Alpha & Omega Semiconductor AOL1424 Service Manual

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AOT424
N-Channel Enhancement Mode Field Effect Transistor

General Description

The AOT424 uses advanced trench technology to
provide excellent R

gate resistance. This device is ideally suited for use
as a low side switch in CPU core power conversion.
Standard Product AOT424 is Pb-free (meets ROHS
& Sony 259 specifications). AOT424L is a Green
Product ordering option. AOT424 and AOT424L are
electrically identical.

O-220

G D S

Absolute Maximum Ratings T

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

B,G

Pulsed Drain Current
Avalanche Current

Repetitive avalanche energy L=0.1mH

Power Dissipation

Junction and Storage Temperature Range

, low gate charge and low

DS(ON)

=25°C unless otherwise noted

A

G

=25°C

T

C

TC=100°C

C

B

TC=25°C

B

T

=100°C

C

Symbol

V

DS

V

GS

I

D

I

DM

I

C

AR

E

AR

P

D

TJ, T

STG

Features

VDS (V) = 30V

= 110A (VGS = 10V)

I

D

R

DS(ON)

R

< 5.5mΩ (VGS = 4.5V)

DS(ON)

D

G

S

< 4mΩ (VGS = 10V)

Maximum UnitsParameter

30

110

88

200

30

112 mJ

100

50

-55 to 175

V

V±20

A

A

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

C

t ≤ 10s
Steady-State
Steady-State

Symbol Typ Ma

R

θJA

R

θJC

14.2 20
39 50

0.8 1.5

°C/W
°C/W
°C/W

Alpha & Omega Semiconductor, Ltd.

AOT424

Electrical Characteristics (T

Symbol Min Typ Max Units

=25°C unless otherwise noted)

J

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage V
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

I

=250µA, VGS=0V

D

=24V, VGS=0V

V

DS

V

=0V, VGS= ±20V

DS
DS=VGS ID

V

GS

V

GS

V

GS

V

DS

I

=1A,VGS=0V

S

=250µA
=10V, VDS=5V
=10V, ID=30A

=4.5V, ID=30A
=5V, ID=30A

T

J

=125°C

T

J

=55°C

30 V

1
5

µA

100 nA

123V

110 A

34

4.7 6

4.3 5.5

mΩ

m

Ω

106 S

0.72 1 V
85 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V

V

=0V, VDS=15V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

3200 3840 pF

590 pF
414 pF

0.54 0.7 Ω

SWITCHING PARAMETERS

(10V)

Q

g

Q

(4.5V)

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A: The value of R
dissipation P
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB or heatsink allows it.
B. The power dissipation P
limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
G. The maximum current rating is limited by the package current capability.

Rev2: August 2005

Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is based on steady-state R

DSM

is based on T

D

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application

θJA

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

J(MAX)

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve

=10V, VDS=15V, ID=30A

V

GS

=10V, VDS=15V, RL=0.5Ω,

V

GS

R

=3Ω

GEN

IF=30A, dI/dt=100A/µs
I

=30A, dI/dt=100A/µs

F

=175°C.

J(MAX)

and case to ambient.

θJC

59.6 72 nC

30.4 37 nC

9.5 nC

19.8 nC

12.5 ns

35.5 ns

40 ns

32.5 ns

35.3 42

ns

30.7 nC

=25°C. The Power

A

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.