ALPHA & OMEGA SEMICONDUCTOR AO4822A Datasheet
30V Dual N-channel MOSFET
V
Symbol
Absolute Maximum Ratings T
=25°C unless otherwise noted
G1
S1
G2
D1
D1
D2
V
GS
A
V
±20
Gate-Source Voltage
A D
G1
S1
G2
D1
D1
D2
General Description Product Summary
AO4822A
The AO4822A uses advanced trench technology to
provide excellent R
and low gate charge. This
DS(ON)
device is suitable for use as a load switch or in PWM
applications.
DS
ID (at VGS=10V) 8A
R
R
(at VGS=10V) <19mΩ
DS(ON)
(at VGS = 4.5V) < 26mΩ
DS(ON)
30V
ESD Protected
100% UIS Tested
100% Rg Tested
SOIC-8
SOIC-8
Top View Bottom View
Top View Bottom View
Pin1
Pin1
A
S2
S2
Top View
Top View
138
138
2
2
4 5
4 5
D
D2
D2
7
7
6
6
G
G
G
G
S
S
D
D
S
S
D
Maximum UnitsParameter
Drain-Source Voltage 30
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
TA=25°C
TA=70°C
C
C
C
TA=25°C
B
Power Dissipation
TA=70°C
Junction and Storage Temperature Range -55 to 150 °C
V
DS
I
D
I
DM
IAS, I
EAS, E
P
D
TJ, T
AR
STG
8
6.5
48
AR
18
mJ
2
1.3
V
A
A19
W
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
48
74
32
62.5
90
40
UnitsParameter Typ Max
°C/W
°C/W
°C/W
www.aosmd.com Page 1 of 6
tr3.5
ns
Turn-On Rise Time
Electrical Characteristics (TJ=25°C unless otherwise noted)
AO4822A
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Drain-Source Breakdown Voltage
DSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=250µA, VGS=0V
30 V
VDS=30V, VGS=0V 1
TJ=55°C 5
VDS=0V, VGS= ±20V
VDS=V
VGS=10V, VDS=5V
VGS=10V, ID=8A
GS ID
=250µA
1.2 1.8 2.4 V
48 A
15.5 19
TJ=125°C 21 25
VGS=4.5V, ID=6A
VDS=5V, ID=8A
IS=1A,VGS=0V
18.5 26 mΩ
30 S
0.75 1 V
2.5 A
µA
10 µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
600 740 888 pF
77 110 145 pF
50 82 115 pF
0.5 1.1 1.7 Ω
SWITCHING PARAMETERS
Qg(10V) 12 15 18 nC
Qg(4.5V) 6 7.5 9 nC
Q
gs
Q
gd
t
D(on)
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
VGS=10V, VDS=15V, ID=8A
2 2.5 3 nC
2 3 5 nC
5 ns
VGS=10V, VDS=15V, RL=1.8Ω,
R
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
θJA
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
is the sum of the thermal impedence from junction to lead R
θJA
GEN
=3Ω
19 ns
3.5 ns
IF=8A, dI/dt=500A/µs
IF=8A, dI/dt=500A/µs
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and lead to ambient.
θJL
=150°C. The SOA curve provides a single pulse rating.
J(MAX)
14
6
8 10 ns
18 22
nC
Rev 4: November 2010 www.aosmd.com Page 2 of 6
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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