ALPHA & OMEGA SEMICONDUCTOR AOL1426 Datasheet

Symbol

Symbol

Typ

Max

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

AOL1426

V

drain

N-Channel Enhancement Mode Field Effect Transistor

General Description

The AOL1426 uses advanced trench technology to
provide excellent R

is suitable for use as a high side switch in SMPS and
general purpose applications.

-RoHS Compliant

-Halogen and Antimony Free Green Device*

Ultra SO-8

S

G

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain
Current

B

Pulsed Drain Current

Continuous Drain
Current

H

Avalanche Current

Repetitive avalanche energy L=0.3mH

Power Dissipation

Power Dissipation

Junction and Storage Temperature Range

DS(ON)

C

B

A

, low gate charge.This device

TM

Top View

D

Bottom tab
connected to

A

V

DS

V

GS

=25°C

T

C

T

=100°C

C

I

D

I

DM

TA=25°C

T

=70°C

A

TC=25°C

TC=100°C

TA=25°C

=70°C

T

A

I

DSM

I

C

AR

E

AR

P

D

P

DSM

TJ, T

STG

Features

(V) = 30V

DS

= 46A (VGS = 10V)

I

D

R

R

UIS Tested
Rg,Ciss,Coss,Crss Tested

< 10.5mΩ (VGS = 10V)

DS(ON)

< 13.5mΩ (VGS = 4.5V)

DS(ON)

G

Maximum UnitsParameter

30

46

33

120

10

8

30

135 mJ

43

21

2

1.2

-55 to 175

D

S

V

V±12

A

A

A

W

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

Alpha & Omega Semiconductor, Ltd.

t ≤ 10s

Steady-State

C

Steady-State

R

θJA

R

θJC

24 30
53 64

2.4 3.5

°C/W
°C/W
°C/W

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AOL1426

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

I

D

V

=30V, VGS=0V

DS

V

=0V, VGS= ±12V

DS

V

DS=VGS ID

=250µA

VGS=10V, VDS=5V

V

=10V, ID=20A

GS

V

=4.5V, ID=20A

GS

=5V, ID=20A

V

DS

=1A,VGS=0V

I

S

=55°C 5

T

J

=125°C 14.5 18

T

J

30 V

1

uA

0.1 µA

1 1.55 2.5 V

120 A

8.5 10.5
mΩ

10.2 13.5 mΩ

40 S

0.73 1.0 V

46 A

=250µA, VGS=0V

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

=0V, VDS=15V, f=1MHz

V

GS

=0V, VDS=0V, f=1MHz

V

GS

1210 1452 pF

330 pF

85 pF

1.2 1.6 Ω

SWITCHING PARAMETERS

(10V) 22 28 nC

Q

g

Q

(4.5V) 10 13 nC

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
B. The power dissipation P
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T

G. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.

H. Surface mounted on a 1 in 2 FR-4 board with 2oz. Copper.

* This device is guaranteed green after date code 8P11 (June 1

Rev5: Dec 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Total Gate Charge

Total Gate Charge

Gate Source Charge

VGS=10V, VDS=15V, ID=20A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

V
R

Turn-Off Fall Time

I

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device in a still air environment with T A =25°C.

θJA

is the sum of the thermal impedence from junction to case R

θJA

is based on T

D

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=175°C.

J(MAX)

F

I

F

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

ST

=10V, VDS=15V, RL=0.75Ω,

GS

=3Ω

GEN

=20A, dI/dt=100A/µs

=20A, dI/dt=100A/µs

=175°C.

J(MAX)

2008)

and case to ambient.

θJC

3.7 nC

2.7 nC

10 ns

6.3 ns

21 ns

2.8 ns

36

45 ns

47 nC

Alpha & Omega Semiconductor, Ltd. www.aosmd.com