ALPHA & OMEGA SEMICONDUCTOR AO4805 Datasheet
30V Dual P-Channel MOSFET
V
Symbol
Absolute Maximum Ratings T
=25°C unless otherwise noted
A D
A
2
4
5
138
6
7
Pin1
General Description Product Summary
AO4805
The AO4805 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
. This device is ideal for load switch
DS(ON)
and battery protection applications.
DS
ID (at VGS=-20V) -9A
R
R
(at VGS=-20V) < 15mΩ
DS(ON)
(at VGS =-10V) < 18mΩ
DS(ON)
-30V
100% UIS Tested
100% Rg Tested
SOIC-8
Top View Bottom View
A
S2
G2
S1
G1
Top View
D2
D2
D1
D1
G1
D1
G2
S1
Maximum UnitsParameter
Drain-Source Voltage -30
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
TA=25°C
TA=70°C
C
C
C
TA=25°C
B
Power Dissipation
TA=70°C
Junction and Storage Temperature Range -55 to 150 °C
V
DS
V
GS
I
D
I
DM
IAS, I
EAS, E
P
D
TJ, T
AR
STG
-9
-7
-50
AR
54Avalanche energy L=0.1mH
mJ
2
1.3
D2
S2
V
V±25Gate-Source Voltage
A
A33
W
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Rev 7: December 2010 www.aosmd.com Page 1 of 5
t ≤ 10s
Steady-State
Steady-State
Symbol
R
θJA
R
θJL
48
74
32
90
40
UnitsParameter Typ Max
°C/W62.5
°C/W
°C/W
Electrical Characteristics (TJ=25°C unless otherwise noted)
AO4805
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
g
FS
V
SD
I
S
DSS
DS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
ID=-250µA, VGS=0V
-30 V
VDS=-30V, VGS=0V -1
TJ=55°C -5
VDS=0V, VGS=±25V
VDS=V
GS ID
=-250µA
VGS=-10V, VDS=-5V
VGS=-20V, ID=-9A
VGS=-10V, ID=-8A
-1.7 -2.3 -2.8 V
-50 A
±100 nA
10 15 mΩ
12 18
TJ=125°C 13 20
VGS=-4.5V, ID=-5A
VDS=-5V, ID=-9A
IS=-1A,VGS=0V
29 mΩ
27 S
-0.7 -1 V
-2.5 A
µA
mΩ
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
2060 2600 pF
370 pF
295 pF
1.2 2.4 3.6 Ω
SWITCHING PARAMETERS
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A. The value of R
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on T
C. Repetitive rating, pulse width limited by junction temperature T
initialTJ=25°C.
D. The R
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
Total Gate Charge
Gate Source Charge
VGS=-10V, VDS=-15V, ID=-9A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-15V, RL=1.67Ω,
R
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
θJA
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
J(MAX)
is the sum of the thermal impedence from junction to lead R
θJA
IF=-9A, dI/dt=100A/µs
IF=-9A, dI/dt=100A/µs
J(MAX)
=3Ω
GEN
=150°C. Ratings are based on low frequency and duty cycles to keep
J(MAX)
and lead to ambient.
θJL
=150°C. The SOA curve provides a single pulse ratin g.
30 39 nC
4.6 nC
10 nC
11 ns
9.4 ns
24 ns
12 ns
30 40 ns
22
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 7: December 2010 www.aosmd.com Page 2 of 5
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