ALPHA & OMEGA SEMICONDUCTOR AON7406 Datasheet
General Description Product Summary
V
Symbol
V
V
Absolute Maximum Ratings T
=25°C unless otherwise noted
Drain-Source Voltage
30
V
DS
A D
V
Drain-Source Voltage
30
A
AON7406
30V N-Channel MOSFET
• The AON7406 uses advanced trench technology and
design to provide excellent R
with low gate charge.
DS(ON)
This device is suitable for use in SMPS and general
purpose applications.
DS
ID (at VGS=10V) 25A
R
R
(at VGS=10V) < 17mΩ
DS(ON)
(at VGS=4.5V) < 23mΩ
DS(ON)
Typical ESD protection HBM Class 2
• RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
Pin 1
DFN 3x3A
A
Pin 1
Top View
S
S
S
G
D
D
D
D
Top View Bottom View
Maximum UnitsParameter
V
GS
C
C
B
A
TC=25°C
TC=100°C
TA=25°C
TA=70°C
C
TC=25°C
TC=100°C
TA=25°C
TA=70°C
I
D
I
DM
I
DSM
IAS, I
EAS, E
P
D
P
DSM
TJ, T
AR
AR
STG
Continuous Drain
Current
Continuous Drain
Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range -55 to 150
25
15
50Pulsed Drain Current
9
7
18
15.5
6
3.1
2
30V
D
G
S
V±20Gate-Source Voltage
A
A
A19
mJ
W
W
°C
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Parameter Typ Max
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJC
30
60
6.6
40
75
8
www.aosmd.com Page 1 of 6
Units
°C/W
°C/W
°C/W
tr3.5
ns
VGS=10V, V
=15V, R
=1.67
Ω
,
Turn-On Rise Time
Electrical Characteristics (TJ=25°C unless otherwise noted)
AON7406
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
VDS=0V, VGS= ±16V
VDS=V
VGS=10V, VDS=5V
VGS=10V, ID=9A
GS ID
=250µA
1.2 1.8 2.4 V
50 A
14 17
TJ=125°C 20 24
VGS=4.5V, ID=8A
VDS=5V, ID=9A
IS=1A,VGS=0V
18 23 mΩ
40 S
0.75 1 V
µA
10 µA
mΩ
15 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
600 740 888 pF
77 110 145 pF
50 82 115 pF
0.5 1.1 1.7 Ω
SWITCHING PARAMETERS
Qg(10V) 12 15 18 nC
Qg(4.5V) 6 7.5 9 nC
Q
gs
Q
gd
t
D(on)
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
Power dissipation P
application depends on the user's specific board design.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
is based on R
DSM
is the sum of the thermal impedence from junction to case R
θJA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
θJA
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
J(MAX)
VGS=10V, VDS=15V, ID=9A
2.5 nC
3 nC
5 ns
DS
R
=3Ω
GEN
L
19 ns
3.5 ns
IF=9A, dI/dt=500A/µs
IF=9A, dI/dt=500A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and case to ambient.
θJC
14
6
8 10 ns
18 22
nC
Rev.6.0: July 2013 www.aosmd.com Page 2 of 6
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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