Alpha & Omega Semiconductor AOL1418 Service Manual

Symbol

V

DS

V

GS

I

DM

I

AR

E

AR

TJ, T

STG

Symbol Ty

p

Max

19.5 25
48 60

R

θJC

1 1.5

15

T

A

=70°C 12

A

Repetitive avalanche energy L=0.3mH

C

135 mJ

°C/W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient

A

t ≤ 10s

R

θJA

°C/W

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Case

C

Steady-State

Continuous Drain
Current

G

TA=25°C

I

DSM

TA=25°C

P

DSM

°C/W

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

V

V±20

Pulsed Drain Current

Power Dissipation

B

TC=25°C

A

I

D

Maximum Junction-to-Ambient

A

Steady-State

85

70

200

Avalanche Current

C

30

Power Dissipation

A

2.5
W

Continuous Drain
Current

B

Maximum UnitsParameter

T

C

=25°C

G

TC=100°C

30

T

A

=70°C 1.6

W

Junction and Storage Temperature Range

P

D

°C

100

50

-55 to 175

T

C

=100°C

AOL1418
N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V
ID = 85A (VGS = 10V)
R

DS(ON)

< 6.5mΩ (VGS = 10V)

R

DS(ON)

< 10.5mΩ (VGS = 4.5V)

General Description

The AOL1418 uses advanced trench technology to
provide excellent R

DS(ON)

, low gate chargeand low

gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.

Standard Product AOL1418 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1418L is a Green
Product ordering option. AOL1418 and AOL1418L
are electrically identical.

G

D

S

UltraSO-8

TM

Top View

Bottom tab
connected to
drain

Fits SOIC8
footprint !

S

G

D

Alpha & Omega Semiconductor, Ltd.

查询AOL1418L供应商

AOL1418

Symbol Min Typ Max Units

BV

DSS

30 V

0.005 1

T

J

=55°C

5

I

GSS

100 nA

V

GS(th)

1 2.2 3 V

I

D(ON)

100 A

5 6.5

T

J

=125°C

6.7 8.1

8.3 10.5

m

Ω

g

FS

60 S

V

SD

0.72 1 V

I

S

85 A

C

iss

1320 1600 pF

C

oss

533 pF

C

rss

154 pF

R

g

0.95 1.5 Ω

Q

g

(10V)

26 32 nC

Q

g

(4.5V)

13.3 16.2 nC

Q

gs

3.2 nC

Q

gd

6.6 nC

t

D(on)

7.2 10 ns

t

r

12.5 18 ns

t

D(off)

22 33 ns

t

f

69ns

t

rr

29.7 36

ns

Q

rr

29 36 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Gate Drain Charge

V

GS

=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

Gate Source Charge

Gate resistance V

GS

=0V, VDS=0V, f=1MHz

V

GS

=4.5V, VDS=15V, ID=20A

Total Gate Charge

Turn-On Rise Time

Turn-Off DelayTime

V

GS

=10V, VDS=15V, RL=0.75Ω,

R

GEN

=3Ω

Turn-Off Fall Time

Turn-On DelayTime

mΩ

V

GS

=4.5V, ID=20A

I

S

=1A,VGS=0V

V

DS

=5V, ID=20A

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

R

DS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I

DSS

μA

Gate Threshold Voltage V

DS=VGS ID

=250μA

V

DS

=24V, VGS=0V

V

DS

=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I

F

=20A, dI/dt=100A/μs

Drain-Source Breakdown Voltage

On state drain current

I

D

=250μA, VGS=0V

V

GS

=10V, VDS=5V

V

GS

=10V, ID=20A

Reverse Transfer Capacitance

I

F

=20A, dI/dt=100A/μs

A: The value of R

θJA

is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating.
Rev1: Dec 2005

Alpha & Omega Semiconductor, Ltd.