Alpha & Omega Semiconductor AO4615 Service Manual
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AO4615
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4615 uses advanced trench
technology MOSFETs to provide
excellent R
The complementary MOSFETs may be
used to form a level shifted high side
switch, and for a host of other
applications. It is ESD protected.
Standard product AO4615 is Pb-free
(meets ROHS & Sony 259
specifications). AO4615L is a Green
Product ordering option. AO4615 and
and low gate charge.
DS(ON)
Features
n-channel p-channel
V
(V) = 30V -30V
DS
= 7.2A (VGS=10V) -5.7A (VGS=10V)
I
D
R
DS(ON) RDS(ON)
< 24mΩ (VGS=10V) < 39m Ω (VGS = -10V)
< 40mΩ (V
ESD rating: 1500V (HBM)
P-channel MOSFET has an additional R
open circuit protection.
=4.5V) < 62m Ω (VGS = -4.5V)
GS
AO4615L are electrically identical
1
8
S2
2
G2
3
S1
4
G1
SOIC-8
Absolute Maximum Ratings T
Parameter Max n-channel
Drain-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy 0.1mH
Junction and Storage Temperature Range
7
6
5
D2
D2
D1
D1
B
B
TA=25°C
TA=70°C
=25°C
T
A
T
=70°CPower Dissipation
A
=25°C unless otherwise noted
A
Symbol Max p-channel Units
V
DS
V
GS
I
D
I
DM
P
D
I
B
AR
E
AR
, T
T
J
STG
G2
n-channel
30 -30
±20Gate-Source Voltage
7.2
6.1
30
2
1.44
15
11
D2
S2
G1
R
OC
-55 to 150-55 to 150
< 1MΩ for
OC
-channel
±20
-5.7
-4.9
-30
2
1.44
20
20
D1
S1
V
V
A
W
A
mJ
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
t ≤ 10s
Steady-State
Steady-State
t ≤ 10s
Steady-State
Steady-State
Symbol Ty
R
θJA
R
θJL
R
θJA
R
θJL
n-ch 55 62.5 °C/W
n-ch 92 110 °C/W
n-ch 37 50 °C/W
p-ch 48 62.5 °C/W
p-ch 87 110 °C/W
p-ch 37 50 °C/W
Max
Units
Alpha & Omega Semiconductor, Ltd.
AO4615
N-Channel Electrical Characteristics (T
Symbol Min Typ Max Units
Parameter Conditions
=25°C unless otherwise noted)
J
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage I
Zero Gate Voltage Drain Current
Gate-Body leakage current V
Gate Threshold Voltage V
On state drain current V
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
=250µA, VGS=0V
D
V
=24V, VGS=0V
DS
=0V, VGS=±20V
DS
DS=VGS ID
=10V, VDS=5V
GS
V
=10V, ID=7.2A
GS
=4.5V, I
V
GS
V
=5V, ID=4A
DS
I
=1A
S
=250µA
=4A
D
T
=55°C
J
T
=125°C
J
30 V
1
5
10
µA
µA
123V
20 A
20 24
29 35
30 40
mΩ
m
Ω
10 18 S
0.77 1 V
3A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
=0V, VDS=15V, f=1MHz
V
GS
=0V, VDS=0V, f=1MHz
V
GS
522 630 pF
110 pF
75 pF
2.1 3 Ω
SWITCHING PARAMETERS
(10V)
Q
g
Q
(4.5V)
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
resistance from junction to drain lead.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
F. Rev 0: July 2005
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
θJA
is the sum of the thermal impedence from junction to lead R
θJA
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
V
=10V, VDS=15V, ID=7.2A
GS
=10V, VDS=15V, RL=2.1Ω,
V
GS
=3Ω
R
GEN
=7.2A, dI/dt=100A/µs
I
F
=7.2A, dI/dt=100A/µs
I
F
and lead to ambient. R
θJL
θJL
11 15 nC
5.3 7 nC
1.9 nC
4nC
4.7 7 ns
4.9 10 ns
16.2 22 ns
3.5 7 ns
15.7 20
7.9 10 nC
and R
are equivalent terms referring to thermal
θJC
ns
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4615
C
V
GS
N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
5V
4.5V
25
20
15
(A)
D
I
4V
3.5V
10
5
VGS=3V
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
40
)
Ω
(m
DS(ON)
R
35
30
25
20
15
=4.5V
VGS=10V
10
0 5 10 15 20
(Amps)
I
D
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
20
16
VDS=5V
12
(A)
D
I
8
125°
4
25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V
(Volts)
GS
Figure 2: Transfer Characteristics
1.6
1.5
1.4
VGS=10V
=7.2A
I
D
1.3
1.2
1.1
VGS=4.5V
I
=4A
D
1
Normalized On-Resistance
0.9
0.8
0 25 50 75 100 125 150 175
Temperature ( °C)
Figure 4: On-Resistance vs. Junction
Temperature
70
1.0E+01
ID=7.2A
60
50
)
Ω
(m
DS(ON)
R
40
30
20
25°C
125°C
10
246810
V
(Volts)
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E+00
1.0E-01
1.0E-02
Amps
S
I
1.0E-03
1.0E-04
1.0E-05
125°C
25°C
0.0 0.2 0.4 0.6 0.8 1.0
V
(Volts)
SD
Figure 6: Body diode characteristics
Alpha & Omega Semiconductor, Ltd.
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