ALPHA & OMEGA SEMICONDUCTOR AON6716 Datasheet

General Description Product Summary

VDS30V

Symbol

A D

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

SRFET

TM

1

2

3

4

8

7

6

5

AON6716

30V N-Channel MOSFET

SRFETTM AON6716 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R

,and low gate charge. This device is

DS(ON)

suitable for use as a low side FET in SMPS, load
switching and general purpose applications.

ID (at VGS=10V) 85A
R
R

(at VGS=10V) < 2.8mΩ

DS(ON)

(at VGS = 4.5V) < 4.2mΩ

DS(ON)

100% UIS Tested
100% Rg Tested

DFN5X6

Top View Bottom View

PIN1

A

Top View

G

D

SRFET
Soft Recovery MOSFET:

Integrated Schottky Diode

S

TM

Maximum UnitsParameter

Drain-Source Voltage 30

Continuous Drain

G

Current

Continuous Drain
Current

Avalanche Current
Repetitive avalanche energy L=0.1mH

TC=25°C
TC=100°C

C

TA=25°C
TA=70°C

C

C

TC=25°C

B

Power Dissipation

TC=100°C
TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

I

DSM

I

AR

E

AR

P

D

P

DSM

TJ, T

STG

85
67

310Pulsed Drain Current

23
18

174

83
33

2.3

1.4

mJ

V
V±20Gate-Source Voltage

A

A
A59

W

W

Thermal Characteristics

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Rev 1: November 2010 www.aosmd.com Page 1 of 7

Parameter Typ Max

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJC

14
40

17
55

1

1.5

Units

°C/W
°C/W
°C/W

Electrical Characteristics (TJ=25°C unless otherwise noted)

AON6716

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

g

FS

V

SD

I

S

DSS

DS(ON)

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=250µA, VGS=0V

30 V

VDS=30V, VGS=0V 0.1

TJ=125°C 20
VDS=0V, VGS= ±20V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A

1.2 1.7 2.2 V

310 A

2.3 2.8

100 nA

TJ=125°C 3.4 4.1
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V

3.3 4.2 mΩ

120 S

0.45 0.7 V
85 A

mA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

3300 4100 4900 pF

560 800 1050 pF
240 400 560 pF

0.2 0.4 0.6 Ω

SWITCHING PARAMETERS

Qg(10V) 58 72 86 nC
Qg(4.5V) 29 36 43 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.

B. The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Total Gate Charge
Total Gate Charge
Gate Source Charge

VGS=10V, VDS=15V, ID=20A

Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,
R

GEN

Turn-Off Fall Time
Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse ratin g.

J(MAX)

IF=20A, dI/dt=500A/µs
IF=20A, dI/dt=500A/µs

J(MAX)

14 17 20 nC

7 12 17 nC

11 ns

5.5 ns

=3Ω

40 ns

10 ns
12
25

=150°C. Ratings are based on low frequency and duty cycles to keep

and case to ambient.

θJC

15 18 ns

31 37

nC

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 1: November 2010 www.aosmd.com Page 2 of 7

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25°C

125°C

125°C

25°C

125°C

5V

AON6716

150

120

90

(A)

D

I

60

30

0

0 1 2 3 4 5

Fig 1: On-Region Characteristics (Note E)

6

5

)

4

Ω

Ω

Ω

Ω

(m

3

DS(ON)

R

2

1

0

0 5 10 15 20 25 30

Figure 3: On-Resistance vs. Drain Current and Gate

4V

4.5V

10V

VGS=3V

VDS (Volts)

VGS=4.5V

VGS=10V

ID (A)

Voltage (Note E)

3.5V

150

120

90

(A)

D

I

60

30

0

0 1 2 3 4 5 6

1.8

1.6

1.4

1.2

1

Normalized On-Resistance

0.8
0 25 50 75 100 125 150 175

Figure 4: On-Resistance vs. Junction Temperature

VDS=5V

25°C

VGS(Volts)

Figure 2: Transfer Characteristics (Note E)

VGS=10V
ID=20A

VGS=4.5V
ID=20A

Temperature (°C)

(Note E)

17

5
2

10

0

18

8

7

6

)

Ω

Ω

Ω

Ω

5

(m

4

DS(ON)

R

3

2

1

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS (Volts)

(Note E)

ID=20A

1.0E+02

40

1.0E+01

(A)

1.0E+00

S

I

1.0E-01

1.0E-02

0.0 0.2 0.4 0.6 0.8 1.0

Figure 6: Body-Diode Characteristics

VSD (Volts)

(Note E)

Rev 1: November 2010 www.aosmd.com Page 3 of 7