Alpha & Omega Semiconductor AO4914 Service Manual
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Rev 6: May 2005
AO4914
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
General Description
The AO4914 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Features
Q1 Q2
VDS (V) = 30V VDS(V) = 30V
= 8.5A ID = 8.5A
I
D
R
< 18mΩ <18mΩ (VGS = 10V)
DS(ON)
R
< 28mΩ <28mΩ (VGS = 4.5V)
DS(ON)
AO4914 is Pb-free (meets ROHS & Sony 259
specifications). AO4914L is a Green Product ordering
option. AO4914 and AO4914L are electrically identical.
1
8
S2/A
G2
S1
G1
2
3
4
D2/K
7
D2/K
6
D1
5
D1
SOIC-8
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage ±20
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
B
A
T
A
T
A
T
A
=25°C
=70°C
=25°C
=70°C
SCHOTTKY
(V) = 30V, IF = 3A, VF<0.5V@1A
V
DS
Q1
G2
Symbol Max Q2 Unit
V
DS
V
GS
D2
S2
K
A
Max Q1
30
±20
G1
8.5T
I
D
I
DM
P
D
TJ, T
STG
6.6
30 30
2
1.28 1.28
-55 to 150 -55 to 150Junction and Storage Temperature Range
D1
S1
30
8.5
2
Q2
V
V
A6.6
W
°C
Parameter
Reverse Voltage
=25°C
Continuous Forward
Current
A
Pulsed Diode Forward Current
T
A
T
A
=70°C
B
TA=25°C
Power Dissipation
A
=70°C
T
A
Junction and Storage Temperature Range
Symbol
V
DS
I
F
I
FM
P
D
TJ, T
STG
Maximum Schottky
30 V
3
2.2
20
2
1.28
-55 to 150 °C
Units
A
W
Alpha & Omega Semiconductor, Ltd.
AO4912, AO4912L
A
A
A
A
A
A
A
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
Parameter: Thermal Characteristics MOSFET Q2 Typ Max
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
Symbol Units
R
θJA
R
θJL
Symbol Units
R
θJA
R
θJL
Typ
48
74
35
48
74 110
35 40
Max
62.5
110
40
62.5
Thermal Characteristics Schottky
t ≤ 10s
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
C
Steady-State
Steady-State
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
R
θJA
R
θJL
and lead to ambient.
θJL
47.5
71
32
62.5Maximum Junction-to-Ambient
110
40
°C/W
°C/W
°C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4914, AO4914L
Ω
Q1 Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
g
FS
V
SD
I
S
DSS
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode + Schottky Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
=250µA, VGS=0V
I
D
=30V
V
R
=30V, TJ=125°C
V
R
=30V, TJ=150°C
V
R
=0V, VGS= ±20V
V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
DS
I
=1A,VGS=0V
S
=250µA
=10V, VDS=5V
=10V, ID=8.5A
=4.5V, ID=6A
=5V, ID=8.5A
=125°C
T
J
30 V
0.007 0.05
3.2 10
mA
12 20
100 nA
1 1.8 3 V
30 A
15.5 18
22.3 27
23 28
mΩ
m
23 S
0.45 0.5 V
3.5 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance (FET + Schottky)
Reverse Transfer Capacitance
Gate resistance
=0V, VDS=15V, f=1MHz
V
GS
V
=0V, VDS=0V, f=1MHz
GS
971 1165 pF
190 pF
110 pF
0.7 0.85 Ω
SWITCHING PARAMETERS
Q
(10V)
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and
recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
Total Gate Charge
(4.5V)
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode + Schottky Reverse Recovery Time
Body Diode + Schottky Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any a given
θJA
is the sum of the thermal impedence from junction to lead R
θJA
=10V, VDS=15V, ID=8.5A
V
GS
V
=10V, VDS=15V, RL=1.8Ω,
GS
R
=3Ω
GEN
I
=8.5A, dI/dt=100A/µs
F
I
=8.5A, dI/dt=100A/µs
F
and lead to ambient.
θJL
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single
19.2 23 nC
9.36 11.2 nC
2.6 nC
4.2 nC
5.2 7.5 ns
4.4 6.5 ns
17.3 26 ns
3.3 5 ns
18.8 23
ns
9.2 11 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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