ALPHA & OMEGA SEMICONDUCTOR AOL1412 Datasheet

General Description Product Summary

V

Symbol

A D

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

SRFET

TM

AOL1412

30V N-Channel MOSFET

SRFETTM AOL1412 uses advanced trench technology
with a monolithically integrated Schottky diode to provide
excellent R

,and low gate charge. This device is

DS(ON)

suitable for use as a low side FET in SMPS, load
switching and general purpose applications.

DS

ID (at VGS=10V) 70A
R
R

(at VGS=10V) < 3.8mΩ

DS(ON)

(at VGS = 4.5V) < 4.5mΩ

DS(ON)

30V

100% UIS Tested
100% Rg Tested

TM

Top View Bottom View

UltraSO-8

G

S

D

G

A

S

G

D

SRFET
Soft Recovery MOSFET:

Integrated Schottky Diode

S

TM

Maximum UnitsParameter

Drain-Source Voltage 30

Continuous Drain
Current

Continuous Drain
Current

Avalanche Current
Avalanche energy L=0.1mH

TC=25°C
TC=100°C

C

TA=25°C
TA=70°C

C

C

TC=25°C

B

Power Dissipation

TC=100°C
TA=25°C

A

Power Dissipation

TA=70°C

Junction and Storage Temperature Range -55 to 150 °C

V

DS

V

GS

I

D

I

DM

I

DSM

IAS, I
EAS, E

P

D

P

DSM

TJ, T

AR

STG

70
44

170Pulsed Drain Current

17
14

AR

45

mJ
36
14

2.1

1.3

V
V±12Gate-Source Voltage

A

A
A30

W

W

Thermal Characteristics
Parameter Typ Max

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case

Rev8 : Aug 2011 www.aosmd.com Page 1 of 7

t ≤ 10s
Steady-State
Steady-State

Symbol

R

θJA

R

θJC

20
50

2.5

25
60

3.5

Units

°C/W
°C/W
°C/W

Electrical Characteristics (TJ=25°C unless otherwise noted)

AOL1412

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV
I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

DSS

Zero Gate Voltage Drain Current
Gate-Body leakage current

Gate Threshold Voltage
On state drain current

Static Drain-Source On-Resistance

Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current

ID=10mA, VGS=0V

30 V

VDS=30V, VGS=0V 0.5

TJ=125°C 100
VDS=0V, VGS= ±12V
VDS=V

GS ID

=250µA
VGS=10V, VDS=5V
VGS=10V, ID=20A

1.2 1.6 2.1 V

170 A

2.9 3.8

100 nA

TJ=125°C 4.8 5.8
VGS=4.5V, ID=20A
VDS=5V, ID=20A
IS=1A,VGS=0V

3.5 4.5 mΩ

150 S

0.4 0.7 V
40 A

mA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance

VGS=0V, VDS=15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

2500 3160 3800 pF

240 350 460 pF
150 260 370 pF

0.4 0.8 1.2 Ω

SWITCHING PARAMETERS

Qg(4.5V) 21 27 33 nC
Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.

B. The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
initial TJ =25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Total Gate Charge
Gate Source Charge

VGS=10V, VDS=15V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime

VGS=10V, VDS=15V, RL=0.75Ω,

R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

θJA

is based on R

DSM

is the sum of the thermal impedence from junction to case R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application depends

θJA

=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=150°C. The SOA curve provides a single pulse ratin g.

J(MAX)

IF=20A, dI/dt=500A/µs

IF=20A, dI/dt=500A/µs

8 nC
9 nC

10 ns

3 ns

GEN

=3Ω

50 ns

6 ns

8

10 12 ns

11

=150°C. Ratings are based on low frequency and duty cycles to keep

J(MAX)

and case to ambient.

θJC

14 17

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 8 : Aug 2011 www.aosmd.com Page 2 of 7

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

125°C

125°C

25°C

AOL1412

100

80

60

(A)

D

I

40

20

0

0 1 2 3 4 5

6

5

)

Ω

Ω

Ω

Ω

(m

4

DS(ON)

R

3

2

0 5 10 15 20 25 30

4.5V

10V

VGS=2.5V

Fig 1: On-Region Characteristics (Note E)

Figure 3: On-Resistance vs. Drain Current and

VDS (Volts)

VGS=4.5V

VGS=10V

ID (A)

Gate Voltage (Note E)

50

VDS=5V

40

30

(A)

D

I

20

10

0

1 1.5 2 2.5 3

Figure 2: Transfer Characteristics (Note E)

2.2
2

1.8

1.6

1.4

1.2

Normalized On-Resistance

1

0.8

0 25 50 75 100 125 150 175 200

Figure 4: On-Resistance vs. Junction Temperature

VGS(Volts)

VGS=4.5V
ID=20A

VGS=10V
ID=20A

Temperature (°C)

(Note E)

25°C

10

8

)

6

Ω

Ω

Ω

Ω

(m

4

DS(ON)

R

2

0

2 4 6 8 10

Figure 5: On-Resistance vs. Gate-Source Voltage

VGS (Volts)

(Note E)

125°C

ID=20A

1.0E+02

1.0E+01

1.0E+00

1.0E-01

(A)

S

I

1.0E-02

1.0E-03

1.0E-04

1.0E-05

40

25°C

0.0 0.2 0.4 0.6 0.8 1.0

VSD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

Rev 8 : Aug 2011 www.aosmd.com Page 3 of 7