Alpha & Omega Semiconductor AOL1434 Service Manual

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AOL1434
N-Channel Enhancement Mode Field Effect Transistor

General Description

The AOL1434 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
product AOL1434 is Pb-free (meets ROHS & Sony
259 specifications). AOL1434L is a Green Product
ordering option. AOL1434 and AOL1434L are
electrically identical.

UltraSO-8

TM

Top View

D

Bottom tab
connected to

S

drain

G

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

B

=25°C

T

C

T

=100°C

C

B

Pulsed Drain Current

Continuous Drain

Current

H

Avalanche Current

TA=25°C

=70°C 11

T

A

C

Repetitive avalanche energy L=0.3mH

TC=25°C

Power Dissipation

B

T

=100°C

C

TA=25°C

Power Dissipation

A

=70°C 1

T

A

Junction and Storage Temperature Range

Fits SOIC8
footprint !

Symbol

V

V

I

D

I

DM

I

DSM

I

C

AR

E

P

P

TJ, T

DS

GS

AR

D

DSM

STG

Features

VDS (V) = 25V

= 50A (VGS = 10V)

I

D

R
R

<6.3 mΩ (VGS = 10V)

DS(ON)

< 10 mΩ (VGS = 4.5V)

DS(ON)

G

Maximum UnitsParameter

25

50

34

150

14

30

135 mJ

38

13

2.1

-55 to 175

D

S

V

V20

A

A

A

W

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

C

t ≤ 10s
Steady-State
Steady-State

Symbol Typ Ma

R

θJA

R

θJC

18 25
49 60

2.5 4

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AOL1434

µ

Ω

n

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage V

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage
Maximum Body-Diode Continuous Current

I

=250µA, VGS=0V

D

=20V, VGS=0V

V

DS

V

=0V, VGS= ±20V

DS

DS=VGS ID

V

GS

V

GS

V

GS

V

DS

I

=1A,VGS=0V

S

=250µA

=10V, VDS=5V

=10V, ID=30A

=4.5V, ID=20A

=5V, ID=20A

T

J

=125°C

T

J

=55°C

25 V

1

5

µA

0.1

0.8 1.4 2.5 V

150 A

5.2 6.3

7.8 9.4

7.8 10

mΩ

m

49 S

0.74 1.0 V

50 A

A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

=0V, VDS=12.5V, f=1MHz

V

GS

=0V, VDS=0V, f=1MHz

GS

2050 2460 pF

485 pF

280 pF

0.86 1.5 Ω

SWITCHING PARAMETERS

(10V)

Q

g

Q

(4.5V)

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumi
a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.

Total Gate Charge

Total Gate Charge

Gate Source Charge

V

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

V
R

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device in a still air environment with T A =25°C.

θJA

is the sum of the thermal impedence from junction to case R

θJA

is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

D

IF=20A, dI/dt=100A/µs

I

F

=10V, VDS=12.5V, ID=20A

GS

=10V, VDS=12.5V,

GS

=0.68Ω, R

L

GEN

=3Ω

=20A, dI/dt=100A/µs

and case to ambient.

θJC

34 41 nC

17 22 nC

5nC

3.5 nC

7.5 ns

11 ns

27 ns

8ns

30

36 ns

19 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.