Alpha & Omega Semiconductor AOL1400 Service Manual
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AOL1400
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1400 uses advanced trench technology to
provide excellent R
good body diode characteristics. This device is ideally
suited for use as a low side switch in CPU core power
conversion. Standard product AOL1400 is Pb-free
, shoot-through immunity and
DS(ON)
Features
VDS (V) = 30V
ID = 85A (VGS = 10V)
R
< 4.5mΩ (VGS = 10V)
DS(ON)
R
< 5.5mΩ (VGS = 4.5V)
DS(ON)
(meets ROHS & Sony 259 specifications). AOL1400L
is a Green Product ordering option. AOL1400 and
OL1400L are electrically identical.
UltraSO-8
S
TM
Top View
D
Fits SOIC8
footprint !
Bottom tab
connected to
drain
D
G
S
G
Absolute Maximum Ratings T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
B
T
=25°C
C
TC=100°C
Pulsed Drain Current
Continuous Drain
Current
G
Avalanche Current
TA=25°C
=70°C 13
T
A
C
Repetitive avalanche energy L=0.3mH
=25°C
T
C
Power Dissipation
Power Dissipation
B
=100°C
T
C
=25°C
T
A
A
T
=70°C 1.3
A
Junction and Storage Temperature Range -55 to 175
=25°C unless otherwise noted
A
Symbol
V
DS
V
G
B
C
GS
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
TJ, T
STG
Maximum UnitsParameter
30
85
70
200
17
30
145
100
50
2.1
V
V±12
A
A
mJ
W
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
C
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJC
Max
21 25
48 60
1 1.5
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AOL1400
Ω
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=250μA, VGS=0V
D
=24V, VGS=0V
V
DS
=0V, VGS= ±12V
V
DS
DS=VGS ID
=4.5V, VDS=5V
V
GS
V
=10V, ID=20A
GS
=4.5V, ID=20A
V
GS
=5V, ID=20A
V
DS
=1A,VGS=0V
I
S
=250μA
T
=55°C
J
T
=125°C
J
30 V
0.005 1
5
μA
100 nA
0.6 1.1 1.8 V
100 A
3.9 4.5
56
4.6 5.5
mΩ
m
102 S
0.64 1 V
85 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
=0V, VDS=15V, f=1MHz
Output Capacitance
V
GS
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
9130 10500 pF
625 pF
387 pF
0.4 0.8 Ω
SWITCHING PARAMETERS
Q
(4.5V)
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
dissipation P
specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T
Rev 1: Dec 2005
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is based on R
DSM
is the sum of the thermal impedence from junction to case R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's
θJA
is based on T
D
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
J(MAX)
=175°C.
=4.5V, VDS=15V, ID=20A
V
GS
V
=10V, VDS=15V, RL=0.75Ω,
GS
=3Ω
R
GEN
I
=20A, dI/dt=100A/μs
F
I
=20A, dI/dt=100A/μs
F
=175°C.
J(MAX)
and case to ambient.
θJC
62
72.4 85 nC
13.4 nC
16.8 nC
14.7 22 ns
14.2 21 ns
105.5 150 ns
23.5 35 ns
30.5 40
ns
21 33 nC
=25°C. The Power
A
=25°C.
A
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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