Alpha & Omega Semiconductor AO4614 Service Manual
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A
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AO4614
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4614 uses advanced trench
technology MOSFETs to provide excellen
R
complementary MOSFETs may be used
in H-bridge, Inverters and other
applications. Standard Product AO4614
is Pb-free (meets ROHS & Sony 259
and low gate charge. The
DS(ON)
Features
n-channel p-channel
(V) = 40V -40V
V
DS
I
= 6A (VGS=10V) -5A (VGS = -10V)
D
R
DS(ON) RDS(ON)
< 31mΩ (VGS=10V) < 45mΩ (VGS = -10V)
< 45mΩ (V
=4.5V) < 63mΩ (VGS = -4.5V)
GS
specifications). AO4614L is a Green
Product ordering option. AO4614 and
O4614L are electrically identical.
D2
8
1
S2
2
G2
3
S1
4
G1
SOIC-8
Absolute Maximum Ratings T
Parameter Max n-channel
Drain-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Junction and Storage Temperature Range
7
6
5
D2
D2
D1
D1
TA=25°C
TA=70°C
B
T
=25°C
A
=70°CPower Dissipation
T
A
G2
n-channel
=25°C unless otherwise noted
A
Symbol Max p-channel Units
V
DS
V
GS
I
D
I
DM
P
D
TJ, T
STG
S2
p-channel
40 -40
±20Gate-Source Voltage
6
5
20
2
1.28
G1
D1
S1
-55 to 150-55 to 150
±20
-5
-4
-20
2
1.28
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
A
A
t ≤ 10s
Steady-State
Steady-State
A
A
t ≤ 10s
Steady-State
Steady-State
Symbol Device Typ Max Units
R
θJA
R
θJL
R
θJA
R
θJL
n-ch 48 62.5 °C/W
n-ch 74 110 °C/W
n-ch 35 50 °C/W
p-ch 48 62.5 °C/W
p-ch 74 110 °C/W
p-ch 35 50 °C/W
Alpha & Omega Semiconductor, Ltd.
AO4614
Ω
N Channel Electrical Characteristics (T
Symbol Min Typ Max Units
Parameter Conditions
=25°C unless otherwise noted)
J
STATIC PARAMETERS
BV
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
DSS
Drain-Source Breakdown Voltage ID=10mA, VGS=0V
=32V, VGS=0V
V
Zero Gate Voltage Drain Current
Gate-Body leakage current V
Gate Threshold Voltage V
On state drain current V
DS
=0V, VGS= ±20V
DS
DS=VGS ID
=10V, VDS=5V
GS
V
=10V, ID=6A
GS
=250µA
Static Drain-Source On-Resistance
=4.5V, ID=5A
V
GS
V
Forward Transconductance
Diode Forward Voltage
=5V, ID=6A
DS
I
=1A,VGS=0V
S
Maximum Body-Diode Continuous Current
T
=55°C
J
T
=125°C
J
40 V
1
5
µA
±100 nA
1 2.3 3 V
20 A
23.2 31
36 48
32.6 45
mΩ
m
22 S
0.77 1 V
3A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
=0V, VDS=20V, f=1MHz
GS
=0V, VDS=0V, f=1MHz
V
GS
404 pF
95 pF
37 pF
2.7 Ω
SWITCHING PARAMETERS
(10V)
Q
g
Q
(4.5V)
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
Rev 3 : Sept 2005
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
θJA
is the sum of the thermal impedence from junction to lead R
θJA
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
V
=10V, VDS=20V, ID=6A
GS
=10V, VDS=20V, RL=3.3Ω,
V
GS
=3Ω
R
GEN
=6A, dI/dt=100A/µs
I
F
=6A, dI/dt=100A/µs
I
F
and lead to ambient.
θJL
8.3 nC
4.2 nC
1.3 nC
2.3 nC
4.2 ns
3.3 ns
15.6 ns
3ns
20.5
ns
14.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4614
C
C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30
10V 5V
25
4.5V
20
4V
15
(A)
D
I
10
VGS=3.5V
5
0
012345
V
(Volts)
DS
Fig 1: On-Region Characteristics
50
)
40
Ω
(m
DS(ON)
R
30
VGS=4.5V
VGS=10V
20
VDS=5V
15
(A)
D
I
10
5
125°C
25°C
0
2 2.5 3 3.5 4 4.5
V
(Volts)
GS
Figure 2: Transfer Characteristics
1.8
VGS=10V
=6A
I
1.6
1.4
D
VGS=4.5V
I
1.2
D
=5A
20
0 5 10 15 20
(A)
I
D
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
80
ID=6A
125°C
25°C
)
Ω
(m
DS(ON)
R
70
60
50
40
30
20
10
246810
(Volts)
V
GS
Figure 5: On-Resistance vs. Gate-Source Voltage
1
Normalized On-Resistance
0.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+01
1.0E+00
1.0E-01
(A)
1.0E-02
S
I
1.0E-03
125°
25°
1.0E-04
1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
(Volts)
V
SD
Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
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