Alpha & Omega Semiconductor AOD425 Service Manual

Symbol

A

Absolute Maximum Ratings T

=25°C unless otherwise noted

C

A

T

AOD425

with a 25V gate rating. This device is suitable for use as a

P-Channel Enhancement Mode Field Effect Transistor

General Description

The AOD425 uses advanced trench technology to
provide excellent R

load switch or in PWM applications. The device is ESD
protected.

-RoHS Compliant

-Halogen Free*

Top View

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain
Current

F

Pulsed Drain Current

Continuous Drain
Current

Power Dissipation

Power Dissipation

Junction and Storage Temperature Range

and ultra-low low gate charge

DS(ON)

TO-252
D-PAK

D

G

Bottom View

S

A

TC=25°C

TC=100°C

=25°C

A

T

=70°C

A

TC=25°C

B

TC=100°C

TA=25°C

A

TA=70°C

S

V

DS

V

GS

I

D

I

DM

I

DSM

P

D

P

DSM

TJ, T

G

STG

Features

VDS (V) = -30V
ID = -20A (VGS = -10V)
R

< 17mΩ (V

DS(ON)

R

< 35mΩ (V

DS(ON)

ESD Protected!
100% Rg Tested!

Maximum UnitsParameter

-30

-40

-30

-70

50

25

2.3

1.5

-55 to 175

= -10V)

GS

= -5V)

GS

D

G

S

-9

-7

V

V±25

A

A

W

W

°C

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient

Maximum Junction-to-Case

B

Steady-State
Steady-State

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

t ≤ 10s

Symbol Typ Max

R

θJA

R

θJC

18 22
44 55

2.4 3

°C/W
°C/W
°C/W

AOD425

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

g

FS

V

SD

I

S

DSS

DS(ON)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

ID=-250uA, VGS=0V

VDS=-30V, VGS=0V

VDS=0V, VGS= ±25V

VDS=V

GS ID

=-250µA

VGS=-10V, VDS=-5V

VGS=-10V, ID=-20A

VGS=-5V, ID=-20A

VDS=-5V, ID=-20A

IS=-1A,VGS=0V

-30 V

-1

TJ=55°C -5

±10 uA

-1.5 -2.45 -3.5 V

-70 A

13.5 17

TJ=125°C 18.5 24

27 35

27 S

-0.72 -1 V

-40 A

µA

mΩ

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

VGS=0V, VDS=-15V, f=1MHz

VGS=0V, VDS=0V, f=1MHz

1760 2200 pF

360 pF

255 pF

6.4 8 Ω

SWITCHING PARAMETERS

Qg(10V) 30 38 nC

Qg(4.5V) 11 nC

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

A. The value of R
Power dissipation P
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on T
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep. 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Total Gate Charge

Total Gate Charge

Gate Source Charge

VGS=-10V, VDS=-15V, ID=-20A

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V,
R

L

Turn-Off Fall Time

I

=-20A, dI/dt=100A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

θJA

is based on t<10s R

DSM

is the sum of the thermal impedence from junction to case R

θ

JA

and the maximum allowed junction temperature of 150°C. The value in any given application

θJA

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

J(MAX)

=175°C. The SOA curve provides a single pulse rating.

J(MAX)

F

I

=-20A, dI/dt=100A/µs

F

J(MAX)

=0.75Ω, R

=175°C.

and case to ambient.

θ

JC

GEN

=3Ω

7 nC

8 nC

11.5 ns

8 ns

35 ns

18.5 ns

24

30 ns

16 nC

Alpha & Omega Semiconductor, Ltd. www.aosmd.com