Alpha & Omega Semiconductor AO4916, AO4916L Service Manual
A
/S2/K
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AO4916, AO4916L( Green Product )
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Rev 3: Nov 2004
General Description
Features
VDS (V) = 30V
The AO4916 uses advanced trench technology to
provide excellent R
and low gate charge. The
DS(ON)
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. AO4916L
= 8.5A
I
D
R
R
< 17mΩ (VGS = 10V)
DS(ON)
< 27mΩ (VGS = 4.5V)
DS(ON)
SCHOTTKY
(V) = 30V, IF = 3A, VF=0.5V@1A
V
DS
( Green Product ) is offered in a lead-free package.
D1
S1
K
A
G2
8.5
6.6
40
22
1.28 1.28
1
D2
D2
G1
S1/
8
7
6
5
G2
D1/S2/K
D1
D1/S2/K
G1
2
3
4
SOIC-8
Absolute Maximum Ratings T
Parameter MOSFET Schottky
Drain-Source Voltage 30
Gate-Source Voltage ±20
Continuous Drain Current
Pulsed Drain Current
B
Schottky reverse voltage 30
Continuous Forward Current
Pulsed Forward Current
B
Power Dissipation
Junction and Storage Temperature Range -55 to 150 -55 to 150
=25°C unless otherwise noted
A
=25°C
T
A
A
A
T
A
T
A
T
A
=70°C
=25°C
=70°C
TA=25°C
=70°C
T
A
Symbol Units
V
DS V
V
GS V
I
D
I
DM
V
KA V
I
F
I
FM
P
D
, T
T
J
STG °C
D2
S2
3
2
40
A
A
W
Parameter: Thermal Characteristics MOSFET Typ Max
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Units
R
θJA
48
62.5
74 110
R
θJL
35 40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
47.5 62.5
71
110
32 40
Alpha & Omega Semiconductor, Ltd.
°C/W
°C/W
AO4916, AO4916L
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
I
=250µA, VGS=0V
D
V
=24V, VGS=0V
DS
V
=0V, VGS= ±20V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
DS
I
=1A,VGS=0V
S
=250µA
=10V, VDS=5V
=10V, ID=8.5A
=4.5V, ID=6A
=5V, ID=8.5A
T
J
=125°C
T
J
=55°C
30 V
0.005 1
µA
5
100 nA
1 1.8 3 V
40 A
14 17
20 25
21 27
mΩ
mΩ
23 S
0.76 1 V
3A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
=0V, VDS=15V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
GS
1040 1250 pF
180 pF
110 pF
0.35 0.7 0.85 Ω
SWITCHING PARAMETERS
(10V)
Q
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
(4.5V)
g
gs
gd
rr
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
=10V, VDS=15V, ID=8.5A
V
GS
V
=10V, VDS=15V, RL=1.8Ω,
GS
=3Ω
R
GEN
IF=8.5A, dI/dt=100A/µs
=8.5A, dI/dt=100A/µs
I
F
19.2 24 nC
9.36 12 nC
2.6 nC
4.2 nC
5.2 7.5 ns
4.4 6.5 ns
17.3 25 ns
3.3 5 ns
16.7 21
ns
9.3 11 nC
SCHOTTKY PARAMETERS
V
F
I
rm
C
T
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Forward Voltage Drop I
Maximum reverse leakage current
Junction Capacitance V
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
θJA
=1.0A
F
V
=30V
R
=30V, TJ=125°C
V
R
=30V, TJ=150°C
V
R
=15V
R
and lead to ambient.
θJL
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
0.45 0.5 V
0.007 0.05
3.2 10
12 20
37 pF
mA
Alpha & Omega Semiconductor, Ltd.
AO4916, AO4916L
S
C
C
GS
V
C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTIC
30
25
4V
10V
4.5V
(A)
D
I
20
15
10
3.5V
VGS=3V
5
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
26
24
V
=4.5V
22
)
20
Ω
(m
18
DS(ON)
16
R
14
VGS=10
12
10
0 5 10 15 20
I
(A)
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
16
VDS=5V
12
(A)
D
I
8
125°C
13.4 16
25°C
4
22 26
0
1.5 2 2.5 3 3.5 4
Figure 2: Transfer Characteristics
1.6
1.4
ID=8.5A
1.2
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Figure 4: On-Resistance vs. Junction
0.76
(Volts)
V
GS
VGS=10V
Temperature (°C)
Temperature
VGS=4.5V
50
)
Ω
(m
DS(ON)
R
40
30
ID=8.5A
20
25°C
10
246810
(Volts)
V
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
125°
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
1.0E-05
125°
25°
0.0 0.2 0.4 0.6 0.8 1.0
V
(Volts)
SD
Figure 6: Body-Diode Characteristics
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