ALPHA & OMEGA SEMICONDUCTOR AON6970 Datasheet

AON6970

30V Dual Asymmetric N-Channel AlphaMOS

Q1

Q2

Symbol

Absolute Maximum Ratings T

=25°C unless otherwise noted

V

A D

Gate-Source Voltage

V66±20±20

General Description Product Summary

• Latest Trench Power AlphaMOS (αMOS LV) technology

• Very Low RDS(on) at 4.5V

GS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

Application 100% Rg Tested

• DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industrial

V

DS

ID (at VGS=10V) 58A 85A
R
R

(at VGS=10V) <5.4mΩ <1.5mΩ

DS(ON)

(at VGS=4.5V) <8.5mΩ <2.3mΩ

DS(ON)

100% UIS Tested

30V 30V

DFN5X6D

Top View Bottom View

PIN1

G2

S2

S2

S2

PHASE

(S1/D2)

A

D1

D1

PIN1

G1

D1

D1

Top View

PHASE

S1/D2

Q2: SRFET
Soft Recovery MOSFET:

Integrated Schottky Diode

TM

Max Q1Parameter

Drain-Source Voltage

Continuous Drain
Current

Pulsed Drain Current
Continuous Drain

Current
Avalanche Current
Avalanche Energy L=0.05mH

TC=25°C
TC=100°C

C

TA=25°C
TA=70°C

C

C

VDS Spike V

TC=25°C

B

Power Dissipation

TC=100°C
TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150

V

DS
GS

I

D

I

DM

I

DSM

I

AS

E

AS
SPIKE

P

D

P

DSM

TJ, T

30

58 85
36

135

24
19
35
31 106
36 36
31
12

5 4.1

3.2 2.6

STG

Bottom View

D1 S1/D2

Max Q2 Units

V

A

340

42
33
65

A
A

mJ

V 100ns
78
31

W

W
°C

Thermal Characteristics
Parameter Symbol Typ Q1 Typ Q2 Max Q1 Max Q2

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Rev0 : Sep 2012 www.aosmd.com Page 1 of 10

A

t ≤ 10s
Steady-State
Steady-State

Units

R

θJA

R

θJC

20 25 25 30
50 56 60 67

3.3 1.2 4 1.6

°C/W
°C/W
°C/W

t

17

ns

R

=3

Ω

Turn-Off DelayTime

Q1 Electrical Characteristics (TJ=25°C unless otherwise noted)

AON6970

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 1

TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA

VGS=10V, ID=20A

1.3 1.8 2.3 V

±100 nA

4.4 5.4

TJ=125°C 6.8 8.3
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V

6.7 8.5 mΩ
80 S

0.7 1 V
35 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1171 pF

284 pF

59 pF

0.3 0.6 0.9 Ω

SWITCHING PARAMETERS

Qg(10V) 17 23 nC
Qg(4.5V) 8 11 nC
Q

gs

Q

gd

t

D(on)

t

r
D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
depends on the user's specific board design.
B. The power dissipation PDis based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time

Turn-Off Fall Time
Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

VGS=10V, VDS=15V, ID=20A

4.7 nC
2 nC

6.5 ns

VGS=10V, VDS=15V, RL=0.75Ω,

GEN

15.5 ns

2.5 ns

IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and case to ambient.

θJC

12.3

22.5 nC

ns

Rev0 : Sep 2012 www.aosmd.com Page 2 of 10

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Q1-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

Voltage (Note E)

125°C

Voltage (Note E)

125°C

(Note E)

AON6970

100

10V

80

4.5V

6V

60

(A)

D

I

40

20

VGS=3.0V

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

VDS(Volts)

10

8

Ω

Ω)

Ω

Ω

6

(m

4

DS(ON)

R

VGS=4.5V

VGS=10V

2

0

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and Gate

ID(A)

3.5V

4V

100

VDS=5V

80

60

(A)

D

I

40

25°C

20

0

0 1 2 3 4 5 6

Figure 2: Transfer Characteristics (Note E)

VGS(Volts)

1.8

1.6

VGS=10V
I

=20A

1.4

1.2
VGS=4.5V

1

Normalized On-Resistance

ID=20A

0.8

0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

Temperature (°C)

14

12

10

Ω

Ω)

Ω

Ω

8

(m

6

DS(ON)

R

4

2

25°C

25°C

0

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS(Volts)

(Note E)

ID=20A

ID=11.5A

125°C

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Figure 6: Body-Diode Characteristics (Note E)

VSD(Volts)

Rev0 : Sep 2012 www.aosmd.com Page 3 of 10