

Turn-On Rise Time

tr2.8

ns

VGS=10V, V

DS

=15V, R

L

=1.5Ω,

Turn-On Rise Time

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Datasheet pdf - http://www.DataSheet4U.net/

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V
VDS=30V, VGS=0V

VDS=0V, VGS= ±20V
VDS=V

GS , ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=10A

VGS=4.5V, ID=5A
VDS=5V, ID=10A
IS=1A,VGS=0V

30 V

TJ=55°C 5

±100

1.5 2.1 2.6 V
64 A

15.3 20

TJ=125°C 23.3 30

22.7 32
17 S

0.75 1 V

3.8 A

1

µA

nA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

373 448 pF

67 pF
41 pF

1.2 1.8 Ω

SWITCHING PARAMETERS

Q
Q
Q
t

D(on)

g
gs
gd

Total Gate Charge
Gate Source Charge
Gate Drain Charge

VGS=4.5V, VDS=15V, ID=10A

Turn-On DelayTime

7.1 8.6 nC

1.2 nC

1.6 nC

4.3 ns

R

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
based on T
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. The maximum current rating is limited by bond-wires.
Rev4: Apr-2011

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device in a still air environment with TA=25°C. The power dissipation P

θJA

=150°C, using t ≤ 10s junction-to-ambient thermal resistance.

J(MAX)

is the sum of the thermal impedence from junction to case R

θJA

J(MAX)

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

=3Ω

GEN

IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=100A/µs

=150°C.

J(MAX)

and case to ambient.

θJC

15.8 ns
3 ns

10.5 12.6

4.5 nC

and current rating I

DSM

DSM

ns

are

Alpha & Omega Semiconductor, Ltd.

Alpha & Omega Semiconductor, Ltd.

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