Alpha & Omega Semiconductor AO4609 Service Manual

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p

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AO4609 Complementary Enhancement Mode Field Effect Transistor

July 2003

General Description

Features

n-channel p-channel The AO4609 uses advanced trench technology MOSFETs to provide excellent R

and low gate charge.

DS(ON)

The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.

1

8

S2 G2 S1 G1

2 3 4

D2

7

D2

6

D1

5

D1

SOIC-8

Absolute Maximum Ratings T

=25°C unless otherwise noted

A

Parameter Max n-channel

Drain-Source Voltage 30

Gate-Source Voltage ±20 ±12

Continuous Drain

Current

A

Pulsed Drain Current

Power Dissipation

TA=25°C

T

=70°C 6.6 -2.4

A

B

=25°C

T

A

T

=70°C 1.28 1.28

A

Junction and Storage Temperature Range -55 to 150 -55 to 150

(V) = 30V -30V

V

DS

I

= 8.5A -3A

D

R

DS(ON) RDS(ON)

< 18mΩ (VGS=10V) < 130mΩ (VGS = 10V)

< 28mΩ (V

< 260mΩ (V

=4.5V) < 180mΩ (VGS = 4.5V)

GS

D2

G2

S2

n-channel

G1

-channel

GS

D1

S1

= 2.5V)

Symbol Max p-channel Units

V

DS

V

GS

I

D

I

DM

P

D

TJ, T

8.5

40 -6

22

STG

-30

-3

V

A

W

°C

Thermal Characteristics: n-channel and p-channel Parameter

Maximum Junction-to-Ambient Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

Maximum Junction-to-Ambient Maximum Junction-to-Ambient

Maximum Junction-to-Lead

C

t ≤ 10s Steady-State

Steady-State

t ≤ 10s Steady-State

Steady-State

Symbol Device Typ Max Units

R

θJA

R

θJL

R

θJA

R

θJL

n-ch 48 62.5 °C/W n-ch 74 110 °C/W n-ch 35 40 °C/W

p-ch 56 62.5 °C/W p-ch 81 110 °C/W p-ch 40 48 °C/W

AO4609

Ω

N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

I

=250µA, VGS=0V

D

VDS=24V, VGS=0V

VDS=0V, VGS= ±20V

Gate Threshold Voltage VDS=V

On state drain current

VGS=10V, VDS=5V

VGS=10V, ID=8.5A

Static Drain-Source On-Resistance

VGS=4.5V, ID=6A

Forward Transconductance

Diode Forward Voltage

VDS=5V, ID=8.5A

IS=1A,VGS=0V

Maximum Body-Diode Continuous Current

GS ID

=250µA

TJ=55°C

TJ=125°C

30 V

1

5

µA

100 nA

1 1.8 3 V

30 A

15.5 18

22.3 27

23 28

mΩ

m

23 S

0.75 1 V

3A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

VGS=0V, VDS=15V, f=1MHz

Reverse Transfer Capacitance

Gate resistance VGS=0V, VDS=0V, f=1MHz

1040 pF

180 pF

110 pF

0.7 Ω

SWITCHING PARAMETERS

Qg(10V)

Qg(4.5V)

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

VGS=10V, VDS=15V, ID=8.5A

VGS=10V, VDS=15V, RL=1.8Ω, R

=3Ω

GEN

IF=8.5A, dI/dt=100A/µs

19.2 nC

9.36 nC

2.6 nC

4.2 nC

5.2 ns

4.4 ns

17.3 ns

3.3 ns

16.7

ns

6.7 nC

A: The value of R in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating.

θJA

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA

and lead to ambient.

θJL

Alpha & Omega Semiconductor, Ltd.

AO4609

Ω

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Min Typ Max Units

Parameter Conditions

STATIC PARAMETERS

BV

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

DSS

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body leakage current

I

=-250µA, VGS=0V

D

VDS=-24V, VGS=0V

VDS=0V, VGS=±12V

Gate Threshold Voltage VDS=V

On state drain current

VGS=-4.5V, VDS=-5V

VGS=-10V, ID=-3A

Static Drain-Source On-Resistance

VGS=-4.5V, ID=-2A

VGS=-2.5V, ID=-1A

Forward Transconductance

Diode Forward Voltage

VDS=-5V, ID=-3A

IS=-1A,VGS=0V

Maximum Body-Diode Continuous Current

GS ID

=-250µA

TJ=55°C

TJ=125°C

-30 V

-1

-5

µA

±100 nA

-0.6 -1 -1.4 V

-10 A

102 130

154 200

128 180

187 260

mΩ

m

3 4.5 S

-0.85 -1 V

-2 A

DYNAMIC PARAMETERS

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

VGS=0V, VDS=-15V, f=1MHz

Reverse Transfer Capacitance

Gate resistance VGS=0V, VDS=0V, f=1MHz

409 pF

55 pF

42 pF

12 Ω

SWITCHING PARAMETERS

Q

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

g

gs

gd

Total Gate Charge

Gate Source Charge

Gate Drain Charge

VGS=-4.5V, VDS=-15V, ID=-3A

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=5Ω, R

=3Ω

GEN

Turn-Off Fall Time

Body Diode Reverse Recovery Time

rr

Body Diode Reverse Recovery Charge

IF=-3A, dI/dt=100A/µs

4.4 nC

0.8 nC

1.32 nC

5.3 ns

4.4 ns

31.5 ns

8ns

15.8

ns

8nC

A: The value of R value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in SOA curve provides a single pulse rating.

θJA

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T

θJA

is the sum of the thermal impedence from junction to lead R

2

FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The

and lead to ambient.

θJL

=25°C. The

A

Alpha & Omega Semiconductor, Ltd.

AO4609

N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30

25

4V

10V

4.5V

20

15

(A)

D

I

10

3.5V

VGS=3V

5

0

012345

V

(Volts)

DS

Fig 1: On-Region Characteristics

28

)

Ω

(m

DS(ON)

R

26

24

22

20

18

V

=4.5V

GS

VGS=10V

16

14

0 5 10 15 20

I

(A)

D

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage

2.00E+01

1.60E+01

VDS=5V

1.20E+01

(A)

D

I

8.00E+00

125°C

25°C

4.00E+00

0.00E+00

1.5 2 2.5 3 3.5 4

V

(Volts)

GS

Figure 2: Transfer Characteristics

1.6

VGS=10V

ID=8.5A

1.4

VGS=4.5V

1.2

1

Normalized On-Resistance

0.8

0 25 50 75 100 125 150 175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature

50

)

Ω

(m

DS(ON)

R

40

30

20

25°C

ID=8.5A

10

246810

V

(Volts)

GS

Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

125°C

1.0E+01

1.0E+00

1.0E-01

(A)

1.0E-02

S

I

1.0E-03

1.0E-04

1.0E-05

125°C

25°C

0.0 0.2 0.4 0.6 0.8 1.0

V

(Volts)

SD

Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor AO4609 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual