Alpha & Omega Semiconductor AOD409 Service Manual

Symbol

V

DS

V

GS

I

DM

I

AR

E

AR

TJ, T

STG

Symbol Typ Max

16.7 25
40 50

R

θJC

1.9 2.5

°C

V

V±20

30

A

-26

134

60

Gate-Source Voltage

Drain-Source Voltage -60

Pulsed Drain Current

C

-26

-18

-60

Avalanche Current

C

Continuous Drain
Current

G

Maximum UnitsParameter

T

C

=25°C

T

C

=100°C

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

I

D

P

DSM

2.5

A

Repetitive avalanche energy L=0.1mH

C

mJ

Power Dissipation

B

TC=25°C

P

D

W

T

C

=100°C

Maximum Junction-to-Ambient

A

Steady-State

°C/W

W

T

A

=70°C 1.6

Junction and Storage Temperature Range -55 to 175

Power Dissipation

A

TA=25°C

Maximum Junction-to-Case

C

Steady-State

°C/W

Thermal Characteristics
Parameter Units

Maximum Junction-to-Ambient

A

t ≤ 10s

R

θJA

°C/W

AOD409
P-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = -60V
I

D

= -26A (VGS = -10V)

R

DS(ON)

< 40mΩ (VGS = -10V) @ -20A

R

DS(ON)

< 55mΩ (VGS = -4.5V)

General Description

The AOD409 uses advanced trench technology to
provide excellent R

DS(ON)

, low gate charge and low

gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for

high current load applications. Standard Product

A

OD409 is Pb-free (meets ROHS & Sony 259
specifications). AOD409L is a Green Product
ordering option. AOD409 and AOD409L are
electrically identical.

G D S

T

O-252

D-PAK

T

op View

Drain Connected to

T

ab

G

D

S

Alpha & Omega Semiconductor, Ltd.

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AOD409

Symbol Min Typ Max Units

BV

DSS

-60 V

-0.003 -1

T

J

=55°C

-5

I

GSS

±100 nA

V

GS(th)

-1.2 -1.9 -2.4 V

I

D(ON)

-60 A

32 40

T

J

=125°C

53

43 55

m

Ω

g

FS

32 S

V

SD

-0.73 -1 V

I

S

-30 A

C

iss

2977 3600 pF

C

oss

241 pF

C

rss

153 pF

R

g

2 2.4 Ω

Q

g

(10V)

44 54 nC

Q

g

(4.5V)

22.2 28 nC

Q

gs

9nC

Q

gd

10 nC

t

D(on)

12 ns

t

r

14.5 ns

t

D(off)

38 ns

t

f

15 ns

t

rr

40

50 ns

Q

rr

59 nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

V

GS

=0V, VDS=-30V, f=1MHz

Gate Drain Charge

Total Gate Charge (10V)

V

GS

=-10V, VDS=-30V, ID=-20A

Turn-On Rise Time

Turn-Off DelayTime

V

GS

=-10V, VDS=-30V, RL=1.5Ω,

R

GEN

=3Ω

Gate resistance V

GS

=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

SWITCHING PARAMETERS

Total Gate Charge (4.5V)

Gate Source Charge

mΩ

V

GS

=-4.5V, ID=-20A

I

S

=-1A,VGS=0V

V

DS

=-5V, ID=-20A

R

DS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I

DSS

µA

Gate Threshold Voltage V

DS=VGS ID

=-250µA

V

DS

=-48V, VGS=0V

V

DS

=0V, VGS=±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Electrical Characteristics (T

J

=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter Conditions

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I

F

=-20A, dI/dt=100A/µs

Drain-Source Breakdown Voltage

On state drain current

I

D

=-250µA, VGS=0V

V

GS

=-10V, VDS=-5V

V

GS

=-10V, ID=-20A

Reverse Transfer Capacitance

I

F

=-20A, dI/dt=100A/µs

A: The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation PDSM is based on R qJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 3: June 2005

Alpha & Omega Semiconductor, Ltd.