ALPHA & OMEGA SEMICONDUCTOR AON6428L Datasheet

30V N-Channel MOSFET

V

Ω

A

C

C

A

General Description Product Summary

AON6428L

The AON6428L uses advanced trench technology to
provide excellent R

, low gate charge.This device is

DS(ON)

suitable for use as a high side switch in SMPS and general
purpose applications.

DS

ID (at VGS=10V)

R

R

(at VGS=10V)

DS(ON)

(at VGS= 4.5V)

DS(ON)

30V
24A

< 10mΩ

< 14.5m

100% UIS Tested
100% Rg Tested

Top View

1

2

3

4

8

7

6

5

G

DFN5X6

Absolute Maximum Ratings T

Drain-Source Voltage 30

Continuous Drain

Current

G

Pulsed Drain Current

Continuous Drain
Current

TC=25°C

T

C

C

T

A

T

A

Avalanche Current

Repetitive avalanche energy L=0.1mH

T

C

Power Dissipation

Power Dissipation

B

C

T

A

A

T

A

Junction and Storage Temperature Range -55 to 150 °C

=25°C unless otherwise noted

A

=100°C

=25°C

=70°C

=25°C

=100°C

=25°C

=70°C

Symbol

V

DS

V

GS

I

D

I

DM

I

DSM

I

AR

E

AR

P

D

P

DSM

TJ, T

STG

Maximum UnitsParameter

24
19
80
11

8

20
25
10T

2

1.3

D

S

mJ

W

W

V
V±20Gate-Source Voltage

A

A
A20

Thermal Characteristics

Parameter Typ Max

Maximum Junction-to-Ambient

Maximum Junction-to-Case

D

t ≤ 10s

Steady-State

Steady-State

Symbol

R

θJA

R

θJC

21
50

3.5

25
60

5

Units

°C/W
°C/WMaximum Junction-to-Ambient
°C/W

Rev 1: April 2009 www.aosmd.com Page 1 of 6

Ω

A

AON6428L

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage
Maximum Body-Diode Continuous Current

=250µA, VGS=0V

I

D

=30V, VGS=0V

V

DS

=0V, VGS= ±20V

V

DS

V

DS=VGS ID

V

GS

V

GS

V

GS

V

DS

=1A,VGS=0V

I

S

=250µA

=10V, VDS=5V

=10V, ID=20A

=4.5V, ID=20A

=5V, ID=20A

T

J

=125°C

T

J

=55°C

30 V

1

5

µA

±100 nA

1.2 1.7 2.2 V

80 A

8.3 10

12.4 15

11.3 14.5

mΩ

m

43 S

0.7 1 V

25 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

=0V, VDS=15V, f=1MHz

V

GS

=0V, VDS=0V, f=1MHz

GS

620 770 920 pF

170 240 310 pF

45 77 110 pF

0.4 0.8 1.4 Ω

SWITCHING PARAMETERS

(10V)

Q

g

(4.5V)

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

. The value of R

Power dissipation P
the user's specific board design.
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
T

=25°C.

J

D. The R

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.

H. These tests are performed with the device mounted on 1 in

Total Gate Charge

Total Gate Charge

Gate Source Charge

V

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

V
R

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

is based on R

DSM

is based on T

D

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends on

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

J(MAX)

I

I

2

FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

11.8 14.8 17.8 nC

=10V, VDS=15V, ID=20A

GS

5.7 7.1 8.5 nC

1.7 2.2 2.6 nC

1.8 3.1 4.3 nC

5ns

=10V, VDS=15V, RL=0.75Ω,

GS

=3Ω

GEN

3ns

18 ns

3ns

=20A, dI/dt=500A/µs

F

=20A, dI/dt=500A/µs

F

=150°C. Ratings are based on low frequency and duty cycles to keep initial

J(MAX)

and case to ambient.

θJC

911

18 23

13 ns

28

nC

Rev 1: April 2009

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 1: April 2009 www.aosmd.com Page 2 of 6