ALPHA & OMEGA SEMICONDUCTOR AO4620 Datasheet
Symbol
Max p-channel
Units
Symbol
Device
Typ
Max
Units
B
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
A
A
A
B
B
AO4620
G1
D1
S1
p-channel
S2
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4620 uses advanced trench technology
MOSFETs to provide excellent R
charge. The complementary MOSFETs may be used
in inverter and other applications.
SOIC-8
Top View Bottom View
Pin1
DS(ON)
and low gate
Features
n-channel p-channel
VDS(V) = 30V -30V
ID= 7.2A (VGS=10V) -5.3A (VGS= -10V)
R
DS(ON) RDS(ON)
< 24mΩ (VGS=10V) < 32mΩ (VGS= -10V)
< 36mΩ (VGS=4.5V) < 55mΩ (VGS= -4.5V)
100% UIS tested
100% Rg tested
S2
G2
S1
G1
Top View
1
2
3
4 5
D2
8
D2
7
D1
6
D1
G2
n-channel
D2
A
Parameter Max n-channel
Drain-Source Voltage
Continuous Drain
Current
F
TA=25°C
TA=70°C
Pulsed Drain Current
TA=25°C
F
TA=70°CPower Dissipation
Avalanche Current
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range -55 to 150-55 to 150
V
DS
V
GS
I
D
I
DM
P
D
I
AR
E
AR
TJ, T
STG
30 -30
±20Gate-Source Voltage
7.2
6.2
64
2
1.44 1.44
9 17
12 43
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
R
θJA
R
θJL
R
θJA
R
θJL
n-ch 50 62.5 °C/W
n-ch 80 100 °C/W
n-ch 32 40 °C/W
p-ch 50 62.5 °C/W
p-ch 80 100 °C/W
p-ch 32 40 °C/W
±20
-5.3
-4.5
-40
2
V
V
A
W
A
mJ
°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4620
B
N-CHANNEL Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Min Typ Max Units
Parameter Conditions
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
I
SM
DSS
Drain-Source Breakdown Voltage ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=30V, VGS=0V
VDS=0V, VGS= ±20V
VDS=V
GS ID
=250µA
VGS=10V, VDS=5V
VGS=10V, ID=7.2A
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
Forward Transconductance
Diode Forward Voltage
VDS=5V, ID=7.2A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
Pulsed Body-Diode Current
TJ=55°C 5
TJ=125°C 25 32
30 V
1
µA
100 nA
1.5 2.1 2.6 V
64 A
17.7 24
mΩ
24.8 36 mΩ
20 S
0.74 1 V
2.5 A
64 A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
VGS=0V, VDS=15V, f=1MHz
Reverse Transfer Capacitance
Gate resistance VGS=0V, VDS=0V, f=1MHz
373 448 pF
67 pF
41 pF
1.8 2.8 Ω
SWITCHING PARAMETERS
Qg(10V) 7.2 11 nC
Qg(4.5V) 3.5 nC
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.
Rev 8: May 2012
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
θJA
is the sum of the thermal impedence from junction to lead R
θJA
VGS=10V, VDS=15V, ID=7.2A
VGS=10V, VDS=15V, RL=2.1Ω,
R
=3Ω
GEN
IF=7.2A, dI/dt=100A/µs
IF=7.2A, dI/dt=100A/µs
and lead to ambient.
θJL
1.3 nC
1.7 nC
4.5 ns
2.7 ns
14.9 ns
2.9 ns
10.5 12.6
ns
4.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4620
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
25°C
125
60
10V
5V
6V
50
40
30
(A)
D
I
20
6V
VGS=3.5V
10
0
0 1 2 3 4 5
VDS(Volts)
Fig 1: On-Region Characteristics
45
40
VGS=4.5V
35
Ω
Ω)
Ω
Ω
30
(m
25
DS(ON)
R
20
VGS=4.5V
VGS=10V
VGS=10V
15
4.5V
15
VDS=5V
12
VDS=5V
9
(A)
D
I
6
125°C
125°C
3
25°C
25°
0
1.5 2 2.5 3 3.5 4 4.5
VGS(Volts)
Figure 2: Transfer Characteristics
1.8
1.6
VGS=10V
Id=7.7A
1.4
1.2
1
0.8
Normalized On-Resistance
VGS=4.5V
Id=5A
10
0 5 10 15 20
ID(A)
Figure 3: On-Resistance vs. Drain Current and
0.6
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage
60
ID=7.7A
ID=7.2A
50
40
Ω
Ω)
Ω
Ω
(m
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
DS(ON)
R
20
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
125°C
°
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
1.0E-04
125°C
25°C
10
2 4 6 8 10
VGS(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VSD(Volts)
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
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