Alpha & Omega Semiconductor AOL1426 Service Manual

Symbol

V

DS

V

GS

I

DM

I

AR

E

AR

TJ, T

STG

Symbol Typ Ma

x

24 30
53 64

R

θJC

2.4 3.5

A

T

A

=70°C 8

Continuous Drain

Current

H

TA=25°C

I

DSM

10

A

Repetitive avalanche energy L=0.3mH

C

184 mJ

Maximum Junction-to-Case

C

Steady-State

°C/W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient

A

t ≤ 10s

R

θJA

°C/W
°C/W

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

V

V±12

Pulsed Drain Current

Power Dissipation

B

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Ambient

A

Steady-State

46

33

120

Avalanche Current

C

35

Power Dissipation

A

TA=25°C

P

DSM

Continuous Drain

Current

B

Maximum UnitsParameter

T

C

=25°C

T

C

=100°C

30

W

Junction and Storage Temperature Range

A

P

D

°C

43

21

-55 to 175

T

C

=100°C

I

D

2.0
W

T

A

=70°C 1

AOL1426
N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V
I

D

= 46A (VGS = 10V)

R

DS(ON)

<10.5mΩ (VGS = 10V)

R

DS(ON)

< 12.5mΩ (VGS = 4.5V)

General Description

The AOL1426 uses advanced trench technology to
provide excellent R

DS(ON)

, low gate charge.This device

is suitable for use as a high side switch in SMPS and

general purpose applications. Standard Product

A

OL1426 is Pb-free (meets ROHS & Sony 259
specifications). AOL1426L is a Green Product
ordering option. AOL1426 and AOL1426L are
electrically identical.

UltraSO-8

TM

Top View

Bottom tab
connected to
drain

Fits SOIC8
footprint !

S

G

D

D

S

G

Alpha & Omega Semiconductor, Ltd.

查询AOL1426L供应商

AOL1426

Symbol Min Typ Max Units

BV

DSS

30 V

1

T

J

=55°C

5

I

GSS

0.1

µ

A

V

GS(th)

1 1.55 2.5 V

I

D(ON)

120 A

8.5 10.5

T

J

=125°C

14.5 18

10.2 12.5

m

Ω

g

FS

40 S

V

SD

0.73 1.0 V

I

S

46 A

C

iss

1210 1452 pF

C

oss

330 pF

C

rss

85 pF

R

g

1.2 1.6 Ω

Q

g

(10V)

22 28 nC

Q

g

(4.5V)

10 nC

Q

gs

3.7 nC

Q

gd

2.7 nC

t

D(on)

10 ns

t

r

6.3 ns

t

D(off)

21 ns

t

f

2.8 ns

t

rr

36

45 ns

Q

rr

47 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I

F

=20A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

I

D

=250µA, VGS=0V

V

GS

=10V, VDS=5V

V

GS

=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=100A/µs

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

I

DSS

uA

Gate Threshold Voltage V

DS=VGS ID

=250µA

V

DS

=24V, VGS=0V

V

DS

=0V, VGS= ±12V

Zero Gate Voltage Drain Current

Gate-Body leakage current

R

DS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage
Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

mΩ

V

GS

=4.5V, ID=20A

I

S

=1A,VGS=0V

V

DS

=5V, ID=20A

Turn-On Rise Time

Turn-Off DelayTime

V

GS

=10V, VDS=15V, RL=0.75Ω,

R

GEN

=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Drain Charge

V

GS

=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance V

GS

=0V, VDS=0V, f=1MHz

Total Gate Charge

V

GS

=10V, VDS=15V, ID=20A

A: The value of R

θJA

is measured with the device in a still air environment with T A =25°C.

B. The power dissipation P

D

is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assumi

n

a maximum junction temperature of TJ(MAX)=175°C.
G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
SOA curve provides a single pulse rating.
H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.
Rev0: Mar 2006

Alpha & Omega Semiconductor, Ltd.