Alpha & Omega Semiconductor AOL1440 Service Manual

Symbol

V

DS

V

GS

I

DM

I

AR

E

AR

TJ, T

STG

Symbol Typ Max

19 25
45 55

R

θJC

1.5 2

mJ

W

37

°C

75

W

135

Drain-Source Voltage

V±30

30 A

85

66

A

I

D

200

Continuous Drain

Current

B,G,

Maximum UnitsParameter

T

C

=25°C

G

TC=100°C

B

25

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

V

P

D

Avalanche Current

C

TC=100°C

Junction and Storage Temperature Range

Repetitive avalanche energy L=0.3mH

C

Maximum Junction-to-Case

C

Steady-State

°C/W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient

A

t ≤ 10s

R

θJA

°C/W

Pulsed Drain Current

Gate-Source Voltage

Power Dissipation

A

TA=25°C

Power Dissipation

B

TC=25°C

Continuous Drain

Current

G

TA=25°C

Maximum Junction-to-Ambient

A

Steady-State

°C/W

P

DSM

5

T

A

=70°C 3

-55 to 175

I

DSM

25

A

T

A

=70°C 20

AOL1440
N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 25V
I

D

= 75A (VGS = 10V)

R

DS(ON)

< 3.2mΩ (VGS = 20V)

R

DS(ON)

< 4.0mW (VGS = 10V)

R

DS(ON)

< 5.2mW (VGS = 12V)

UIS Tested

Rg,Ciss,Coss,Crss Tested

General Description

The AOL1440 uses advanced trench technology to
provide excellent R

DS(ON)

, shoot-through immunity

and body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core

power conversion. Standard Product AOL1440 is

Pb-free (meets ROHS & Sony 259 specifications).
AOL1440L is a Green Product ordering option.
AOL1440 and AOL1440L are electrically identical.

G

D

S

UltraSO-8

TM

Top View

Bottom tab
connected to
drai

n

Fits SOIC8
footprint !

S

G

D

Features

VDS (V) = 25V
I

D

= 75A (VGS = 10V)

R

DS(ON)

< 3.2mΩ (VGS = 20V)

R

DS(ON)

< 4.0mΩ (VGS = 12V)

R

DS(ON)

< 5.2mΩ (VGS = 10V)

UIS Tested

Rg,Ciss,Coss,Crss Tested

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

查询AOL1440L供应商

AOL1440

Symbol Min Typ Max Units

BV

DSS

25 V

0.005 1

T

J

=55°C

5

I

GSS

100 nA

V

GS(th)

234V

I

D(ON)

200 A

2.7 3.2

3.5 4

4 5.2

m

Ω

TJ=125°C

5.6

m

Ω

g

FS

75 S

V

SD

0.7 1 V

I

S

55 A

C

iss

2100 2400 pF

C

oss

850 pF

C

rss

400 pF

R

g

0.35 1 Ω

Q

g

(12V)

40 50 nC

Q

g

(10V)

33 nC

Q

gs

11 nC

Q

gd

14 nC

t

D(on)

12 ns

t

r

19 ns

t

D(off)

15 ns

t

f

8.5 ns

t

rr

42

ns

Q

rr

34 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Gate Drain Charge

V

GS

=0V, VDS=12.5V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance V

GS

=0V, VDS=0V, f=1MHz

Total Gate Charge

V

GS

=10V, VDS=12.5V, ID=20A

Turn-On Rise Time

Turn-Off DelayTime

V

GS

=10V, VDS=12.5V, RL=0.68Ω,

R

GEN

=3Ω

Turn-Off Fall Time

Turn-On DelayTime

mΩ

I

S

=1A,VGS=0V

V

DS

=5V, ID=20A

V

GS

=10V, ID=20A

V

GS

=12V, ID=20A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

Forward Transconductance

Diode Forward Voltage

R

DS(ON)

Static Drain-Source On-Resistance

I

DSS

µA

Gate Threshold Voltage V

DS=VGS ID

=250µA

V

DS

=20V, VGS=0V

V

DS

=0V, VGS= ±30V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I

F

=20A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

I

D

=250µA, VGS=0V

V

GS

=12V, VDS=5V

V

GS

=20V, ID=20A

Reverse Transfer Capacitance

I

F

=20A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.

Rev0. July 2006

Alpha & Omega Semiconductor, Ltd. www.aosmd.com