Alpha & Omega Semiconductor AO4610 Service Manual

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AO4610
Complementary Enhancement Mode Field Effect Transistor

General Description

The AO4610 uses advanced trench
technology MOSFETs to provide excellent
R

complementary MOSFETs may be used in
inverter and other applications. A Schottky
diode is co-packaged with the n-channel FET

to minimize body diode losses. Standard

Product AO4610 is Pb-free (meets ROHS &

and low gate charge. The

DS(ON)

Features

n-channel p-channel

(V) = 30V -30V

V

DS

= 8.5A(VGS=10V) -7.1A(VGS = -10V)

I

D

R

DS(ON) RDS(ON)

< 18mΩ (VGS=10V) < 25mΩ (VGS = -10V)
< 28mΩ (V

<0.5V@1A

V

F

=4.5V) < 40mΩ (VGS = -4.5V)

GS

Sony 259 specifications). AO4610L is a
Green Product ordering option. AO4610
and AO4610L are electrically identical.

D2

1
2
3
4

SOIC-8

8
7
6
5

D2/K
D2/K
D1
D1

TA=25°C

TA=70°C

B

=25°C

T

A

T

=70°CPower Dissipation

A

G2

S2

n-channel

=25°C unless otherwise noted

A

Symbol Max p-channel Units

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

STG

K

A

G1

30 -30

±20Gate-Source Voltage

8.5

6.6

30

2

1.28

S2/A

G2
S1
G1

Absolute Maximum Ratings T
Parameter Max n-channel

Drain-Source Voltage

Continuous Drain

Current

A

Pulsed Drain Current

Junction and Storage Temperature Range

D1

S1

-channe

V

±20

V

-7.1

-5.6

A

-30

2

1.28

-55 to 150-55 to 150

W

°C

Parameter Maximum Schottky Units

Reverse Voltage 30 V
Continuous Forward

Current

A

Pulsed Forward Current

TA=25°C

T

=70°C 2

A
B

TA=25°C

Power Dissipation

A

=70°C 1.28

T

A

Junction and Storage Temperature Range -55 to 150 °C

Symbol

V

DS

I

D

I

DM

P

D

TJ, T

STG

3

20

2

A

W

Alpha & Omega Semiconductor, Ltd.

AO4610

x

Thermal Characteristics: n-channel, Schottky and p-channel
Parameter

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

C

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

C

Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead

C

A

A

A

A

A

A

t ≤ 10s
Steady-State
Steady-State

t ≤ 10s
Steady-State
Steady-State

t ≤ 10s
Steady-State
Steady-State

Symbol Device Typ Ma

R

θJA

R

R

θJA

R

R

θJA

R

n-ch 48 62.5 °C/W
n-ch 74 110 °C/W

θJL

n-ch 35 60 °C/W

p-ch 48 62.5 °C/W
p-ch 74 110 °C/W

θJL

p-ch 35 40 °C/W

Schottky 47.5 62.5 °C/W
Schottky 71 110 °C/W
Schottky 32 40 °C/W

θJL

Units

Alpha Omega Semiconductor, Ltd.

AO4610

Ω

N-Channel + Schottky Electrical Characteristics (T

Symbol Min Typ Max Units

Parameter Conditions

=25°C unless otherwise noted)

J

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage I

DSS

Zero Gate Voltage Drain Current

Gate-Body leakage current V

Gate Threshold Voltage V

On state drain current V

Static Drain-Source On-Resistance

Forward Transconductance

Body-Diode+Schottky Forward Voltage

Maximum Body-Diode+Schottky Continuous Current

=250µA, VGS=0V

D

=24V, VGS=0V

V

DS

=0V, VGS=±20V

DS

DS=VGS ID

GS

V

GS

V

GS

V

DS

=1A

I

S

=250µA

=4.5V, VDS=5V

=10V, ID=8.5A

=4.5V, ID=6.6A

=5V, ID=8.5A

T

J

=125°C

T

J

=55°C

30 V

25

µA

100 nA

1 1.8 3 V

40 A

15.5 18

22.3 27

23 28

mΩ

m

10 23 S

0.75 1 V

5.5 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance (FET+Schottky)

Reverse Transfer Capacitance

Gate resistance

=0V, VDS=15V, f=1MHz

V

GS

V

=0V, VDS=0V, f=1MHz

GS

1040 pF

180 pF

110 pF

0.7 Ω

SWITCHING PARAMETERS

(10V)

Q

Q

Q

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

(4.5V)

g

gs

gd

rr

Total Gate Charge

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body-Diode+Schottky Reverse Recovery Time

Body-Diode+Schottky Reverse Recovery Charge

=10V, VDS=15V, ID=8.5A

V

GS

V

=10V, VDS=15V, RL=1.8Ω,

GS

R

=3Ω

GEN

=8.5A, dI/dt=100A/µs

I

F

I

=8.5A, dI/dt=100A/µs

F

19.2 nC

9.36 nC

2.6 nC

4.2 nC

5.2 ns

4.4 ns

17.3 ns

3.3 ns

16.7

ns

6.7 nC

SCHOTTKY PARAMETERS

V

F

I

rm

C

T

A: The value of R
given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R

D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in
a single pulse rating.
Rev 4: July 2005

Forward Voltage Drop I

Maximum reverse leakage current

Junction Capacitance V

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any

θJA

is the sum of the thermal impedence from junction to lead R

θJA

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides

=1.0A

F

V

=30V

R

=30V, TJ=125°C

V

R

=30V, TJ=150°C

V

R

=15V

R

and lead to ambient.

θJL

0.45 0.5 V

0.007 0.05

3.2 10

12 20
37 pF

mA

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd.