ALPHA & OMEGA SEMICONDUCTOR AO4932 Datasheet
Asymmetric Dual N-Channel MOSFET
SRFET
TM
A D
A
Absolute Maximum Ratings T
=25°C unless otherwise noted
G1
S2/D1
S2
S1
General Description Product Summary
AO4932
The AO4932 uses advanced trench technology to provide
excellent R
and low gate charge. The two MOSFETs
DS(ON)
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
SOIC-8
Top View Bottom View
Top View
D2
D2
S1
FET1(N-Channel) FET2(N-Channel)
VDS= 30V 30V
ID= 11A (VGS=10V) 8A (VGS=10V)
R
DS(ON)
R
DS(ON)
< 12.5mΩ (VGS=10V) < 19mΩ (VGS=10V)
< 15mΩ (VGS=4.5V) < 23mΩ (VGS=4.5V)
100% UIS Tested 100% UIS Tested
100% Rg Tested 100% Rg Tested
TM
SRFET
Soft Recovery MOSFET:
Integrated Schottky Diode
G2
S2/D1
S2/D1
G1
G2
D2 D1
Pin1
A
Symbol
Drain-Source Voltage 30
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
TA=25°C
TA=70°C
C
C
C
TA=25°C
B
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
IAS, I
EAS, E
P
D
TJ, T
AR
AR
STG
Max FE1
11
60
15
11
1.3
Thermal Characteristics
Parameter Typ Max Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
48
74 90
32 40
9
2
-55 to 150
Max FET2
30
±20
8
6.5
40
19
18
2
1.3
62.5 °C/W
UnitsParameter
V
V±12
A
A
mJAvalanche energy L=0.1mH
W
°C
°C/W
°C/W
www.aosmd.com Page 1 of 9
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)
AO4932
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
ID=1mA, VGS=0V
30 V
VDS=30V, VGS=0V 0.5
TJ=125°C 500
VDS=0V, VGS= ±12V
VDS=V
GS ID
=250µA
VGS=10V, VDS=5V
VGS=10V, ID=11A
1.1 1.65 2.1 V
60 A
100 nA
10 12.5
TJ=125°C 15 18
VGS=4.5V, ID=9A
VDS=5V, ID=11A
IS=1A,VGS=0V
12 15 mΩ
75 S
0.4 0.7 V
4 A
mA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
930 1170 1400 pF
90 128 170 pF
45 89 125 pF
0.7 1.4 2.1 Ω
SWITCHING PARAMETERS
Qg(10V) 16 20 24 nC
Qg(4.5V) 7 8.7 10.5 nC
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of T
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
θJA
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
is the sum of the thermal impedence from junction to lead R
θJA
=150°C. The SOA curve provides a single pulse rating.
J(MAX)
VGS=10V, VDS=15V, ID=11A
3.2 nC
3 nC
6 nsTurn-On DelayTime
VGS=10V, VDS=15V, RL=1.4Ω,
R
=3Ω
GEN
2.4 ns
23 ns
4 ns
IF=11A, dI/dt=500A/µs
IF=11A, dI/dt=500A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and lead to ambient.
θJL
5.5
5
7 8.5 ns
6.5 8
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: Nov. 2011 www.aosmd.com Page 2 of 9
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Figure 4: On
-
Resistance vs. Junction Temperature
125°C
10V
4.5V
3V
18
Voltage (Note E)
Figure 4: On
-
Resistance vs. Junction Temperature
AO4932
35
30
25
20
(A)
D
I
15
10
5
0
0 1 2 3 4 5
Fig 1: On-Region Characteristics (Note E)
14
12
Ω
Ω)
Ω
Ω
(m
10
DS(ON)
R
8
6
5 10 15 20 25 30
Figure 3: On-Resistance vs. Drain Current and Gate
VDS(Volts)
VGS=4.5V
VGS=10V
ID(A)
2.75V
2.5V
V
=2.25V
35
VDS=5V
30
25
20
(A)
D
I
15
10
5
0
1.5 1.8 2.1 2.4 2.7 3
Figure 2: Transfer Characteristics (Note E)
1.8
1.6
1.4
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
VGS(Volts)
VGS=10V
ID=11A
Temperature (°C)
(Note E)
25°C
VGS=4.5V
ID=9A
17
5
2
10
0
25
20
Ω
Ω)
Ω
Ω
(m
15
DS(ON)
R
10
25°C
5
2 4 6 8 10
Figure 5: On-Resistance vs. Gate-Source Voltage
VGS(Volts)
(Note E)
125°C
ID=11A
1.0E+02
1.0E+01
1.0E+00
1.0E-01
(A)
S
I
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
40
0.0 0.2 0.4 0.6 0.8 1.0
Figure 6: Body-Diode Characteristics (Note E)
VSD(Volts)
Rev 4: Nov. 2011 www.aosmd.com Page 3 of 9
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