Alpha & Omega Semiconductor AO4805 Service Manual
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AO4805
Dual P-Channel Enhancement Mode Field Effect Transistor
June 2002
General Description
The AO4805 uses advanced trench technology to
provide excellent R
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
Absolute Maximum Ratings T
Drain-Source Voltage -30
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
Junction and Storage Temperature Range
, and ultra-low low gate
DS(ON)
8
S2
G2
S1
G1
T
T
B
2
3
4
SOIC-8
=25°C
A
=70°C
A
D21
7
D2
6
D1
5
D1
=25°C unless otherwise noted
A
TA=25°C
=70°C
T
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
Features
VDS (V) = -30V
I
= -8A
D
R
R
< 18mΩ (VGS = -20V)
DS(ON)
< 19mΩ (VGS = -10V)
DS(ON)
G1
Maximum UnitsParameter
±25Gate-Source Voltage
-6.9
-40
1.44
-55 to 150
-8
2
D1
S1
D2
G2
S2
V
V
A
W
°C
Thermal Characteristics
Parameter Units
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
50 62.5
73 110
31 40
Max
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO4805
Ω
Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
I
=-250µA, VGS=0V
D
VDS=-24V, VGS=0V
VDS=0V, VGS=±25V
Gate Threshold Voltage VDS=V
On state drain current
VGS=-10V, VDS=-5V
VGS=-10V, ID=-8A
Static Drain-Source On-Resistance
VGS=-20V, ID=-8A
VGS=-4.5V, ID=-5A
Forward Transconductance
Diode Forward Voltage
VDS=-5V, ID=-8A
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
GS ID
=-250µA
TJ=55°C
TJ=125°C
-30 V
-1
-5
µA
±100 nA
-1.7 -2.5 -3 V
40 A
16 19
20.5 25
15 18
33
mΩ
m
m
16 21 S
-0.75 -1 V
-2.6 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=-15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
2076 pF
503 pF
302 pF
2 Ω
SWITCHING PARAMETERS
Q
Q
Q
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
g
gs
gd
Total Gate Charge
Gate Source Charge
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-8A
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.8Ω,
R
=3Ω
GEN
Turn-Off Fall Time
Body Diode Reverse Recovery Time
rr
Body Diode Reverse Recovery Charge
IF=-8A, dI/dt=100A/µs
IF=-8A, dI/dt=100A/µs
39 nC
8nC
11.4 nC
12.7 ns
7ns
25.2 ns
12 ns
32
ns
26 nC
A: The value of R
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T
θJA
is the sum of the thermal impedence from junction to lead R
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
and lead to ambient.
θJL
=25°C. The
A
Alpha & Omega Semiconductor, Ltd.
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