Alpha & Omega Semiconductor AO4900A Service Manual
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AO4900A
Dual N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4900A uses advanced trench technology to
provide excellent R
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4900A is Pb-
free (meets ROHS & Sony 259 specifications).
AO4900AL is a Green Product ordering option.
and low gate charge. The
DS(ON)
Features
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
R
R
R
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
< 27mΩ (VGS = 10V)
DS(ON)
< 32mΩ (VGS = 4.5V)
DS(ON)
< 50mΩ (VGS = 2.5V)
DS(ON)
AO4900A and AO4900AL are electrically identical.
S2/A
G2
S1
G1
8
1
7
2
6
3
5
4
SOIC-8
D2/K
D2/K
D1
D1
G2
D2
S2
K
A
G1
D1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25°C
Continuous Drain Current
Pulsed Drain Current
A
B
TA=70°C
Schottky reverse voltage 30
TA=25°C
Continuous Forward Current
Pulsed Forward Current
A
B
T
A
=70°C
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Symbol Unit
V
DS
V
GS
I
D
I
DM
V
KA
I
F
I
FM
P
D
TJ, T
STG
MOSFET
30
±12
6.9
5.8
40
2
-55 to 150
Schottky
3
2
40
2
1.441.44Power Dissipation
-55 to 150
V
V
A
V
A
W
°C
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Unit
R
θJA
Typ
55
90
R
θJL
40
Max
62.5
110
48
°C/W
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
R
θJA
47.5
71
R
θJL
32
62.5Maximum Junction-to-Ambient
110
40
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4900A
Electrical Characteristics (T
Symbol Min Typ Max Units
=25°C unless otherwise noted)
J
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage V
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
V
=24V, VGS=0V
DS
V
=0V, VGS= ±12V
DS
DS=VGS ID
V
GS
V
GS
V
GS
V
GS
V
DS
=1A,VGS=0V
I
S
=250µA
=4.5V, VDS=5V
=10V, ID=6.9A
=4.5V, ID=6A
=2.5V, ID=5A
=5V, ID=5A
T
J
=125°C
T
J
=55°C
30 V
0.002 1
µA
5
100 nA
0.7 1 1.5 V
40 A
20 27
25 40
23 32
34 50
mΩ
mΩ
mΩ
10 26 S
0.71 1 V
4.5 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance V
VGS=0V, VDS=15V, f=1MHz
=0V, VDS=0V, f=1MHz
GS
900 1100 pF
88 pF
65 pF
0.95 1.5 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
rr
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
V
=4.5V, VDS=15V, ID=8.5A
GS
=10V, VDS=15V, RL=1.8Ω,
V
GS
=6Ω
R
GEN
=5A, dI/dt=100A/µs
I
F
I
=5A, dI/dt=100A/µs
F
10 12 nC
1.8 nC
3.75 nC
3.2 ns
3.5 ns
21.5 ns
2.7 ns
16.8 20
ns
812nC
SCHOTTKY PARAMETERS
V
F
I
rm
C
T
Forward Voltage Drop I
Maximum reverse leakage current
Junction Capacitance V
=1.0A
F
V
=30V
R
=30V, TJ=125°C
V
R
=30V, TJ=150°C
V
R
=15V
R
0.45 0.5 V
0.007 0.05
3.2 10
12 20
37 pF
mA
A: The value of R
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev 0 : Feb 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
and lead to ambient.
θJL
Alpha & Omega Semiconductor, Ltd.
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