Alpha & Omega Semiconductor AOL1414 Service Manual

Symbol

V

DS

V

GS

I

DM

I

AR

E

AR

TJ, T

STG

Symbol Ty

p

Max

19.5 25
48 60

R

θJC

1 1.5

15

T

A

=70°C 12

A

Repetitive avalanche energy L=0.3mH

C

135 mJ

°C/W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient

A

t ≤ 10s

R

θJA

°C/W

Gate-Source Voltage

Drain-Source Voltage

Maximum Junction-to-Case

C

Steady-State

Continuous Drain
Current

G

TA=25°C

I

DSM

TA=25°C

P

DSM

°C/W

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

V

V±12

Pulsed Drain Current

Power Dissipation

B

TC=25°C

A

I

D

Maximum Junction-to-Ambient

A

Steady-State

85

70

200

Avalanche Current

C

30

Power Dissipation

A

2.5
W

Continuous Drain
Current

B

Maximum UnitsParameter

T

C

=25°C

T

C

=100°C

30

T

A

=70°C 1.6

W

Junction and Storage Temperature Range

P

D

°C

100

50

-55 to 175

T

C

=100°C

AOL1414
N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 30V
ID = 85A (VGS = 10V)
R

DS(ON)

< 6.5mΩ (VGS = 10V)

R

DS(ON)

< 7.5mΩ (VGS = 4.5V)

General Description

The AOL1414 uses advanced trench technology to
provide excellent R

DS(ON)

, low gate chargeand low

gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.

Standard Product AOL1414 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1414L is a Green
Product ordering option. AOL1414 and AOL1414L
are electrically identical.

G

D

S

UltraSO-8

TM

Top View

Bottom tab
connected to
drain

Fits SOIC8
footprint !

S

G

D

Alpha & Omega Semiconductor, Ltd.

查询AOL1414L供应商

AOL1414

Symbol Min Typ Max Units

BV

DSS

30 V

0.002 1

T

J

=55°C 5

I

GSS

100 nA

V

GS(th)

1 1.5 2 V

I

D(ON)

100 A

4.9 6.5

T

J

=125°C 6.9 8.3

6 7.5

mΩ

g

FS

90 S

V

SD

0.74 1 V

I

S

85 A

C

iss

2100 2520 pF

C

oss

536 pF

C

rss

165 pF

R

g

0.95 1.5 Ω

Q

g

(4.5V) 19.7 24 nC

Q

gs

3.6 nC

Q

gd

7.9 nC

t

D(on)

5.9 10 ns

t

r

11 17 ns

t

D(off)

36.2 55 ns

t

f

12 18 ns

t

rr

35 42

ns

Q

rr

33 50 nC

Continuous Drain Cu

r

TC=25°C
T

C

=100°C

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Gate Drain Charge

V

GS

=0V, VDS=15V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge
Gate Source Charge

Gate resistance V

GS

=0V, VDS=0V, f=1MHz

V

GS

=4.5V, VDS=15V, ID=20A

Turn-On Rise Time
Turn-Off DelayTime

V

GS

=10V, VDS=15V, RL=0.75Ω,

R

GEN

=3Ω

Turn-Off Fall Time

Turn-On DelayTime

mΩ

V

GS

=4.5V, ID=20A

I

S

=1A,VGS=0V

V

DS

=5V, ID=20A

Maximum Body-Diode Continuous Current

Input Capacitance
Output Capacitance

DYNAMIC PARAMETERS

R

DS(ON)

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage

I

DSS

μA

Gate Threshold Voltage V

DS=VGS ID

=250μA

V

DS

=24V, VGS=0V

V

DS

=0V, VGS= ±12V

Zero Gate Voltage Drain Current
Gate-Body leakage current

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

I

F

=20A, dI/dt=100A/μs

Drain-Source Breakdown Voltage

On state drain current

I

D

=250μA, VGS=0V

V

GS

=10V, VDS=5V

V

GS

=10V, ID=20A

Reverse Transfer Capacitance

I

F

=20A, dI/dt=100A/μs

A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the

j

unction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: Dec. 2005

Alpha & Omega Semiconductor, Ltd.