ALPHA & OMEGA SEMICONDUCTOR AON7402 Datasheet

General Description Product Summary

V

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

V

GS

A

V

±20

Gate-Source Voltage

A D

AON7402

30V N-Channel MOSFET

The AON7402 uses advanced trench technology to
provide excellent R

with low gate charge.

DS(ON)

This device is suitable for high side switch in SMPS and
general purpose applications.

DS

ID (at VGS=10V) 39A
R
R

(at VGS=10V) < 10mΩ

DS(ON)

(at VGS = 4.5V) < 15mΩ

DS(ON)

30V

100% UIS Tested!
100% Rg Tested!

DFN 3x3 EP

Top View Bottom View

Top View Bottom View

DFN 3x3 EP

Pin 1

Pin 1

A

S

S

S

S

S

S

G

G

Top View

Top View

1

1

2

2

3

3

4

4

8

8

D

D

7

7

D

D

6

6

D

D

G

5

5

G

D

D

D

D

S

S

Maximum UnitsParameter

Drain-Source Voltage 30

Continuous Drain
Current

Continuous Drain
Current

Avalanche Current
Repetitive avalanche energy L=0.1mH

TC=25°C
TC=100°C

C

TA=25°C
TA=70°C

C

C

TC=25°C

B

Power Dissipation

TC=100°C
TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

I

D

I

DM

I

DSM

I

AR

E

AR

P

D

P

DSM

TJ, T

STG

39
24
80Pulsed Drain Current

13.5

10.8

20
26

10.4

3.1
2

mJ

V

A

A
A20

W

W

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Parameter Typ Max

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJC

30
60

40
75

4

4.8

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Units

°C/W
°C/W
°C/W

tr3

ns

Turn-On Rise Time

Electrical Characteristics (TJ=25°C unless otherwise noted)

AON7402

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A

1.2 1.7 2.2 V
80 A

±100

8.6 10

TJ=125°C 13 16
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V

12.1 15 mΩ
43 S

0.7 1 V

µA

mΩ

30 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

0.4 0.8 1.6 Ω

770 pF
240 pF

77 pF

SWITCHING PARAMETERS

Qg(10V) 14.8 17.8 nC
Qg(4.5V) 7.1 8.5 nC
Q

gs

Q

gd

t

D(on)

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime

VGS=10V, VDS=15V, ID=20A

2.2 nC

3.1 nC
5 ns

VGS=10V, VDS=15V, RL=0.75Ω,
R

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
application depends on the user's specific board design.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

GEN

=3Ω

18 ns

3 ns

IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and case to ambient.

θJC

11
23 nC

ns

Rev 6: Nov 2011 www.aosmd.com Page 2 of 6

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.