Alpha & Omega Semiconductor AO4824 Service Manual

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AO4824 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

General Description

Features Q1 Q2

The AO4824 uses advanced trench technology to provide excellent R

and low gate charge. The

DS(ON)

two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-

DC converters. Standard Product AO4824 is Pb-free

(meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical.

SOIC-8

1

8

S2 G2 S1 G1

2 3 4

D2

7

D2

6

D1

5

D1

Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter

Drain-Source Voltage

Gate-Source Voltage ±12 Continuous Drain

Current

A

Pulsed Drain Current

Power Dissipation

TA=25°C TA=70°C

B

=25°C

T

A

T

=70°C

A

VDS (V) = 30V VDS(V) = 30V ID = 8.5A ID=9.8A (VGS = 10V) R R

G1

Symbol Max Q

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

< 17mΩ <13mΩ (VGS = 10V)

DS(ON)

< 27mΩ <15mΩ (VGS = 4.5V)

DS(ON)

D1

G2

S1

D2

S2

Max Q1

30

±20

8.5

6.8

9.8

7.8

30 40

2

1.28 1.28

STG

-55 to 150 -55 to 150Junction and Storage Temperature Range

Unit

V

A

W

°C

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

t ≤ 10s Steady-State

Steady-State

Parameter: Thermal Characteristics MOSFET Q2

Maximum Junction-to-Ambient Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

A

t ≤ 10s

Steady-State

Symbol Unit

R

θJA

R

θJL

Symbol Units

R

θJA

R

θJL

Typ MaxParameter: Thermal Characteristics MOSFET Q1

48

62.5

74 110 35 40

Typ Max

48 62.5 74

35

110

40

°C/W

Alpha & Omega Semiconductor, Ltd.

AO4824

Q1 Electrical Characteristics (T

=25°C unless otherwise noted)

J

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage V

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I

=250µA, VGS=0V

D

V

=24V, VGS=0V

DS

=0V, VGS= ±20V

V

DS

DS=VGS ID

=10V, VDS=5V

V

GS

=10V, ID=8.5A

V

GS

V

=4.5V, ID=6A

GS

V

=5V, ID=8.5A

DS

=1A,VGS=0V

I

S

=250µA

=55°C

T

J

=125°C

T

J

30 V

0.003 1

5

µA

100 nA

1 1.8 3 V

30 A

13.8 17

20 25

21 27

mΩ

m

23 S

0.76 1 V

3A

Ω

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate resistance V

SWITCHING PARAMETERS

(10V)

Q

g

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

gs

gd

rr

(4.5V)

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

V

=0V, VDS=15V, f=1MHz

GS

=0V, VDS=0V, f=1MHz

GS

V

=10V, VDS=15V, ID=8.5A

GS

=10V, VDS=15V, RL=1.8Ω,

V

GS

=3Ω

R

GEN

=8.5A, dI/dt=100A/µs

I

F

=8.5A, dI/dt=100A/µs

I

F

1040 1250 pF

180 pF

110 pF

0.7 0.85 Ω

19.2 23 nC

9.36 11.2 nC

2.6 nC

4.2 nC

5.2 7.5 ns

4.4 6.5 ns

17.3 25 ns

3.3 5 ns

16.7 21

ns

6.7 10 nC

A: The value of R in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev 4 : Aug 2005

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

θJA

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.

AO4824

Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

25

4V

10V

4.5V

20

15

(A)

D

I

10

3.5V

VGS=3V

5

0

012345

V

(Volts)

DS

Fig 1: On-Region Characteristics

26

24

VGS=4.5V

22

)

20

Ω

(m

18

DS(ON)

16

R

VGS=10V

14

12

10

0 5 10 15 20

ID (A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

20

16

VDS=5V

12

(A)

D

I

8

125°C

13.4 16

25°C

4

22 26

0

1.5 2 2.5 3 3.5 4

Figure 2: Transfer Characteristics

1.6

ID=8.5A

1.4

1.2

1

Normalized On-Resistance

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

0.76

V

(Volts)

GS

VGS=10V

Temperature

VGS=4.5V

50

)

Ω

(m

DS(ON)

R

40

30

ID=8.5A

20

25°C

10

246810

(Volts)

V

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

125°C

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0

V

(Volts)

SD

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor AO4824 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual